Investigation of the Electrical Parameters in a Partially Extended Ge-Source Double-Gate Tunnel Field-Effect Transistor (DG-TFET)

A partially extended germanium-source double-gate tunnel field-effect transistor (PEGeDG-TFET) utilizes line and point tunneling phenomena to achieve low ambipolar current and high ON-state current. These advantages are accompanied by an exceptionally low OFF-state current (I_OFF) and subthreshold swing with resilience against short-channel effects. However, PEGeDG-TFETs face challenges in terms of large variations in I_OFF and changes in electrical characteristics with temperature due to the change in the bandgap of semiconductor material. In this article, we explore the temperature-associated variations of a PEGeDG-TFET under the influence of interface trap charges (ITCs) for reliability assessment. Results revealed that the Shockley–Read–Hall phenomenon is dominant at lower gate bias voltage, leading to I_OFF degeneration at high temperature. The band-to-band tunneling (BTBT) phenomenon experiences minor variations at higher temperature and gate voltage. Additionally, at high temperature (500 K), it is discovered that the threshold voltage, cut-off frequency, gain–bandwidth product, transconductance–frequency product, intrinsic gain, and transit time decrease, thus limiting the device reliability in the avionics sector where temperatures fall below 410 K with consistent performance of analog/radio-frequency (RF) parameters. This investigation was conducted via simulations on a Silvaco ATLAS simulator considering ITCs and temperature variations.