Ausgabe 4/2006
Special Section: Special Issue on the Proceedings of the International Workshop on Computational Electronics (IWCE-11) Part I. Guest Editor: Hans Kosina
Inhalt (51 Artikel)
An iterative matrix solution of the Boltzmann equation for the calculation of diffusion and noise in semiconductors
J. Diyadi, L. Hlou, K. Amechnoue, A. Moatadid, L. Varani, C. Palermo, J. F. Millithaler, J. C. Vaissière, J. P. Nougier
SSOR preconditioned GPBiCG method for the linear interference cancellation of asynchronous CDMA systems
L. Yang, R. S. Chen, Y. M. Siu, K. K. Soo
Super-resolution using neural networks based on the optimal recovery theory
Yizhen Huang, Yangjing Long
The 3D nanometer device project nextnano: Concepts, methods, results
Alex Trellakis, Tobias Zibold, Till Andlauer, Stefan Birner, R. Kent Smith, Richard Morschl, Peter Vogl
A novel approach to three-dimensional semiconductor process simulation: Application to thermal oxidation
Vasily Suvorov, Andreas Hössinger, Zoran Djurić, Neboysha Ljepojevic
Kinetic-energy transport equation for the modeling of ballistic MOSFETs
Ting-Wei Tang, Parmijit. Samra
Study of fluctuations in advanced MOSFETs using a 3D finite element parallel simulator
M. Aldegunde, A. J. García-Loureiro, K. Kalna, A. Asenov
Design perspective against random dopant fluctuation and process variation for scaling multi-gate devices
Yoshio Ashizawa, Ryo Tanabe, Hideki Oka
Simulation of piezoresistivity effect in FETs
Matthias Auf der Maur, Michael Povolotskyi, Fabio Sacconi, Aldo Di Carlo
Influences of grain structure on thermally induced stresses in 3D IC inter-wafer vias
D. N. Bentz, M. O. Bloomfield, J.-Q Lu, R. J. Gutmann, T. S. Cale
Intrinsic parameter fluctuations due to random grain orientations in high-κ gate stacks
Andrew R. Brown, Jeremy R. Watling, Asen Asenov
An evolution algorithm for noise modeling of HEMT’s down to cryogenic temperatures
Alina Caddemi, Francesco Catalfamo, Nicola Donato
Effects of lithography non-uniformity on device electrical behavior. Simple stochastic modeling of material and process effects on device performance
George P. Patsis, Vassilios Constantoudis, Evangelos Gogolides
Transient TCAD simulation of three-stage organic ring oscillator
C. Erlen, P. Lugli, M. Fiebig, S. Schiefer, B. Nickel
A novel framework for distributing computations DisPyTE – distributing Python tasks environment
Tim Fühner, Stephan Popp, Thomas Jung
Efficient full-flow process simulation for 3D structures including stress modeling
Alp H. Gencer, Andrei Lebedev, Paul Pfäffli
Simulation of slow current transients and current compression in AlGaAs/GaAs HFETs
H. Ikarashi, K. Kitamura, N. Kurosawa, K. Horio
A drain current model for Schottky-barrier CNT-FETs
David Jiménez, Xavier Cartoixà, Enrique Miranda, Jordi Suñé, Ferney Alveiro Chaves, Stephan Roche
A simulation-based evolutionary technique for inverse doping profile problem of sub-65 nm CMOS devices
Yiming Li, Cheng-Kai Chen
Accurate extraction of maximum current densities from the layout
Albert Seidl, Thomas Schnattinger, Andreas Erdmann, Hans Hartmann, Alexandr Petrashenko
Statistical study of the effect of interface charge fluctuations in HEMTs using a 3D simulator
N. Seoane, A. J. García-Loureiro, K. Kalna, A. Asenov
Quantum correction for DG MOSFETs
Martin Wagner, Markus Karner, Johann Cervenka, Martin Vasicek, Hans Kosina, Stefan Holzer, Tibor Grasser
Particle-based simulation: An algorithmic perspective
Marco Saraniti, Shela Aboud, Julien Branlard, Stephen M. Goodnick
A linear response Monte Carlo algorithm for inversion layers and magnetotransport
Christoph Jungemann, Anh-Tuan Pham, Bernd Meinerzhagen
Introducing energy broadening in semiclassical Monte Carlo simulations
Giulio Ferrari, A. Asenov, M. Nedjalkov, C. Jacoboni
Modeling p-channel SiGe MOSFETs by taking into account the band-structure and the size quantization effects self-consistently
S. Krishnan, D. Vasileska, M. V. Fischetti
Monte Carlo simulation of double gate MOSFET including multi sub-band description
J. Saint-Martin, A. Bournel, V. Aubry-Fortuna, F. Monsef, C. Chassat, P. Dollfus
An improved Wigner Monte-Carlo technique for the self-consistent simulation of RTDs
Damien Querlioz, Philippe Dollfus, Van-Nam Do, Arnaud Bournel, Van Lien Nguyen
Scattering and space-charge effects in Wigner Monte Carlo simulations of single and double barrier devices
Viktor Sverdlov, Tibor Grasser, Hans Kosina, Siegfried Selberherr
Self-consistent ion transport simulation in carbon nanotube channels
Jan F. Eschermann, Yan Li, Trudy A. Van der Straaten, Umberto Ravaioli
On a simple and accurate quantum correction for Monte Carlo simulation
F. M. Bufler, R. Hudé, A. Erlebach
DSMC versus WENO-BTE: A double gate MOSFET example
Maria José Cáceres, José Antonio Carrillo, Irene Gamba, Armando Majorana, Chi-Wang Shu
Wave-mixing effects on electronic noise in semiconductors
D. Persano Adorno, M. C. Capizzo, M. Zarcone
Full-band particle-based simulation of 85 nm AlInSb/InSb quantum well transistors
Nicolas Faralli, Himanshu Markandeya, Julien Branlard, Marco Saraniti, Stephen M. Goodnick, David K. Ferry
Scattering and space-charge effects in Wigner Monte Carlo simulations of single and double barrier devices
Viktor Sverdlov, Tibor Grasser, Hans Kosina, Siegfried Selberherr