Ausgabe 4/2007
Inhalt (7 Artikel)
Electronic properties of carbon nanotubes calculated from density functional theory and the empirical π-bond model
Deep Shah, Nicolas A. Bruque, Khairul Alam, Roger K. Lake, Rajeev R. Pandey
An effective quantum potential for particle–particle interactions in three-dimensional semiconductor device simulations
Clemens Heitzinger, Christian Ringhofer
Original Paper
Engineering model of a biased metal–molecule–metal junction
Matthieu Caussanel, Ronald D. Schrimpf, Leonidas Tsetseris, Matthew H. Evans, Sokrates T. Pantelides
Modeling and simulation of silicon neuron-to-ISFET junction
Giuseppe Massobrio, Paolo Massobrio, Sergio Martinoia
Comprehensive approach to modeling threshold voltage of nanoscale strained silicon SOI MOSFETs
M. Jagadesh Kumar, Vivek Venkataraman, Susheel Nawal