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2022 | OriginalPaper | Buchkapitel

9. Ion Beam Deposition and Cleaning

verfasst von : Bernd Rauschenbach

Erschienen in: Low-Energy Ion Irradiation of Materials

Verlag: Springer International Publishing

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Abstract

Direct deposition of low-energy ionized atoms or molecules (IBD) onto a substrate has key advantages in terms of controlling layer properties. In general, this technique is based either on the deceleration of high-energy, mass-separated ion beams or the generation of mass-separated, low-energy ion beams. The growth of the layers is primarily determined by the balance between two energy-dependent effects, deposition (sticking of deposited atoms or molecules) and sputtering. Processes such as sputtering, ion reflection, and athermal generation of defects define an energy window for successful deposition of the layers. The application of molecular ions for layer deposition is characterized by the fact that these ions are fragmented above a threshold energy. The potential of IBD with hyperthermal particles can be advantageously used in the synthesis of both stable and metastable phases in the deposited layers. As examples, the deposition of carbon and diamond-like carbon films, epitaxial silicon and germanium films, metal films and also compound films can be mentioned. High-quality thin organic films can be deposited by a specific variant of the IBD technique, the electrospray deposition. This technique, based on soft landing, allows the non-destructive deposition of large organic molecules on the surface of a substrate, when the energy of these molecules is lower than the activation energy for collision induced dissociation. This technique is presented and the deposition of selected organic layers is demonstrated. Finally, a method for cleaning surfaces by low energy ion bombardment is reviewed. It is characterized by the removal of surface contamination, adsorbates or compound layers on the surface without significantly damaging the underlying structure.

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Literatur
1.
Zurück zum Zitat J.M.E. Harper, Ion beam deposition, in Thin Film Processes. ed. by J.L. Vossen, W. Kern (Academic Press, New York, 1978), pp. 175–206CrossRef J.M.E. Harper, Ion beam deposition, in Thin Film Processes. ed. by J.L. Vossen, W. Kern (Academic Press, New York, 1978), pp. 175–206CrossRef
2.
Zurück zum Zitat K. Miyaka, T. Tokuyama, Direct ion beam deposition, in Ion Beam Assisted Film Deposition, ed. by T. Itoh, (Elsevier Science, Amsterdam 1989), pp. 289–317 K. Miyaka, T. Tokuyama, Direct ion beam deposition, in Ion Beam Assisted Film Deposition, ed. by T. Itoh, (Elsevier Science, Amsterdam 1989), pp. 289–317
3.
Zurück zum Zitat J. J. Cuomo, S. M. Rossnagel, H. R. Kaufman, (Eds.) Handbook of ion beam processing, Noyes Publ. Westwood 1989 J. J. Cuomo, S. M. Rossnagel, H. R. Kaufman, (Eds.) Handbook of ion beam processing, Noyes Publ. Westwood 1989
4.
Zurück zum Zitat D.G. Amour, Ion beam deposition. Nucl. Instr. Meth. Phys. Res. B 89, 325–331 (1994)CrossRef D.G. Amour, Ion beam deposition. Nucl. Instr. Meth. Phys. Res. B 89, 325–331 (1994)CrossRef
5.
Zurück zum Zitat D. Marton, Film deposition from low-energy ion beams, in Low-Energy Ion-Surface Interaction, ed. by J.W. Rabalais, (Wiley, Chichester 1994), pp. 481–534 D. Marton, Film deposition from low-energy ion beams, in Low-Energy Ion-Surface Interaction, ed. by J.W. Rabalais, (Wiley, Chichester 1994), pp. 481–534
6.
Zurück zum Zitat K. Miyaka, Ion-beam deposition, in Fundamentals and the Present Status of Purification of Metals. ed. by Y. Wasada, M. Isshiki (Springer, Berlin, Heidelberg, 2002), pp. 203–222 K. Miyaka, Ion-beam deposition, in Fundamentals and the Present Status of Purification of Metals. ed. by Y. Wasada, M. Isshiki (Springer, Berlin, Heidelberg, 2002), pp. 203–222
7.
Zurück zum Zitat O. Almén, G. Bruce, Collection and sputtering experiments with noble gas ions. Nucl. Instr. Meth. 11, 257–278 (1961)CrossRef O. Almén, G. Bruce, Collection and sputtering experiments with noble gas ions. Nucl. Instr. Meth. 11, 257–278 (1961)CrossRef
8.
Zurück zum Zitat A. Fontell, E. Arminen, Direct collection of some metal ions in electromagnetic isotope separator and related surface effects. Canad. J. Phys. 47, 2405–2414 (1969)CrossRef A. Fontell, E. Arminen, Direct collection of some metal ions in electromagnetic isotope separator and related surface effects. Canad. J. Phys. 47, 2405–2414 (1969)CrossRef
9.
Zurück zum Zitat R.B. Fair, Analysis and design of ion-beam deposition apparatus. J. Appl. Phys. 42, 3176–3181 (1971)CrossRef R.B. Fair, Analysis and design of ion-beam deposition apparatus. J. Appl. Phys. 42, 3176–3181 (1971)CrossRef
10.
Zurück zum Zitat V. Franchetti, B.H. Solka, W.E. Baitinger, J.W. Amy, R.G. Cooks, Soft landing of ions as a means of surface modification. Int. J. Mass Spectrom. Ion Process 23, 29–35 (1977)CrossRef V. Franchetti, B.H. Solka, W.E. Baitinger, J.W. Amy, R.G. Cooks, Soft landing of ions as a means of surface modification. Int. J. Mass Spectrom. Ion Process 23, 29–35 (1977)CrossRef
11.
Zurück zum Zitat J.M.E. Harper, Effects of beam, target, and substrate potentials in ion beam processing. Thin Solid Films 92, 107–114 (1982)CrossRef J.M.E. Harper, Effects of beam, target, and substrate potentials in ion beam processing. Thin Solid Films 92, 107–114 (1982)CrossRef
12.
Zurück zum Zitat B. Wolf (ed.), Handbook of Ion Sources (CRC Press, Boca Raton, 1995) B. Wolf (ed.), Handbook of Ion Sources (CRC Press, Boca Raton, 1995)
13.
Zurück zum Zitat N. Sasaki, S. Shimizu, S. Ogata, Thin film growth using a high-current, mass-separated low energy ion beam deposition system. Thin Solid Films 281–282, 175–178 (1996)CrossRef N. Sasaki, S. Shimizu, S. Ogata, Thin film growth using a high-current, mass-separated low energy ion beam deposition system. Thin Solid Films 281–282, 175–178 (1996)CrossRef
14.
Zurück zum Zitat G.E. Thomas, L.J. Beckers, J.J. Vrakking, B.R. de Koning, Ion beam epiplantation. J. Cryst. Growth 56, 557–575 (1982)CrossRef G.E. Thomas, L.J. Beckers, J.J. Vrakking, B.R. de Koning, Ion beam epiplantation. J. Cryst. Growth 56, 557–575 (1982)CrossRef
15.
Zurück zum Zitat J. Ahn, R.P.W. Lawson, K.M. Yoo, K.A. Stromsmoe, M.J. Brett, Deposition of metastable binary alloy thin films using sequential ion beams from a single ion source. Nucl. Instr. Meth Phys. Res. B 17, 37–45 (1986)CrossRef J. Ahn, R.P.W. Lawson, K.M. Yoo, K.A. Stromsmoe, M.J. Brett, Deposition of metastable binary alloy thin films using sequential ion beams from a single ion source. Nucl. Instr. Meth Phys. Res. B 17, 37–45 (1986)CrossRef
16.
Zurück zum Zitat A. van Veen, Ion trapping and cluster growth, in Erosion and Growth of Solids Stimulated by Atom and Ion Beams, ed. by G. Kiriakidis, G. Carter, J.L. Whitton, (Martinus Nijhoff Publ., Dordrecht 1986), pp. 200–221 A. van Veen, Ion trapping and cluster growth, in Erosion and Growth of Solids Stimulated by Atom and Ion Beams, ed. by G. Kiriakidis, G. Carter, J.L. Whitton, (Martinus Nijhoff Publ., Dordrecht 1986), pp. 200–221
17.
Zurück zum Zitat N. Herbots, B.R. Appleton, T.S. Noggle, R.A. Zuhr, S.J. Pennycook, Ion-solid interaction during ion beam deposition of 47Ge and 30Si on Si at very low energies (0–200 eV) range. Nucl. Instr. Meth Phys. Res. B 13, 250–258 (1986)CrossRef N. Herbots, B.R. Appleton, T.S. Noggle, R.A. Zuhr, S.J. Pennycook, Ion-solid interaction during ion beam deposition of 47Ge and 30Si on Si at very low energies (0–200 eV) range. Nucl. Instr. Meth Phys. Res. B 13, 250–258 (1986)CrossRef
18.
Zurück zum Zitat S.M. Rossnagel, Directional and preferential sputtering -basedphysical vapor deposition. Thin Solid Films 263, 1–12 (1995)CrossRef S.M. Rossnagel, Directional and preferential sputtering -basedphysical vapor deposition. Thin Solid Films 263, 1–12 (1995)CrossRef
19.
Zurück zum Zitat J.W. Rabalais, D. Marton, Atomic collisions in surface chemistry and film deposition. Nucl. Instr. Meth Phys. Res. B 67, 287–295 (1992)CrossRef J.W. Rabalais, D. Marton, Atomic collisions in surface chemistry and film deposition. Nucl. Instr. Meth Phys. Res. B 67, 287–295 (1992)CrossRef
20.
Zurück zum Zitat B.W. Dobson, Atomistic simulation of silicon beam deposition Phys. Rev. B 36, 1068–1074 (1987) and Molecular-dynamics simulation of low-energy beam deposition of silicon, J. Vac. Sci. Technol. B 5, 1393–1398 (1987) B.W. Dobson, Atomistic simulation of silicon beam deposition Phys. Rev. B 36, 10681074 (1987) and Molecular-dynamics simulation of low-energy beam deposition of silicon, J. Vac. Sci. Technol. B 5, 1393–1398 (1987)
21.
Zurück zum Zitat X.W. Zhou, H.N.G. Wadley, Hyperthermal vapor deposition of copper: reflection and resputtering effects. Surf. Sci. 431, 58–73 (1999)CrossRef X.W. Zhou, H.N.G. Wadley, Hyperthermal vapor deposition of copper: reflection and resputtering effects. Surf. Sci. 431, 58–73 (1999)CrossRef
22.
Zurück zum Zitat S.S. Todorov, E.R. Fassum, Oxidation of silicon by a low-energy ion beam: experiment and model. Appl. Phys. Lett. 52, 48–50 (1988)CrossRef S.S. Todorov, E.R. Fassum, Oxidation of silicon by a low-energy ion beam: experiment and model. Appl. Phys. Lett. 52, 48–50 (1988)CrossRef
23.
Zurück zum Zitat J. Amano, Direct ion beam deposition for thin film formation. Thin. Solid Films 92, 115–122 (1982)CrossRef J. Amano, Direct ion beam deposition for thin film formation. Thin. Solid Films 92, 115–122 (1982)CrossRef
24.
Zurück zum Zitat N. Herbots, O.C. Hellman, P. Ye, X. Wang, O. Vancauwenberghe, Chemical reactions during thin-film synthesis: Ion-beam oxidation (IBO) and ion-beam nitration (IBN) of semiconductor surfaces, in Low-Energy Ion-Surface Interaction, ed. by J.W. Rabalais, (Wiley, Chichester 1994), pp. 387–480 N. Herbots, O.C. Hellman, P. Ye, X. Wang, O. Vancauwenberghe, Chemical reactions during thin-film synthesis: Ion-beam oxidation (IBO) and ion-beam nitration (IBN) of semiconductor surfaces, in Low-Energy Ion-Surface Interaction, ed. by J.W. Rabalais, (Wiley, Chichester 1994), pp. 387–480
25.
Zurück zum Zitat O. Vancauwenberghe, N. Herbots, O.C. Hellman, Role of ion energy in ion beam oxidation of semiconductors: experimental study and mode, J. Vac, Sci. Technol. A 10, 713–718 (1992) and O. Vancauwenberghe, On the growth of semiconductor-based epitaxial and oxide films from low energy ion beams, Dissertation, MIT, Cambridge, Mass. 1991 O. Vancauwenberghe, N. Herbots, O.C. Hellman, Role of ion energy in ion beam oxidation of semiconductors: experimental study and mode, J. Vac, Sci. Technol. A 10, 713–718 (1992) and O. Vancauwenberghe, On the growth of semiconductor-based epitaxial and oxide films from low energy ion beams, Dissertation, MIT, Cambridge, Mass. 1991
26.
Zurück zum Zitat O. Vancauwenberghe, N. Herbots, O.C. Hellman, A quantitative model of point defect diffusivity and recombination in ion beam deposition and combined ion and molecular vapor deposition. J. Vac. Sci. Technol. B 9, 2027–2033 (1991)CrossRef O. Vancauwenberghe, N. Herbots, O.C. Hellman, A quantitative model of point defect diffusivity and recombination in ion beam deposition and combined ion and molecular vapor deposition. J. Vac. Sci. Technol. B 9, 2027–2033 (1991)CrossRef
27.
