Journal of Materials Science: Materials in Electronics

Erschienen in:

11.10.2016

Investigation on the effect of Ti doping on dielectric, impedance and magnetic properties of Ba²⁺-substituted BiFeO₃ ceramics

verfasst von: Manpreet Kaur, Poonam Uniyal

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 12/2016

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Abstract

Ti⁴⁺ substituted (Bi_0.9Ba_0.1)(Fe_1−yTi_y)O₃ ceramics (0.0 ≤ y ≤ 0.15) were synthesized by auto combustion method. Rietveld refinement reveals a transformation from rhombohedral to tetragonal with the Ti⁴⁺ doping content at y = 0.05. Effect of Ti⁴⁺ doping on the dielectric properties of Ba²⁺ doped BiFeO₃ was studied from room temperature to 400 °C in wide range of frequency. Initially, the dielectric loss was found to increase in ceramics with low Ti⁴⁺ content and then after decreases with further increase in Ti⁴⁺ concentration. The electrical conductivity of Bi_0.9Ba_0.1Fe_1−yTi_yO₃ ceramics obeys the Arrhenius law, revealing the controlled conduction mechanism of oxygen vacancies at the higher range of temperature. The highest d ₃₃ value of 15.8 pC/N was exhibited by the composition with Ti⁴⁺ doping at y = 0.05. Ti⁴⁺ doped BBFO ceramics showed similar behavior of weak ferromagnetism as Bi_0.9Ba_0.1FeO₃. Also, magnetization was found to increase with Ti⁴⁺ doping content up to 0.05 and then decreases with further increase in doping concentration.

Vorheriger Artikel The effect of Eu and Dy dopants on the luminescence properties of Sr4Al14O25:Eu2+, Dy3+ phosphorescent nano-pigments prepared by the solution combustion method

Nächster Artikel Effects of temperature and Ti-nonstoichiometry on electric properties of CaCu3Ti4O12 thin films

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Titel: Investigation on the effect of Ti doping on dielectric, impedance and magnetic properties of Ba2+-substituted BiFeO3 ceramics
verfasst von: Manpreet Kaur
Poonam Uniyal
Publikationsdatum: 11.10.2016
Verlag: Springer US
Erschienen in: Journal of Materials Science: Materials in Electronics / Ausgabe 12/2016
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI: https://doi.org/10.1007/s10854-016-5789-2

Effects of film thickness and stoichiometric on the electrical, optical and photodetector properties of CdS quantum dots thin films deposited by chemically bath deposition method at different bath temperature

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Investigation on the effect of Ti doping on dielectric, impedance and magnetic properties of Ba²⁺-substituted BiFeO₃ ceramics

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