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2022 | OriginalPaper | Buchkapitel

10. Ion Beam-Assisted Deposition

verfasst von : Bernd Rauschenbach

Erschienen in: Low-Energy Ion Irradiation of Materials

Verlag: Springer International Publishing

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Abstract

In this chapter, the ion beam-assisted deposition (IBAD) method is presented, which is characterized by the deposition of material in high vacuum and the simultaneous bombardment of the surface with hyperthermal or low-energy ions. The individual sub-processes of the layer deposition, such as the generation of the atoms and ions, the transport of the particles through the vacuum and the processes on the surface during the deposition of the atoms under low-energy ion beam irradiation are discussed. The layer growth under ion irradiation is described. In detail, the significance of the ion energy, the temperature and the ion-to-atom arrival ratio for the layer growth is presented. Individual aspects such as epitaxial growth, evolution of topography, grain size, texture, biaxial orientation, mechanical layer stresses, and densification as a result of ion beam-assisted deposition are considered. The explanations and models for these aspects known in the literature are presented and critically discussed. A decisive advantage of IBAD over conventional deposition methods is the controlled fabrication of thin compound films, in particular nitride and oxide films. Examples of the formation of various nitride and oxide layers are presented.

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Literatur
1.
Zurück zum Zitat G.K. Hubler, Fundamentals of ion beam-assisted deposition: Technique and film properties, Mater. Sci. Engng. A 115, 181–192 (1989). Particle bombardment effects in thin film deposition, in Plasma-surface interactions and processing of materials, ed. by. O. Auciello, A. Gras-Marti, J.A. Valles-Abarca, D.L. Flamm (Kluwer Academic Publishers, Dordrecht, 1990), pp. 251–280 G.K. Hubler, Fundamentals of ion beam-assisted deposition: Technique and film properties, Mater. Sci. Engng. A 115, 181–192 (1989). Particle bombardment effects in thin film deposition, in Plasma-surface interactions and processing of materials, ed. by. O. Auciello, A. Gras-Marti, J.A. Valles-Abarca, D.L. Flamm (Kluwer Academic Publishers, Dordrecht, 1990), pp. 251–280
2.
Zurück zum Zitat T. Itoh (ed.), Ion Beam Assisted Film Growth (Elsevier Science Publications, Amsterdam, 1989) T. Itoh (ed.), Ion Beam Assisted Film Growth (Elsevier Science Publications, Amsterdam, 1989)
3.
Zurück zum Zitat F.A. Smidt, Use of ion beam-assisted deposition to modify the microstructure and properties of thin films. Intern. Mater. Rev. 35, 61–128 (1990) CrossRef F.A. Smidt, Use of ion beam-assisted deposition to modify the microstructure and properties of thin films. Intern. Mater. Rev. 35, 61–128 (1990) CrossRef
4.
Zurück zum Zitat J.K. Hirvonen, Ion beam assisted thin film deposition. Mater. Sci. Rep. 6, 215–274 (1991) CrossRef J.K. Hirvonen, Ion beam assisted thin film deposition. Mater. Sci. Rep. 6, 215–274 (1991) CrossRef
5.
Zurück zum Zitat G.K. Wolf, W. Ensinger, Ion bombardment during thin film deposition and its influence on mechanical and chemical surface properties. Nucl. Instr. Meth. Phys. Res. B 59– 60, 173–181 (1991) G.K. Wolf, W. Ensinger, Ion bombardment during thin film deposition and its influence on mechanical and chemical surface properties. Nucl. Instr. Meth. Phys. Res. B 5960, 173–181 (1991)
6.
Zurück zum Zitat B. Rauschenbach, Ion-assisted deposition of thin layers, in Advances in Solid State Physics, ed. by F. Kramer, Vol. 40, (Vieweg & Sohn, Braunschweig 2000), pp. 439–452 B. Rauschenbach, Ion-assisted deposition of thin layers, in Advances in Solid State Physics, ed. by F. Kramer, Vol. 40, (Vieweg & Sohn, Braunschweig 2000), pp. 439–452
7.
Zurück zum Zitat A.R. Gonzalez-Elipe, F. Yubero, J.M. Sanz, Low Energy Ion-assisted Film Growth (Imperial College Press, London, 2003) CrossRef A.R. Gonzalez-Elipe, F. Yubero, J.M. Sanz, Low Energy Ion-assisted Film Growth (Imperial College Press, London, 2003) CrossRef
8.
Zurück zum Zitat D.M. Mattox, Fundamentals of ion plaTiNg. J. Vac. Sci. Technol. 10, 47–52 (1973) CrossRef D.M. Mattox, Fundamentals of ion plaTiNg. J. Vac. Sci. Technol. 10, 47–52 (1973) CrossRef
9.
Zurück zum Zitat L. Pranevicius, Structure and properties of deposits grown by ion beam-activated vacuum deposition techniques. Thin Solid Films 63, 77–85 (1979) CrossRef L. Pranevicius, Structure and properties of deposits grown by ion beam-activated vacuum deposition techniques. Thin Solid Films 63, 77–85 (1979) CrossRef
10.
Zurück zum Zitat C. Weissmantel, G. Reisse, H.-J. Erler, F. Henny, K. Bewilogua, U. Ebersbach, C. Schürer, Preparation of hard coaTiNgs by ion beam methods. Thin Solid Films 63, 315–325 (1979) CrossRef C. Weissmantel, G. Reisse, H.-J. Erler, F. Henny, K. Bewilogua, U. Ebersbach, C. Schürer, Preparation of hard coaTiNgs by ion beam methods. Thin Solid Films 63, 315–325 (1979) CrossRef
11.
Zurück zum Zitat R. Gago, I. Jiménez, J.M. Albella, Thin film growth by ion beam-assisted deposition techniques, in Material Surface Processing by Directed Energy Techniques, ed. by Y. Pauleau, (Elsevier, Amsterdam, 2006), p. 345–382 R. Gago, I. Jiménez, J.M. Albella, Thin film growth by ion beam-assisted deposition techniques, in Material Surface Processing by Directed Energy Techniques, ed. by Y. Pauleau, (Elsevier, Amsterdam, 2006), p. 345–382
12.
Zurück zum Zitat M. Knudson, Das Cosinusgesetz in der kinetischen Gastheorie. Ann. Phys. 48, 1113–1121 (1915) M. Knudson, Das Cosinusgesetz in der kinetischen Gastheorie. Ann. Phys. 48, 1113–1121 (1915)
13.
Zurück zum Zitat D.M. Mattox, Handbook of Physical Vapor Deposition (PVD) Processing (Noyes Publications, Westwood, 1998) D.M. Mattox, Handbook of Physical Vapor Deposition (PVD) Processing (Noyes Publications, Westwood, 1998)
14.
Zurück zum Zitat H.R. Kaufman, R.S. Robinson, Operation of broad-beam sources (Commenwealth Sientific Corporation, Alexandria, 1987) H.R. Kaufman, R.S. Robinson, Operation of broad-beam sources (Commenwealth Sientific Corporation, Alexandria, 1987)
15.
Zurück zum Zitat D. Van Vechten, G.K. Hubler, E.P. Donovan, F.D. Correll, Fundamentals of ion-atom-assisted deposition. I. Model of process and reproducibility of film composition, J. Vac. Sci. Technol. A 8, 821–830 (1990) D. Van Vechten, G.K. Hubler, E.P. Donovan, F.D. Correll, Fundamentals of ion-atom-assisted deposition. I. Model of process and reproducibility of film composition, J. Vac. Sci. Technol. A 8, 821–830 (1990)
16.
Zurück zum Zitat R. Becker, W.B. Herrmannsfeldt, IGUN−A program for the simulation of positive ion extraction including magnetic fields. Rev. Sci. Instrum. 63, 2756–2758 (2008) CrossRef R. Becker, W.B. Herrmannsfeldt, IGUN−A program for the simulation of positive ion extraction including magnetic fields. Rev. Sci. Instrum. 63, 2756–2758 (2008) CrossRef
17.
Zurück zum Zitat D. Van Vechten, G.K. Hubler, E.P. Donovan, Characterization of a 3 cm Kaufman ion source with nitrogen feed gas. Vacuum 36, 841–845 (1986) CrossRef D. Van Vechten, G.K. Hubler, E.P. Donovan, Characterization of a 3 cm Kaufman ion source with nitrogen feed gas. Vacuum 36, 841–845 (1986) CrossRef
18.
Zurück zum Zitat J.W. Gerlach, P. Schumacher, M. Mensing, S. Rauschenbach, I. Cermak and B. Rauschenbach, Ion mass and energy selective hyperthermal ion beam-assisted deposition setup. Rev. Sci. Instrum. 88, 063306 (2017) J.W. Gerlach, P. Schumacher, M. Mensing, S. Rauschenbach, I. Cermak and B. Rauschenbach, Ion mass and energy selective hyperthermal ion beam-assisted deposition setup. Rev. Sci. Instrum. 88, 063306 (2017)
19.
Zurück zum Zitat M.W. Thompson, Physical mechanisms of sputtering. Phys. Rep. 69, 335–371 (1981) CrossRef M.W. Thompson, Physical mechanisms of sputtering. Phys. Rep. 69, 335–371 (1981) CrossRef
20.
Zurück zum Zitat V.V. Serikov, K. Nanbu, Monte Carlo numerical analysis of target erosion and film growth in three-dimensional sputter chamber. J. Vac. Sci. Technol. A 14, 3108–3123 (1996) CrossRef V.V. Serikov, K. Nanbu, Monte Carlo numerical analysis of target erosion and film growth in three-dimensional sputter chamber. J. Vac. Sci. Technol. A 14, 3108–3123 (1996) CrossRef
21.
Zurück zum Zitat R.S. Robinson, Energetic binary collisions in rare gas plasmas, J. Vac. Sci. Technol. A 16, 185 –188 (1979). J.M.E. Harper, J.J. Cuomo, R.J. Gambino, H.R. Kaufman, R.S. Robinson, Mean free path of negative ions in diode sputtering. J. Vac. Sci. Technol. A 15, 1597–1600 (1978) R.S. Robinson, Energetic binary collisions in rare gas plasmas, J. Vac. Sci. Technol. A 16, 185 188 (1979). J.M.E. Harper, J.J. Cuomo, R.J. Gambino, H.R. Kaufman, R.S. Robinson, Mean free path of negative ions in diode sputtering. J. Vac. Sci. Technol. A 15, 1597–1600 (1978)
22.
Zurück zum Zitat A. Gras-Marti, J.A. Valles-Abarca, Slowing down and thermalization of sputtered particles fluxes: energy distributions. J. Appl. Phys. 54, 1071–1075 (1983) CrossRef A. Gras-Marti, J.A. Valles-Abarca, Slowing down and thermalization of sputtered particles fluxes: energy distributions. J. Appl. Phys. 54, 1071–1075 (1983) CrossRef
23.
Zurück zum Zitat E. Fermi, Nuclear physics, course notes, ed. by J. Orear, A.H. Rosenfeld, R.A. Schluter (Midway Reprint, 1949 &1950) E. Fermi, Nuclear physics, course notes, ed. by J. Orear, A.H. Rosenfeld, R.A. Schluter (Midway Reprint, 1949 &1950)
24.
Zurück zum Zitat F. Keywell, A mechanism for sputtering in the high vacuum based upon the theory of neutron cooling. Phys. Rev. 87, 160 –161 (1952). Measurements and collision—radiation damage theory of high-vacuum sputtering. Phys. Rev. 97, 1611–1619 (1955) F. Keywell, A mechanism for sputtering in the high vacuum based upon the theory of neutron cooling. Phys. Rev. 87, 160 161 (1952). Measurements and collision—radiation damage theory of high-vacuum sputtering. Phys. Rev. 97, 1611–1619 (1955)
25.
Zurück zum Zitat K. Meyer, I.K. Schuller, C.M. Falco, Thermalization of sputtered atoms. J. Appl. Phys. 52, 5803–5805 (1981) CrossRef K. Meyer, I.K. Schuller, C.M. Falco, Thermalization of sputtered atoms. J. Appl. Phys. 52, 5803–5805 (1981) CrossRef
26.
Zurück zum Zitat W.D. Westwood, Calculation of the deposition rates in diode sputtering systems. J. Vac. Sci. Technol. 15, 1–9 (1978) CrossRef W.D. Westwood, Calculation of the deposition rates in diode sputtering systems. J. Vac. Sci. Technol. 15, 1–9 (1978) CrossRef
27.
Zurück zum Zitat A. Kirsch, W. Morokoff, Chr. Werner, Selfconsisted simulation of sputter deposition with Monte Carlo method. J. Appl. Phys. 75, 2278–2285 (1994) A. Kirsch, W. Morokoff, Chr. Werner, Selfconsisted simulation of sputter deposition with Monte Carlo method. J. Appl. Phys. 75, 2278–2285 (1994)
28.
Zurück zum Zitat N. Bohr, The penetration of atomic particles through matter, Mat Fys. Medd. Dan. Vid. Selsk. XVIII, no. 8 (1948) N. Bohr, The penetration of atomic particles through matter, Mat Fys. Medd. Dan. Vid. Selsk. XVIII, no. 8 (1948)
29.
Zurück zum Zitat S. Sakabe, Y. Izawa, Cross sections for resonant charge transfer between atoms and their positive ions: collision velocity ≤ 1 .au. Atomic Data and Nucl. Data Table 49, 257–314 (1991) S. Sakabe, Y. Izawa, Cross sections for resonant charge transfer between atoms and their positive ions: collision velocity ≤ 1 .au. Atomic Data and Nucl. Data Table 49, 257–314 (1991)
30.
Zurück zum Zitat S. Schiller, U. Heisig, S. Panzer, Electron Beam Technology (Wiley, New York, 1982) S. Schiller, U. Heisig, S. Panzer, Electron Beam Technology (Wiley, New York, 1982)
31.
Zurück zum Zitat B. Lewis, J.C. Anderson, Nucleation and Growth of Thin Films (Academic, New York, 1978) B. Lewis, J.C. Anderson, Nucleation and Growth of Thin Films (Academic, New York, 1978)
32.
Zurück zum Zitat H. Neddermeyer, STM studies of nucleation and the initial stages of film growth. Crit. Rev. Solid State Mater. Sci. 16, 309–335 (1990) CrossRef H. Neddermeyer, STM studies of nucleation and the initial stages of film growth. Crit. Rev. Solid State Mater. Sci. 16, 309–335 (1990) CrossRef
33.
Zurück zum Zitat I.V. Markov, Crystal Growth for Beginners: Fundamentals of Nucleation and Early Growth Stages and Epitaxy (World Scientific, Singapore, 1995) CrossRef I.V. Markov, Crystal Growth for Beginners: Fundamentals of Nucleation and Early Growth Stages and Epitaxy (World Scientific, Singapore, 1995) CrossRef
34.
Zurück zum Zitat H. Brune, Microscopic view of epitaxial metal growth: nucleation and aggregation. Surf. Sci. Rep. 31, 32–229 (1998) CrossRef H. Brune, Microscopic view of epitaxial metal growth: nucleation and aggregation. Surf. Sci. Rep. 31, 32–229 (1998) CrossRef
35.