Zurück zum Zitat N. Herbots, O. Vancauwenberghe, O.C. Hellman, Y.C. Joo, Atomic collisions, elastic recombination, and thermal diffusion during thin-film growth from low-energy ion beams. Nucl. Instr. Meth Phys. Res. B 59(60), 326–331 (1991)CrossRef N. Herbots, O. Vancauwenberghe, O.C. Hellman, Y.C. Joo, Atomic collisions, elastic recombination, and thermal diffusion during thin-film growth from low-energy ion beams. Nucl. Instr. Meth Phys. Res. B 59(60), 326–331 (1991)CrossRef
28.
Zurück zum Zitat T.Y. Tan, U. Gösele, Point defects, diffusion processes, and swirl defect formation in silicon. Appl. Phys. A 37, 1–17 (1985)CrossRef T.Y. Tan, U. Gösele, Point defects, diffusion processes, and swirl defect formation in silicon. Appl. Phys. A 37, 1–17 (1985)CrossRef
29.
Zurück zum Zitat V. Grill, J. Shen, C. Evans, R.G. Cooks, Collisions of ions with surface at chemically relevant energies: Instrumentation and phenomena. Rev. Sci. Instr. 72, 3149–3179 (2001)CrossRef V. Grill, J. Shen, C. Evans, R.G. Cooks, Collisions of ions with surface at chemically relevant energies: Instrumentation and phenomena. Rev. Sci. Instr. 72, 3149–3179 (2001)CrossRef
30.
Zurück zum Zitat B. Gologan, J.R. Green, J. Alvarez, J. Laskin, G. Cooks, Ion/surface reactions and soft-landing. Phys. Chem. Chem. Phys. 7, 1490–1500 (2005)CrossRef B. Gologan, J.R. Green, J. Alvarez, J. Laskin, G. Cooks, Ion/surface reactions and soft-landing. Phys. Chem. Chem. Phys. 7, 1490–1500 (2005)CrossRef
31.
Zurück zum Zitat S. Hayakawa, Charge inversion mass spectrometry: dissociation of resonantly neutralized molecules. J. Mass Spectrom. 39, 111–135 (2004)CrossRef S. Hayakawa, Charge inversion mass spectrometry: dissociation of resonantly neutralized molecules. J. Mass Spectrom. 39, 111–135 (2004)CrossRef
32.
Zurück zum Zitat D.C. Jacobs, Reactive collisions of hyperthermal energy molecular ions with solid surfaces. Annu. Rev. Phys. Chem. 53, 379–407 (2002)CrossRef D.C. Jacobs, Reactive collisions of hyperthermal energy molecular ions with solid surfaces. Annu. Rev. Phys. Chem. 53, 379–407 (2002)CrossRef
33.
Zurück zum Zitat L. Krumbein, K. Anggara, M. Stella, T. Michnowicz, H. Ochner, S. Abb, G. Rinke, A. Portz, M. Dürr, U. Schlickum, A. Baldwin, A. Floris, K. Kern, S. Rauschenbach, Fast molecular compression by a hyperthermal collision gives bond-selective mechanochemistry. Phys. Rev. Lett. 126, 056001 (2001) L. Krumbein, K. Anggara, M. Stella, T. Michnowicz, H. Ochner, S. Abb, G. Rinke, A. Portz, M. Dürr, U. Schlickum, A. Baldwin, A. Floris, K. Kern, S. Rauschenbach, Fast molecular compression by a hyperthermal collision gives bond-selective mechanochemistry. Phys. Rev. Lett. 126, 056001 (2001)
34.
Zurück zum Zitat W. Jacob, J. Roth, Chemical sputtering in Sputtering by Particle Bombardment, Experiments and Computer Calculations from Threshold to MeV Energies, ed. by R. Behrisch, W. Eckstein, (Springer, Berlin, 2007), pp. 329–400 W. Jacob, J. Roth, Chemical sputtering in Sputtering by Particle Bombardment, Experiments and Computer Calculations from Threshold to MeV Energies, ed. by R. Behrisch, W. Eckstein, (Springer, Berlin, 2007), pp. 329–400
35.
Zurück zum Zitat N. Sakudo, K. Hayashi, Exact energy values of low-energy ion beams. Rev. Sci. Instr. 67, 1218–1220 (1996)CrossRef N. Sakudo, K. Hayashi, Exact energy values of low-energy ion beams. Rev. Sci. Instr. 67, 1218–1220 (1996)CrossRef
36.
Zurück zum Zitat N. Sakudo, K. Hayashi, N. Ikenaga, N. Sakaguchi, K. Moriike, K. Fujimura, M. Okada, T. Maesaka, Factors determining energy values of ion beams for ion-beam deposition. Nucl. Instr. Meth. Phys. Res. B 148, 53–57 (1999)CrossRef N. Sakudo, K. Hayashi, N. Ikenaga, N. Sakaguchi, K. Moriike, K. Fujimura, M. Okada, T. Maesaka, Factors determining energy values of ion beams for ion-beam deposition. Nucl. Instr. Meth. Phys. Res. B 148, 53–57 (1999)CrossRef
37.
Zurück zum Zitat S.R. Kasi, M.A. Kilburn, H. Kang, J.W. Rabalais, L. Tavernini, P. Hochmann, Interaction of low energy reactive ions with surfaces. III. Scattering of 30–200 eV Ne+, O+, C+, and CO+ from Ni(111), J. Chem. Phys. 88, 5902–5913 (1988) S.R. Kasi, M.A. Kilburn, H. Kang, J.W. Rabalais, L. Tavernini, P. Hochmann, Interaction of low energy reactive ions with surfaces. III. Scattering of 30–200 eV Ne+, O+, C+, and CO+ from Ni(111), J. Chem. Phys. 88, 5902–5913 (1988)
38.
Zurück zum Zitat T. Michely, C. Teichert, adatom yields, sputterings, and damage patterns of single-ion impacts on Pt(111). Phys. Rev. B 50, 11156–11566 (1994)CrossRef T. Michely, C. Teichert, adatom yields, sputterings, and damage patterns of single-ion impacts on Pt(111). Phys. Rev. B 50, 11156–11566 (1994)CrossRef
39.
Zurück zum Zitat D.K. Brice, J.Y. Tsao, S.T. Picraux, Partitioning of ion-induced surface and bulk displacements. Nucl. Instr. Meth. Phys. Res. B 44, 68–78 (1989)CrossRef D.K. Brice, J.Y. Tsao, S.T. Picraux, Partitioning of ion-induced surface and bulk displacements. Nucl. Instr. Meth. Phys. Res. B 44, 68–78 (1989)CrossRef
40.
Zurück zum Zitat Z.Q. Ma, Optimal energies for ion-assisted growth of IVA thin films. Intern. J. Mod. Phys. B 21, 4299–4322 (2007)CrossRef Z.Q. Ma, Optimal energies for ion-assisted growth of IVA thin films. Intern. J. Mod. Phys. B 21, 4299–4322 (2007)CrossRef
41.
Zurück zum Zitat H.D. Hagstrum, Studies of adsorbate electronic structure using ion neutralization and photoemission spectroscopies, in Electron and Ion Spectroscopy of Solids, ed. by L. Fiermanns, J. Vennik, W. Dekeyser, (Plenum Press, New Your 1978), pp. 273–323 H.D. Hagstrum, Studies of adsorbate electronic structure using ion neutralization and photoemission spectroscopies, in Electron and Ion Spectroscopy of Solids, ed. by L. Fiermanns, J. Vennik, W. Dekeyser, (Plenum Press, New Your 1978), pp. 273–323
42.
Zurück zum Zitat D. Marton, K.J. Boyd, T. Lytle, J.W. Rabalais, Auger-electron spectroscopy of krypton subplanted in graphite. Surf. Sci. 282, 113–121 (1993)CrossRef D. Marton, K.J. Boyd, T. Lytle, J.W. Rabalais, Auger-electron spectroscopy of krypton subplanted in graphite. Surf. Sci. 282, 113–121 (1993)CrossRef
43.
Zurück zum Zitat S.R. Kasi, H. Kang, J.W. Rabalais, Interaction of low energy reactive ions with surfaces. IV. Chemically bonded diamond-like films from ion-beam deposition. J. Chem. Phys. 88, 5914–5924 (1988) S.R. Kasi, H. Kang, J.W. Rabalais, Interaction of low energy reactive ions with surfaces. IV. Chemically bonded diamond-like films from ion-beam deposition. J. Chem. Phys. 88, 5914–5924 (1988)
44.
Zurück zum Zitat M. Mensing, P. Schumacher, J.W. Gerlach, S. Herath, A. Lotnyk, B. Rauschenbach, Influence of nitrogen ion species on mass-selected low energy ion-assisted growth of epitaxial GaN thin films. Appl. Surf. Sci. 498, 143830 (2019) M. Mensing, P. Schumacher, J.W. Gerlach, S. Herath, A. Lotnyk, B. Rauschenbach, Influence of nitrogen ion species on mass-selected low energy ion-assisted growth of epitaxial GaN thin films. Appl. Surf. Sci. 498, 143830 (2019)
45.
Zurück zum Zitat H. Akazawa, Y. Murata, Interaction of reactive ions with Pt(100). II. Dissociative scattering of molecular ions near the threshold energy region. J. Chem Phys. 92, 5561–5568 (1990) H. Akazawa, Y. Murata, Interaction of reactive ions with Pt(100). II. Dissociative scattering of molecular ions near the threshold energy region. J. Chem Phys. 92, 5561–5568 (1990)
46.
Zurück zum Zitat S.R. Kasi, H. Kang, C.S. Sass, J.W. Rabalais, Inelastic processes in low-energy ion surface collisions, Surf. Sci. Rep. 10, 1–104 (1989) S.R. Kasi, H. Kang, C.S. Sass, J.W. Rabalais, Inelastic processes in low-energy ion surface collisions, Surf. Sci. Rep. 10, 1–104 (1989)
47.
Zurück zum Zitat B.N. Chapman, D.S. Campbell, Condensation of high-energy atomic beams. J. Phys. C 2, 200–209 (1969)CrossRef B.N. Chapman, D.S. Campbell, Condensation of high-energy atomic beams. J. Phys. C 2, 200–209 (1969)CrossRef
48.
Zurück zum Zitat G.E. Lane, J.C. Anderson, The nucleation and initial growth of gold films deposited onto sodium chloride by ion-beam sputtering. Thin Solid Films 26, 5–23 (1975). Features of initial growth of gold films deposited on rock-salt substrates by ion beam sputtering. Thin Solid Films 57, 277–283 (1979) G.E. Lane, J.C. Anderson, The nucleation and initial growth of gold films deposited onto sodium chloride by ion-beam sputtering. Thin Solid Films 26, 523 (1975). Features of initial growth of gold films deposited on rock-salt substrates by ion beam sputtering. Thin Solid Films 57, 277–283 (1979)
49.
Zurück zum Zitat M.-A. Hasan, S.A. Barnett, J.-E. Sundgren, J.E. Greene, Nucleation and initial growth of In deposited on Si3N4 using low-energy (<300 eV) accelerated beams in ultrahigh vacuum. J. Vac. Sci. Technol. A 5, 1883–1887 (1987)CrossRef M.-A. Hasan, S.A. Barnett, J.-E. Sundgren, J.E. Greene, Nucleation and initial growth of In deposited on Si3N4 using low-energy (<300 eV) accelerated beams in ultrahigh vacuum. J. Vac. Sci. Technol. A 5, 1883–1887 (1987)CrossRef
50.
Zurück zum Zitat S. Esch, M. Bott T. Michely, G. Comsa, Nucleation of homoepitaxial films grown with ion assistance on Pt(111). Appl. Phys. Lett. 67, 3209–3211 (1995). S. Esch, M. Breeman, M. Morgenstern, T. Michely, G. Comsa, Nucleation and morphology of homoepitaxial Pt(111)-films grown with ion beam assisted deposition. Surf. Sci. 365, 187–204 (1996) S. Esch, M. Bott T. Michely, G. Comsa, Nucleation of homoepitaxial films grown with ion assistance on Pt(111). Appl. Phys. Lett. 67, 32093211 (1995). S. Esch, M. Breeman, M. Morgenstern, T. Michely, G. Comsa, Nucleation and morphology of homoepitaxial Pt(111)-films grown with ion beam assisted deposition. Surf. Sci. 365, 187–204 (1996)
51.
Zurück zum Zitat M. Kaff, M. Breeman, M. Morgenstern, T. Michely, G. Comsa, Effect of energetic particles on island formation in sputter deposition of Pt on Pt(111). Appl Phys Lett. 70, 182–184 (1997)CrossRef M. Kaff, M. Breeman, M. Morgenstern, T. Michely, G. Comsa, Effect of energetic particles on island formation in sputter deposition of Pt on Pt(111). Appl Phys Lett. 70, 182–184 (1997)CrossRef
52.
Zurück zum Zitat J. M. Pomeroy, A. Couture, J. Jacobsen, C.C. Hill, J.P. Sethna, B.H. Cooper, J.D. Brock, STM characterization of Cu thin films grown by direct ion deposition. Vol. 648, Proceed. MRS (2000), P7.3 J. M. Pomeroy, A. Couture, J. Jacobsen, C.C. Hill, J.P. Sethna, B.H. Cooper, J.D. Brock, STM characterization of Cu thin films grown by direct ion deposition. Vol. 648, Proceed. MRS (2000), P7.3
53.
