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Journal of Materials Science
Erschienen in: Journal of Materials Science 9/2018

16.01.2018 | Ceramics

Investigation on electrical transport properties of nanocrystalline WO3 under high pressure

verfasst von: Yuqiang Li, Yang Gao, Cailong Liu, Yonghao Han, Qinglin Wang, Yan Li, Pingfan Ning, Pingjuan Niu, Yanzhang Ma, Chunxiao Gao

Erschienen in: Journal of Materials Science | Ausgabe 9/2018

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Abstract

The electrical transport properties of nanocrystalline tungsten trioxides (WO3) under high pressures have been investigated by various electrical measurements up to 36.5 GPa. The discontinuous changes in direct-current resistivity under high pressures result from two electronic phase transitions at 4.3 and 10.5 GPa and two structural phase transitions at 24.8 and 31.6 GPa. Hall-effect measurement shows that the nanocrystalline WO3 is n-type semiconductor within the whole investigated pressure range. The carrier concentration decreases monotonously with increasing pressure, but mobility increases first and then decreases at 10.4 GPa. Through alternate-current impedance measurement, it can be found that the variation of the ratio of grain boundary resistance to grain resistance synchronizes with that of the mobility under high pressures, indicating that the grain boundary plays more important role in the carrier transport process of nanocrystalline WO3. The discontinuous changes of resistance and relaxation frequency of grain and grain boundary also provide the evidence for electronic phase transitions.
Vorheriger Artikel Antibiofouling thin-film composite membranes (TFC) by in situ formation of Cu-(m-phenylenediamine) oligomer complex
Nächster Artikel Mechanical and microstructural properties of cordierite-bonded porous SiC ceramics processed by infiltration technique using various pore formers

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Metadaten
Titel
Investigation on electrical transport properties of nanocrystalline WO3 under high pressure
verfasst von
Yuqiang Li
Yang Gao
Cailong Liu
Yonghao Han
Qinglin Wang
Yan Li
Pingfan Ning
Pingjuan Niu
Yanzhang Ma
Chunxiao Gao
Publikationsdatum
16.01.2018
Verlag
Springer US
Erschienen in
Journal of Materials Science / Ausgabe 9/2018
Print ISSN: 0022-2461
Elektronische ISSN: 1573-4803
DOI
https://doi.org/10.1007/s10853-018-2001-5

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