Zurück zum Zitat J.E. Greene, The role of low-energy ion/surface interaction effects during crystal growth from vapor phase: nucleation, and growth, microstructure evolution, and defect annihilation, in Handbook of Crystal growth, ed. by D.T.J. Hurle, Vol. 1 (Elsevier, Amsterdam 1993), pp. 639–681 J.E. Greene, The role of low-energy ion/surface interaction effects during crystal growth from vapor phase: nucleation, and growth, microstructure evolution, and defect annihilation, in Handbook of Crystal growth, ed. by D.T.J. Hurle, Vol. 1 (Elsevier, Amsterdam 1993), pp. 639–681
36.
Zurück zum Zitat W.D. Wilson, I.G. Haggmark, J.P. Biersack, Calculations of nuclear stopping, ranges, and straggling in the low-energy region. Phys. Rev. B 15, 2458–2468 (1977) CrossRef W.D. Wilson, I.G. Haggmark, J.P. Biersack, Calculations of nuclear stopping, ranges, and straggling in the low-energy region. Phys. Rev. B 15, 2458–2468 (1977) CrossRef
37.
Zurück zum Zitat E. Bauer, Phänomenologische Theorie der Kristallabscheidung an Oberflächen. Zeitsch. f. Kristallogr. 110, 372–394 (1952) CrossRef E. Bauer, Phänomenologische Theorie der Kristallabscheidung an Oberflächen. Zeitsch. f. Kristallogr. 110, 372–394 (1952) CrossRef
38.
Zurück zum Zitat J.A. Venables, Introduction to surface and thin film processes (Cambridge University Press, Cambridge 2000) and H. Lüth, Surfaces and Interfaces of Solid Surfaces (Springer, Berlin, 1995) J.A. Venables, Introduction to surface and thin film processes (Cambridge University Press, Cambridge 2000) and H. Lüth, Surfaces and Interfaces of Solid Surfaces (Springer, Berlin, 1995)
39.
Zurück zum Zitat J.A. Venables, Rate equation approaches to thin film nucleation kinetics. Phil. Mag. 27, 697–738 (1973) CrossRef J.A. Venables, Rate equation approaches to thin film nucleation kinetics. Phil. Mag. 27, 697–738 (1973) CrossRef
40.
Zurück zum Zitat J.G. Amar, F. Family, P.-M. Lam, Dynamic scaling of the island-size distribution and percolation in a model of submonolayer molecular-beam, epitaxy. Phys Rev. B 50, 8781–8799 (1994) CrossRef J.G. Amar, F. Family, P.-M. Lam, Dynamic scaling of the island-size distribution and percolation in a model of submonolayer molecular-beam, epitaxy. Phys Rev. B 50, 8781–8799 (1994) CrossRef
41.
Zurück zum Zitat J.A. Venables, G.D.T. Spiller, M. Hanbücken, Nucleation and growth of thin films. Rep. Prog. Phys. 47, 399–459 (1984) CrossRef J.A. Venables, G.D.T. Spiller, M. Hanbücken, Nucleation and growth of thin films. Rep. Prog. Phys. 47, 399–459 (1984) CrossRef
42.
Zurück zum Zitat J. Villain, ConTiNuum models of crystal growth from atomic beams with and without desorption. J. Phys. I France 1, 19–42 (1991) CrossRef J. Villain, ConTiNuum models of crystal growth from atomic beams with and without desorption. J. Phys. I France 1, 19–42 (1991) CrossRef
43.
Zurück zum Zitat S. Berg, C. Nender, B. Gelin, Ion-assisted selective deposition of thin films. Vacuum 38, 621–625 (1988) CrossRef S. Berg, C. Nender, B. Gelin, Ion-assisted selective deposition of thin films. Vacuum 38, 621–625 (1988) CrossRef
44.
Zurück zum Zitat W. Möller, D. Bouchier, O. Burat, V. Stambouli, Computer simulation of boron nitride deposition by ion beam-assisted evaporation. Suf. Coat. Technol. 45, 73–81 (1991) CrossRef W. Möller, D. Bouchier, O. Burat, V. Stambouli, Computer simulation of boron nitride deposition by ion beam-assisted evaporation. Suf. Coat. Technol. 45, 73–81 (1991) CrossRef
45.
Zurück zum Zitat G. Carter, Peening ion ion-assisted thin-film deposition: a generalized model, J. Phys. D: Appl. Phys. 27, 1046 –1055 (1994). M.G. McLaren, G. Carter, The species dependence of inert gas ion incorporation in the in-induced deposition of tungsten. J. Appl. Phys. 86, 2889–2895 (1999) G. Carter, Peening ion ion-assisted thin-film deposition: a generalized model, J. Phys. D: Appl. Phys. 27, 1046 1055 (1994). M.G. McLaren, G. Carter, The species dependence of inert gas ion incorporation in the in-induced deposition of tungsten. J. Appl. Phys. 86, 2889–2895 (1999)
46.
Zurück zum Zitat J.-K. Kim, J.S. Colligon, S.-H. Jeong, Mathematical modeling for the composition prediction of compound films grown by ion-assisted deposition technique and its application to TiN x film. Nucl. Instr. Meth. In Phys. Res. B 225, 509–515 (2004) CrossRef J.-K. Kim, J.S. Colligon, S.-H. Jeong, Mathematical modeling for the composition prediction of compound films grown by ion-assisted deposition technique and its application to TiN x film. Nucl. Instr. Meth. In Phys. Res. B 225, 509–515 (2004) CrossRef
47.
Zurück zum Zitat J.E. Greene, S.A. Barnett, J.-E. Sundgren, A. Rockett, Low-energy ion/surface interactions during film growth from the vapor phase: effect on nucleation and growth kinetics, defect structure, and elemental incorporation probabilities, in Plasma-Surface Interactions and Processing of Materials, ed. by O. Auciello, A. Gras-Marti, J.A. Valles-Abarca, L. Flamm (Kluwer Academic Publishers, Dordrecht 1990), pp. 281–311 J.E. Greene, S.A. Barnett, J.-E. Sundgren, A. Rockett, Low-energy ion/surface interactions during film growth from the vapor phase: effect on nucleation and growth kinetics, defect structure, and elemental incorporation probabilities, in Plasma-Surface Interactions and Processing of Materials, ed. by O. Auciello, A. Gras-Marti, J.A. Valles-Abarca, L. Flamm (Kluwer Academic Publishers, Dordrecht 1990), pp. 281–311
48.
Zurück zum Zitat I. Petrov, P.B. Barna, L. Hultman, J.E. Greene, Microstructural evolution during film growth. J. Vac. Sci. Technol. A 21, S118–S128 (2003) CrossRef I. Petrov, P.B. Barna, L. Hultman, J.E. Greene, Microstructural evolution during film growth. J. Vac. Sci. Technol. A 21, S118–S128 (2003) CrossRef
49.
Zurück zum Zitat W. Ensinger, Low energy ion-assisted during deposition – an effective tool for controlling thin film microstructure. Nucl. Instr. Meth. Phys. Res. B 127(128), 796–808 (1997) CrossRef W. Ensinger, Low energy ion-assisted during deposition – an effective tool for controlling thin film microstructure. Nucl. Instr. Meth. Phys. Res. B 127(128), 796–808 (1997) CrossRef
50.
Zurück zum Zitat L. Hanley, S.B. Sinnott, The growth and modification of materials via ion-surface processing. Surf. Sci. 500, 500–522 (2002) CrossRef L. Hanley, S.B. Sinnott, The growth and modification of materials via ion-surface processing. Surf. Sci. 500, 500–522 (2002) CrossRef
51.
Zurück zum Zitat V. Grill, J. Shen, C. Evens, R.G. Cooks, Collisions of ions with surfaces at chemically relevant energies: Instrumentation and phenomena. Rev. Sci. Instr. 72, 3149–3179 (2001) CrossRef V. Grill, J. Shen, C. Evens, R.G. Cooks, Collisions of ions with surfaces at chemically relevant energies: Instrumentation and phenomena. Rev. Sci. Instr. 72, 3149–3179 (2001) CrossRef
52.
Zurück zum Zitat S. Rauschenbach, R. Vogelsang, N. Malinowski, J.W. Gerlach, M. Benyoucef, G. CostanTiNi, Z. Deng, N. Thontasen, K. Kern, Electrospay ion beam deposition: soft landing and fracmentation of functional molecules at solid surfaces. ASC Nano 3, 2901–2910 (2009) CrossRef S. Rauschenbach, R. Vogelsang, N. Malinowski, J.W. Gerlach, M. Benyoucef, G. CostanTiNi, Z. Deng, N. Thontasen, K. Kern, Electrospay ion beam deposition: soft landing and fracmentation of functional molecules at solid surfaces. ASC Nano 3, 2901–2910 (2009) CrossRef
53.
Zurück zum Zitat W. Ensinger, Ion bombardment effects during deposition of nitride and metal films. Surf. Coat. Technnol. 99, 1–13 (1998) CrossRef W. Ensinger, Ion bombardment effects during deposition of nitride and metal films. Surf. Coat. Technnol. 99, 1–13 (1998) CrossRef
54.
Zurück zum Zitat J.E. Yehoda, B. Yang, K. Vedam, R. Messier, Investigation of the void structure in amorphous germanium film thin films as function of low-energy ion bombardment. J. Vac. Sci. Technol. A 6, 1631–1635 (1988) CrossRef J.E. Yehoda, B. Yang, K. Vedam, R. Messier, Investigation of the void structure in amorphous germanium film thin films as function of low-energy ion bombardment. J. Vac. Sci. Technol. A 6, 1631–1635 (1988) CrossRef
55.
Zurück zum Zitat F. Rossi, B. André, A. van Veen, P.E. Mijnarends, H. Schut, F. Labohm, H. Dunlop, M.P. Delplancke, K. Hubbard, Physical properties of a-C: N films produced by ion beam-assisted deposition. J. Mater. Res. 9, 2440–2449 (1994) CrossRef F. Rossi, B. André, A. van Veen, P.E. Mijnarends, H. Schut, F. Labohm, H. Dunlop, M.P. Delplancke, K. Hubbard, Physical properties of a-C: N films produced by ion beam-assisted deposition. J. Mater. Res. 9, 2440–2449 (1994) CrossRef
56.
Zurück zum Zitat K. Kyuno, D.G. Cahill, R.S. Averbeck, J. Tarus, K. Nordlund, Surface defects and bulk defect migration produced by ion bombardment of Si(001). Phys. Rev. Lett. 83, 4788–4791 (1999) CrossRef K. Kyuno, D.G. Cahill, R.S. Averbeck, J. Tarus, K. Nordlund, Surface defects and bulk defect migration produced by ion bombardment of Si(001). Phys. Rev. Lett. 83, 4788–4791 (1999) CrossRef
57.
Zurück zum Zitat K. Yoneyama, K. Ogawa, Scanning tunneling microscope studies on recovery processes of sputter-induced surface defects on Si(111)-7x7. Jpn. J. Appl. Phys. 35, 3719–3723 (1996) CrossRef K. Yoneyama, K. Ogawa, Scanning tunneling microscope studies on recovery processes of sputter-induced surface defects on Si(111)-7x7. Jpn. J. Appl. Phys. 35, 3719–3723 (1996) CrossRef
58.
Zurück zum Zitat O. Rodriguez de la Fuente, M.A. González, J.M. Rojo, Ion bombardment of reconstructed metal surfaces: from tow-dimensional dislocations dipoles to vacancy pits. Phys. Rev. B 63, 085420 (2001) O. Rodriguez de la Fuente, M.A. González, J.M. Rojo, Ion bombardment of reconstructed metal surfaces: from tow-dimensional dislocations dipoles to vacancy pits. Phys. Rev. B 63, 085420 (2001)
59.
Zurück zum Zitat T. Michely, G. Comsa, Generation and nucleation of adatoms during ion bombardment of Pt(111). Phys. Rev. B 44, 8411–8444 (1991) CrossRef T. Michely, G. Comsa, Generation and nucleation of adatoms during ion bombardment of Pt(111). Phys. Rev. B 44, 8411–8444 (1991) CrossRef
60.
Zurück zum Zitat D.E. Harrison, Jr., P.W. Kelly, B.J.- Garrison, N. Winograd, Low energy ion impact phenomena on sigle crystal surfaces. Surf. Sci. 76, 311–322 (1978) D.E. Harrison, Jr., P.W. Kelly, B.J.- Garrison, N. Winograd, Low energy ion impact phenomena on sigle crystal surfaces. Surf. Sci. 76, 311–322 (1978)
61.
Zurück zum Zitat T. Michely, J. Krug, Islands, Mounds, and Atoms, Vol. 42 (Springer Series in Surface Sience. Springer, Berlin 2004) T. Michely, J. Krug, Islands, Mounds, and Atoms, Vol. 42 (Springer Series in Surface Sience. Springer, Berlin 2004)
62.
Zurück zum Zitat G. Rosenfeld, N.N. Lipkin, W. Wulfhekel, J. Kliewer, K. Morgenstern, B. Poelsema, G. Comsa, New concept for controlled homoepitaxy. Appl. Phys. A 61, 455–466 (1995) CrossRef G. Rosenfeld, N.N. Lipkin, W. Wulfhekel, J. Kliewer, K. Morgenstern, B. Poelsema, G. Comsa, New concept for controlled homoepitaxy. Appl. Phys. A 61, 455–466 (1995) CrossRef
63.
Zurück zum Zitat A.V. Dvurechenskii, J.V. Smagina, R. Groetschel, V.A. Zinovyev, V.A. Armbrister, P.L. Novikov, S.A. Teys, A.K. Gutakovskii, Ge/Si quantum dot nanostructures grown with low-energy ion beam assisted epitaxy. Surf. Coat. Technol. 196, 25–29 (2005) CrossRef A.V. Dvurechenskii, J.V. Smagina, R. Groetschel, V.A. Zinovyev, V.A. Armbrister, P.L. Novikov, S.A. Teys, A.K. Gutakovskii, Ge/Si quantum dot nanostructures grown with low-energy ion beam assisted epitaxy. Surf. Coat. Technol. 196, 25–29 (2005) CrossRef
64.
Zurück zum Zitat J.V. Smagina, V.A. Zinovyev, P.L. Novikov, V.A. Armbrister, E.S. Koptev, A.V. Dvurechenskii, Ge/Si nanostructures with quantum dots grown by ion beam assisted heteroepitaxy. J. Phys.: Conf. Series 245, 012071 (2010) J.V. Smagina, V.A. Zinovyev, P.L. Novikov, V.A. Armbrister, E.S. Koptev, A.V. Dvurechenskii, Ge/Si nanostructures with quantum dots grown by ion beam assisted heteroepitaxy. J. Phys.: Conf. Series 245, 012071 (2010)
65.
