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Zeitschrift

Journal of Computational Electronics

Journal of Computational Electronics 2/2018

Ausgabe 2/2018

Inhaltsverzeichnis ( 41 Artikel )

12.03.2018 | Ausgabe 2/2018

Exact analytical solution to the electron density for monolayer and bilayer graphene

Jerry P. Selvaggi

02.04.2018 | Ausgabe 2/2018

Tuning electronic, magnetic, and transport properties of blue phosphorene by substitutional doping: a first-principles study

Fatemeh Safari, Morteza Fathipour, Arash Yazdanpanah Goharrizi

05.03.2018 | Ausgabe 2/2018

Strain engineering of band dispersion and dielectric response of monolayer and bilayer AlN

Somayeh Behzad

14.02.2018 | Ausgabe 2/2018

On the electronic and transport properties of semiconducting carbon nanotubes: the role of -defects

D. Teich, M. Claus, G. Seifert

03.02.2018 | Ausgabe 2/2018

Graphene nanoribbon photodetectors based on an asymmetric potential barrier: a new concept and a new structure

Mohammad H. Zarei, Mohammad J. Sharifi

05.02.2018 | Ausgabe 2/2018

FDTD algorithm to achieve absolute stability in performance analysis of SWCNT interconnects

C. Venkataiah, K. Satyaprasad, T. Jayachandra Prasad

03.02.2018 | Ausgabe 2/2018

Effects of impurity and cross-sectional shape on entropy of quantum wires

R. Khordad, H. R. Rastegar Sedehi, H. Bahramiyan

27.01.2018 | Ausgabe 2/2018

Modeling and simulation of a graphene-based three-terminal junction rectifier

Ankur Garg, Neelu Jain, Arun Kumar Singh

14.02.2018 | Ausgabe 2/2018

A fast method for process reliability analysis of CNFET-based digital integrated circuits

Fereshteh Saeedi, Behnam Ghavami, Mohsen Raji

14.02.2018 | Ausgabe 2/2018

First-principles study of electron transport in azulene molecular junction: effect of electrode material on electrical rectification behavior

C. Preferencial Kala, D. John Thiruvadigal

28.03.2018 | Ausgabe 2/2018

Electronic signature of single-molecular device based on polyacetylene derivative

Alexandre de S. Oliveira, Antonio T. M. Beirão, Shirsley S. da Silva, Jordan Del Nero

02.02.2018 | Ausgabe 2/2018

Time evolution of current density in conducting single-walled carbon nanotubes

M. J. Majid, M. H. Alaa

05.03.2018 | Ausgabe 2/2018

Spin-dependent transport in a multifunctional spintronic device with graphene nanoribbon electrodes

Xiaoxiao Han, Jingjuan Yang, Peipei Yuan, Baoan Bian, Haifeng Shi, Yuqiang Ding

26.03.2018 | Ausgabe 2/2018

The effect of sharp-corner emendation of irregular FinFETs on electrothermal characteristics

Fa. Karimi, Ali A. Orouji

23.02.2018 | Ausgabe 2/2018

On the accuracy of reduced-order integrated circuit simulators for computing the heat production on electronic components

B. Emek Abali, Tarek I. Zohdi

02.02.2018 | Ausgabe 2/2018

Design and structural optimization of junctionless FinFET with Gaussian-doped channel

Shalu Kaundal, Ashwani K. Rana

03.04.2018 | Ausgabe 2/2018

Investigation of a novel SOI LDMOS using p+ buried islands in the drift region by numerical simulations

Jianmei Lei, Shengdong Hu, Dong Yang, Ye Huang, Qi Yuan, Jingwei Guo, Linghui Zeng, Siqi Wang, Xuan Yang

26.03.2018 | Ausgabe 2/2018

An improved model to assess temperature-dependent DC characteristics of submicron GaN HEMTs

M. N. Khan, U. F. Ahmed, M. M. Ahmed, S. Rehman

02.02.2018 | Ausgabe 2/2018

GaN-based double-gate (DG) sub-10-nm MOSFETs: effects of gate work function

Ibrahim Mustafa Mehedi, Abdulaziz M. Alshareef, Md. Rafiqul Islam, Md. Tanvir Hasan

13.03.2018 | Ausgabe 2/2018

Analysis and modeling of unipolar junction transistor with excellent performance: a novel DG MOSFET with junction

Zeinab Ramezani, Ali A. Orouji

26.03.2018 | Ausgabe 2/2018

Simulation of effects of emitter and collector widths on performance of silicon–germanium (SiGe) heterojunction bipolar transistors (HBTs)