Zurück zum Zitat B. Degroote, A. Vantomme, H. Pattyn, K. Vanormelingen, Hyperthermal effects on nucleation and growth during low-energy ion deposition. Phys. Rev. B 65, 195401 (2002) B. Degroote, A. Vantomme, H. Pattyn, K. Vanormelingen, Hyperthermal effects on nucleation and growth during low-energy ion deposition. Phys. Rev. B 65, 195401 (2002)
54.
Zurück zum Zitat J. M. Pomeroy, J. Jacobsen, C.C. Hill, B.H. Cooper, J.P. Sethna, Kinetic Monte Carlo–molecular dynamics investigations of hyperthermal copper deposition on Cu(111), Phys. Rev. B 66, 235412 (2002) J. M. Pomeroy, J. Jacobsen, C.C. Hill, B.H. Cooper, J.P. Sethna, Kinetic Monte Carlo–molecular dynamics investigations of hyperthermal copper deposition on Cu(111), Phys. Rev. B 66, 235412 (2002)
55.
Zurück zum Zitat J. Jacobsen, B.H. Cooper, J.P. Sethna, Simulations of energetic beam deposition: from picoseconds to seconds. Phys. Rev. B 58, 15847–15865 (1998)CrossRef J. Jacobsen, B.H. Cooper, J.P. Sethna, Simulations of energetic beam deposition: from picoseconds to seconds. Phys. Rev. B 58, 15847–15865 (1998)CrossRef
56.
Zurück zum Zitat Z.Q. Ma, Y.F. Zheng, B.X. Liu, Ion-induced surface and bulk displacement threshold for epitaxial growth. Phys. Stat. Sol. (a) 169, 239–248 (1998). Sketching of preferred energy regime for ion beam assisted epitaxy. App. Surf. Sci. 137, 184–190 (1999) Z.Q. Ma, Y.F. Zheng, B.X. Liu, Ion-induced surface and bulk displacement threshold for epitaxial growth. Phys. Stat. Sol. (a) 169, 239248 (1998). Sketching of preferred energy regime for ion beam assisted epitaxy. App. Surf. Sci. 137, 184–190 (1999)
57.
Zurück zum Zitat S. Mohajerzadeh, C.R. Selvakumar, A simple model for low energy ion-solid interactions. J. Appl. Phys. 81, 3003–3006 (1997)CrossRef S. Mohajerzadeh, C.R. Selvakumar, A simple model for low energy ion-solid interactions. J. Appl. Phys. 81, 3003–3006 (1997)CrossRef
58.
Zurück zum Zitat N.A. Kuboto, D.J. Economou, S.J. Plimpton, Molecular dynamics simulations of low-energy (25–200 eV) argon ion interactions with silicon surfaces: sputter yields and product formation pathways. J. Appl. Phys. 83, 4056–4063 (1998) N.A. Kuboto, D.J. Economou, S.J. Plimpton, Molecular dynamics simulations of low-energy (25–200 eV) argon ion interactions with silicon surfaces: sputter yields and product formation pathways. J. Appl. Phys. 83, 4056–4063 (1998)
59.
Zurück zum Zitat J.P. Chang, J.C. Arnold, G.C.H. Zau, H.-S. Shin, H.H. Sawin, Kinetic study of low energy argon ion-enhanced plasma etching pf polysilicon with atomic/molecular chlorine. J. Vac. Sci. Technol. A 15, 1853–1863 (1967)CrossRef J.P. Chang, J.C. Arnold, G.C.H. Zau, H.-S. Shin, H.H. Sawin, Kinetic study of low energy argon ion-enhanced plasma etching pf polysilicon with atomic/molecular chlorine. J. Vac. Sci. Technol. A 15, 1853–1863 (1967)CrossRef
60.
Zurück zum Zitat C.R. Laurens, M.F. Roşu, F. Pleiter, L. Nielsen, Soft-landing ion deposition of isolated radioactive probe atoms on surfaces: a novel method. Phys. Rev. Lett. 78, 4075–4078 (1997)CrossRef C.R. Laurens, M.F. Roşu, F. Pleiter, L. Nielsen, Soft-landing ion deposition of isolated radioactive probe atoms on surfaces: a novel method. Phys. Rev. Lett. 78, 4075–4078 (1997)CrossRef
61.
Zurück zum Zitat A.H. Al-Bayati, K.J. Boyd, D. Marton, S.S. Todorov, J.W. Rabalais, Z.H. Zhang, W.K. Chu, Substrate temperature dependence of homoepitaxial growth of Si using mass selected ion beam deposition. J. Appl. Phys. 76, 4383–4389 (1994)CrossRef A.H. Al-Bayati, K.J. Boyd, D. Marton, S.S. Todorov, J.W. Rabalais, Z.H. Zhang, W.K. Chu, Substrate temperature dependence of homoepitaxial growth of Si using mass selected ion beam deposition. J. Appl. Phys. 76, 4383–4389 (1994)CrossRef
62.
Zurück zum Zitat M.V. Murty, H.A. Atwater, Defect generation and morphology of (001) Si surface during Ar-ion bombardment. Phys. Rev. B 45, 1507–1510 (1992)CrossRef M.V. Murty, H.A. Atwater, Defect generation and morphology of (001) Si surface during Ar-ion bombardment. Phys. Rev. B 45, 1507–1510 (1992)CrossRef
63.
Zurück zum Zitat M. Morgenstern, T. Michely, G. Comsa, Collective effects in the adatom production by 4.5 keV rare-gas impacts on Pt(111): a low temperature scanning tunnelling microscopy analysis. Phil. Mag. A 79, 775–794 (1999) M. Morgenstern, T. Michely, G. Comsa, Collective effects in the adatom production by 4.5 keV rare-gas impacts on Pt(111): a low temperature scanning tunnelling microscopy analysis. Phil. Mag. A 79, 775–794 (1999)
64.
Zurück zum Zitat M. Ghaly, K. Nordlund, R.S. Averback, Molecular dynamics investigations of surface damage produced by kiloelectronvolt self-bombardment of solids. Phil. Mag. A 79, 795–820 (1999)CrossRef M. Ghaly, K. Nordlund, R.S. Averback, Molecular dynamics investigations of surface damage produced by kiloelectronvolt self-bombardment of solids. Phil. Mag. A 79, 795–820 (1999)CrossRef
65.
Zurück zum Zitat G. Carter, Island-density and size dynamics in ion-assisted atomic deposition. Vacuum 55, 235–247 (1999). See also H.H. Anderson, The depth resolution of sputter profiling, Appl. Phys. 18, 131-140 (1979)CrossRef G. Carter, Island-density and size dynamics in ion-assisted atomic deposition. Vacuum 55, 235–247 (1999). See also H.H. Anderson, The depth resolution of sputter profiling, Appl. Phys. 18, 131-140 (1979)CrossRef
66.
Zurück zum Zitat K.-H. Müller, Role of incident kinetic energy of adatoms in thin film growth. Surf. Sci. 184, L375–L382 (1987)CrossRef K.-H. Müller, Role of incident kinetic energy of adatoms in thin film growth. Surf. Sci. 184, L375–L382 (1987)CrossRef
67.
Zurück zum Zitat R. Ditchfeld, E.G., Seebauer, Semiconductor surface diffusion: effects of low-energy ion bombardment, Phys. Rev. B 63, 125317 (2001) R. Ditchfeld, E.G., Seebauer, Semiconductor surface diffusion: effects of low-energy ion bombardment, Phys. Rev. B 63, 125317 (2001)
68.
Zurück zum Zitat R. Ditchfeld, E.G., Seebauer, Direct measurement of ion-influenced surface diffusion. Phys. Rev. Lett. 82, 1185–1188 (1999) R. Ditchfeld, E.G., Seebauer, Direct measurement of ion-influenced surface diffusion. Phys. Rev. Lett. 82, 1185–1188 (1999)
69.
Zurück zum Zitat W.F. Engelhoff, I. Jacob, Reflection high-energy electron diffraction (RHEED) oscillations at 77 K. Phys. Rev. Lett. 63, 921–924 (89). R. Kunkel, B. Poelsema, L. K. Verheij, G. Comsa, Reentrant layer-by-layer growth during molecular-beam epitaxy of metal-on-metal substrates. Phys. Rev. Lett. 65, 733–736 (1990) W.F. Engelhoff, I. Jacob, Reflection high-energy electron diffraction (RHEED) oscillations at 77 K. Phys. Rev. Lett. 63, 921924 (89). R. Kunkel, B. Poelsema, L. K. Verheij, G. Comsa, Reentrant layer-by-layer growth during molecular-beam epitaxy of metal-on-metal substrates. Phys. Rev. Lett. 65, 733–736 (1990)
70.
Zurück zum Zitat X.W. Zhou, H.N.G. Wadley, Hyperthermal vapor deposition of copper: athermal and biased diffusion effects. Surf. Sci. 431, 42–57 (1999)CrossRef X.W. Zhou, H.N.G. Wadley, Hyperthermal vapor deposition of copper: athermal and biased diffusion effects. Surf. Sci. 431, 42–57 (1999)CrossRef
71.
Zurück zum Zitat D.E. Sanders, A. E. DePristo, Metal/metal homo-epitaxy on fcc (001) surfaces: Is there transient mobility of adsorbed atoms? Surf. Sci. 254 (1991) 341–353 (1991). P. Stoltze and J.K. Nørskov, Accommodation and diffusion of Cu deposited on flat and stepped Cu(111) surfaces. Phys. Rev. B 48 (1993) 5607–5611 D.E. Sanders, A. E. DePristo, Metal/metal homo-epitaxy on fcc (001) surfaces: Is there transient mobility of adsorbed atoms? Surf. Sci. 254 (1991) 341353 (1991). P. Stoltze and J.K. Nørskov, Accommodation and diffusion of Cu deposited on flat and stepped Cu(111) surfaces. Phys. Rev. B 48 (1993) 5607–5611
72.
Zurück zum Zitat D. Adamovic, E.P. Münger, V. Chirita, L. Hultman, J.E. Greene, Low-energy ion irradiation during film growth: Kinetic pathways leading to enhanced adatom migration, Appl. Phys. Lett. 86, 211915 (2005). D. Adamovic, V. Chirita, E.P. Münger, L. Hultman, J.E. Greene, Enhanced intra- and interlayer mass transport on Pt(111) via 5–50 eV Pt atom impacts on two-dimensional Pt clusters. Thin Solid Films 515, 2235–2243 (2006) D. Adamovic, E.P. Münger, V. Chirita, L. Hultman, J.E. Greene, Low-energy ion irradiation during film growth: Kinetic pathways leading to enhanced adatom migration, Appl. Phys. Lett. 86, 211915 (2005). D. Adamovic, V. Chirita, E.P. Münger, L. Hultman, J.E. Greene, Enhanced intra- and interlayer mass transport on Pt(111) via 550 eV Pt atom impacts on two-dimensional Pt clusters. Thin Solid Films 515, 2235–2243 (2006)
73.
Zurück zum Zitat J. Sillanpaä, I. Koponen, Island growth in ion beam assisted metal-on-metal deposition modelled by rate equations. Nucl. Instr. Meth. Phys. Res. B 142, 67–76 (1998)CrossRef J. Sillanpaä, I. Koponen, Island growth in ion beam assisted metal-on-metal deposition modelled by rate equations. Nucl. Instr. Meth. Phys. Res. B 142, 67–76 (1998)CrossRef
74.
Zurück zum Zitat E.F.C. Haddeman, B.S. Bunnik, B.J. Thijsse, Thin film growth and ion-beam modification: MD simulations going beyond simple systems, in Fundamental Mechanisms of Low-Energy-Beam-Modified Surface Growth and Processing, ed. by S.C. Moss, E.H. Chason, B.H. Cooper, J.M.E. Harper, T.D. de la Rubia, M.V.R. Murty, Vol. 585, Mater. Rec. Soc., Symp. Proceed. (2000), pp. 103–106 E.F.C. Haddeman, B.S. Bunnik, B.J. Thijsse, Thin film growth and ion-beam modification: MD simulations going beyond simple systems, in Fundamental Mechanisms of Low-Energy-Beam-Modified Surface Growth and Processing, ed. by S.C. Moss, E.H. Chason, B.H. Cooper, J.M.E. Harper, T.D. de la Rubia, M.V.R. Murty, Vol. 585, Mater. Rec. Soc., Symp. Proceed. (2000), pp. 103–106
75.
Zurück zum Zitat J.J. Quan, X.W. Zhou, H.N.G. Wadley, Atomic assembly of metal surfaces and interfaces. Surf. Sci. 600, 4537–4547 (2006)CrossRef J.J. Quan, X.W. Zhou, H.N.G. Wadley, Atomic assembly of metal surfaces and interfaces. Surf. Sci. 600, 4537–4547 (2006)CrossRef
76.
Zurück zum Zitat T. Huhtamäki, M.O. Jahma, I.T. Koponen, A simple model for quantifying the degree of layer-to-layer growth in low energy ion deposition of thin films. Nucl. Instr. Meth. in Phys. Res. B 264, 55–60 (2007)CrossRef T. Huhtamäki, M.O. Jahma, I.T. Koponen, A simple model for quantifying the degree of layer-to-layer growth in low energy ion deposition of thin films. Nucl. Instr. Meth. in Phys. Res. B 264, 55–60 (2007)CrossRef
77.
