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Erschienen in:
25.05.2020
Investigation on the improved electrical and optical properties of trivalent boron-doped Cu2O thin film and fabrication of Cu2O:B/c-Si heterojunction diode
Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 13/2020
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Abstract
Boron-doped cuprous oxide (Cu2O:B) thin films were deposited on glass and silicon substrates via radio frequency (rf) magnetron co-sputtering at room temperature using metallic copper and boron targets. The influence of B doping on the morphology of Cu2O was studied using X-ray diffraction and spectrometric techniques. Optical transparency and bandgap of the doped films were improved compared to intrinsic Cu2O thin film. X-ray photoelectron spectroscopy confirms that Cu is in + 1 valance state even after doping. Electrical characteristics suggest enhanced p-type conductivity and reduction in resistivity with boron doping, due to the increase in charge carriers. Cu2O:B/c-Si heterojunction shows good rectifying (~ 104) behavior, and the small ∆Ev and high ∆Ec obtained from the flat band diagram suggests its potential application as hole-selective layer in c-Si solar cell.