Zurück zum Zitat K.A. Riekki, I.T. Koponen, Size selected growth of nanodots: Ion beam-assisted deposition and transition from 2D to 3D growth. Nucl. Instr. Meth. Phys. Res. B 290, 48–53 (2012) CrossRef K.A. Riekki, I.T. Koponen, Size selected growth of nanodots: Ion beam-assisted deposition and transition from 2D to 3D growth. Nucl. Instr. Meth. Phys. Res. B 290, 48–53 (2012) CrossRef
66.
Zurück zum Zitat J. Frantz, M.O. Jahma, K. Nordlund, I.T. Koponen, Low-energy deposition of Co onto Co islands on Ag(100): effect on submonolayer growth. Phys. Rev. B 71, 075411 (2005) J. Frantz, M.O. Jahma, K. Nordlund, I.T. Koponen, Low-energy deposition of Co onto Co islands on Ag(100): effect on submonolayer growth. Phys. Rev. B 71, 075411 (2005)
67.
Zurück zum Zitat S. Esch, M. Breeman, M. Morgenstern, T. Michely, G. Comsa, Nucleation and morphology of homoepitaxial Pt(111)-films grown with ion beam-assisted deposition. Surf. Sci. 365, 187–204 (1996) CrossRef S. Esch, M. Breeman, M. Morgenstern, T. Michely, G. Comsa, Nucleation and morphology of homoepitaxial Pt(111)-films grown with ion beam-assisted deposition. Surf. Sci. 365, 187–204 (1996) CrossRef
68.
Zurück zum Zitat A. Nikzad, H.A. Atwater, Microstructure modifications during early stages of ion-beam-asssited film growth of germanium om SiO 2. Suf. Coat. Technol. 51, 243–246 (1992) CrossRef A. Nikzad, H.A. Atwater, Microstructure modifications during early stages of ion-beam-asssited film growth of germanium om SiO 2. Suf. Coat. Technol. 51, 243–246 (1992) CrossRef
69.
Zurück zum Zitat R. Ditchfeld, E.G. Seebauer, Semiconductor surface diffusion: Effects of low-energy ion bombardment, Phys. Rev. B 63, 125317 (2001). Direct measurement of ion-influenced surface diffusion. Phys. Rev. Lett. 82, 1185–1188 (1999) R. Ditchfeld, E.G. Seebauer, Semiconductor surface diffusion: Effects of low-energy ion bombardment, Phys. Rev. B 63, 125317 (2001). Direct measurement of ion-influenced surface diffusion. Phys. Rev. Lett. 82, 1185–1188 (1999)
70.
Zurück zum Zitat Z. Wang, E.G. Seebauer, Extraordinary temperature amplification in ion-stimulated surface processes at low energies. Phys. Rev. B 66, 205409 (2002). Temperature-dependent energy threshold for ion-stimulated defect formation in solids. Phys. Rev. Lett. 95, 015501 (2005) Z. Wang, E.G. Seebauer, Extraordinary temperature amplification in ion-stimulated surface processes at low energies. Phys. Rev. B 66, 205409 (2002). Temperature-dependent energy threshold for ion-stimulated defect formation in solids. Phys. Rev. Lett. 95, 015501 (2005)
71.
Zurück zum Zitat H.A. Atwater, Low energy ion-solid interactions during epitaxial growth. Solid State Phenom. 27, 67–106 (1992) CrossRef H.A. Atwater, Low energy ion-solid interactions during epitaxial growth. Solid State Phenom. 27, 67–106 (1992) CrossRef
72.
Zurück zum Zitat V.O. Babaev, Ju. V. Bykov, M.B. Guseva, Effect of ion irradiation on the formation, structure and properties of thin metal films. Thin Solid Films 38 (1976), 1–8 V.O. Babaev, Ju. V. Bykov, M.B. Guseva, Effect of ion irradiation on the formation, structure and properties of thin metal films. Thin Solid Films 38 (1976), 1–8
73.
Zurück zum Zitat S. Shimizu, O. Tsukakoshi, S. Komiya, Y. Makita, A molecular and ion beam epitaxy system for the growth of III-V compound semiconductors using a mass-separated low-energy group-V ion beam. Jap. J. Appl. Phys. 24, 1130–1140 (1985) CrossRef S. Shimizu, O. Tsukakoshi, S. Komiya, Y. Makita, A molecular and ion beam epitaxy system for the growth of III-V compound semiconductors using a mass-separated low-energy group-V ion beam. Jap. J. Appl. Phys. 24, 1130–1140 (1985) CrossRef
74.
Zurück zum Zitat T. Itoh, T. Nakamura, M. Muromachi, T. Sugiyama, Low temperature silicon epitaxy by partially ionized vapor deposition. Jap. J. Appl. Phys. 16, 553–557 (1977) CrossRef T. Itoh, T. Nakamura, M. Muromachi, T. Sugiyama, Low temperature silicon epitaxy by partially ionized vapor deposition. Jap. J. Appl. Phys. 16, 553–557 (1977) CrossRef
75.
Zurück zum Zitat G.K. Wehner, R.M. Warner Jr., P.D. Wang, Y.H. Kim, SubstituTiNg low-energy (< 30 eV) ion bombardment for elevated temperatures in silicon epitaxy. J. Appl. Phys. 64, 6754–6760 (1988) CrossRef G.K. Wehner, R.M. Warner Jr., P.D. Wang, Y.H. Kim, SubstituTiNg low-energy (< 30 eV) ion bombardment for elevated temperatures in silicon epitaxy. J. Appl. Phys. 64, 6754–6760 (1988) CrossRef
76.
Zurück zum Zitat S.W. Park, J.Y. Shim, H.K. Baik, Low temperature epitaxial growth of Si 05Ge 05 alloy layer on Si(001) by ion beam-assisted deposition. J. Electro. Mater. 25, 1399–1406 (1995) CrossRef S.W. Park, J.Y. Shim, H.K. Baik, Low temperature epitaxial growth of Si 05Ge 05 alloy layer on Si(001) by ion beam-assisted deposition. J. Electro. Mater. 25, 1399–1406 (1995) CrossRef
77.
Zurück zum Zitat L. Neumann, in Anfangsstadium des ionenstrahlgestützten epitaktischen Wachstums von Galliumnitrid-Schichten auf Siliziumkarbid. Dissertation, University of Leipzig L. Neumann, in Anfangsstadium des ionenstrahlgestützten epitaktischen Wachstums von Galliumnitrid-Schichten auf Siliziumkarbid. Dissertation, University of Leipzig
78.
Zurück zum Zitat D. Poppitz, A. Lotnyk, J.W. Gerlach, J. Lenzner, M. Grundmann, B. Rauschenbach, An aberration corrected STEM study of structural defects in epitaxial GaN thin films grown by ion beam assisted MBE. Micron 73, 1–8 (2015) CrossRef D. Poppitz, A. Lotnyk, J.W. Gerlach, J. Lenzner, M. Grundmann, B. Rauschenbach, An aberration corrected STEM study of structural defects in epitaxial GaN thin films grown by ion beam assisted MBE. Micron 73, 1–8 (2015) CrossRef
79.
Zurück zum Zitat S. Sienz, J.W. Gerlach, T. Höche, A. Sidorenko, B. Rauschenbach, Ion beam-assisted molecular-beam epitaxy: a method to deposit gallium nitride films with high crystalline quality. Thin Solid Films 458, 63–66 (2004) CrossRef S. Sienz, J.W. Gerlach, T. Höche, A. Sidorenko, B. Rauschenbach, Ion beam-assisted molecular-beam epitaxy: a method to deposit gallium nitride films with high crystalline quality. Thin Solid Films 458, 63–66 (2004) CrossRef
80.
Zurück zum Zitat A. Finzel, Ionenstrahlgestützte Molekularstrahlepitaxie von Galliumnitrid-Schichten auf Silizium. Dissertation, University Leipzig, 2016 A. Finzel, Ionenstrahlgestützte Molekularstrahlepitaxie von Galliumnitrid-Schichten auf Silizium. Dissertation, University Leipzig, 2016
81.
Zurück zum Zitat L. Neumann, J.W. Gerlach, B. Rauschenbach, Initial stages of the ion beam assisted epitaxial GaN film growth on 6H-SiC(0001). Thin Solid Films 520, 3936–3945 (2012) CrossRef L. Neumann, J.W. Gerlach, B. Rauschenbach, Initial stages of the ion beam assisted epitaxial GaN film growth on 6H-SiC(0001). Thin Solid Films 520, 3936–3945 (2012) CrossRef
82.
Zurück zum Zitat B. Rauschenbach, A. Lotnyk, L. Neumann, D. Poppitz, J.W. Gerlach, Ion beam-assisted deposition of thin epitaxial GaN films. Materials 10, 690–703 (2017) CrossRef B. Rauschenbach, A. Lotnyk, L. Neumann, D. Poppitz, J.W. Gerlach, Ion beam-assisted deposition of thin epitaxial GaN films. Materials 10, 690–703 (2017) CrossRef
83.
Zurück zum Zitat B. Strickland, C. Roland, Low-temperature growth and ion-assisted deposition. Phys. Rev. B 51, 5061–5064 (1995) CrossRef B. Strickland, C. Roland, Low-temperature growth and ion-assisted deposition. Phys. Rev. B 51, 5061–5064 (1995) CrossRef
84.
Zurück zum Zitat S. Blackwell, R. Smith, S.D. Kenny, J.M. Walls, Modeling evaporation, ion beam assist, and magnetron sputtering of thin metal films over realistic time scales. Phys. Rev. B 86, 035416 (2012) S. Blackwell, R. Smith, S.D. Kenny, J.M. Walls, Modeling evaporation, ion beam assist, and magnetron sputtering of thin metal films over realistic time scales. Phys. Rev. B 86, 035416 (2012)
85.
Zurück zum Zitat E. Chason, B.K. Kellerman, Monte Carlo simulations of ion-enhanced island coarsening. Nucl. Instr. Meth in Phys. Res. B 127(128), 225–229 (1997) CrossRef E. Chason, B.K. Kellerman, Monte Carlo simulations of ion-enhanced island coarsening. Nucl. Instr. Meth in Phys. Res. B 127(128), 225–229 (1997) CrossRef
86.
Zurück zum Zitat J. Jacobson, B.H. Cooper, J.P. Sethna, Simulations of energetic beam deposition: from picoseconds to seconds. Phys. Rev. B 58, 15847–15865 (1998) CrossRef J. Jacobson, B.H. Cooper, J.P. Sethna, Simulations of energetic beam deposition: from picoseconds to seconds. Phys. Rev. B 58, 15847–15865 (1998) CrossRef
87.
Zurück zum Zitat B.S. Bunnik, C. de Hoog, E.F.C. Haddeman, B.J. Thijsse, Molecular dynamics study of Cu deposition on Mo and the effects of low-energy ion irradiation. Nucl. Instr. Meth B 187, 57–65 (2002) CrossRef B.S. Bunnik, C. de Hoog, E.F.C. Haddeman, B.J. Thijsse, Molecular dynamics study of Cu deposition on Mo and the effects of low-energy ion irradiation. Nucl. Instr. Meth B 187, 57–65 (2002) CrossRef
88.
Zurück zum Zitat X.W. Zhou, D.A. Murdick, B. Gillespie, H.N.G. Wadley, Atomic assembly during GaN film growth: molecular dynamics simulation. Phys. Rev. B 73, 045337 (2006) X.W. Zhou, D.A. Murdick, B. Gillespie, H.N.G. Wadley, Atomic assembly during GaN film growth: molecular dynamics simulation. Phys. Rev. B 73, 045337 (2006)
89.
Zurück zum Zitat H.-C. Petzold, P.J. Heard, Ion-induced deposition for X-ray mask repair: Rate optimization using a time-dependent model. J. Vac. Sc. Technol. B 9, 2664–2669 (1991) CrossRef H.-C. Petzold, P.J. Heard, Ion-induced deposition for X-ray mask repair: Rate optimization using a time-dependent model. J. Vac. Sc. Technol. B 9, 2664–2669 (1991) CrossRef
90.
Zurück zum Zitat H.O. Funsten, Model for beam-induced deposition of thin metallic films, Nucl. Instr. Meth Phys. Res. B 72, 183 –196 (1992), and H.O. Funsten, J.W. Boring, R.E. Johnson, W.L. Brown, Low-temperature beam-induced deposition of thin films. J. Appl. Phys. 71,1475–1484 (1992) H.O. Funsten, Model for beam-induced deposition of thin metallic films, Nucl. Instr. Meth Phys. Res. B 72, 183 196 (1992), and H.O. Funsten, J.W. Boring, R.E. Johnson, W.L. Brown, Low-temperature beam-induced deposition of thin films. J. Appl. Phys. 71,1475–1484 (1992)
91.
Zurück zum Zitat G. Carter, Island-density and size dynamics in ion-assisted atomic deposition. Vacuum 55, 235–247 (1999) CrossRef G. Carter, Island-density and size dynamics in ion-assisted atomic deposition. Vacuum 55, 235–247 (1999) CrossRef
92.
Zurück zum Zitat I.T. Koponen, M. Rusanen, J. Heinonen, Island size distributions in submonolayer growth with mobile islands and breakup. Phys. Rev. E 58, 4037 –4040 (1998). M.O. Jahma, I.T. Koponen, T. Ala.Nissila, Optimal conditions for submonolayer nonoisland growth in ion beam-assisted deposition. Surf. Sci. 601, 5628–5634 (2007) I.T. Koponen, M. Rusanen, J. Heinonen, Island size distributions in submonolayer growth with mobile islands and breakup. Phys. Rev. E 58, 4037 4040 (1998). M.O. Jahma, I.T. Koponen, T. Ala.Nissila, Optimal conditions for submonolayer nonoisland growth in ion beam-assisted deposition. Surf. Sci. 601, 5628–5634 (2007)
93.
Zurück zum Zitat I.T. Koponen, Modeling layer.by-layer growth in ion beam-assisted deposition of thin films, Nucl. Instr. Meth in Phys. Res. B 171, 314–324 (2000) I.T. Koponen, Modeling layer.by-layer growth in ion beam-assisted deposition of thin films, Nucl. Instr. Meth in Phys. Res. B 171, 314–324 (2000)
94.
Zurück zum Zitat R.C. Powell, N.E. Lee, Y.W. Kim, J.E. Greene, Heteroepitaxial wurtzite and zincblende structure GaN grown by reactive ion molecular beam epitaxy: Growth kinetics, microstructure, and properties J. Appl. Phys. 73, 189–204 (1993) CrossRef R.C. Powell, N.E. Lee, Y.W. Kim, J.E. Greene, Heteroepitaxial wurtzite and zincblende structure GaN grown by reactive ion molecular beam epitaxy: Growth kinetics, microstructure, and properties J. Appl. Phys. 73, 189–204 (1993) CrossRef
95.
Zurück zum Zitat Yu. V. Truskin, D.V. Kulikov, K.L. Safonov, J.W. Gerlach, Th. Höche, B. Rauschenbach, Atomic assembly during ion beam assisted growth: Kinetic modeling. J. Appl. Phys. 103, 114904 (2008) Yu. V. Truskin, D.V. Kulikov, K.L. Safonov, J.W. Gerlach, Th. Höche, B. Rauschenbach, Atomic assembly during ion beam assisted growth: Kinetic modeling. J. Appl. Phys. 103, 114904 (2008)
96.