Zurück zum Zitat Q. Fu, T. Wagner, Diffusion-corrected simultaneous multilayer growth model, Phys. Rev. Lett. 90, 106105 (2003) Q. Fu, T. Wagner, Diffusion-corrected simultaneous multilayer growth model, Phys. Rev. Lett. 90, 106105 (2003)
78.
Zurück zum Zitat B. Schultrich, Tetrahedrally Bonded Amorphous Carbon Films, Springer-Series in Materials Sciences, Vol. 263 (Springer, Berlin, 2018) B. Schultrich, Tetrahedrally Bonded Amorphous Carbon Films, Springer-Series in Materials Sciences, Vol. 263 (Springer, Berlin, 2018)
79.
Zurück zum Zitat S. Aisenberg, R. Chabot, Ion-beam deposition of thin films of diamondlike carbon. J. Appl. Phys. 42, 2953–2958 (1972). S. Aisenberg, R. Chabot, Physics of ion plating and ion beam deposition. J. Vac. Sci. Technol. 10, 104–107 (1973) S. Aisenberg, R. Chabot, Ion-beam deposition of thin films of diamondlike carbon. J. Appl. Phys. 42, 29532958 (1972). S. Aisenberg, R. Chabot, Physics of ion plating and ion beam deposition. J. Vac. Sci. Technol. 10, 104–107 (1973)
80.
Zurück zum Zitat J. Ishikawa, Y. Takeiri, K. Ogawa, T. Takagi, Transparent carbon films prepared by mass-separated negative-carbon-ion-beam deposition. J. Appl. Phys. 61, 2509–2515 (1987). J. Ishikawa, K. Ogawa, K. Miyata, H. Tsuji, T. Takagi, Negative ion source (NIABNIS) and preparation of transparent carbon films by negative carbon ion beam deposition. Nucl. Instr. Meth. Phys. Res. B 21, 205–208 (1987) J. Ishikawa, Y. Takeiri, K. Ogawa, T. Takagi, Transparent carbon films prepared by mass-separated negative-carbon-ion-beam deposition. J. Appl. Phys. 61, 25092515 (1987). J. Ishikawa, K. Ogawa, K. Miyata, H. Tsuji, T. Takagi, Negative ion source (NIABNIS) and preparation of transparent carbon films by negative carbon ion beam deposition. Nucl. Instr. Meth. Phys. Res. B 21, 205–208 (1987)
81.
Zurück zum Zitat P.J. Fallon, V.S. Veerasamy, C.A. Davis, J. Robertson, G.A.J. Amaratunga, W.I. Milne, J. Koskinen, Properties of filtered-ion-beam-deposited diamondlike carbon as a function of ion energy, Phys. Rev. B. 48, 4777–4782 (1993). Erratum: Phys. Rev. B 49, 2287 (1993) P.J. Fallon, V.S. Veerasamy, C.A. Davis, J. Robertson, G.A.J. Amaratunga, W.I. Milne, J. Koskinen, Properties of filtered-ion-beam-deposited diamondlike carbon as a function of ion energy, Phys. Rev. B. 48, 4777–4782 (1993). Erratum: Phys. Rev. B 49, 2287 (1993)
82.
Zurück zum Zitat D.R. McKenzie, D. Muller, B.A. Pailthorpe, Z.H. Wang, E. Kravtchinskaja, D. Segal, P.B. Lukins, P.D. Swift, P.J. Martin, G. Amaraunga, P.H. Gaskell, A. Saeed, Properties of tetrahedral amorphous carbon prepared by vacuum arc deposition. Diamond Rel. Mater. 1, 51–59 (1991)CrossRef D.R. McKenzie, D. Muller, B.A. Pailthorpe, Z.H. Wang, E. Kravtchinskaja, D. Segal, P.B. Lukins, P.D. Swift, P.J. Martin, G. Amaraunga, P.H. Gaskell, A. Saeed, Properties of tetrahedral amorphous carbon prepared by vacuum arc deposition. Diamond Rel. Mater. 1, 51–59 (1991)CrossRef
83.
Zurück zum Zitat J.P. Hirvonen, J. Koskinen, R. Lappalainen, A. Anttila, Preparation and properties of high density, hydrogen free hard carbon films with direct ion beam or arc discharge deposition, in Properties and Characterization of Amorphous Carbon Films, ed. by J.J. Pouch, S.A. Alterovitz, (Trans Tech Publications, Zürich 1990) pp. 197–216 J.P. Hirvonen, J. Koskinen, R. Lappalainen, A. Anttila, Preparation and properties of high density, hydrogen free hard carbon films with direct ion beam or arc discharge deposition, in Properties and Characterization of Amorphous Carbon Films, ed. by J.J. Pouch, S.A. Alterovitz, (Trans Tech Publications, Zürich 1990) pp. 197–216
84.
Zurück zum Zitat Y. Lifshitz, G.D. Lempert, S. Rotter, I. Avigal, C. Uzan-Saguy, R. Kalish, D. Marton, J.W. Rabalais, The effect of ion energy on the diamond-like/graphitic (sp3/sp2) nature of carbon films deposited by ion beams. Diamond Rel. Mater. 3, 542–546 (1994)CrossRef Y. Lifshitz, G.D. Lempert, S. Rotter, I. Avigal, C. Uzan-Saguy, R. Kalish, D. Marton, J.W. Rabalais, The effect of ion energy on the diamond-like/graphitic (sp3/sp2) nature of carbon films deposited by ion beams. Diamond Rel. Mater. 3, 542–546 (1994)CrossRef
85.
Zurück zum Zitat E. Grossman, G.D. Lampert, J. Kulik, D. Marton, J.W. Rabalais, Y. Lifshitz, Role of ion energy in determination of the sp3 fraction of ion beam deposited carbon films, Appl. Phys. Lett. 68, 1214–1216 (1996) E. Grossman, G.D. Lampert, J. Kulik, D. Marton, J.W. Rabalais, Y. Lifshitz, Role of ion energy in determination of the sp3 fraction of ion beam deposited carbon films, Appl. Phys. Lett. 68, 1214–1216 (1996)
86.
Zurück zum Zitat D. Marton, K.J. Boyd, I.W. Rabalais, Y. Lifshitz, Semiquantitative subplantation model for low energy ion interactions with surfaces. II. Ion beam deposition of carbon and carbon nitride. J. Vac. Sci. Technol. A. 16, 455–462 (1998) D. Marton, K.J. Boyd, I.W. Rabalais, Y. Lifshitz, Semiquantitative subplantation model for low energy ion interactions with surfaces. II. Ion beam deposition of carbon and carbon nitride. J. Vac. Sci. Technol. A. 16, 455–462 (1998)
87.
Zurück zum Zitat J. Kulik, G.D. Lempert, E. Grossman, D. Marton, J.W. Rabalais, Y. Lifshitz, sp3 content of mass-selected-ion-beam-deposited carbon films determined by inelastic and elastic electrons scattering. Phys. Rev. B 52, 151812–215822 (1995)CrossRef J. Kulik, G.D. Lempert, E. Grossman, D. Marton, J.W. Rabalais, Y. Lifshitz, sp3 content of mass-selected-ion-beam-deposited carbon films determined by inelastic and elastic electrons scattering. Phys. Rev. B 52, 151812–215822 (1995)CrossRef
88.
Zurück zum Zitat J.A. Thornton, D.W. Hoffman, Stress-related effects in thin films. Thin Solid Films 171, 5–31 (1989)CrossRef J.A. Thornton, D.W. Hoffman, Stress-related effects in thin films. Thin Solid Films 171, 5–31 (1989)CrossRef
89.
Zurück zum Zitat D.R. McKenzie, Tetrahedral bonding in amorphous carbon. Rep. Prog. Phys. 59, 1611–1664 (1996)CrossRef D.R. McKenzie, Tetrahedral bonding in amorphous carbon. Rep. Prog. Phys. 59, 1611–1664 (1996)CrossRef
90.
Zurück zum Zitat D.R. McKenzie, D. Muller, B.A. Pailthorpe, Compressive-stress-induced formation of thin-film tetrahedral amorphous carbon. Phys. Rev. Lett. 67, 773–776 (1991)CrossRef D.R. McKenzie, D. Muller, B.A. Pailthorpe, Compressive-stress-induced formation of thin-film tetrahedral amorphous carbon. Phys. Rev. Lett. 67, 773–776 (1991)CrossRef
91.
Zurück zum Zitat C.A. Davis, A simple model for the formation of compressive stress in thin films by ion bombardment. Thin Solid Films 226, 30–34 (1993)CrossRef C.A. Davis, A simple model for the formation of compressive stress in thin films by ion bombardment. Thin Solid Films 226, 30–34 (1993)CrossRef
92.
Zurück zum Zitat Y. Lifshitz, G.D. Lempert, E. Grossman, Substantiation of subplantation model for diamondlike film growth by atomic force microscopy. Phys. Rev. Lett. 72, 2753–2757 (1994)CrossRef Y. Lifshitz, G.D. Lempert, E. Grossman, Substantiation of subplantation model for diamondlike film growth by atomic force microscopy. Phys. Rev. Lett. 72, 2753–2757 (1994)CrossRef
93.
Zurück zum Zitat Y. Lifshitz, G.D. Lempert, E. Grossman, I. Avigal, C. Uzan-Saguy, R. Kalish, J. Kulik, D. Marton, J.W. Rabalais, Growth mechanisms of DLC films from C+ ions: experimental studies. Diamond Rel. Mater. 4, 318–323 (1995)CrossRef Y. Lifshitz, G.D. Lempert, E. Grossman, I. Avigal, C. Uzan-Saguy, R. Kalish, J. Kulik, D. Marton, J.W. Rabalais, Growth mechanisms of DLC films from C+ ions: experimental studies. Diamond Rel. Mater. 4, 318–323 (1995)CrossRef
94.
Zurück zum Zitat M. Chhowalla, J. Robertson, C.W. Chen, S.R.P. Silva, C.A. Davis G.A.J. Amaratunga, W.I. Milne, Influence of ion energy and substrate temperature on the optical and electronic properties of tetrahedral amorphous carbon (ta-C) films. J. Appl. Phys. 81, 139–145 (1997) M. Chhowalla, J. Robertson, C.W. Chen, S.R.P. Silva, C.A. Davis G.A.J. Amaratunga, W.I. Milne, Influence of ion energy and substrate temperature on the optical and electronic properties of tetrahedral amorphous carbon (ta-C) films. J. Appl. Phys. 81, 139–145 (1997)
95.
Zurück zum Zitat W.M. Lau, I. Bello, X. Feng, L.J. Huang, Q. Fuguang, Y. Zhenyu, R. Zhizhang, S.-T. Lee, Direct ion beam deposition of carbon films on silicon in the ion energy range of 15–500 eV. J. App. Phys. 70, 5623–5628 (1991)CrossRef W.M. Lau, I. Bello, X. Feng, L.J. Huang, Q. Fuguang, Y. Zhenyu, R. Zhizhang, S.-T. Lee, Direct ion beam deposition of carbon films on silicon in the ion energy range of 15–500 eV. J. App. Phys. 70, 5623–5628 (1991)CrossRef
96.
Zurück zum Zitat D.R. McKenzie, Generation and applications of compressive stress induced by low energy ion beam bombardment. J. Vac. Sci. Technol. B 11, 1928–1935 (1993)CrossRef D.R. McKenzie, Generation and applications of compressive stress induced by low energy ion beam bombardment. J. Vac. Sci. Technol. B 11, 1928–1935 (1993)CrossRef
97.
Zurück zum Zitat I. Koponen, M. Harkovirta, R. Lappalainen, Modeling the ion energy dependence of the sp2/sp3 bonding ratio in amorphous diamondlike films produced with a mass-separated ion beam. J. Appl. Phys. 78, 5837–5839 (1995)CrossRef I. Koponen, M. Harkovirta, R. Lappalainen, Modeling the ion energy dependence of the sp2/sp3 bonding ratio in amorphous diamondlike films produced with a mass-separated ion beam. J. Appl. Phys. 78, 5837–5839 (1995)CrossRef
98.
Zurück zum Zitat H.C. Hofsäss, H. Feldermann, R. Merk, M. Sebastian, C. Ronning, Cylindrical spike model for the formation of diamondlike thin films by ion deposition. Appl. Phys. A 66, 153–181 (1998)CrossRef H.C. Hofsäss, H. Feldermann, R. Merk, M. Sebastian, C. Ronning, Cylindrical spike model for the formation of diamondlike thin films by ion deposition. Appl. Phys. A 66, 153–181 (1998)CrossRef
99.
Zurück zum Zitat J. Robertson, Deposition mechanisms for promoting sp3 bonding in diamond-like carbon, Diam. Relat. Mater. 2, 984–989 (1993). The deposition mechanism of diamond-like a-C and a-C:H, Diam. Relat. Mater. 3, 361–368 (1994) J. Robertson, Deposition mechanisms for promoting sp3 bonding in diamond-like carbon, Diam. Relat. Mater. 2, 984–989 (1993). The deposition mechanism of diamond-like a-C and a-C:H, Diam. Relat. Mater. 3, 361–368 (1994)
100.
Zurück zum Zitat J. Robertson, Diamond-like amorphous carbon. Mater. Sci. Eng. R 37, 129–281 (2002)CrossRef J. Robertson, Diamond-like amorphous carbon. Mater. Sci. Eng. R 37, 129–281 (2002)CrossRef
101.