A. Khadir, N. Sengouga, A. Kouzou, M. K. Abdelhafidi

16.02.2018 | Ausgabe 2/2018

Application of the generalized logistic functions in modeling inversion charge density of MOSFET

Tijana Kevkić, Vladica Stojanović, Dušan Joksimović

26.02.2018 | Ausgabe 2/2018

Fast, energy-efficient electronic structure simulations for multi-million atomic systems with GPU devices

Hoon Ryu, Oh-Kyoung Kwon

02.02.2018 | Ausgabe 2/2018

A novel Schottky contact super barrier rectifier with a top N-enhancement layer and a P-injector

Wensuo Chen, Ruijin Liao, Zheng Zeng, Peijian Zhang

27.03.2018 | Ausgabe 2/2018

Two-dimensional (2D) analytical investigation of an n-type junctionless gate-all-around tunnel field-effect transistor (JL GAA TFET)

Ajay, Rakhi Narang, Manoj Saxena, Mridula Gupta

02.03.2018 | Ausgabe 2/2018

Continuous semianalytical modeling of vertical surrounding-gate tunnel FET: analog/RF performance evaluation

Nidhal Abdelmalek, Fayçal Djeffal, Toufik Bentrcia

23.03.2018 | Ausgabe 2/2018

Improvement in electrostatic characteristics of doped TFETs by hole layer formation

Deepak Soni, Dheeraj Sharma, Mohd. Aslam, Shivendra Yadav

26.02.2018 | Ausgabe 2/2018

Characteristics of GaAs/GaSb tunnel field-effect transistors without doping junctions: numerical studies

Mahdi Vadizadeh

03.02.2018 | Ausgabe 2/2018

Impact of asymmetric dual-k spacers on tunnel field effect transistors

Mohd Adil Raushan, Naushad Alam, Mohd Waseem Akram, Mohd Jawaid Siddiqui

08.03.2018 | Ausgabe 2/2018

Numerical analysis of a polysilicon-based resistive memory device

Dan Berco, Umesh Chand

02.02.2018 | Ausgabe 2/2018

Reliable high-yield CNTFET-based 9T SRAM operating near threshold voltage region

Pramod Kumar Patel, M. M. Malik, Tarun K. Gupta

27.01.2018 | Ausgabe 2/2018

Photovoltaic module parameter estimation using an analytical approach and least squares method

Noureddine Maouhoub

06.03.2018 | Ausgabe 2/2018

On the optoelectronic properties of non-covalently functionalized graphene for solar cell application

Rihab Chouk, Manel Bergaoui, Mohamed Khalfaoui

26.03.2018 | Ausgabe 2/2018

Estimating various losses in c-Si solar cells subjected to partial shading: insights into J–V performance reduction

Zeel Purohit, Harsh Chaliyawala, Manoj Kumar, Brijesh Tripathi

19.02.2018 | Ausgabe 2/2018

Synthesis, computational study and characterization of a 3-{[2,3-diphenylquinoxalin-6-yl]diazenyl}-4-hydroxy-2H-chromen-2- one azo dye for dye-sensitized solar cell applications

Ramshah Ahmad Toor, Muhammad Hassan Sayyad, Syed Afaq Ali Shah, Nazia Nasr, Fatima Ijaz, Munawar Ali Munawar

01.03.2018 | Ausgabe 2/2018

Design of a high bitrate optical decoder based on photonic crystals

Fariborz Parandin, M. Mehdi Karkhanehchi, Mosayeb Naseri, Abdulhamid Zahedi

28.03.2018 | Ausgabe 2/2018

Design of an optical half-adder using cohesive twin-structured PCRR

K Janani, A Rajesh, T Shankar

09.03.2018 | Ausgabe 2/2018

Design and performance analysis of all-optical cascaded adder using SOA-based MZI

Manohari Ramachandran, Shanthi Prince, Deepika Verma

12.03.2018 | Ausgabe 2/2018

Analytical predictions for nonlinear optical processes in silicon slot waveguides

Vishnu Priye, Nishit Malviya, Alan Mickelson

15.03.2018 | Ausgabe 2/2018

A novel three-input approximate XOR gate design based on quantum-dot cellular automata

Negin Maroufi, Davoud Bahrepour

23.02.2018 | Author Correction | Ausgabe 2/2018

Correction to: From materials to systems: a multiscale analysis of nanomagnetic switching

Yunkun Xie, Jianhua Ma, Samiran Ganguly, Avik W. Ghosh

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