Zurück zum Zitat L. Hultmann, W.-D. Münz, J. Musil, K. Kadlec, I. Petrov, J.E. Greene, Low-energy (~100 eV) ion irradiation during growth of TiN deposited by reactive magnetron sputtering: effects of ion flux on film microstructure. J. Vac. Sci. Technol. A 9, 434–438 (1991) CrossRef L. Hultmann, W.-D. Münz, J. Musil, K. Kadlec, I. Petrov, J.E. Greene, Low-energy (~100 eV) ion irradiation during growth of TiN deposited by reactive magnetron sputtering: effects of ion flux on film microstructure. J. Vac. Sci. Technol. A 9, 434–438 (1991) CrossRef
97.
Zurück zum Zitat J.W. Gerlach, R. Schwertberger, D. Schrupp, S. Sienz, W. Attenberger, B. Rauschenbach, Influence of the ion irradiation during low-energy nitrogen ion-assisted deposition of wurtzitic gallium nitride films on sapphire, Proceed. Intern. Workshop on Nitride semiconductors, IPAP Conference Series 1, 202–205 (2000) J.W. Gerlach, R. Schwertberger, D. Schrupp, S. Sienz, W. Attenberger, B. Rauschenbach, Influence of the ion irradiation during low-energy nitrogen ion-assisted deposition of wurtzitic gallium nitride films on sapphire, Proceed. Intern. Workshop on Nitride semiconductors, IPAP Conference Series 1, 202–205 (2000)
98.
Zurück zum Zitat J.W. Rabalais, A.H. Al-Bayati, K.J.Boyd, D. Marton, J. Kulik, Z. Zhang, W.K. Chu, Ion-energy effects in silicon ion beam epitaxy. Phys. Rev. B 53, 10781–10792 (1996) J.W. Rabalais, A.H. Al-Bayati, K.J.Boyd, D. Marton, J. Kulik, Z. Zhang, W.K. Chu, Ion-energy effects in silicon ion beam epitaxy. Phys. Rev. B 53, 10781–10792 (1996)
99.
Zurück zum Zitat S. Mohajerzadeh, C.R. Selvakumar, D.E. Brodie, M.D. Robertson, J.M. Corbett, An ion beam vapor deposition technique for epitaxial growth of Si-Ge films on Si substrate. J. Vac. Sci. Technol. A 14, 1963–1972 (1996) CrossRef S. Mohajerzadeh, C.R. Selvakumar, D.E. Brodie, M.D. Robertson, J.M. Corbett, An ion beam vapor deposition technique for epitaxial growth of Si-Ge films on Si substrate. J. Vac. Sci. Technol. A 14, 1963–1972 (1996) CrossRef
100.
Zurück zum Zitat D.K. Brice, J.Y. Tsao, S.T. Picraux, Partitioning of ion-induced surface and bulk displacements. Nucl. Instr. Meth. In Phys. Res. B 44, 68–78 (1989) CrossRef D.K. Brice, J.Y. Tsao, S.T. Picraux, Partitioning of ion-induced surface and bulk displacements. Nucl. Instr. Meth. In Phys. Res. B 44, 68–78 (1989) CrossRef
101.
Zurück zum Zitat Z.Q. Ma, Y.F. Zheng, B.X. Liu, Ion-induced surface and bulk displacement threshold for epitaxial growth. Phys. Stat. Sol. (A) 169, 239 –248 (1998). Sketching of preferred energy regime for ion beam assisted epitaxy, App. Surf. Sci. 137, 184–190 (1999) Z.Q. Ma, Y.F. Zheng, B.X. Liu, Ion-induced surface and bulk displacement threshold for epitaxial growth. Phys. Stat. Sol. (A) 169, 239 248 (1998). Sketching of preferred energy regime for ion beam assisted epitaxy, App. Surf. Sci. 137, 184–190 (1999)
102.
Zurück zum Zitat B.A. Movchan, A.V. Demchishin, Study of the structure and properties of thick vacuum condensates of nickel, titanium, tungsten, aluminum oxide and zirconium dioxide. Phys. Met. Metallogr. 28, 83–90 (1969) B.A. Movchan, A.V. Demchishin, Study of the structure and properties of thick vacuum condensates of nickel, titanium, tungsten, aluminum oxide and zirconium dioxide. Phys. Met. Metallogr. 28, 83–90 (1969)
103.
Zurück zum Zitat J.A. Thornton, Influence of apparatus geometry and deposition conditions on the structure and topography of thick sputtered coaTiNgs. J. Vac. Sci. Technol. 11, 666–670 (1974) CrossRef J.A. Thornton, Influence of apparatus geometry and deposition conditions on the structure and topography of thick sputtered coaTiNgs. J. Vac. Sci. Technol. 11, 666–670 (1974) CrossRef
104.
Zurück zum Zitat R. Messier, A.P. Giri, R.A. Roy, Revised structure zone model for thin film physical structure. J. Vac. Sci. Technol. A 2, 500–503 (1984) CrossRef R. Messier, A.P. Giri, R.A. Roy, Revised structure zone model for thin film physical structure. J. Vac. Sci. Technol. A 2, 500–503 (1984) CrossRef
105.
Zurück zum Zitat F. Adibi, I. Petrov, J.E. Greene, L. Hultman, J.-E. Sundgren, Effects of high-flux low-energy (20–100 eV) ion irradiation during deposition on microstructure and preferred orientation of Ti 0.5Al 0.5N alloys grown by ultrahigh-vacuum reactive magnetron sputtering. J. Appl. Phys. 73, 8580–8589 (1993) F. Adibi, I. Petrov, J.E. Greene, L. Hultman, J.-E. Sundgren, Effects of high-flux low-energy (20–100 eV) ion irradiation during deposition on microstructure and preferred orientation of Ti 0.5Al 0.5N alloys grown by ultrahigh-vacuum reactive magnetron sputtering. J. Appl. Phys. 73, 8580–8589 (1993)
106.
Zurück zum Zitat J.W. Gerlach, S. Sienz, W. Attenberger, B. Rauschenbach, Competition of epitaxy and ion beam irradiation-determined texture during ion beam-assisted deposition of gallium nitride films on r-plane sapphire. Phys. Stat. Sol. (c) 1, 161–165 (2002) J.W. Gerlach, S. Sienz, W. Attenberger, B. Rauschenbach, Competition of epitaxy and ion beam irradiation-determined texture during ion beam-assisted deposition of gallium nitride films on r-plane sapphire. Phys. Stat. Sol. (c) 1, 161–165 (2002)
107.
Zurück zum Zitat J.M. Pomeroy, J. Jacobson, C.C. Hill, B.H. Cooper, J.P. Sethna, Kinetic Monte Carlo-molecular dynamics investigations of hyperthermal copper deposition on Cu(111). Phys. Rev. B 66, 235412 (2002) J.M. Pomeroy, J. Jacobson, C.C. Hill, B.H. Cooper, J.P. Sethna, Kinetic Monte Carlo-molecular dynamics investigations of hyperthermal copper deposition on Cu(111). Phys. Rev. B 66, 235412 (2002)
108.
Zurück zum Zitat K. Vanormelingen, B. Degroote, H. Pattyn, A. Vantomme, Thin film growth using hyperthermal ions: a surface morphology study. Surf. Sci. 561, 147–153 (2004) CrossRef K. Vanormelingen, B. Degroote, H. Pattyn, A. Vantomme, Thin film growth using hyperthermal ions: a surface morphology study. Surf. Sci. 561, 147–153 (2004) CrossRef
109.
Zurück zum Zitat T. Sikola, J. Spousta, L. Dittrichova, L. Benes, V. Perina, D. Rafaja, Ion beam-assisted deposition of metallic and ceramic thin films. Nucl. Instr. Meth. Res. Phys. B 127(128), 673–676 (1997) CrossRef T. Sikola, J. Spousta, L. Dittrichova, L. Benes, V. Perina, D. Rafaja, Ion beam-assisted deposition of metallic and ceramic thin films. Nucl. Instr. Meth. Res. Phys. B 127(128), 673–676 (1997) CrossRef
110.
Zurück zum Zitat X.M. Yang, X.M. Wu, L.J. Zhuge, F. Zhou, Influence of assisted ion energy on surface roughness and mechanical properties of boron carbon nitride films synthesized by DIBSD. Appl. Surf. Sci. 255, 4279–4282 (2009) CrossRef X.M. Yang, X.M. Wu, L.J. Zhuge, F. Zhou, Influence of assisted ion energy on surface roughness and mechanical properties of boron carbon nitride films synthesized by DIBSD. Appl. Surf. Sci. 255, 4279–4282 (2009) CrossRef
111.
Zurück zum Zitat Z.H. Li, E.S. Cho, S.J. Kwon, Analysis of a MgO protective layer deposited with ion beam-assisted deposition in an AC PDP. J. Korean Phys. Soc. 49, 2332–2337 (2006) Z.H. Li, E.S. Cho, S.J. Kwon, Analysis of a MgO protective layer deposited with ion beam-assisted deposition in an AC PDP. J. Korean Phys. Soc. 49, 2332–2337 (2006)
112.
Zurück zum Zitat S. Miyata, A. Ibi, T. Izumi, Y. Shioara, Surface roughness of MgO thin film and its critical thickness for optimal biaxial texturing by ion beam-assisted deposition. J. Appl. Phys. 109, 113922 (2011) S. Miyata, A. Ibi, T. Izumi, Y. Shioara, Surface roughness of MgO thin film and its critical thickness for optimal biaxial texturing by ion beam-assisted deposition. J. Appl. Phys. 109, 113922 (2011)
113.
Zurück zum Zitat M. Marinov, Effect of ion bombardment on the initial stages of thin film growth. Thin Solid Films 46, 267–274 (1977) CrossRef M. Marinov, Effect of ion bombardment on the initial stages of thin film growth. Thin Solid Films 46, 267–274 (1977) CrossRef
114.
Zurück zum Zitat T.C. Huang, G. Lim, F. Parmigiani, E. Kay, Effect of ion bombardment during deposition on the x-ray microstructure of thin silver films. J. Vac, Sci. Technol. A 3, 2161–2166 (1988) T.C. Huang, G. Lim, F. Parmigiani, E. Kay, Effect of ion bombardment during deposition on the x-ray microstructure of thin silver films. J. Vac, Sci. Technol. A 3, 2161–2166 (1988)
115.
Zurück zum Zitat R.A. Roy, J.J. Cuomo, D.S. Yee, Control of microstructure and properties of copper films using ion-assisted deposition. J. Vac. Sci. Technol. A 6, 1621–1626 (1988) CrossRef R.A. Roy, J.J. Cuomo, D.S. Yee, Control of microstructure and properties of copper films using ion-assisted deposition. J. Vac. Sci. Technol. A 6, 1621–1626 (1988) CrossRef
116.
Zurück zum Zitat W. Ensinger, B. Rauschenbach, Microstructural investigations on titanium nitride formed by medium energy ion beam-assisted deposition. Nucl. Instr. Meth. in Phys. Res. B 80(81), 1409–1414 (1993) CrossRef W. Ensinger, B. Rauschenbach, Microstructural investigations on titanium nitride formed by medium energy ion beam-assisted deposition. Nucl. Instr. Meth. in Phys. Res. B 80(81), 1409–1414 (1993) CrossRef
117.
Zurück zum Zitat W. Ensinger, The influence of the ion flux density on the properties of molybdenum films deposited from the vapour phase under simultaneous argon ion irradiation. Thin Solid Films 272, 54–57 (1996) CrossRef W. Ensinger, The influence of the ion flux density on the properties of molybdenum films deposited from the vapour phase under simultaneous argon ion irradiation. Thin Solid Films 272, 54–57 (1996) CrossRef
118.
Zurück zum Zitat K. Rajan, R. Roy, J. Trogolo, J.J. Cuomo, Low energy ion beam assisted grain size evolution in thin film deposition. J. Electr. Mater. 26, 1270–1273 (1997) CrossRef K. Rajan, R. Roy, J. Trogolo, J.J. Cuomo, Low energy ion beam assisted grain size evolution in thin film deposition. J. Electr. Mater. 26, 1270–1273 (1997) CrossRef
119.
Zurück zum Zitat H. Ma, Y. Zou, A.S. Sologubenko, R. Spolenak, Copper thin films by ion beam assisted deposition: strong texture, superior thermal stability and enhanced hardness. Acta Mater. 98, 17–28 (2015) CrossRef H. Ma, Y. Zou, A.S. Sologubenko, R. Spolenak, Copper thin films by ion beam assisted deposition: strong texture, superior thermal stability and enhanced hardness. Acta Mater. 98, 17–28 (2015) CrossRef
120.
Zurück zum Zitat J.M. López, F.J. Gordillo-Vázquez, O. Böhme, J.M. Albella, Low grain size TiN thin films obtained by low energy ion beam-assisted deposition. Appl. Surf. Sci. 173, 290–295 (2001) CrossRef J.M. López, F.J. Gordillo-Vázquez, O. Böhme, J.M. Albella, Low grain size TiN thin films obtained by low energy ion beam-assisted deposition. Appl. Surf. Sci. 173, 290–295 (2001) CrossRef
121.
Zurück zum Zitat K. Helming, B. Rauschenbach, R.A. Schwarzer, Analysis of crystallographic texture in small sample areas. Textures Microstructures 26–27, 111–124 (1996) CrossRef K. Helming, B. Rauschenbach, R.A. Schwarzer, Analysis of crystallographic texture in small sample areas. Textures Microstructures 26–27, 111–124 (1996) CrossRef
122.
Zurück zum Zitat B. Rauschenbach, K. Helming, Implantation-induced texture. Instr. Meth. in Phys. Res. B 42, 216–223 (1989) CrossRef B. Rauschenbach, K. Helming, Implantation-induced texture. Instr. Meth. in Phys. Res. B 42, 216–223 (1989) CrossRef
123.
Zurück zum Zitat D. Dobrev, Ion beam-induced texture formation in vacuum-condensed thin metal films. Thin Solid Films 92, 41–53 (1982) CrossRef D. Dobrev, Ion beam-induced texture formation in vacuum-condensed thin metal films. Thin Solid Films 92, 41–53 (1982) CrossRef
124.
Zurück zum Zitat Y. Iijima, N. Tanabe, O. Kohno, Y. Ikeno, In-plane aligned YBa 2Cu 3O 7-x thin films deposited on polycrystalline metallic substrates. Appl. Phys. Lett. 60, 769–771 (1992) CrossRef Y. Iijima, N. Tanabe, O. Kohno, Y. Ikeno, In-plane aligned YBa 2Cu 3O 7-x thin films deposited on polycrystalline metallic substrates. Appl. Phys. Lett. 60, 769–771 (1992) CrossRef
125.