Zurück zum Zitat K.J. Boyd, D. Marton, J.W. Rabalais, S. Uhlmann, T. Frauenheim, Semiquantitative subplantation model for low energy ion interactions with surfaces. I. Noble gas ion-surface interactions. J. Vac. Sci. Technol. A 16, 444–462 (1998) K.J. Boyd, D. Marton, J.W. Rabalais, S. Uhlmann, T. Frauenheim, Semiquantitative subplantation model for low energy ion interactions with surfaces. I. Noble gas ion-surface interactions. J. Vac. Sci. Technol. A 16, 444–462 (1998)
102.
Zurück zum Zitat G. Carter, Spike and shock processes in high energy deposition density atomic collision events in solids. Rad. Eff. Lett. 43, 193–199 (1979). A semi quantitative approach to impact induced shock processes in solids. Rad. Eff. Lett. 50, 105–109 (1980) G. Carter, Spike and shock processes in high energy deposition density atomic collision events in solids. Rad. Eff. Lett. 43, 193199 (1979). A semi quantitative approach to impact induced shock processes in solids. Rad. Eff. Lett. 50, 105–109 (1980)
103.
Zurück zum Zitat B. Rauschenbach, K. Hohmuth, A simple approach to the analysis of ion collision cascade in solids based on the shock wave model. Phys. Status Solidi (a) 75, 159–168 (1983). Analysis of heavy-ion sputtering based on the shock wave model. Phys. Status Solidi (a) 79, 395–401 (1983) B. Rauschenbach, K. Hohmuth, A simple approach to the analysis of ion collision cascade in solids based on the shock wave model. Phys. Status Solidi (a) 75, 159–168 (1983). Analysis of heavy-ion sputtering based on the shock wave model. Phys. Status Solidi (a) 79, 395–401 (1983)
104.
Zurück zum Zitat E.G. Spencer, P.H. Schmidt, D.C. Joy, F.J. Sansalone, Ion-beam-deposited polycrystalline diamond-like films. Appl. Phys. Lett. 29, 118–120 (1976) E.G. Spencer, P.H. Schmidt, D.C. Joy, F.J. Sansalone, Ion-beam-deposited polycrystalline diamond-like films. Appl. Phys. Lett. 29, 118–120 (1976)
105.
Zurück zum Zitat Y. Lifshitz, S.R. Kasi, J.W. Rabalais, Subplantation model for film growth from hyperthermal species: application to diamond. Phys. Rev. Lett 62, 1290–1293 (1987). Subplantation model for film growth from hyperthermal species. Phy. Rev. B 41, 10468–10480 (1990) Y. Lifshitz, S.R. Kasi, J.W. Rabalais, Subplantation model for film growth from hyperthermal species: application to diamond. Phys. Rev. Lett 62, 12901293 (1987). Subplantation model for film growth from hyperthermal species. Phy. Rev. B 41, 10468–10480 (1990)
106.
Zurück zum Zitat H.-P. Kaukonen, R.M. Nieminen, Molecular-dynamics simulation of the growth of diamondlike films by energetic carbon-atom beams. Phys. Rev. Lett. 68, 620–623 (1992)CrossRef H.-P. Kaukonen, R.M. Nieminen, Molecular-dynamics simulation of the growth of diamondlike films by energetic carbon-atom beams. Phys. Rev. Lett. 68, 620–623 (1992)CrossRef
107.
Zurück zum Zitat H.J. Steffen, D. Marton J.W. Rabalais, Displacement energy threshold for Ne+ irradiation of graphite, Phys. Rev. Lett. 68, 1726–1729 (1992). J. Koike, D.M. Parkin, T.E. Mitchell, Displacement threshold energy for type IIa diamond. Appl. Phys. Lett. 60, 1450–1452 (1992) H.J. Steffen, D. Marton J.W. Rabalais, Displacement energy threshold for Ne+ irradiation of graphite, Phys. Rev. Lett. 68, 17261729 (1992). J. Koike, D.M. Parkin, T.E. Mitchell, Displacement threshold energy for type IIa diamond. Appl. Phys. Lett. 60, 1450–1452 (1992)
108.
Zurück zum Zitat N.A. Marks, D.R. McKienzie, B.A. Pailthorpe, Molecular-dynamics study of compressive stress generation. Phys. Rev. B 53, 4117–4127 (1996)CrossRef N.A. Marks, D.R. McKienzie, B.A. Pailthorpe, Molecular-dynamics study of compressive stress generation. Phys. Rev. B 53, 4117–4127 (1996)CrossRef
109.
Zurück zum Zitat S. Zhang, H.T. Johnson, G.J. Wagner, W.K. Liu, K.J. Hsia, Stress generation mechanisms in carbon thin films grown by ion-beam deposition. Acta Mater. 51, 5211–5222 (2003)CrossRef S. Zhang, H.T. Johnson, G.J. Wagner, W.K. Liu, K.J. Hsia, Stress generation mechanisms in carbon thin films grown by ion-beam deposition. Acta Mater. 51, 5211–5222 (2003)CrossRef
110.
Zurück zum Zitat R.A. Zuhr, B.R. Appleton, N. Herbots, B.C. Larson, T.S. Noggle, S.J. Pennycook, Low-temperture epitaxy of Si and Ge by direct ion beam deposition. J. Vac. Sci. Technol A 5, 2135–2139 (1987). R.A. Zuhr, S.J. Pennycook, T.S. Noggle, N. Herbots, T.E. Haynes, B.R. Appleton, Ion beam deposition in materials research. Nucl. Instrum. Methods Phys. Res. B 37/38, 16–21 (1989) R.A. Zuhr, B.R. Appleton, N. Herbots, B.C. Larson, T.S. Noggle, S.J. Pennycook, Low-temperture epitaxy of Si and Ge by direct ion beam deposition. J. Vac. Sci. Technol A 5, 21352139 (1987). R.A. Zuhr, S.J. Pennycook, T.S. Noggle, N. Herbots, T.E. Haynes, B.R. Appleton, Ion beam deposition in materials research. Nucl. Instrum. Methods Phys. Res. B 37/38, 16–21 (1989)
111.
Zurück zum Zitat K.G. Orrman-Rossiter, D. R. G. Mitchell, S.E. Donnelly, C.J. Rossouw, S.R. Glanvill, P.R. Miller, A.H. Al-Bayati, J.A. van den Berg, D.G. Armour, Evidence for competing growth phases in ion-beam-deposited epitaxial silicon films, Philos. Mag. Lett. 61, 311–318 (1990). K.J. Orrman-Rossiter, A.H. Al-Bayati, D.G. Armour, S.E. Donnely, J.A. van den Berg, Ion beam deposited epitaxial thin silicon films, Nucl. Instrum. Methods Phys. Res. B 59/60, 197–202 (1991) K.G. Orrman-Rossiter, D. R. G. Mitchell, S.E. Donnelly, C.J. Rossouw, S.R. Glanvill, P.R. Miller, A.H. Al-Bayati, J.A. van den Berg, D.G. Armour, Evidence for competing growth phases in ion-beam-deposited epitaxial silicon films, Philos. Mag. Lett. 61, 311318 (1990). K.J. Orrman-Rossiter, A.H. Al-Bayati, D.G. Armour, S.E. Donnely, J.A. van den Berg, Ion beam deposited epitaxial thin silicon films, Nucl. Instrum. Methods Phys. Res. B 59/60, 197–202 (1991)
112.
Zurück zum Zitat M. Matsuoka, S. Tohno, Ion beam epitaxy of silicon films in an ultrahigh vacuum using a sputtering-type metal ion source. J. Vac. Sci. Technol. A 13, 305–331 (1995)CrossRef M. Matsuoka, S. Tohno, Ion beam epitaxy of silicon films in an ultrahigh vacuum using a sputtering-type metal ion source. J. Vac. Sci. Technol. A 13, 305–331 (1995)CrossRef
113.
Zurück zum Zitat M.V.R. Murty, H.A. Atwater, A.J. Kellock, J.E.E. Baglin, Very low temperature (<400 °C) silicon molecular beam epitaxy: The role of low energy ion irradiation, Appl. Phys. Lett. 62, 2566–2568 (1993). M.V. R. Murty, H.A. Atwater, Crystal-state - amorphous-state transition in low-temperature silicon epitaxy. Phys. Rev. B 49, 8483–8486 (1994) M.V.R. Murty, H.A. Atwater, A.J. Kellock, J.E.E. Baglin, Very low temperature (<400 °C) silicon molecular beam epitaxy: The role of low energy ion irradiation, Appl. Phys. Lett. 62, 25662568 (1993). M.V. R. Murty, H.A. Atwater, Crystal-state - amorphous-state transition in low-temperature silicon epitaxy. Phys. Rev. B 49, 8483–8486 (1994)
114.
Zurück zum Zitat N.-E. Lee, G.A. Tomasch, J.E. Greene, Low-temperature Si(001) epitaxy using low-energy (< E> ≈ 18 eV) Si atoms. Appl. Phys. Lett. 63, 3236–3238 (1994)CrossRef N.-E. Lee, G.A. Tomasch, J.E. Greene, Low-temperature Si(001) epitaxy using low-energy (< E> ≈ 18 eV) Si atoms. Appl. Phys. Lett. 63, 3236–3238 (1994)CrossRef
115.
Zurück zum Zitat J.W. Rabalais, A.H. Al-Bayati, K.J. Boyd, D. Marton, J. Kulik, Z. Zhang, W.K. Chu, Ion-energy effects in silicon ion-beam epitaxy. Phys. Rev. B 53, 10781–10792 (1996)CrossRef J.W. Rabalais, A.H. Al-Bayati, K.J. Boyd, D. Marton, J. Kulik, Z. Zhang, W.K. Chu, Ion-energy effects in silicon ion-beam epitaxy. Phys. Rev. B 53, 10781–10792 (1996)CrossRef
116.
Zurück zum Zitat K.J. Boyd, D. Marton, J.W. Rabalais, S. Uhlmann, T. Frauenheim, Semiquantitative subplantation model for low energy ion interactions with surfaces. III. Ion beam homoepitaxy of Si, J. Vac. Sci. Technol. A 16, 463–471 (1998) K.J. Boyd, D. Marton, J.W. Rabalais, S. Uhlmann, T. Frauenheim, Semiquantitative subplantation model for low energy ion interactions with surfaces. III. Ion beam homoepitaxy of Si, J. Vac. Sci. Technol. A 16, 463–471 (1998)
117.
Zurück zum Zitat D. Marton, K.J. Boyd, J.W. Rabalais, Hyperthermal particle enhanced silicon epitaxy. Chem. Phys. Lett. 283, 215–220 (1998)CrossRef D. Marton, K.J. Boyd, J.W. Rabalais, Hyperthermal particle enhanced silicon epitaxy. Chem. Phys. Lett. 283, 215–220 (1998)CrossRef
118.
Zurück zum Zitat Z. Wang, E. Seebauer, Temperature-dependent energy thresholds for ion-stimulated defect formation in solids: effects of ion mass and adsorbate–substrate pairing, Surf. Sci. 601, 2453–2458 (2007). Z. Wang, E. Seebauer, Temperature-dependent energy thresholds for ion-stimulated defect formation in solids. Phys, Rev. Lett. 95, 015501 (2005) Z. Wang, E. Seebauer, Temperature-dependent energy thresholds for ion-stimulated defect formation in solids: effects of ion mass and adsorbate–substrate pairing, Surf. Sci. 601, 24532458 (2007). Z. Wang, E. Seebauer, Temperature-dependent energy thresholds for ion-stimulated defect formation in solids. Phys, Rev. Lett. 95, 015501 (2005)
119.
Zurück zum Zitat S.S. Todorov, H. Bu, K.J. Boyd, J.W. Rabalais, C.M. Gilmore, J.A. Sprague, Ion beam deposition of 107Ag(111) films on Ni(100). Surf. Sci. 429, 63–70 (1999)CrossRef S.S. Todorov, H. Bu, K.J. Boyd, J.W. Rabalais, C.M. Gilmore, J.A. Sprague, Ion beam deposition of 107Ag(111) films on Ni(100). Surf. Sci. 429, 63–70 (1999)CrossRef
120.
Zurück zum Zitat R.A. Zuhr, T.E. Hayes, M.D. Galloway, S. Tanaka, A. Yamada, I. Yamada, Formation of aluminium films on silicon by ion beam deposition. A comparison with ionized cluster beam deposition, Oak Ridge Nat. Laboratory Report CONF-900936 (1991) R.A. Zuhr, T.E. Hayes, M.D. Galloway, S. Tanaka, A. Yamada, I. Yamada, Formation of aluminium films on silicon by ion beam deposition. A comparison with ionized cluster beam deposition, Oak Ridge Nat. Laboratory Report CONF-900936 (1991)
121.
Zurück zum Zitat S. Shimizu, N. Sasaki, S. Ogata, O. Tsukakoshi, S. Seki, H. Yamakawa, Thin film growth using low-energy multi-ion beam deposition system, in Low Energy Ion Beam and Plasma Modification of Materials, ed. by M. Gorbatkin, J.M.E. Harper, J.R. McNeil, K. Miyake, Mater. Res. Soc., Symp. Proceed. Vol. 223 (1991) pp. 347–352 S. Shimizu, N. Sasaki, S. Ogata, O. Tsukakoshi, S. Seki, H. Yamakawa, Thin film growth using low-energy multi-ion beam deposition system, in Low Energy Ion Beam and Plasma Modification of Materials, ed. by M. Gorbatkin, J.M.E. Harper, J.R. McNeil, K. Miyake, Mater. Res. Soc., Symp. Proceed. Vol. 223 (1991) pp. 347–352
122.
