Ausgabe 4/2018
Inhalt (43 Artikel)
Efficient ab initio analysis of quantum confinement and band structure effects in ultra-scaled Si1−xGex gate-all-around and fin field-effect transistors for sub-10 nm technology nodes
Jie Liu, Chuanxiang Tang, Pinghui Mo, Jiwu Lu
First-principles study of efficient phenothiazine-based D–π–A organic sensitizers with various spacers for DSSCs
A. Arunkumar, S. Shanavas, P. M. Anbarasan
Quantum chemical investigation on molecular structure, vibrational, photophysical and nonlinear optical properties of l-threoninium picrate: an admirable contender for nonlinear applications
S. AlFaify, Mohd. Shkir, M. Arora, Ahmad Irfan, H. Algarni, Haider Abbas, Abdullah G. Al-Sehemi
First principles study of structural and electronic properties of BNNTs
Tayebeh Movlarooy, Babak Minaie
First-principles calculations on phase transformation and elastic properties of CuO under pressure
Bixia Yao, Xiaolong Zhou, Manmen Liu, Jie Yu, Jianchun Cao, Lihui Wang
Computational characterization of a-Si:H/c-Si interfaces
Philippe Czaja, Simone Giusepponi, Michele Gusso, Massimo Celino, Urs Aeberhard
Investigation on the structural, elastic, electronic, and magnetic properties of half-metallic and CoMnIrSi via first-principles calculations
D. M. Hoat, J. F. Rivas-Silva, Antonio Méndez Blas
A first-principles study of the structural, elastic, electronic, vibrational, and optical properties of BaSe1−xTex
Bouhafs Khalfallah, Fatima-Zohra Driss-Khodja, Fatiha Saadaoui, Mohammed Driss-Khodja, Abdelkader Boudali, Hanifi Bendaoud, Bachir Bouhafs
The backward Monte Carlo method for semiconductor device simulation
Markus Kampl, Hans Kosina
Theoretical analysis of band alignment and charge carriers migration in mixed-phase TiO2 systems
Cecilia I. N. Morgade, Norberto J. Castellani, Gabriela F. Cabeza
A tetracene-based single-electron transistor as a chlorine sensor
Barsha Jain, K. Vinod Kumar, B. SanthiBhushan, Kumar Gaurav, Manisha Pattanaik, Anurag Srivastava
Impact of channel length, gate insulator thickness, gate insulator material, and temperature on the performance of nanoscale FETs
Jibesh K. Saha, Nitish Chakma, Mehedhi Hasan
Electrostatically doped tunnel CNTFET model for low-power VLSI circuit design
Shashi Bala, Mamta Khosla
Analysis of a temperature-dependent delay optimization model for GNR interconnects using a wire sizing method
Sandip Bhattacharya, Subhajit Das, Arnab Mukhopadhyay, Debaprasad Das, Hafizur Rahaman
A quantum kinetic approach for calculating low-field mobility in black phosphorus crystals and multilayer phosphorene
K. L. Kovalenko, S. I. Kozlovskiy, N. N. Sharan
A compact interband tunneling current model for Gate-on-Source/Channel SOI-TFETs
Suman Kr. Mitra, Brinda Bhowmick
Fringing-field-based 2-D analytical model for a gate-underlap double-gate TFET
Dip Joti Paul, Md. Abdullah-Al-Kaiser, Md. Shofiqul Islam, Quazi D. M. Khosru
Updated structure of vertical double-diffused MOSFETs for irradiation hardening against single events
Zhaohuan Tang, Xingji Li, Kaizhou Tan, Chaoming Liu, Xinghua Fu
High-blocking-voltage UMOSFETs with reformed electric field distribution
Elham Abbasi, Ali A. Orouji
EMA-based modeling of the surface potential and drain current of dual-material gate-all-around TFETs
Varun Mishra, Yogesh Kumar Verma, Prateek Kishor Verma, Santosh Kumar Gupta
Strain effects on the DC performance of single-layer TMD-based double-gate field-effect transistors
Manouchehr Hosseini, Hamidreza Karami
3D numerical simulations of single-event transient effects in SOI FinFETs
Zhenyu Wu, Benneng Zhu, Tengyue Yi, Chao Li, Yi Liu, Yintang Yang
Moving mesh adaptation for Si and GaN-based power device simulation
Fawad Ismail, Palash Sarker, Mohamed Mohamed, Kyekyoon Kim, Umberto Ravaioli
Million-atom tight-binding modeling of non-polar a-plane InGaN light emitters
Md Rezaul Karim Nishat, Mayada M. Taher, Shaikh S. Ahmed
Performance investigation of 120 Gb/s all-optical logic XOR gate using dual-reflective semiconductor optical amplifier-based scheme
Amer Kotb, Kyriakos E. Zoiros, Chunlei Guo
Analog/RF characteristics of a 3D-Cyl underlap GAA-TFET based on a Ge source using fringing-field engineering for low-power applications
Ankur Beohar, Nandakishor Yadav, Ambika Prasad Shah, Santosh Kumar Vishvakarma
Computational study of Fermi kinetics transport applied to large-signal RF device simulations
Nicholas C. Miller, Matt Grupen, Kris Beckwith, David Smithe, John D. Albrecht
Practical design of the voltage controllable quadrature oscillator for operation in MHz bands employing new behavioral model of variable-voltage-gain current conveyor of second generation
Roman Sotner, Ladislav Polak, Jiri Petrzela, Lukas Langhammer
Electro-thermal RF modeling and performance analysis of graphene nanoribbon interconnects
Subhajit Das, Debaprasad Das, Hafizur Rahaman
Reduction of electromagnetic interference in HF circuits by improving the effectiveness of shielding structures
Ahmed Nouainia, Mohamed Hajji, Taoufik Aguili
Design of highly directive terahertz photoconductive dipole antenna using frequency-selective surface for sensing and imaging applications
Isha Malhotra, Kumud Ranjan Jha, G. Singh
Design of a printed symmetrical CPW-fed monopole antenna for on-body medical diagnosis applications
Avinash Kumar, Ritesh Kumar Badhai, Priyadarshi Suraj
A dual band rectifying antenna for RF energy harvesting
Neeta Singh, Binod K. Kanaujia, Mirza Tariq Beg, Mainuddin, Sachin Kumar, Mukesh K. Khandelwal
On the design methodology of Boolean functions with quantum-dot cellular automata for reducing delay and number of wire crossings
Masoumeh Tahmasebi, Reza Faghih Mirzaee, Seyyed Hossein Pishgar Komleh
Novel circuit design of serial–parallel multiplier in quantum-dot cellular automata technology
Iman Edrisi Arani, Abdalhossein Rezai
Analytical modeling and simulation of MEMS piezoresistive pressure sensors with a square silicon carbide diaphragm as the primary sensing element under different loading conditions
Sumit Kumar Jindal, Sai Pratyusha Magam, Maitreyi Shaklya
Impact of triple-material gate and highly doped source/drain extensions on sensitivity of DNA biosensors
M. Ouarghi, Z. Dibi, N. Hedjazi
Ultralow-power dielectric-modulated nanogap-embedded sub-20-nm TGRC-MOSFET for biosensing applications
Ajay Kumar, M. M. Tripathi, Rishu Chaujar
Theoretical investigations on newly designed triphenylamine-based donors applied into the D–π–A and D–A–π–A type sensitizers
Yanlin Song, Xiaofang Lu, Yang Sheng, Guorui Zhao, Guangying Wang, Zhiyuan Geng