Zurück zum Zitat L.S. Yu, J.M.E. Haper, J.J. Cuomo, D.A. Smith, Alignment of thin films by glancing angle ion bombardment during deposition. Appl. Phys. Lett. 47, 932–933 (1985) CrossRef L.S. Yu, J.M.E. Haper, J.J. Cuomo, D.A. Smith, Alignment of thin films by glancing angle ion bombardment during deposition. Appl. Phys. Lett. 47, 932–933 (1985) CrossRef
126.
Zurück zum Zitat J.J. Trillat, L. Tertain, Etude des structures superficielles par diffraction électronique et bombardement ionique combinés. Applications. J. Chim. Phys. Phys.-Chim. Biol. 53, 570–578 (1956) J.J. Trillat, L. Tertain, Etude des structures superficielles par diffraction électronique et bombardement ionique combinés. Applications. J. Chim. Phys. Phys.-Chim. Biol. 53, 570–578 (1956)
127.
Zurück zum Zitat G.J. Ogilvie, The structure of silver crystals after argon-ion bombardment. J. Phys. Chem. Solids 10, 222–228 (1959) CrossRef G.J. Ogilvie, The structure of silver crystals after argon-ion bombardment. J. Phys. Chem. Solids 10, 222–228 (1959) CrossRef
128.
Zurück zum Zitat G.J. Ogilvie, A.A. Thomson, Influence of temperature and bombardment rate on disorientation of silver single crystals by ion bombardment. J. Phys. Chem. Solids 17, 203–209 (1961) CrossRef G.J. Ogilvie, A.A. Thomson, Influence of temperature and bombardment rate on disorientation of silver single crystals by ion bombardment. J. Phys. Chem. Solids 17, 203–209 (1961) CrossRef
129.
Zurück zum Zitat G.N. van Wyk, N.J. Smith, Ion bombardment induced preferential orientation in polycrystalline Cu Targets. Rad. Eff. 38, 245–247 (1987) G.N. van Wyk, N.J. Smith, Ion bombardment induced preferential orientation in polycrystalline Cu Targets. Rad. Eff. 38, 245–247 (1987)
130.
Zurück zum Zitat B. Rauschenbach, J.W. Gerlach, Texture development in titanium nitride thin films grown by low-energy ion deposition. Cryst. Res. Technol. 35, 675–688 (2000) CrossRef B. Rauschenbach, J.W. Gerlach, Texture development in titanium nitride thin films grown by low-energy ion deposition. Cryst. Res. Technol. 35, 675–688 (2000) CrossRef
131.
Zurück zum Zitat H. Wengenmair, J.W. Gerlach, U. Preckwinkel, B. Stritzker, B. Rauschenbach, Photon and ion beam-assisted deposition of titanium nitride. Appl. Surf. Sci. 99, 313–318 (1996) CrossRef H. Wengenmair, J.W. Gerlach, U. Preckwinkel, B. Stritzker, B. Rauschenbach, Photon and ion beam-assisted deposition of titanium nitride. Appl. Surf. Sci. 99, 313–318 (1996) CrossRef
132.
Zurück zum Zitat L. Hultman, J.-E. Sundgren, J.E. Greene, D.B. Bergstrom, I. Petrov, High-flux low-energy (20 eV) N + 2 ion irradiation during TiN deposition by reactive magnetron sputtering: effects on microstructure and preferred orientation. J. Appl. Phys. 78, 5395–5403 (1995) CrossRef L. Hultman, J.-E. Sundgren, J.E. Greene, D.B. Bergstrom, I. Petrov, High-flux low-energy (20 eV) N + 2 ion irradiation during TiN deposition by reactive magnetron sputtering: effects on microstructure and preferred orientation. J. Appl. Phys. 78, 5395–5403 (1995) CrossRef
133.
Zurück zum Zitat D. Edström, D.G. Sangiovanni, L. Hultman, I. Petrov, J.E. Greene, V. Chirita, TiN film growth on misoriented TiN grains with simultaneous low-energy bombardment: restructuring leading to epitaxy. Thin Solid Films 688, 137380 (2019) D. Edström, D.G. Sangiovanni, L. Hultman, I. Petrov, J.E. Greene, V. Chirita, TiN film growth on misoriented TiN grains with simultaneous low-energy bombardment: restructuring leading to epitaxy. Thin Solid Films 688, 137380 (2019)
134.
Zurück zum Zitat D. Gall, I. Petrov, L.D. Madson, J.-E. Sundgren, J.E. Greene, Microstructure and electronic properties of the refractory semiconductor ScN grown on MgO(001) by ultra-high-vacuum reactive magnetron sputter deposition. J. Vac. Sci. Technol. A 16, 2411–2417 (1998) CrossRef D. Gall, I. Petrov, L.D. Madson, J.-E. Sundgren, J.E. Greene, Microstructure and electronic properties of the refractory semiconductor ScN grown on MgO(001) by ultra-high-vacuum reactive magnetron sputter deposition. J. Vac. Sci. Technol. A 16, 2411–2417 (1998) CrossRef
135.
Zurück zum Zitat J.W. Gerlach, U. Preckwinkel, H. Wengenmair, T. Kraus, B. Rauschenbach, Biaxial alignment of TiN films prepared by ion beam-assisted deposition. Appl. Phys. Lett. 68, 2360–2362 (1996) CrossRef J.W. Gerlach, U. Preckwinkel, H. Wengenmair, T. Kraus, B. Rauschenbach, Biaxial alignment of TiN films prepared by ion beam-assisted deposition. Appl. Phys. Lett. 68, 2360–2362 (1996) CrossRef
136.
Zurück zum Zitat J. Dzick, S. Sievers, J. Hoffmann, K. Thiele, F. Garcia-Moreno, A. Usoskin, C. Jooss, H.C. Freyhardt, Biaxially textured buffer layers on large-area polycrystalline substrates. Mat. Soc. Symp. Proc. 595, 55–66 (2000) J. Dzick, S. Sievers, J. Hoffmann, K. Thiele, F. Garcia-Moreno, A. Usoskin, C. Jooss, H.C. Freyhardt, Biaxially textured buffer layers on large-area polycrystalline substrates. Mat. Soc. Symp. Proc. 595, 55–66 (2000)
137.
Zurück zum Zitat K.G. Ressler, N. Sonneenberg, M.J. Cima, The development of biaxial alignment in yttria-stabilized zirconia films fabricated by ion beam-assisted deposition. J. Electr. Mater. 25, 35 –43 (1996). Mechanism of biaxial alignment of oxide thin films during ion beam-assisted deposition J. Am. Ceram. Soc. 80, 2637–264 (1997) K.G. Ressler, N. Sonneenberg, M.J. Cima, The development of biaxial alignment in yttria-stabilized zirconia films fabricated by ion beam-assisted deposition. J. Electr. Mater. 25, 35 43 (1996). Mechanism of biaxial alignment of oxide thin films during ion beam-assisted deposition J. Am. Ceram. Soc. 80, 2637–264 (1997)
138.
Zurück zum Zitat A. van der Drift, Evolutionary selection, a principle governing growth orientation in vapour-deposited layers. Philips Res. Rep. 22, 267–288 (1967) A. van der Drift, Evolutionary selection, a principle governing growth orientation in vapour-deposited layers. Philips Res. Rep. 22, 267–288 (1967)
139.
Zurück zum Zitat C.W. Thompson, Structure evolution during Processing of polycrystalline films. Annu. Rev. Mater. Sci. 30, 159–190 (2000) CrossRef C.W. Thompson, Structure evolution during Processing of polycrystalline films. Annu. Rev. Mater. Sci. 30, 159–190 (2000) CrossRef
140.
Zurück zum Zitat M. Kiuchi, A. Chayahara, Y. Horino, K. Fujii, M. Satou, H.J. Kang, Y.W. Beag, Y. Kimura, R. Shimizu, Preferentially orientated crystal growth in dynamic mixing process—an approach by Monte Carlo simulation. Jap. J. Appl. Phys. 29, 2059–2065 (1990) CrossRef M. Kiuchi, A. Chayahara, Y. Horino, K. Fujii, M. Satou, H.J. Kang, Y.W. Beag, Y. Kimura, R. Shimizu, Preferentially orientated crystal growth in dynamic mixing process—an approach by Monte Carlo simulation. Jap. J. Appl. Phys. 29, 2059–2065 (1990) CrossRef
141.
Zurück zum Zitat R.T. Brewer, H.A. Atwater, Rapid biaxial texture development during nucleation of MgO thin films during ion beam-assisted deposition. Appl. Phys. Lett. 80, 3388–3390 (2002) CrossRef R.T. Brewer, H.A. Atwater, Rapid biaxial texture development during nucleation of MgO thin films during ion beam-assisted deposition. Appl. Phys. Lett. 80, 3388–3390 (2002) CrossRef
142.
Zurück zum Zitat R.M. Bradley, J.M.E. Harper, D.A. Smith, Theory of Thin Film orientation by ion bombardment during deposition. J. Appl. Phys. 60, 4160–4164 (1986) CrossRef R.M. Bradley, J.M.E. Harper, D.A. Smith, Theory of Thin Film orientation by ion bombardment during deposition. J. Appl. Phys. 60, 4160–4164 (1986) CrossRef
143.
Zurück zum Zitat B.R. Appelton, G. Foti, Channeling, in Ion Beam Handbook for Material Analysis. ed. by J.W. Mayer, E. Rimini, (Academic Press, New York, 1977) B.R. Appelton, G. Foti, Channeling, in Ion Beam Handbook for Material Analysis. ed. by J.W. Mayer, E. Rimini, (Academic Press, New York, 1977)
144.
Zurück zum Zitat L. Dong, D.J. Srolovitz, Texture development mechanism in ion beam-assisted deposition. J. Appl. Phys. 84, 5261–5269 (1998) CrossRef L. Dong, D.J. Srolovitz, Texture development mechanism in ion beam-assisted deposition. J. Appl. Phys. 84, 5261–5269 (1998) CrossRef
145.
Zurück zum Zitat G. Knuyt, C. Quaeyhaegens, J. D’Heans, L.M. Stals, A quantitative model for the evolution from random orientation to unique texture in PVD thin film formation. Thin Solid Films 258, 159–169 (1995) G. Knuyt, C. Quaeyhaegens, J. D’Heans, L.M. Stals, A quantitative model for the evolution from random orientation to unique texture in PVD thin film formation. Thin Solid Films 258, 159–169 (1995)
146.
Zurück zum Zitat D.S. Rickerby, A.M. Jones, B.A. Bellamy, Internal stress in titanium nitride coatings: modelling of complex stress systems. Surf. Coat Technol. 36, 661–674 (1988) CrossRef D.S. Rickerby, A.M. Jones, B.A. Bellamy, Internal stress in titanium nitride coatings: modelling of complex stress systems. Surf. Coat Technol. 36, 661–674 (1988) CrossRef
147.
Zurück zum Zitat J. Pelleg, L.Z. Zervin, S. Lungo, N. Croitoru, Reactive-sputter-deposited TiN films on glass substrates. Thin Solid Films 197, 117–128 (1991) CrossRef J. Pelleg, L.Z. Zervin, S. Lungo, N. Croitoru, Reactive-sputter-deposited TiN films on glass substrates. Thin Solid Films 197, 117–128 (1991) CrossRef
148.
Zurück zum Zitat U.C. Oh, J.H. Je, Effects of strain energy on the preferred orientation of TiN thin films. J. Appl. Phys. 74, 1692–1696 (1993) CrossRef U.C. Oh, J.H. Je, Effects of strain energy on the preferred orientation of TiN thin films. J. Appl. Phys. 74, 1692–1696 (1993) CrossRef
149.
Zurück zum Zitat H. Windischmann, An intrinsic stress scaling law for polycrystalline thin films prepared by ion beam sputtering, J. Appl. Phys. 62, 1800 –1807 (1987). Intrinsic stress in sputter-deposited thin films. Crit. Rev. Solid State Mat. Sci. 17, 547–596 (1992) H. Windischmann, An intrinsic stress scaling law for polycrystalline thin films prepared by ion beam sputtering, J. Appl. Phys. 62, 1800 1807 (1987). Intrinsic stress in sputter-deposited thin films. Crit. Rev. Solid State Mat. Sci. 17, 547–596 (1992)
150.
Zurück zum Zitat C.A. Davis, A simple model for the formation of compressive stress in thin films by ion bombardment. Thin Solid Films 226, 30–34 (1993) CrossRef C.A. Davis, A simple model for the formation of compressive stress in thin films by ion bombardment. Thin Solid Films 226, 30–34 (1993) CrossRef
151.
Zurück zum Zitat M.F. Doerner, W.D. Nix, Stress and deformation processes in thin films on substrates, CRC Crit. Rev. Solid St. Mater. Sci. 14, 225–268 (1988) M.F. Doerner, W.D. Nix, Stress and deformation processes in thin films on substrates, CRC Crit. Rev. Solid St. Mater. Sci. 14, 225–268 (1988)
152.
Zurück zum Zitat J.F. Nye, Physical Properties of Crystals (University Oxford Press, Oxford, 1957) J.F. Nye, Physical Properties of Crystals (University Oxford Press, Oxford, 1957)
153.
Zurück zum Zitat G. Abadias, Y.Y. Tse, Diffraction stress analysis in fiber-textured TiN thin films grown by ion beam sputtering: application to (001) and mixed (001)+(111) texture. J. Appl. Phys. 95, 2414–2428 (2004) CrossRef G. Abadias, Y.Y. Tse, Diffraction stress analysis in fiber-textured TiN thin films grown by ion beam sputtering: application to (001) and mixed (001)+(111) texture. J. Appl. Phys. 95, 2414–2428 (2004) CrossRef
154.
Zurück zum Zitat V. Valvoda, J. Musil, X-ray analysis of strain in titanium nitride layers. Thin Solid Films 149, 49–60 (1989) CrossRef V. Valvoda, J. Musil, X-ray analysis of strain in titanium nitride layers. Thin Solid Films 149, 49–60 (1989) CrossRef
155.
Zurück zum Zitat J.P. Zhao, X. Wang, Z.Y. Chen, S.Q. Yang, T.S. Shi, X.H. Liu, Overall energy model for preferred growth of TiN films during filtered arc deposition. J. Phys. D: Appl. Phys. 30, 5–12 (1997) CrossRef J.P. Zhao, X. Wang, Z.Y. Chen, S.Q. Yang, T.S. Shi, X.H. Liu, Overall energy model for preferred growth of TiN films during filtered arc deposition. J. Phys. D: Appl. Phys. 30, 5–12 (1997) CrossRef
156.
Zurück zum Zitat D.R. McKenzie, Y. Yin, W.D. McFall, N.H. Hoang, The orientation dependence of the elastic strain energy in cubic crystals and its application to the preferred orientation in titanium nitride thin films. J. Phys.: Condens. Matter 8, 5883–5890 (1996) D.R. McKenzie, Y. Yin, W.D. McFall, N.H. Hoang, The orientation dependence of the elastic strain energy in cubic crystals and its application to the preferred orientation in titanium nitride thin films. J. Phys.: Condens. Matter 8, 5883–5890 (1996)
157.