Zurück zum Zitat R.A. Zuhr, S.J. Pennycook, T.E. Haynes, O.W. Holland, Metal silicides formed by direct ion beam deposition. Mater. Res. Soc. Symp. Proceed. 128, 47–54 (1988) R.A. Zuhr, S.J. Pennycook, T.E. Haynes, O.W. Holland, Metal silicides formed by direct ion beam deposition. Mater. Res. Soc. Symp. Proceed. 128, 47–54 (1988)
123.
Zurück zum Zitat A. Bousetta, A.H. Al Bayati, J.A. van den Berg, D.G. Armour, Structural and electrical properties of Co grown on Si (111) by low energy ion beam deposition. Appl. Surf. Sci. 56–58, 480–485 (1992) A. Bousetta, A.H. Al Bayati, J.A. van den Berg, D.G. Armour, Structural and electrical properties of Co grown on Si (111) by low energy ion beam deposition. Appl. Surf. Sci. 56–58, 480–485 (1992)
124.
Zurück zum Zitat O. Tsukakoshi, S. Shimizu, S. Ogata, N. Sasaki, H. Yamakawa, A high-current low-energy multi-ion beam deposition system. Nucl. Instr. Meth Phys. Res. B 55, 355–358 (1991)CrossRef O. Tsukakoshi, S. Shimizu, S. Ogata, N. Sasaki, H. Yamakawa, A high-current low-energy multi-ion beam deposition system. Nucl. Instr. Meth Phys. Res. B 55, 355–358 (1991)CrossRef
125.
Zurück zum Zitat T. Ohnishi, Y. Yoshida, Y. Hirofuji, H. lwasaki, Ta2O5 film formation by double ion beam method. Nucl. Instr. Meth. B 37/38, 850–853 (1989) T. Ohnishi, Y. Yoshida, Y. Hirofuji, H. lwasaki, Ta2O5 film formation by double ion beam method. Nucl. Instr. Meth. B 37/38, 850–853 (1989)
126.
Zurück zum Zitat S. Tamura, M. Hyouzho, K. Yokota, S. Katayama, Growth of crystalline GaAs films on Si substrates by Ga and As ion beams. Nucl. Instr. Meth. B 37(38), 862–865 (1989)CrossRef S. Tamura, M. Hyouzho, K. Yokota, S. Katayama, Growth of crystalline GaAs films on Si substrates by Ga and As ion beams. Nucl. Instr. Meth. B 37(38), 862–865 (1989)CrossRef
127.
Zurück zum Zitat Y. Morishita, S. Maruno, T. Isu, Y. Nomura, H. Ogata, Electrical and optical properties of InP grown by MBE using P+ ion beam. J. Cryst. Growth 88, 215–220 (1988)CrossRef Y. Morishita, S. Maruno, T. Isu, Y. Nomura, H. Ogata, Electrical and optical properties of InP grown by MBE using P+ ion beam. J. Cryst. Growth 88, 215–220 (1988)CrossRef
128.
Zurück zum Zitat A. Gottdang, K. Eich, A. Hassenbürger, W.H. Schulte, B. Cleff, D.J.W. Mous, R. Koudijs, G.F.A. van der Walle, J. Politiek, A dual source low-energy ion implantation system for use in silicon molecular beam epitaxy. Nucl. Instr. Meth in Phys. Res. B 55, 310–313 (1991)CrossRef A. Gottdang, K. Eich, A. Hassenbürger, W.H. Schulte, B. Cleff, D.J.W. Mous, R. Koudijs, G.F.A. van der Walle, J. Politiek, A dual source low-energy ion implantation system for use in silicon molecular beam epitaxy. Nucl. Instr. Meth in Phys. Res. B 55, 310–313 (1991)CrossRef
129.
Zurück zum Zitat T.E. Haynes, R.A. Zuhr, S.J. Pennycook, B.R. Appleton, Heteroepitxy of GaAs on Si and Ge using alternating, low-energy ion beams. Appl. Phys. Left. 54, 1439–1441 (1989)CrossRef T.E. Haynes, R.A. Zuhr, S.J. Pennycook, B.R. Appleton, Heteroepitxy of GaAs on Si and Ge using alternating, low-energy ion beams. Appl. Phys. Left. 54, 1439–1441 (1989)CrossRef
130.
Zurück zum Zitat S.P. Withrow, K.L. Moore, R.A. Zuhr, T.E. Haynes, Ion beam deposition of β-SiC layers onto α-SiC substrates. Vacuum 39, 1065–1068 (1989)CrossRef S.P. Withrow, K.L. Moore, R.A. Zuhr, T.E. Haynes, Ion beam deposition of β-SiC layers onto α-SiC substrates. Vacuum 39, 1065–1068 (1989)CrossRef
131.
Zurück zum Zitat J. Ahn, R.P.W. Lawson, K.M. Yoo, K.A. Stromsmoe, M.J. Brett, Deposition of metastable binary alloy thin films using sequential ion beams from a single source. Nucl. Instr. Meth in Phys. Res. B 17, 37–45 (1986)CrossRef J. Ahn, R.P.W. Lawson, K.M. Yoo, K.A. Stromsmoe, M.J. Brett, Deposition of metastable binary alloy thin films using sequential ion beams from a single source. Nucl. Instr. Meth in Phys. Res. B 17, 37–45 (1986)CrossRef
132.
Zurück zum Zitat Y. Yoshida, T. Ohnishi, T. Sekihara, Y. Hirofuji, Low-energy double-ion-beam deposition system, Jpn. J. App. Phys. 27, 140–143 (1988). Y. Yoshida, T. Ohnishi, Y. Hirofuji, H. Iwasaki, T. Ikeda, low-energy double ion-beam deposition of compound films. Nucl. Instr. Meth. in Phys. Res. B 37/38, 866–869 (1989) Y. Yoshida, T. Ohnishi, T. Sekihara, Y. Hirofuji, Low-energy double-ion-beam deposition system, Jpn. J. App. Phys. 27, 140143 (1988). Y. Yoshida, T. Ohnishi, Y. Hirofuji, H. Iwasaki, T. Ikeda, low-energy double ion-beam deposition of compound films. Nucl. Instr. Meth. in Phys. Res. B 37/38, 866–869 (1989)
133.
Zurück zum Zitat S. Maruno, Y. Morishita, T. Isu, Y. Nomura, H. Ogata, Growth mechanisms of molecular beam epitaxy of InP and GaAsxP1-x. Sci. 201, 335–344 (1988) S. Maruno, Y. Morishita, T. Isu, Y. Nomura, H. Ogata, Growth mechanisms of molecular beam epitaxy of InP and GaAsxP1-x. Sci. 201, 335–344 (1988)
134.
Zurück zum Zitat T. Matsumoto, M. Kiuchi, S. Sugimoto, S. Goto, Momentum effects of molecular ion beam in Sic crystal growth. Thin Solid Films 464–465, 103–106 (2004)CrossRef T. Matsumoto, M. Kiuchi, S. Sugimoto, S. Goto, Momentum effects of molecular ion beam in Sic crystal growth. Thin Solid Films 464–465, 103–106 (2004)CrossRef
135.
Zurück zum Zitat M. Mitsui, S. Nagaoka, T. Matsumoto, A. Nakajima, Soft-landing isolation of vanadium-benzene sandwich clusters on a room-temperature substrate using n-alkanethiolate self-assembled monolayer matrixes. J. Phys. Chem. B 110, 2968–2971 (2006) M. Mitsui, S. Nagaoka, T. Matsumoto, A. Nakajima, Soft-landing isolation of vanadium-benzene sandwich clusters on a room-temperature substrate using n-alkanethiolate self-assembled monolayer matrixes. J. Phys. Chem. B 110, 2968–2971 (2006)
136.
Zurück zum Zitat G.E. Johnson, J. Laskin, Preparation of surface organometallic catalysts by gas-phase ligand stripping and reactive landing of mass-selected ions. Chem. Eur. J. 16, 14433–14438 (2010)CrossRef G.E. Johnson, J. Laskin, Preparation of surface organometallic catalysts by gas-phase ligand stripping and reactive landing of mass-selected ions. Chem. Eur. J. 16, 14433–14438 (2010)CrossRef
137.
Zurück zum Zitat B. Gologan, Z. Takats, J. Alvarez, J.M. Wiseman, N. Talaty, Z. Ouyang, R.G. Cooks, Ion soft-landing into liquids: protein identification, separation, and purification with retention of biological activity. J. Am. Soc. Mass Spectrom. 15, 1874–1884 (2004)CrossRef B. Gologan, Z. Takats, J. Alvarez, J.M. Wiseman, N. Talaty, Z. Ouyang, R.G. Cooks, Ion soft-landing into liquids: protein identification, separation, and purification with retention of biological activity. J. Am. Soc. Mass Spectrom. 15, 1874–1884 (2004)CrossRef
138.
Zurück zum Zitat T.A. Blake, O.Y. Zheng, J.M. Wiseman, Z. Takats, A.J. Guymon, S. Kothari, R.G. Cooks, Preparative linear ion trap mass spectrometer for separation and collection of purified proteins and peptides in arrays using ion soft landing. Anal. Chem. 76, 6293–6305 (2004)CrossRef T.A. Blake, O.Y. Zheng, J.M. Wiseman, Z. Takats, A.J. Guymon, S. Kothari, R.G. Cooks, Preparative linear ion trap mass spectrometer for separation and collection of purified proteins and peptides in arrays using ion soft landing. Anal. Chem. 76, 6293–6305 (2004)CrossRef
139.
Zurück zum Zitat M. Volny, W.T. Elam, A. Branca, B.D. Ratner, F. Turecek, Preparative soft and reactive landing of multiply charged protein ions on a plasma-treated metal surface. Anal. Chem. 77, 4890–4896 (2005)CrossRef M. Volny, W.T. Elam, A. Branca, B.D. Ratner, F. Turecek, Preparative soft and reactive landing of multiply charged protein ions on a plasma-treated metal surface. Anal. Chem. 77, 4890–4896 (2005)CrossRef
140.
Zurück zum Zitat V.A. Mikhailov, T.H. Mize, J.L.P. Benesch, C.V. Robinson, Mass-selective soft-landing of protein assemblies with controlled landing energies. Anal. Chem. 86, 8321–8328 (2014)CrossRef V.A. Mikhailov, T.H. Mize, J.L.P. Benesch, C.V. Robinson, Mass-selective soft-landing of protein assemblies with controlled landing energies. Anal. Chem. 86, 8321–8328 (2014)CrossRef
141.
Zurück zum Zitat Z. Deng, N. Thontasen, N. Malinowski, G. Rinke, L. Harnau, S. Rauschenbach, K. Kern, A close look at proteins: submolecular resolution of two- and three-dimensionally folded cytochrome at surfaces. Nano Lett. 12, 2452–2458 (2012)CrossRef Z. Deng, N. Thontasen, N. Malinowski, G. Rinke, L. Harnau, S. Rauschenbach, K. Kern, A close look at proteins: submolecular resolution of two- and three-dimensionally folded cytochrome at surfaces. Nano Lett. 12, 2452–2458 (2012)CrossRef
142.
Zurück zum Zitat S. Rauschenbach, F.L. Stadler, E. Lunedei, N. Malinowski, S. Koltsov, G. Costantini, K. Kern, Electrospray ion beam deposition of clusters and biomolecules. Small 2, 540–547 (2006)CrossRef S. Rauschenbach, F.L. Stadler, E. Lunedei, N. Malinowski, S. Koltsov, G. Costantini, K. Kern, Electrospray ion beam deposition of clusters and biomolecules. Small 2, 540–547 (2006)CrossRef
143.
Zurück zum Zitat X.L. Yang, P.S. Mayer, F. Turecek, Preparative separation of a multicomponent peptide mixture by mass spectrometry. J. Mass Spectrom. 41, 256–262 (2006)CrossRef X.L. Yang, P.S. Mayer, F. Turecek, Preparative separation of a multicomponent peptide mixture by mass spectrometry. J. Mass Spectrom. 41, 256–262 (2006)CrossRef
144.
Zurück zum Zitat O. Hadjar, P. Wang, J.H. Futrell, J. Laskin, Effect of the surface on charge reduction and desorption kinetics of soft landed peptide ions. J. Am. Soc. Mass Spectrom. 20, 901–906 (2009)CrossRef O. Hadjar, P. Wang, J.H. Futrell, J. Laskin, Effect of the surface on charge reduction and desorption kinetics of soft landed peptide ions. J. Am. Soc. Mass Spectrom. 20, 901–906 (2009)CrossRef
145.
Zurück zum Zitat J. Laskin, P. Wang, O. Hadjar, Soft-landing of peptide ions onto self-assembled monolayer surfaces: an overview. Phys. Chem. Chem. Phys. 10, 1079–1090 (2008)CrossRef J. Laskin, P. Wang, O. Hadjar, Soft-landing of peptide ions onto self-assembled monolayer surfaces: an overview. Phys. Chem. Chem. Phys. 10, 1079–1090 (2008)CrossRef
146.
Zurück zum Zitat S. Rauschenbach, G. Rinke, R. Gutzler, S. Abb, A. Albarghash, D. Le, T.S. Rahman, M. pDürr, L. Harnau, K. Kern, Two-dimensional folding of polypeptides into molecular nanostructures at surfaces. ACS Nano 11, 2420–2427 (2017) S. Rauschenbach, G. Rinke, R. Gutzler, S. Abb, A. Albarghash, D. Le, T.S. Rahman, M. pDürr, L. Harnau, K. Kern, Two-dimensional folding of polypeptides into molecular nanostructures at surfaces. ACS Nano 11, 2420–2427 (2017)
147.
Zurück zum Zitat S. Abb, L. Harnau, R. Gutzler, S. Rauschenbach, K. Kern, Two-dimensional honeycomb network through sequence-controlled self-assembly of oligopeptides. Nature Comm. 7, 10335 (2016)CrossRef S. Abb, L. Harnau, R. Gutzler, S. Rauschenbach, K. Kern, Two-dimensional honeycomb network through sequence-controlled self-assembly of oligopeptides. Nature Comm. 7, 10335 (2016)CrossRef
148.
Zurück zum Zitat B.B. Feng, D.S. Wunschel, C.D. Masselon, L. Pasa-Tolic, R.D. Smith, Retrieval of DNA using softlanding after mass analysis by ESI-FTICR for enzymatic manipulation. J. Am. Chem. Soc. 121, 8961–8962 (1999)CrossRef B.B. Feng, D.S. Wunschel, C.D. Masselon, L. Pasa-Tolic, R.D. Smith, Retrieval of DNA using softlanding after mass analysis by ESI-FTICR for enzymatic manipulation. J. Am. Chem. Soc. 121, 8961–8962 (1999)CrossRef
149.
Zurück zum Zitat G. Siuzdak, B. Bothner, M. Yeager, C. Brugidou, C.M. Fauquet, K. Hoey, C.-M. Change, Mass spectrometry and viral analysis. Chem. Biol. 3, 45–48 (1996)CrossRef G. Siuzdak, B. Bothner, M. Yeager, C. Brugidou, C.M. Fauquet, K. Hoey, C.-M. Change, Mass spectrometry and viral analysis. Chem. Biol. 3, 45–48 (1996)CrossRef
150.
Zurück zum Zitat S.D. Fuerstenau, W.H. Benner, J.J. Thomas, C. Brugidou, B. Bothner, G. Siuzdak, Mass spectrometry of an intact virus. Angew. Chem. 113, 559–562 (2001)CrossRef S.D. Fuerstenau, W.H. Benner, J.J. Thomas, C. Brugidou, B. Bothner, G. Siuzdak, Mass spectrometry of an intact virus. Angew. Chem. 113, 559–562 (2001)CrossRef
151.
Zurück zum Zitat Y. Tani, S. Kobayashi, H. Kawazoe, Characterization of electrospray ion-beam-deposited CdSe/ZnS quantum dot thin films from a colloidal solution. J. Vac. Sci. Technol. A 26, 1058–1061 (2008)CrossRef Y. Tani, S. Kobayashi, H. Kawazoe, Characterization of electrospray ion-beam-deposited CdSe/ZnS quantum dot thin films from a colloidal solution. J. Vac. Sci. Technol. A 26, 1058–1061 (2008)CrossRef
152.
Zurück zum Zitat K. Anggara, Y. Zhu, G Fittolani, Y. Yu, T. Tyrikos-Ergas, M Delbianco, S. Rauschenbach, S. Abb, K. Kern, Identifying the origin of local flexibility in a carbohydrate polymer. Proceed. Nat. Acad. Sci. (PNAS) 118, 2102168118 (2021) K. Anggara, Y. Zhu, G Fittolani, Y. Yu, T. Tyrikos-Ergas, M Delbianco, S. Rauschenbach, S. Abb, K. Kern, Identifying the origin of local flexibility in a carbohydrate polymer. Proceed. Nat. Acad. Sci. (PNAS) 118, 2102168118 (2021)
153.
Zurück zum Zitat X. Wu, M. Delbianco, K. Anggara, T. Michnowicz, A. Pardo-Vargas, P. Bharate, S. Sen, M. Pristl, S. Rauschenbach, U. Schickum, S. Abb, P.H. Seeberger, K. Kern, Imaging single glycans. Nature 582, 375–378 (2020)CrossRef X. Wu, M. Delbianco, K. Anggara, T. Michnowicz, A. Pardo-Vargas, P. Bharate, S. Sen, M. Pristl, S. Rauschenbach, U. Schickum, S. Abb, P.H. Seeberger, K. Kern, Imaging single glycans. Nature 582, 375–378 (2020)CrossRef
154.
Zurück zum Zitat S. Abb, N. Tarrat, J. Cortés, B. Andriyevsky, L. Harnau, J.C. Schön, S. Rauschenbach, K. Kern, Carbohydrate self-assembly at surfaces: STM imaging of sucrose conformation and ordering on Cu (100). Angew. Chem. 131, 8424–8428 (2019) S. Abb, N. Tarrat, J. Cortés, B. Andriyevsky, L. Harnau, J.C. Schön, S. Rauschenbach, K. Kern, Carbohydrate self-assembly at surfaces: STM imaging of sucrose conformation and ordering on Cu (100). Angew. Chem. 131, 8424–8428 (2019)
155.
Zurück zum Zitat S. Banerjee, S. Mazumdar, Electrospray ionization mass spectrometry: A technique to access the information beyond the molecular weight of the analyte. Inter. J. Analyt. Chem. 2012, 282574 (2012) S. Banerjee, S. Mazumdar, Electrospray ionization mass spectrometry: A technique to access the information beyond the molecular weight of the analyte. Inter. J. Analyt. Chem. 2012, 282574 (2012)
156.
Zurück zum Zitat J.B. Fenn, M. Mann, C.K. Meng, S.F. Wong, C.M. Whitehouse, Electrospray ionization for mass spectrometry of large biomolecules. Science 246, 64–71 (1989)CrossRef J.B. Fenn, M. Mann, C.K. Meng, S.F. Wong, C.M. Whitehouse, Electrospray ionization for mass spectrometry of large biomolecules. Science 246, 64–71 (1989)CrossRef
157.
Zurück zum Zitat G. Taylor, Disintegration of water drops in an electric field. Proceed. Royal Soc. London, A 280, 383–397 (1964) G. Taylor, Disintegration of water drops in an electric field. Proceed. Royal Soc. London, A 280, 383–397 (1964)
158.
Zurück zum Zitat P. Kebarle, L. Tang, From ions in solution to ions in the gas phase: the mechanism of electrospray mass spectrometry. Analyt. Chem. 65, 972A-986A (1993) P. Kebarle, L. Tang, From ions in solution to ions in the gas phase: the mechanism of electrospray mass spectrometry. Analyt. Chem. 65, 972A-986A (1993)
159.
Zurück zum Zitat P. Kebarle, M. Peschke, On the mechanisms by which the charged droplets produced by electrospray lead to gas phase ions. Analyt. Chim. Acta 406, 11–35 (2000)CrossRef P. Kebarle, M. Peschke, On the mechanisms by which the charged droplets produced by electrospray lead to gas phase ions. Analyt. Chim. Acta 406, 11–35 (2000)CrossRef
160.
Zurück zum Zitat L. Konermann, E. Ahadi, A.D. Rodriguez, S. Vahidi, Unraveling the mechanism of electrospray ionization. Anal. Chem. 85, 2–9 (2013)CrossRef L. Konermann, E. Ahadi, A.D. Rodriguez, S. Vahidi, Unraveling the mechanism of electrospray ionization. Anal. Chem. 85, 2–9 (2013)CrossRef
161.
Zurück zum Zitat S. Rauschenbach, Electrospray ion beam deposition and mass spectroscopy of nonvolatile molecules and nanomaterials, Dissertation, École Polytechnique Fédérale de Lausanne (2008) S. Rauschenbach, Electrospray ion beam deposition and mass spectroscopy of nonvolatile molecules and nanomaterials, Dissertation, École Polytechnique Fédérale de Lausanne (2008)
162.
Zurück zum Zitat O. Hadjar, P. Wang, J.H. Futrell, Y. Dessiaterik, Z. Zhu, J.P. Cowin, M.J. Iedema, J. Laskin, Design and performance of an instrument for soft landing of biomolecular ions on surfaces. Analy. Chem. 79, 6566–6574 (2007)CrossRef O. Hadjar, P. Wang, J.H. Futrell, Y. Dessiaterik, Z. Zhu, J.P. Cowin, M.J. Iedema, J. Laskin, Design and performance of an instrument for soft landing of biomolecular ions on surfaces. Analy. Chem. 79, 6566–6574 (2007)CrossRef
163.
Zurück zum Zitat K.D.D. Gunaratne, V. Prabhakaran, Y.M. Ibrahim, R.V. Norheim, G.E. Johnson, J. Laskin, Design and performance of high-flux electrospray ionization source for ion soft landing. Analyst 140, 2957–2963 (2015)CrossRef K.D.D. Gunaratne, V. Prabhakaran, Y.M. Ibrahim, R.V. Norheim, G.E. Johnson, J. Laskin, Design and performance of high-flux electrospray ionization source for ion soft landing. Analyst 140, 2957–2963 (2015)CrossRef
164.
Zurück zum Zitat Y.M. Warneke, M.E. Belov, G.A. Anderson, Design and performance of a dual-polarity instrument for ion soft landing. J. Laskin, Anal. Chem. 91, 5904–5912 (2019) Y.M. Warneke, M.E. Belov, G.A. Anderson, Design and performance of a dual-polarity instrument for ion soft landing. J. Laskin, Anal. Chem. 91, 5904–5912 (2019)
165.
Zurück zum Zitat G.E. Johnson, D. Gunaratne, J. Laskin, Soft- and reactive landings of ions onto surfaces: concepts and applications. Mass Spectrom. Rev. 35, 439–479 (2016)CrossRef G.E. Johnson, D. Gunaratne, J. Laskin, Soft- and reactive landings of ions onto surfaces: concepts and applications. Mass Spectrom. Rev. 35, 439–479 (2016)CrossRef
166.
Zurück zum Zitat J. Warneke, M.E. McBriarty, S.L. Riechers, S. China, M.H. Engelhard, E. Aprá, R.P. Young, N.M. Washton, C. Jenne, G.E. Johnson, J. Laskin, Self-organizing layers from complex molecular anions. Nature Comm. 9, 1889 (2018)CrossRef J. Warneke, M.E. McBriarty, S.L. Riechers, S. China, M.H. Engelhard, E. Aprá, R.P. Young, N.M. Washton, C. Jenne, G.E. Johnson, J. Laskin, Self-organizing layers from complex molecular anions. Nature Comm. 9, 1889 (2018)CrossRef
167.
Zurück zum Zitat H. Usui, I. Yamada, T. Takagi, Anthracene and polyethylene thin-film depositions by ionized cluster beam. J. Vac. Sci. Technol. A 4, 52–60 (1986)CrossRef H. Usui, I. Yamada, T. Takagi, Anthracene and polyethylene thin-film depositions by ionized cluster beam. J. Vac. Sci. Technol. A 4, 52–60 (1986)CrossRef
168.
Zurück zum Zitat Qi, L., Sinnott, S.B.: Generation of 3D hydrocarbon thin films via organic molecular cluster collisions, Sur. Sci. 398, 195–202 (1998). L. Qi, W.L. Young, S.B. Sinnott, Effect of surface reactivity on the nucleation of hydrocarbon thin films through molecular-cluster beam deposition. Sur Sci. 426, 83–91 (1999) Qi, L., Sinnott, S.B.: Generation of 3D hydrocarbon thin films via organic molecular cluster collisions, Sur. Sci. 398, 195–202 (1998). L. Qi, W.L. Young, S.B. Sinnott, Effect of surface reactivity on the nucleation of hydrocarbon thin films through molecular-cluster beam deposition. Sur Sci. 426, 83–91 (1999)
169.
Zurück zum Zitat S. Rauschenbach, G. Rinke, N. Malinowski, R.T. Weitz, R. Dinnebier, N. Thontasen, Z. Deng,, T. Lutz,, P.M. de Ameida Rollo, G. Costantini, L. Harnau, K. Kern, Crystalline inverted membranes grown on surfaces by electrospray ion beam deposition in vacuum. Adv. Mater. 24, 2761–2767 (2014) S. Rauschenbach, G. Rinke, N. Malinowski, R.T. Weitz, R. Dinnebier, N. Thontasen, Z. Deng,, T. Lutz,, P.M. de Ameida Rollo, G. Costantini, L. Harnau, K. Kern, Crystalline inverted membranes grown on surfaces by electrospray ion beam deposition in vacuum. Adv. Mater. 24, 2761–2767 (2014)
170.
Zurück zum Zitat S.-S. Jester, D. Löffler, P. Weis, A. Böttcher, M.M. Kappes, Morphology of Cn thin films (50 ≤ n ≤ 60) on graphite: Inference of energy dissipation during hyperthermal deposition. Surf. Sci. 603, 1863–1872 (2009)CrossRef S.-S. Jester, D. Löffler, P. Weis, A. Böttcher, M.M. Kappes, Morphology of Cn thin films (50 ≤ n ≤ 60) on graphite: Inference of energy dissipation during hyperthermal deposition. Surf. Sci. 603, 1863–1872 (2009)CrossRef
171.