Zurück zum Zitat S. Mahieu, P. Ghekiere, D. Depla, R.D. Gryse, Biaxial alignment in sputter deposited thin films, Thin Solid Films 515, 1229–1249 (2006). S. Mahieu, D. Depla, Reactive sputter deposition of TiN layers: modelling the growth by characterization of particle fluxes towards the substrate. J. Phys. D: Appl. Phys. 42, 053002 (2009) S. Mahieu, P. Ghekiere, D. Depla, R.D. Gryse, Biaxial alignment in sputter deposited thin films, Thin Solid Films 515, 1229–1249 (2006). S. Mahieu, D. Depla, Reactive sputter deposition of TiN layers: modelling the growth by characterization of particle fluxes towards the substrate. J. Phys. D: Appl. Phys. 42, 053002 (2009)
158.
Zurück zum Zitat J.D. Targove, H.A. Macleod, Verification of momentum transfer as the dominant densifying mechanism in ion-assisted deposition. Appl. Optics 27, 3779–3781 (1988) CrossRef J.D. Targove, H.A. Macleod, Verification of momentum transfer as the dominant densifying mechanism in ion-assisted deposition. Appl. Optics 27, 3779–3781 (1988) CrossRef
159.
Zurück zum Zitat D.M. Mattox, G.J. Kominiak, Structure modification by ion bombardment during deposition. J. Vac. Sci. Technol. 9, 528–532 (1972) CrossRef D.M. Mattox, G.J. Kominiak, Structure modification by ion bombardment during deposition. J. Vac. Sci. Technol. 9, 528–532 (1972) CrossRef
160.
Zurück zum Zitat P.J. Martin, R.P. Netterfield, W.G. Sainty, Modification of the optical and structural properties of dielectric ZrO 2 films by ion-assisted deposition. J. Appl. Phys. 55, 235–241 (1984) CrossRef P.J. Martin, R.P. Netterfield, W.G. Sainty, Modification of the optical and structural properties of dielectric ZrO 2 films by ion-assisted deposition. J. Appl. Phys. 55, 235–241 (1984) CrossRef
161.
Zurück zum Zitat K.H. Guenther, B. Loo, D. Bruns, J. Edgell, D. Widham, K.-H. Müller, Microstructure analysis of thin films deposited by reactive evaporation and reactive ion-plating, Proc. SPIE 1019, 73–83 (1988), see also J. Vac. Sci. Technol. A 7, 1436–1445 (1989) K.H. Guenther, B. Loo, D. Bruns, J. Edgell, D. Widham, K.-H. Müller, Microstructure analysis of thin films deposited by reactive evaporation and reactive ion-plating, Proc. SPIE 1019, 73–83 (1988), see also J. Vac. Sci. Technol. A 7, 1436–1445 (1989)
162.
Zurück zum Zitat H.-P. Kaukonen, R.M. Nieminen, Moleclar-dynamics simulation of the growth of diamond.like films by energetic carbon-atom beams. Phys. Rev. Lett. 68, 620–622 (1992) H.-P. Kaukonen, R.M. Nieminen, Moleclar-dynamics simulation of the growth of diamond.like films by energetic carbon-atom beams. Phys. Rev. Lett. 68, 620–622 (1992)
163.
Zurück zum Zitat K.-H. Müller, Modelling ion-assisted deposition of CeO 2 films. Appl. Phys. A 40, 209–213 (1986) CrossRef K.-H. Müller, Modelling ion-assisted deposition of CeO 2 films. Appl. Phys. A 40, 209–213 (1986) CrossRef
164.
Zurück zum Zitat K.-H. Müller, Ion beam-induced epitaxial vapour-phase growth: A molecular-dynamics study. Phys. Rev. B 35, 7906–7913 (1987) CrossRef K.-H. Müller, Ion beam-induced epitaxial vapour-phase growth: A molecular-dynamics study. Phys. Rev. B 35, 7906–7913 (1987) CrossRef
165.
Zurück zum Zitat G.I. Grigorov, I.N. Martev, J.-P. Langeron, J.-L. Vignes, A choice of the optimum density of ion bombardment by ion-assisted physical vapor deposition of films. Thin Solid Films 161, 249–256 (1988) CrossRef G.I. Grigorov, I.N. Martev, J.-P. Langeron, J.-L. Vignes, A choice of the optimum density of ion bombardment by ion-assisted physical vapor deposition of films. Thin Solid Films 161, 249–256 (1988) CrossRef
166.
Zurück zum Zitat G.I. Grigorov, K.G. Grigorov, R. Sporken, R. Caudano, Ion-induced densification of pvd films–a choice of the optimum density of ion bombardment. Appl. Phys. A 63, 399–401 (1996) CrossRef G.I. Grigorov, K.G. Grigorov, R. Sporken, R. Caudano, Ion-induced densification of pvd films–a choice of the optimum density of ion bombardment. Appl. Phys. A 63, 399–401 (1996) CrossRef
167.
Zurück zum Zitat G. Carter, Peening ion-assisted thin-film deposition: a generalized model. J. Phys. D: Appl. Phys. 27, 1046–1055 (1994) CrossRef G. Carter, Peening ion-assisted thin-film deposition: a generalized model. J. Phys. D: Appl. Phys. 27, 1046–1055 (1994) CrossRef
168.
Zurück zum Zitat I.C. Noyan, J.B. Cohen, Residual stress: Measurement by Diffraction and Interpretation (Springer, Berlin, 1987) CrossRef I.C. Noyan, J.B. Cohen, Residual stress: Measurement by Diffraction and Interpretation (Springer, Berlin, 1987) CrossRef
169.
Zurück zum Zitat C.A. Volkert, Stress and plastic flow in silicon during amorphization by ion bombardment. J. Appl. Phys. 70, 3521–3527 (1991) CrossRef C.A. Volkert, Stress and plastic flow in silicon during amorphization by ion bombardment. J. Appl. Phys. 70, 3521–3527 (1991) CrossRef
170.
Zurück zum Zitat M. Zeitler, S. Sienz, B. Rauschenbach, Study of stress evolution of boron nitride films prepared by ion-assisted deposition. J. Vac. Sci. Technol. A 17, 597–602 (1999) CrossRef M. Zeitler, S. Sienz, B. Rauschenbach, Study of stress evolution of boron nitride films prepared by ion-assisted deposition. J. Vac. Sci. Technol. A 17, 597–602 (1999) CrossRef
171.
Zurück zum Zitat G.G. Stoney, The tension of metallic films deposited by electrolysis. Proc. Royal Soc. London, Ser. A 82, 172–175 (1909) G.G. Stoney, The tension of metallic films deposited by electrolysis. Proc. Royal Soc. London, Ser. A 82, 172–175 (1909)
172.
Zurück zum Zitat L.B. Freund, S. Suresh, Thin Film Materials: Stress, Defect Formation and Surface Evolution (Cambridge University Press, Cambridge, 2003) L.B. Freund, S. Suresh, Thin Film Materials: Stress, Defect Formation and Surface Evolution (Cambridge University Press, Cambridge, 2003)
173.
Zurück zum Zitat J. Keckes, J.W. Gerlach, R. Averbeck, H. Riechert, S. Bader, B. Hahn, H.-J. Lugauer, A. Lell, V. Härle, A. Wenzel, B. Rauschenbach, Temperature dependence of stresses in GaN thin films grown on (0001) sapphire: Modeling of thermal stresses. App. Phys. Lett. 79, 4307–4309 (2001) CrossRef J. Keckes, J.W. Gerlach, R. Averbeck, H. Riechert, S. Bader, B. Hahn, H.-J. Lugauer, A. Lell, V. Härle, A. Wenzel, B. Rauschenbach, Temperature dependence of stresses in GaN thin films grown on (0001) sapphire: Modeling of thermal stresses. App. Phys. Lett. 79, 4307–4309 (2001) CrossRef
174.
Zurück zum Zitat H. Trinkaus, A.I. Ryazanov, Viscoelastic model for the plastic flow of amorphous solids under energetic ion bombardment. Phys. Rev. Lett. 74, 5072–5074 (1995) CrossRef H. Trinkaus, A.I. Ryazanov, Viscoelastic model for the plastic flow of amorphous solids under energetic ion bombardment. Phys. Rev. Lett. 74, 5072–5074 (1995) CrossRef
175.
Zurück zum Zitat K. Dahmen, M. Giesen, J. Ikonomov, K. Starbova, H. Ibach, Steady-state surface stress induced in noble gas sputtering. Thin Solid Films 428, 6–10 (2003) CrossRef K. Dahmen, M. Giesen, J. Ikonomov, K. Starbova, H. Ibach, Steady-state surface stress induced in noble gas sputtering. Thin Solid Films 428, 6–10 (2003) CrossRef
176.
Zurück zum Zitat N. Kalyanasundaram, M.C. Moore, J.B. Freund, H.T. Johnson, Stress evolution due to medium-energy ion bombardment of silicon, Acta Mater. 54, 483 –491 (2006). N. Kalyanasundaram, M. Wood, J.B. Freund, H.T. Johnson, Stress evolution to steady state in ion bombardment of silicon. Mechan. Res. Comm. 15, 50–56 (2008) N. Kalyanasundaram, M.C. Moore, J.B. Freund, H.T. Johnson, Stress evolution due to medium-energy ion bombardment of silicon, Acta Mater. 54, 483 491 (2006). N. Kalyanasundaram, M. Wood, J.B. Freund, H.T. Johnson, Stress evolution to steady state in ion bombardment of silicon. Mechan. Res. Comm. 15, 50–56 (2008)
177.
Zurück zum Zitat W.L. Chan, E. Chason, C. Iamsumang, Surface stress induced in Cu foils during and after low energy ion bombardment, Nucl.Instr. Meth.in Phys. Res. B 257, 428–432 (2007). W.L. Chan, E. Chason, Stress evolution and defect diffusion in Cu during low energy ion irradiation: experiments and modeling. J. Vac. Sci. Technol. A 26, 44–51 (2008) W.L. Chan, E. Chason, C. Iamsumang, Surface stress induced in Cu foils during and after low energy ion bombardment, Nucl.Instr. Meth.in Phys. Res. B 257, 428–432 (2007). W.L. Chan, E. Chason, Stress evolution and defect diffusion in Cu during low energy ion irradiation: experiments and modeling. J. Vac. Sci. Technol. A 26, 44–51 (2008)
178.
Zurück zum Zitat W.L. Chan, K. Zhao, N. Vo, Y. Ashkenazy, D.G. Cahill, R.S. Averback, Stress evolution in platinum thin films during low-energy ion irradiation. Phys. Rev. B 77, 205405 (2008) W.L. Chan, K. Zhao, N. Vo, Y. Ashkenazy, D.G. Cahill, R.S. Averback, Stress evolution in platinum thin films during low-energy ion irradiation. Phys. Rev. B 77, 205405 (2008)
179.
Zurück zum Zitat T. Edler, S.G. Mayr, Mechanisms of stress generation during bombardment of Ge with keV ions: experiments and molecular dynamics simulations. New J. Phys. 9, 325 (2007) CrossRef T. Edler, S.G. Mayr, Mechanisms of stress generation during bombardment of Ge with keV ions: experiments and molecular dynamics simulations. New J. Phys. 9, 325 (2007) CrossRef
180.
Zurück zum Zitat Y. Ishii, C.S. Madi, M.J. Aziz, E. Chason, Stress evolution in Si during low energy ion bombardment. J. Mater. Res. 29, 2942–2948 (2014) CrossRef Y. Ishii, C.S. Madi, M.J. Aziz, E. Chason, Stress evolution in Si during low energy ion bombardment. J. Mater. Res. 29, 2942–2948 (2014) CrossRef
181.
Zurück zum Zitat F.M. d’Heurle, Aluminium films deposited by rf sputtering. Metall. Mater. Trans. 1, 725–732 (1970) F.M. d’Heurle, Aluminium films deposited by rf sputtering. Metall. Mater. Trans. 1, 725–732 (1970)
182.
Zurück zum Zitat J.A. Thornton, D.W. Hoffman, Stress-related effects in thin films. Thin Solid Films 171, 5–31 (1989) CrossRef J.A. Thornton, D.W. Hoffman, Stress-related effects in thin films. Thin Solid Films 171, 5–31 (1989) CrossRef
183.
Zurück zum Zitat D.W. Hoffman, J.A. Thornton, Compressive stress and inert gas in Mo films sputtered from a cylindrical-post magnetron with Ne, Ar, Kr, and Xe. J. Vac. Sci. Technol. 17, 380–383 (1980) CrossRef D.W. Hoffman, J.A. Thornton, Compressive stress and inert gas in Mo films sputtered from a cylindrical-post magnetron with Ne, Ar, Kr, and Xe. J. Vac. Sci. Technol. 17, 380–383 (1980) CrossRef
184.
Zurück zum Zitat N. Kuratani, O. Imai, A. Ebe, S. Nishiyama, K. Ogata, Internal stress in thin films prepared by ion beam and vapor deposition. Surf. Sci. Technol. 66, 310–312 (1994) N. Kuratani, O. Imai, A. Ebe, S. Nishiyama, K. Ogata, Internal stress in thin films prepared by ion beam and vapor deposition. Surf. Sci. Technol. 66, 310–312 (1994)
185.
Zurück zum Zitat M. Zeitler, Synthese and Spannungsanalyse von Bornitridschichten, hergestellt mittels ionengestützter Deposition. Disseration, University of Augsburg (1999) M. Zeitler, Synthese and Spannungsanalyse von Bornitridschichten, hergestellt mittels ionengestützter Deposition. Disseration, University of Augsburg (1999)
186.
Zurück zum Zitat V. Dietz, P. Ehrhart, D. Guggi, H.-G. Haubold, W. Jäger, M. Prieler, W. Schilling, Influence of ion bombardment during deposition on mustructure of evaporated aluminum films. Nucl. Inst. Meth. in Phys. Res. B 59(60), 284–287 (1991) CrossRef V. Dietz, P. Ehrhart, D. Guggi, H.-G. Haubold, W. Jäger, M. Prieler, W. Schilling, Influence of ion bombardment during deposition on mustructure of evaporated aluminum films. Nucl. Inst. Meth. in Phys. Res. B 59(60), 284–287 (1991) CrossRef
187.
Zurück zum Zitat W. Hoffman, M.R. Gaerttner, Modification of evaporated chromium by concurrent ion bombardment. J. Vac. Sci. Technol. 17, 425–428 (1980) CrossRef W. Hoffman, M.R. Gaerttner, Modification of evaporated chromium by concurrent ion bombardment. J. Vac. Sci. Technol. 17, 425–428 (1980) CrossRef
188.
Zurück zum Zitat Y. Pauleau, Generation and evolution of residual stress in physical vapour-deposited thin films. Vacuum 61, 175–181 (2001) CrossRef Y. Pauleau, Generation and evolution of residual stress in physical vapour-deposited thin films. Vacuum 61, 175–181 (2001) CrossRef
189.
Zurück zum Zitat R. Abermann, R. Kramer, J. Mäser, Structure and internal stress in ultra-thin silver films deposited on MgF 2 and SiO. Thin Solid Films 52, 215–229 (1978) CrossRef R. Abermann, R. Kramer, J. Mäser, Structure and internal stress in ultra-thin silver films deposited on MgF 2 and SiO. Thin Solid Films 52, 215–229 (1978) CrossRef
190.