Zurück zum Zitat A. Böttcher, P. Weis, S.-S. Jester, D. Löffler, A. Bihlmeier, W. Klopper, M.M. Kappes, Solid C58 films. Phys. Chem. Chem. Phys. 7, 2816–2820 (2005)CrossRef A. Böttcher, P. Weis, S.-S. Jester, D. Löffler, A. Bihlmeier, W. Klopper, M.M. Kappes, Solid C58 films. Phys. Chem. Chem. Phys. 7, 2816–2820 (2005)CrossRef
172.
Zurück zum Zitat H.E. Fransworth, R.E. Schlier, T.H. George, R.M. Burger, Ion bombardment-cleaning of germanium and titanium as determined by low-energy electron diffraction. J. Appl. Phys. 26, 252–253 (1956)CrossRef H.E. Fransworth, R.E. Schlier, T.H. George, R.M. Burger, Ion bombardment-cleaning of germanium and titanium as determined by low-energy electron diffraction. J. Appl. Phys. 26, 252–253 (1956)CrossRef
173.
Zurück zum Zitat H. Lüth, Solid Surfaces (Springer, Heidelberg, Interfaces and Thin Films, 2010) H. Lüth, Solid Surfaces (Springer, Heidelberg, Interfaces and Thin Films, 2010)
174.
Zurück zum Zitat H.R. Kaufman, J.M.E. Harper, Ion doses for low-energy ion-assist applications. J. Vac. Sci. Technol. A 22, 221–224 (2004)CrossRef H.R. Kaufman, J.M.E. Harper, Ion doses for low-energy ion-assist applications. J. Vac. Sci. Technol. A 22, 221–224 (2004)CrossRef
175.
Zurück zum Zitat N. Razek, A. Schindler, B. Rauschenbach, UHV-Direct bonding of semiconductor wafers at room temperature using hydrogen ion beam surfaces cleaning, Proceed. ECS Meeting 2005, paper MA2005-01, 508.N. Razek, K. Otte, T. Chassé, D. Hirsch, A. Schindler, F. Frost, B. Rauschenbach, GaAs surface cleaning by low energy hydrogen ion beam treatment. J. Vac. Sci. Technol. A 20, 1492–1497 (2002) N. Razek, A. Schindler, B. Rauschenbach, UHV-Direct bonding of semiconductor wafers at room temperature using hydrogen ion beam surfaces cleaning, Proceed. ECS Meeting 2005, paper MA2005-01, 508.N. Razek, K. Otte, T. Chassé, D. Hirsch, A. Schindler, F. Frost, B. Rauschenbach, GaAs surface cleaning by low energy hydrogen ion beam treatment. J. Vac. Sci. Technol. A 20, 1492–1497 (2002)
176.
Zurück zum Zitat U.B. Sharopov, K. Kaur, M.K. Kurbanov, D.S. Saidov, E.T. Juraev, M.M. Sharipov, Controlling the low-temperature ionic purification of a silicon surface by electron spectroscopy. Silicon 14, 4661–4667 (2022). U.B. Sharopov, K. Kaur, M.K. Kurbanov, D.S. Saidov, E.T. Juraev, M.M. Sharipov, Controlling the low-temperature ionic purification of a silicon surface by electron spectroscopy. Silicon 14, 4661–4667 (2022).
177.
Zurück zum Zitat S. Mohajerzadeh, C.R. Selvakumar, D.E. Brodiet, M.D. Robertson, J.M. Corbett, Study of in-situ surface cleaning for Si and SiGe epitaxy on Si with a novel ion beam vapor/assisted deposition technique. Progr. Surf. Sci. 50, 347–356 (1995)CrossRef S. Mohajerzadeh, C.R. Selvakumar, D.E. Brodiet, M.D. Robertson, J.M. Corbett, Study of in-situ surface cleaning for Si and SiGe epitaxy on Si with a novel ion beam vapor/assisted deposition technique. Progr. Surf. Sci. 50, 347–356 (1995)CrossRef
178.
Zurück zum Zitat P. Rabinzohn, G. Gautherin, B. Agius, C. Cohen, Cleaning of Si and GaAs crystal surfaces by ion bombardment in the 50–1500 eV range. J. Electrochem. Soc. 131, 905–914 (1984) P. Rabinzohn, G. Gautherin, B. Agius, C. Cohen, Cleaning of Si and GaAs crystal surfaces by ion bombardment in the 50–1500 eV range. J. Electrochem. Soc. 131, 905–914 (1984)
179.
Zurück zum Zitat l. Bello, W.H. Chang, W.M. Lau, Mechanism of cleaning and etching Si surfaces with low energy chlorine ion bombardment. J. Appl. Phys. 75, 3092–3097 (1994) l. Bello, W.H. Chang, W.M. Lau, Mechanism of cleaning and etching Si surfaces with low energy chlorine ion bombardment. J. Appl. Phys. 75, 3092–3097 (1994)
180.
Zurück zum Zitat J.H. Comfort, L.M. Garverick, R. Reif, Silicon surface cleaning by low dose argon-ion bombardment for low temperature (750°C) epitaxial silicon deposition. I. Process considerations. J. Appl. Phys. 62, 3388–3397 (1987) J.H. Comfort, L.M. Garverick, R. Reif, Silicon surface cleaning by low dose argon-ion bombardment for low temperature (750°C) epitaxial silicon deposition. I. Process considerations. J. Appl. Phys. 62, 3388–3397 (1987)
181.
Zurück zum Zitat T. Choudhury, S. Saied, J.L. Sullivan, A.M. Abbot, Reduction of oxides of iron, cobalt, titanium and niobium by low-energy ion bombardment. J. Phys. D: Appl. Phys. 22, 1185–1195 (1989)CrossRef T. Choudhury, S. Saied, J.L. Sullivan, A.M. Abbot, Reduction of oxides of iron, cobalt, titanium and niobium by low-energy ion bombardment. J. Phys. D: Appl. Phys. 22, 1185–1195 (1989)CrossRef
182.
Zurück zum Zitat A.G. Mathewson, Ion induced desorption coefficients for titanium alloy, pure aluminum and stainless steel, Report CERN-ISR-VA/76-5 (1976) A.G. Mathewson, Ion induced desorption coefficients for titanium alloy, pure aluminum and stainless steel, Report CERN-ISR-VA/76-5 (1976)
183.
Zurück zum Zitat M.P. Lozano, Ion-induced desorption yield measurements from copper and aluminum. Vacuum 67, 339–345 (2002)CrossRef M.P. Lozano, Ion-induced desorption yield measurements from copper and aluminum. Vacuum 67, 339–345 (2002)CrossRef
184.
Zurück zum Zitat N. Hilleret, Influence de la nature des ions incidents sur les taux de desorption par bombardement ionique de molécules adsorbées sur une surface d’acier inoxydable, Report CERN-ISR-VA/78-10 (1978) N. Hilleret, Influence de la nature des ions incidents sur les taux de desorption par bombardement ionique de molécules adsorbées sur une surface d’acier inoxydable, Report CERN-ISR-VA/78-10 (1978)
185.
Zurück zum Zitat M.-H. Achard, Desorption des gaz induite par des électrons et des ions de l’acier inoxydable, du cuivre OFHC, du titane et de l’aluminium purs, Report CERN-ISR-VA/76-34 (1976) M.-H. Achard, Desorption des gaz induite par des électrons et des ions de l’acier inoxydable, du cuivre OFHC, du titane et de l’aluminium purs, Report CERN-ISR-VA/76-34 (1976)
186.
Zurück zum Zitat M.-H. Achard, R. Calder, A. Mathewson, The effect of bakeout temperature on the electron and ion induced gas desorption coefficients of some technological materials. Vacuum 29, 53–65 (1979)CrossRef M.-H. Achard, R. Calder, A. Mathewson, The effect of bakeout temperature on the electron and ion induced gas desorption coefficients of some technological materials. Vacuum 29, 53–65 (1979)CrossRef
187.
Zurück zum Zitat D.G. Armour, P. Bailey, G. Sharples, The use of ion beams in thin film deposition. Vacuum 36, 769–775 (1986)CrossRef D.G. Armour, P. Bailey, G. Sharples, The use of ion beams in thin film deposition. Vacuum 36, 769–775 (1986)CrossRef
188.
Zurück zum Zitat H.F. Winters, P. Sigmund, Sputtering of chemisorbed gas (nitrogen on tungsten) by low-energy ions. J. Appl. Phys. 45, 4760–4766 (1974)CrossRef H.F. Winters, P. Sigmund, Sputtering of chemisorbed gas (nitrogen on tungsten) by low-energy ions. J. Appl. Phys. 45, 4760–4766 (1974)CrossRef
189.
Zurück zum Zitat E. Taglauer, Surface cleaning using sputtering. Appl. Phys. A 51, 238–251 (1990)CrossRef E. Taglauer, Surface cleaning using sputtering. Appl. Phys. A 51, 238–251 (1990)CrossRef
190.
Zurück zum Zitat G. Carter, D.G. Armour, The interaction of low energy ion beams with surfaces. Thin Solid Films 80, 13–29 (1981)CrossRef G. Carter, D.G. Armour, The interaction of low energy ion beams with surfaces. Thin Solid Films 80, 13–29 (1981)CrossRef
191.
Zurück zum Zitat H. Niehus, W. Heiland, E. Taglauer, Low-energy scattering at surfaces. Suf. Sci. Rep. 17, 213–303 (1993)CrossRef H. Niehus, W. Heiland, E. Taglauer, Low-energy scattering at surfaces. Suf. Sci. Rep. 17, 213–303 (1993)CrossRef
192.
Zurück zum Zitat H.F. Winters, E. Taglauer, Sputtering of chemisorbed nitrogen from single-crystal planes of tungsten and molybdenum. Phys. Rev. B 35, 2174–2187 (1987)CrossRef H.F. Winters, E. Taglauer, Sputtering of chemisorbed nitrogen from single-crystal planes of tungsten and molybdenum. Phys. Rev. B 35, 2174–2187 (1987)CrossRef
193.
Zurück zum Zitat Morita, K., Mori, H., Horino, Y.: Partial cross-section for sputtering of monolayer impurity atoms on metal surfaces. Nucl. Instr. Meth. B 1, 407–410 8 (1986) Morita, K., Mori, H., Horino, Y.: Partial cross-section for sputtering of monolayer impurity atoms on metal surfaces. Nucl. Instr. Meth. B 1, 407410 8 (1986)
194.
Zurück zum Zitat M. Inoue, S. Tanaka, J. Yukava, K. Morita, Ion impact desorption of metal atoms from Si(111)-√3 x√3 -metal surfaces. Nucl. Instr. Meth. B 58, 411–416 (1991)CrossRef M. Inoue, S. Tanaka, J. Yukava, K. Morita, Ion impact desorption of metal atoms from Si(111)-√3 x√3 -metal surfaces. Nucl. Instr. Meth. B 58, 411–416 (1991)CrossRef
195.
Zurück zum Zitat E. Taglauer, W. Heiland, R.J. MacDonald, The study of sputtered effects in oxides and metal-adsorbed-gas systems using combined analytical techniques. Surf. Sci. 90, 661–675 (1979)CrossRef E. Taglauer, W. Heiland, R.J. MacDonald, The study of sputtered effects in oxides and metal-adsorbed-gas systems using combined analytical techniques. Surf. Sci. 90, 661–675 (1979)CrossRef
196.
Zurück zum Zitat A. Benninghoven, Die Analyse monomolekularer Festkörperoberflächenschichten mit Hilfe der Sekundärionenemission. Z. Physik 230, 403–417 (1970)CrossRef A. Benninghoven, Die Analyse monomolekularer Festkörperoberflächenschichten mit Hilfe der Sekundärionenemission. Z. Physik 230, 403–417 (1970)CrossRef
197.
Zurück zum Zitat Taglauer, E.: Desorption, in data compendium for plasma-surface interactions. In: Langley, R.A., Bohdansky, J., Eckstein, W., Mioduszewski, P., Roth, J., Taglauer, E., Thomas, E.W., Verbeek, H., Wilson, K.L., (eds.) Nucl. Fusion 24, 43–54 (1984) Taglauer, E.: Desorption, in data compendium for plasma-surface interactions. In: Langley, R.A., Bohdansky, J., Eckstein, W., Mioduszewski, P., Roth, J., Taglauer, E., Thomas, E.W., Verbeek, H., Wilson, K.L., (eds.) Nucl. Fusion 24, 43–54 (1984)
198.
Zurück zum Zitat T. Sikola, L. Dittrichova, J. Spousta, J. Zlamal, J. Stefka, Cleaning of metal surfaces by a broad beam ion source. Nucl. Instr. Meth. Phys. Res. B 127(128), 865–868 (1997)CrossRef T. Sikola, L. Dittrichova, J. Spousta, J. Zlamal, J. Stefka, Cleaning of metal surfaces by a broad beam ion source. Nucl. Instr. Meth. Phys. Res. B 127(128), 865–868 (1997)CrossRef
Metadaten
Titel
Ion Beam Deposition and Cleaning
verfasst von
Bernd Rauschenbach
Copyright-Jahr
2022
DOI
https://doi.org/10.1007/978-3-030-97277-6_9

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