Zurück zum Zitat R.W. Hoffman, Stress in thin films: The relevance of grain boundaries and impurities. Thin Solid Films 34, 185–190 (1976) CrossRef R.W. Hoffman, Stress in thin films: The relevance of grain boundaries and impurities. Thin Solid Films 34, 185–190 (1976) CrossRef
191.
Zurück zum Zitat W.D. Nix, B.M. Clemens, Crystallite coalescence: A mechanism for intrinsic tensile stresses in thin films. J. Mater Res. 14, 3467–3473 (1999) CrossRef W.D. Nix, B.M. Clemens, Crystallite coalescence: A mechanism for intrinsic tensile stresses in thin films. J. Mater Res. 14, 3467–3473 (1999) CrossRef
192.
Zurück zum Zitat G.K. Wolf, Modification of chemical properties by ion beam-assisted deposition. Nucl. Instr. Meth. In Phys. Res. B 46, 369–378 (1990) CrossRef G.K. Wolf, Modification of chemical properties by ion beam-assisted deposition. Nucl. Instr. Meth. In Phys. Res. B 46, 369–378 (1990) CrossRef
193.
Zurück zum Zitat E.H. Hirsch, I.K. Varga, Thin film annealing by ion bombardment. Thin Solid Films 69, 99–105 (1980) CrossRef E.H. Hirsch, I.K. Varga, Thin film annealing by ion bombardment. Thin Solid Films 69, 99–105 (1980) CrossRef
194.
Zurück zum Zitat D.R. Brighton, G.K. Hubler, Binary collision cascade prediction of critical ion-to-atom arrival ratio in the production of thin films with reduced intrinsic stress. Nucl. Instr. Meth. in Phys. Res. B 28, 527–533 (1987) CrossRef D.R. Brighton, G.K. Hubler, Binary collision cascade prediction of critical ion-to-atom arrival ratio in the production of thin films with reduced intrinsic stress. Nucl. Instr. Meth. in Phys. Res. B 28, 527–533 (1987) CrossRef
195.
Zurück zum Zitat W.D. Wilson, L.G. Haggmark, J.P. Biersack, Calculations of nuclear stopping, range, and straggling in the low-energy region. Phys. Rev. B 15, 2458–2468 (1977) CrossRef W.D. Wilson, L.G. Haggmark, J.P. Biersack, Calculations of nuclear stopping, range, and straggling in the low-energy region. Phys. Rev. B 15, 2458–2468 (1977) CrossRef
196.
Zurück zum Zitat E. Chason, M. Karlson, J.J. Colin, D. Magnfält, K. Sarakinos, G. Abdadias, A kinetic model for stress generation in thin films grown from energetic vapor fluxes. J. Appl. Phys. 119, 145307 (2016) E. Chason, M. Karlson, J.J. Colin, D. Magnfält, K. Sarakinos, G. Abdadias, A kinetic model for stress generation in thin films grown from energetic vapor fluxes. J. Appl. Phys. 119, 145307 (2016)
197.
Zurück zum Zitat J. Robertson, Deposition mechanisms for promoting sp 3 bonding in diamond-like carbon. Diamond Rel. Mater. 2, 984–989 (1993) CrossRef J. Robertson, Deposition mechanisms for promoting sp 3 bonding in diamond-like carbon. Diamond Rel. Mater. 2, 984–989 (1993) CrossRef
198.
Zurück zum Zitat Y. Lifshitz, S.R. Kasi, J.W. Rabalais, Subplantation model for film growth from hyperthermal species. Phys. Rev. B 41, 10468–10480 (1990) and Subplantation model for film growth from hyperthermal Species: application to diamond. Phys. Rev. Lett. 62, 1290–1293 (1989) Y. Lifshitz, S.R. Kasi, J.W. Rabalais, Subplantation model for film growth from hyperthermal species. Phys. Rev. B 41, 10468–10480 (1990) and Subplantation model for film growth from hyperthermal Species: application to diamond. Phys. Rev. Lett. 62, 1290–1293 (1989)
199.
Zurück zum Zitat F. Seitz, S. Koehler, Displacement of Atoms during Irradiation, in Solid State Physics, ed. by F. Seitz, D. Turnbull, Vol. 2, (Academic Press, New York, 1956), pp. 307–442 F. Seitz, S. Koehler, Displacement of Atoms during Irradiation, in Solid State Physics, ed. by F. Seitz, D. Turnbull, Vol. 2, (Academic Press, New York, 1956), pp. 307–442
200.
Zurück zum Zitat L. Dumas, E. Quesnel, J.Y. Robic, Y. Pauleau, Characterization of magnesium fluoride thin films produced by argon ion beam-assisted deposition. Thin Solid Films 382, 61–68 (2001) CrossRef L. Dumas, E. Quesnel, J.Y. Robic, Y. Pauleau, Characterization of magnesium fluoride thin films produced by argon ion beam-assisted deposition. Thin Solid Films 382, 61–68 (2001) CrossRef
201.
Zurück zum Zitat K.J. Boyd, D. Marton, J.W. Rabalais, S. Uhlmann, T. Frauenheim, Semiquantitative subplantation model for low energy ion interactions with surfaces. I. Noble gas ion-surface interactions. J. Vac. Sci. Technol. A 16, 444–462 (1998) K.J. Boyd, D. Marton, J.W. Rabalais, S. Uhlmann, T. Frauenheim, Semiquantitative subplantation model for low energy ion interactions with surfaces. I. Noble gas ion-surface interactions. J. Vac. Sci. Technol. A 16, 444–462 (1998)
202.
Zurück zum Zitat G. Knuyt, W. Lauwerens, L.M. Stals, A unified theoretical model for tensile and compressive residual film stress. Thin Solid Films 370, 232–237 (2000) CrossRef G. Knuyt, W. Lauwerens, L.M. Stals, A unified theoretical model for tensile and compressive residual film stress. Thin Solid Films 370, 232–237 (2000) CrossRef
203.
Zurück zum Zitat V.l. Popov, R. Pohrt, Q. Li, Strength of adhesive contacts: Influence of contact geometry and material gradients. Friction 5, 308–325 (2017) V.l. Popov, R. Pohrt, Q. Li, Strength of adhesive contacts: Influence of contact geometry and material gradients. Friction 5, 308–325 (2017)
204.
Zurück zum Zitat G.K. Wolf, M. Barth, W. Ensinger, Ion beam-assisted deposition for metal finishing. Nucl. Instr. Meth. in Phys. Res. B 37(38), 682–687 (1989) CrossRef G.K. Wolf, M. Barth, W. Ensinger, Ion beam-assisted deposition for metal finishing. Nucl. Instr. Meth. in Phys. Res. B 37(38), 682–687 (1989) CrossRef
205.
Zurück zum Zitat T.N. Kim, Q.L. Feng, Z.S. Luo, F.Z. Cui, J.O. Kim, Highly adhesive hydroxyapatite coatings on alumina substrates prepared by ion beam-assisted deposition. Surf. Coat. Technol. 99, 20–23 (1998) CrossRef T.N. Kim, Q.L. Feng, Z.S. Luo, F.Z. Cui, J.O. Kim, Highly adhesive hydroxyapatite coatings on alumina substrates prepared by ion beam-assisted deposition. Surf. Coat. Technol. 99, 20–23 (1998) CrossRef
206.
Zurück zum Zitat J.-M. Choi, H.-E. Kim, I.-S. Lee, Ion beam-assisted deposition (IBAD) of hydroxyapatite coating layer on Ti-based metal substrate. Biomaterials 21, 469–473 (2000) CrossRef J.-M. Choi, H.-E. Kim, I.-S. Lee, Ion beam-assisted deposition (IBAD) of hydroxyapatite coating layer on Ti-based metal substrate. Biomaterials 21, 469–473 (2000) CrossRef
207.
Zurück zum Zitat J. Zhu, Y. Hu, M. Xu, W. Yang, L. Fu, D Li, L. Zhou, Enhancement of the adhesive strength between Ag films and Mo substrate by Ag implanted via ion beam-assisted deposition. Materials 11, 762 (2018) J. Zhu, Y. Hu, M. Xu, W. Yang, L. Fu, D Li, L. Zhou, Enhancement of the adhesive strength between Ag films and Mo substrate by Ag implanted via ion beam-assisted deposition. Materials 11, 762 (2018)
208.
Zurück zum Zitat L.-H. Tian, B. Tang, D.-X. Liuc, X.-D. Zhua, J.-W. He, Interfacial reactions duringIBAD and their effects on the adhesion of Cr–N coatings on steel. Surf. Coat. Technol. 191, 149–154 (2005) CrossRef L.-H. Tian, B. Tang, D.-X. Liuc, X.-D. Zhua, J.-W. He, Interfacial reactions duringIBAD and their effects on the adhesion of Cr–N coatings on steel. Surf. Coat. Technol. 191, 149–154 (2005) CrossRef
209.
Zurück zum Zitat A.J. Kellock, J.E.E. Baglin, T.T. Bardin, J.G. Pronko, Adhesion improvement of Au on GaAs using ion beam-assisted deposition. Nucl. Instr. Meth in Phys. Res. B 59(60), 249–253 (1991) CrossRef A.J. Kellock, J.E.E. Baglin, T.T. Bardin, J.G. Pronko, Adhesion improvement of Au on GaAs using ion beam-assisted deposition. Nucl. Instr. Meth in Phys. Res. B 59(60), 249–253 (1991) CrossRef
210.
Zurück zum Zitat Y.-T. Cheng, Thermodynamic and fractal geometric aspects of ion-solid interactions. Mater. Sci. Rep. 5, 54–97 (1990) CrossRef Y.-T. Cheng, Thermodynamic and fractal geometric aspects of ion-solid interactions. Mater. Sci. Rep. 5, 54–97 (1990) CrossRef
211.
Zurück zum Zitat W. Bolse, Ion beam-induced atomic transport through bi-layer interfaces of low- and medium-Z metals and their nitrides. Mater. Sci. Engng. R 12, 53–122 (1994) CrossRef W. Bolse, Ion beam-induced atomic transport through bi-layer interfaces of low- and medium-Z metals and their nitrides. Mater. Sci. Engng. R 12, 53–122 (1994) CrossRef
212.
Zurück zum Zitat B. Rauschenbach, M. Posselt, R. Grötschel, E. Brecht, G. Linker, O. Meyer, Ion mixing of Cu/Ti and Cu/Fe bilayers. Nucl. Instr. Meth in Phys. Res. B 69, 277 –280 (1992). B. Rauschenbach, W. Erfurth, G. Linker, O. Meyer, Ion beam mixing of Cu/Ti bilayers. Nucl. Instr. Meth in Phys. Res. B 68, 438–442 (1992) B. Rauschenbach, M. Posselt, R. Grötschel, E. Brecht, G. Linker, O. Meyer, Ion mixing of Cu/Ti and Cu/Fe bilayers. Nucl. Instr. Meth in Phys. Res. B 69, 277 280 (1992). B. Rauschenbach, W. Erfurth, G. Linker, O. Meyer, Ion beam mixing of Cu/Ti bilayers. Nucl. Instr. Meth in Phys. Res. B 68, 438–442 (1992)
213.
Zurück zum Zitat P. Sigmund, A. Gras-Marti, Theoretical aspects of atomic mixing by ion beams. Nucl. Instr. Meth. 182(183), 25–41 (1981) CrossRef P. Sigmund, A. Gras-Marti, Theoretical aspects of atomic mixing by ion beams. Nucl. Instr. Meth. 182(183), 25–41 (1981) CrossRef
214.
Zurück zum Zitat S. Aisenberg, R. Chabot, Ion beam deposition of thin films of diamondlike carbon. J. Appl. Phys. 42, 2953–2958 (1972) CrossRef S. Aisenberg, R. Chabot, Ion beam deposition of thin films of diamondlike carbon. J. Appl. Phys. 42, 2953–2958 (1972) CrossRef
215.
Zurück zum Zitat C. Weissmantel, Reactive film preparation. Thin Solid Films 31, 11–18 (1976) CrossRef C. Weissmantel, Reactive film preparation. Thin Solid Films 31, 11–18 (1976) CrossRef
216.
Zurück zum Zitat P.B. Mirkarimi, K.F. McCarty, D.L. Medlin, Review of advances in cubic boron nitride film synthesis. Mater. Sci. Engng. R 21, 47–100 (1997) CrossRef P.B. Mirkarimi, K.F. McCarty, D.L. Medlin, Review of advances in cubic boron nitride film synthesis. Mater. Sci. Engng. R 21, 47–100 (1997) CrossRef
217.
Zurück zum Zitat W. Kulisch, S. Ulrich, Parameter spaces for nucleation and the subsequent growth of cubic boron nitride films. Thin Solid Films 423, 183–195 (2003) CrossRef W. Kulisch, S. Ulrich, Parameter spaces for nucleation and the subsequent growth of cubic boron nitride films. Thin Solid Films 423, 183–195 (2003) CrossRef
218.
Zurück zum Zitat D.J. Kester, K.S. Ailey, R.F. Davis, Deposition and characterization of boron nitride thin films. Diamond Rel. Mater. 3, 332–336 (1994) CrossRef D.J. Kester, K.S. Ailey, R.F. Davis, Deposition and characterization of boron nitride thin films. Diamond Rel. Mater. 3, 332–336 (1994) CrossRef
219.
Zurück zum Zitat J. Thomas, N.E. Weston, T.E. O’Connor, Turbostratic boron nitride, thermal transformation to order-layer-lattice boron nitride. J. Am. Chem. Soc. 84, 4619–4622 (1963) CrossRef J. Thomas, N.E. Weston, T.E. O’Connor, Turbostratic boron nitride, thermal transformation to order-layer-lattice boron nitride. J. Am. Chem. Soc. 84, 4619–4622 (1963) CrossRef
220.
Zurück zum Zitat D.V. Shtansky, O. Tsuda, Y. Ikuhara, T. Yoshida, Crystallography and structural evolution of cubic boron nitride films during bias sputter deposition. Acta mater. 48, 3745–3759 (2000) CrossRef D.V. Shtansky, O. Tsuda, Y. Ikuhara, T. Yoshida, Crystallography and structural evolution of cubic boron nitride films during bias sputter deposition. Acta mater. 48, 3745–3759 (2000) CrossRef
221.
Zurück zum Zitat D. Bouchier, G. Sené, M.A. Djouadi, P. Möller, Effect of noble gas ions on the synthesis of c-BN by ion beam-assisted deposition. Nucl. Instrum. Meth. in Phys Res. B 89, 369–372 (1994) CrossRef D. Bouchier, G. Sené, M.A. Djouadi, P. Möller, Effect of noble gas ions on the synthesis of c-BN by ion beam-assisted deposition. Nucl. Instrum. Meth. in Phys Res. B 89, 369–372 (1994) CrossRef
222.
Zurück zum Zitat T.A. Friedmann, P.B. Mirkarimi, D.L. Medlin, K.F- McCarty, E.J. Klaus, D.R. Boehme, H.A. Johnsen, M.J. Mills, D.K. Ottesen, J.C. Barbour, Ion-assisted pulsed laser deposition of cubic boron nitride films. J. Appl. Phys. 76, 3088–3101 (1994) T.A. Friedmann, P.B. Mirkarimi, D.L. Medlin, K.F- McCarty, E.J. Klaus, D.R. Boehme, H.A. Johnsen, M.J. Mills, D.K. Ottesen, J.C. Barbour, Ion-assisted pulsed laser deposition of cubic boron nitride films. J. Appl. Phys. 76, 3088–3101 (1994)
223.
Zurück zum Zitat S. Reinke, M. Kuhr, W. Kulisch, R. Kassing, Recent results in boron nitride deposition in light of sputter model. Diamond Rel. Mater. 4, 272–283 (1995) CrossRef S. Reinke, M. Kuhr, W. Kulisch, R. Kassing, Recent results in boron nitride deposition in light of sputter model. Diamond Rel. Mater. 4, 272–283 (1995) CrossRef
224.
Zurück zum Zitat H. Hofsäss, H. Feldermann, R. Merk, M. Sebastian, C. Ronning, Cylindrical spike model for the formation of diamond like thin films by ion deposition. Appl. Phys. A 66, 153–181 (1998) CrossRef H. Hofsäss, H. Feldermann, R. Merk, M. Sebastian, C. Ronning, Cylindrical spike model for the formation of diamond like thin films by ion deposition. Appl. Phys. A 66, 153–181 (1998) CrossRef
225.
Zurück zum Zitat G. H. Vineyard, Thermal spikes and activated processes. Rad. Effects Defects in Solids 29, 245–248 (1976) G. H. Vineyard, Thermal spikes and activated processes. Rad. Effects Defects in Solids 29, 245–248 (1976)
226.
Zurück zum Zitat S. Reinke, M. Kuhr, W. Kulisch, Mechanism in ion induced c-BN growth. Diamond Rel. Mater. 3, 342–345 (1994) CrossRef S. Reinke, M. Kuhr, W. Kulisch, Mechanism in ion induced c-BN growth. Diamond Rel. Mater. 3, 342–345 (1994) CrossRef
227.
Zurück zum Zitat D.R. McKenzie, W.D. McFall, W.G. Sainty, C.A. Davies, R.E. Collins, Compressive stress induced formation of cubic boron nitride. Diamond Rel. Mater. 2, 970–976 (1993) CrossRef D.R. McKenzie, W.D. McFall, W.G. Sainty, C.A. Davies, R.E. Collins, Compressive stress induced formation of cubic boron nitride. Diamond Rel. Mater. 2, 970–976 (1993) CrossRef
228.
Zurück zum Zitat P.B. Mirkarimi, K.F. McCarty, D.L. Medlin, W.G. Wolfer, T.A. Friedmann, R.J. Klaus, G.F. Cardinale, D.G. Howitt, On the role of ions in the formation of cubic boron nitride films by ion-assisted deposition. J. Mater. Res. 9, 2925–2938 (1994) CrossRef P.B. Mirkarimi, K.F. McCarty, D.L. Medlin, W.G. Wolfer, T.A. Friedmann, R.J. Klaus, G.F. Cardinale, D.G. Howitt, On the role of ions in the formation of cubic boron nitride films by ion-assisted deposition. J. Mater. Res. 9, 2925–2938 (1994) CrossRef
229.
Zurück zum Zitat D.J. Kester, R. Messier, Phase control of cubic boron nitride thin films. J. Appl. Phys. 72, 504–513 (1992) CrossRef D.J. Kester, R. Messier, Phase control of cubic boron nitride thin films. J. Appl. Phys. 72, 504–513 (1992) CrossRef
230.
Zurück zum Zitat J. Robertson, The deposition mechanism of diamondlike a-C and a-C:GH. Diamond Rel. Mater. 3, 361–368 (1994) CrossRef J. Robertson, The deposition mechanism of diamondlike a-C and a-C:GH. Diamond Rel. Mater. 3, 361–368 (1994) CrossRef
231.
Zurück zum Zitat D. Marton, K.J. Boyd, I.W. Rabalais, Y. Lifshitz, Semiquantitative subplantation model for low energy ion interactions with surfaces. II. Ion beam deposition of carbon and carbon nitride. J. Vac. Sci. Technol. A. 16, 455–462 (1998) D. Marton, K.J. Boyd, I.W. Rabalais, Y. Lifshitz, Semiquantitative subplantation model for low energy ion interactions with surfaces. II. Ion beam deposition of carbon and carbon nitride. J. Vac. Sci. Technol. A. 16, 455–462 (1998)
232.
Zurück zum Zitat K.J. Boyd, D. Marton, J.W. Rabalais, S. Uhlmann, T. Frauenheim, Semiquantitative subplantation model for low energy ion interactions with surfaces. III. Ion beam homoepitaxy of Si. J. Vac. Sci. Technol. A 16, 463–471 (1998) K.J. Boyd, D. Marton, J.W. Rabalais, S. Uhlmann, T. Frauenheim, Semiquantitative subplantation model for low energy ion interactions with surfaces. III. Ion beam homoepitaxy of Si. J. Vac. Sci. Technol. A 16, 463–471 (1998)
233.
Zurück zum Zitat H.K. Pulker, G. Paesold, E. Ritter, Refractive indices of TiO 2 films produced by reactive evaporation of various titanium-oxygen phases. Appl. Optics 15, 2986–2991 (1976) CrossRef H.K. Pulker, G. Paesold, E. Ritter, Refractive indices of TiO 2 films produced by reactive evaporation of various titanium-oxygen phases. Appl. Optics 15, 2986–2991 (1976) CrossRef
234.
Zurück zum Zitat P.J. Martin, Ion based methods for optical thin film deposition. J. Mater Sci. 21, 1–25 (1986) CrossRef P.J. Martin, Ion based methods for optical thin film deposition. J. Mater Sci. 21, 1–25 (1986) CrossRef
235.
Zurück zum Zitat H.-C. Chen, K.-S. Lee, C.-C. Jaing, C.-C. Lee, Enhancement of the stability of ion-assisted TiO 2 thin films by using re-annealing with different substrate temperatures. Proc. SPIE 7067, 70670O (2008) CrossRef H.-C. Chen, K.-S. Lee, C.-C. Jaing, C.-C. Lee, Enhancement of the stability of ion-assisted TiO 2 thin films by using re-annealing with different substrate temperatures. Proc. SPIE 7067, 70670O (2008) CrossRef
236.
Zurück zum Zitat G. Wang, J.R. Brewer, F. Namavar, R.F. Sabirianov, H. Haider. K. L. Garvin, C.L. Cheung, Structural study of titanium oxide films synthesized by ion beam-assisted deposition. 30, 59–64 (2008) G. Wang, J.R. Brewer, F. Namavar, R.F. Sabirianov, H. Haider. K. L. Garvin, C.L. Cheung, Structural study of titanium oxide films synthesized by ion beam-assisted deposition. 30, 59–64 (2008)
237.
Zurück zum Zitat C.-C. Jaing, H.-C. Chen, C.-C. Lee, Effects of thermal annealing on titanium oxide films prepared by ion-assisted deposition. Opt. Rev. 16, 396–399 (2009) CrossRef C.-C. Jaing, H.-C. Chen, C.-C. Lee, Effects of thermal annealing on titanium oxide films prepared by ion-assisted deposition. Opt. Rev. 16, 396–399 (2009) CrossRef
238.
Zurück zum Zitat C. Yang, H. Fan, Y. Xi, J. Chen, Z. Li, Effects of depositing temperatures on structure and optical properties of TiO 2 film deposited by ion beam assisted electron beam evaporation. Appl. Surf. Sci. 254, 2685–2789 (2008) CrossRef C. Yang, H. Fan, Y. Xi, J. Chen, Z. Li, Effects of depositing temperatures on structure and optical properties of TiO 2 film deposited by ion beam assisted electron beam evaporation. Appl. Surf. Sci. 254, 2685–2789 (2008) CrossRef
239.
Zurück zum Zitat F. Zhang, Z. Zheng, Y. Chen, D. Liu, X. Lu, Study on the effect of ion beam bombardment during deposition on preferred orientation in rutile-type titanium dioxide. J. Appl. Phys. 83, 4101–4105 (1998) CrossRef F. Zhang, Z. Zheng, Y. Chen, D. Liu, X. Lu, Study on the effect of ion beam bombardment during deposition on preferred orientation in rutile-type titanium dioxide. J. Appl. Phys. 83, 4101–4105 (1998) CrossRef
240.
Zurück zum Zitat K. Yokota, Y. Yano, K. Nakamura, M. Ohnishi, F. Miyashita, Effects of oxygen ion beam application on crystalline structures of TiO 2 films deposited on Si wafers by an ion beam-assisted deposition. Nucl. Instr. Meth. B 242, 393–395 (2002) CrossRef K. Yokota, Y. Yano, K. Nakamura, M. Ohnishi, F. Miyashita, Effects of oxygen ion beam application on crystalline structures of TiO 2 films deposited on Si wafers by an ion beam-assisted deposition. Nucl. Instr. Meth. B 242, 393–395 (2002) CrossRef
241.
Zurück zum Zitat I.N. Martev, Oxygen-ion-assisted deposition of TiO films. Vacuum 58, 327–334 (2000) CrossRef I.N. Martev, Oxygen-ion-assisted deposition of TiO films. Vacuum 58, 327–334 (2000) CrossRef
242.
Zurück zum Zitat J.R. McNeil, A.C. Barron, S.R. Wilson, W.C. Herrmann, Ion-assisted deposition of optical thin films: low energy vs high energy bombardment. Appl. Optics 23, 552–559 (1984) CrossRef J.R. McNeil, A.C. Barron, S.R. Wilson, W.C. Herrmann, Ion-assisted deposition of optical thin films: low energy vs high energy bombardment. Appl. Optics 23, 552–559 (1984) CrossRef
243.
Zurück zum Zitat A.M. Ektessabi, Ion beam-assisted sputter deposition of thin oxide films. Surf. Coat. Technol. 68–69, 208–216 (1994) CrossRef A.M. Ektessabi, Ion beam-assisted sputter deposition of thin oxide films. Surf. Coat. Technol. 68–69, 208–216 (1994) CrossRef
244.
Zurück zum Zitat S. Mohan, M.G. Krishan, A review of ion beam-assisted deposition of optical thin films. Vacuum 46, 645–659 (1995) CrossRef S. Mohan, M.G. Krishan, A review of ion beam-assisted deposition of optical thin films. Vacuum 46, 645–659 (1995) CrossRef
245.
Zurück zum Zitat P.J. Martin, H.A. MacLeod, R.P. Netterfield, C.G. Pacey, W.G. Sainty, Ion beam-assisted deposition of thin films. Appl. Optics 22, 178–184 (1983) CrossRef P.J. Martin, H.A. MacLeod, R.P. Netterfield, C.G. Pacey, W.G. Sainty, Ion beam-assisted deposition of thin films. Appl. Optics 22, 178–184 (1983) CrossRef
246.
Zurück zum Zitat Y. Yamada, H. Uyama, T. Murata, H. Nozoye, Low temperature deposition of titanium-oxide films with refractive indices by oxygen-radical beam assisted evaporation combined with ion beams. J. Vac. Sci. Technol. A 19, 2479–2482 (2001) CrossRef Y. Yamada, H. Uyama, T. Murata, H. Nozoye, Low temperature deposition of titanium-oxide films with refractive indices by oxygen-radical beam assisted evaporation combined with ion beams. J. Vac. Sci. Technol. A 19, 2479–2482 (2001) CrossRef
247.
Zurück zum Zitat J.M. Bennett, E. Pelleier, G. Albarnd, J.P. Borgogno, C. Carniglia, R.A. Schmell, T.H. Allen, T. Tuttle-Hart, K.H. Guenther, A. Saxer, Comparison of properties of tirtanium dioxide films prepared by various techniques. Appl. Optics 28, 3303–3317 (1989) CrossRef J.M. Bennett, E. Pelleier, G. Albarnd, J.P. Borgogno, C. Carniglia, R.A. Schmell, T.H. Allen, T. Tuttle-Hart, K.H. Guenther, A. Saxer, Comparison of properties of tirtanium dioxide films prepared by various techniques. Appl. Optics 28, 3303–3317 (1989) CrossRef
248.
Zurück zum Zitat Q. Tang, K. Kikuchi, S. Ogura, A. Macleod, Mechanism of columnar microstructure growth in titanium oxide thin films deposited by ion beam-assisted deposition. J. Vac. Sci. Technol. A 17, 3379–3384 (1999) CrossRef Q. Tang, K. Kikuchi, S. Ogura, A. Macleod, Mechanism of columnar microstructure growth in titanium oxide thin films deposited by ion beam-assisted deposition. J. Vac. Sci. Technol. A 17, 3379–3384 (1999) CrossRef
249.
Zurück zum Zitat F.L. Williams, D.E. Reicher, C.B. Jung, J.R. McNeil, Metal dioxides using ion-assisted deposition at low temperature. J. Vac. Sci. Technol. 7, 2286–2288 (1989) CrossRef F.L. Williams, D.E. Reicher, C.B. Jung, J.R. McNeil, Metal dioxides using ion-assisted deposition at low temperature. J. Vac. Sci. Technol. 7, 2286–2288 (1989) CrossRef
250.
Zurück zum Zitat H. Nan, Y. Ping, C. Xuan, L. Yongxang, Z. Xiaolan, C. Guangjun, Z. Zihong, Z. Feng, C. Yuanru, L. Xianghuai, X. Tingfei, Blood compatibility of amorphous titanium oxide films synthesized by ion enhanced deposition. Biomaterials 19, 771–776 (1998) CrossRef H. Nan, Y. Ping, C. Xuan, L. Yongxang, Z. Xiaolan, C. Guangjun, Z. Zihong, Z. Feng, C. Yuanru, L. Xianghuai, X. Tingfei, Blood compatibility of amorphous titanium oxide films synthesized by ion enhanced deposition. Biomaterials 19, 771–776 (1998) CrossRef
251.
Zurück zum Zitat F. Zhang, X. Liu, Y. Mao, N. Huang, Y. Chen, Z. Zheng, Z. Zhou, A. Chen, Z. Jiang, Artificial heart valves: improved hemocompatibility by titanium oxide coatings prepared by ion beam-assisted deposition. Surf. Coating Technol. 103–104, 146–150 (1998) CrossRef F. Zhang, X. Liu, Y. Mao, N. Huang, Y. Chen, Z. Zheng, Z. Zhou, A. Chen, Z. Jiang, Artificial heart valves: improved hemocompatibility by titanium oxide coatings prepared by ion beam-assisted deposition. Surf. Coating Technol. 103–104, 146–150 (1998) CrossRef
Metadaten
Titel
Ion Beam-Assisted Deposition
verfasst von
Bernd Rauschenbach
Copyright-Jahr
2022
DOI
https://doi.org/10.1007/978-3-030-97277-6_10

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