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Zeitschrift

Journal of Computational Electronics

Journal of Computational Electronics 4/2018

Ausgabe 4/2018

Inhaltsverzeichnis ( 43 Artikel )

20.07.2018 | Ausgabe 4/2018

Efficient ab initio analysis of quantum confinement and band structure effects in ultra-scaled Si1−xGex gate-all-around and fin field-effect transistors for sub-10 nm technology nodes

Jie Liu, Chuanxiang Tang, Pinghui Mo, Jiwu Lu

13.08.2018 | Ausgabe 4/2018

First-principles study of efficient phenothiazine-based D–π–A organic sensitizers with various spacers for DSSCs

A. Arunkumar, S. Shanavas, P. M. Anbarasan

25.08.2018 | Ausgabe 4/2018

Quantum chemical investigation on molecular structure, vibrational, photophysical and nonlinear optical properties of l-threoninium picrate: an admirable contender for nonlinear applications

S. AlFaify, Mohd. Shkir, M. Arora, Ahmad Irfan, H. Algarni, Haider Abbas, Abdullah G. Al-Sehemi

14.08.2018 | Ausgabe 4/2018

Atomistic tight-binding theory for acceptor states (C, Be, Mg, Zn, Si and Cd) of GaAs nanocrystals

Worasak Sukkabot

15.09.2018 | Ausgabe 4/2018

First principles study of structural and electronic properties of BNNTs

Tayebeh Movlarooy, Babak Minaie

03.09.2018 | Ausgabe 4/2018

First-principles calculations on phase transformation and elastic properties of CuO under pressure

Bixia Yao, Xiaolong Zhou, Manmen Liu, Jie Yu, Jianchun Cao, Lihui Wang

30.08.2018 | Ausgabe 4/2018

Computational characterization of a-Si:H/c-Si interfaces

Philippe Czaja, Simone Giusepponi, Michele Gusso, Massimo Celino, Urs Aeberhard

28.09.2018 | Ausgabe 4/2018

Investigation on the structural, elastic, electronic, and magnetic properties of half-metallic and CoMnIrSi via first-principles calculations

D. M. Hoat, J. F. Rivas-Silva, Antonio Méndez Blas

15.09.2018 | Ausgabe 4/2018

A first-principles study of the structural, elastic, electronic, vibrational, and optical properties of BaSe1−xTex

Bouhafs Khalfallah, Fatima-Zohra Driss-Khodja, Fatiha Saadaoui, Mohammed Driss-Khodja, Abdelkader Boudali, Hanifi Bendaoud, Bachir Bouhafs

02.08.2018 | Ausgabe 4/2018 Open Access

The backward Monte Carlo method for semiconductor device simulation

Markus Kampl, Hans Kosina

10.08.2018 | Ausgabe 4/2018

Theoretical analysis of band alignment and charge carriers migration in mixed-phase TiO2 systems

Cecilia I. N. Morgade, Norberto J. Castellani, Gabriela F. Cabeza

24.07.2018 | Ausgabe 4/2018

A tetracene-based single-electron transistor as a chlorine sensor

Barsha Jain, K. Vinod Kumar, B. SanthiBhushan, Kumar Gaurav, Manisha Pattanaik, Anurag Srivastava

05.09.2018 | Ausgabe 4/2018

Impact of channel length, gate insulator thickness, gate insulator material, and temperature on the performance of nanoscale FETs

Jibesh K. Saha, Nitish Chakma, Mehedhi Hasan

05.09.2018 | Ausgabe 4/2018

Electrostatically doped tunnel CNTFET model for low-power VLSI circuit design

Shashi Bala, Mamta Khosla

24.09.2018 | Ausgabe 4/2018

Analysis of a temperature-dependent delay optimization model for GNR interconnects using a wire sizing method

Sandip Bhattacharya, Subhajit Das, Arnab Mukhopadhyay, Debaprasad Das, Hafizur Rahaman

01.10.2018 | Ausgabe 4/2018

A quantum kinetic approach for calculating low-field mobility in black phosphorus crystals and multilayer phosphorene

K. L. Kovalenko, S. I. Kozlovskiy, N. N. Sharan

05.09.2018 | Ausgabe 4/2018

A compact interband tunneling current model for Gate-on-Source/Channel SOI-TFETs

Suman Kr. Mitra, Brinda Bhowmick

22.08.2018 | Ausgabe 4/2018

Fringing-field-based 2-D analytical model for a gate-underlap double-gate TFET

Dip Joti Paul, Md. Abdullah-Al-Kaiser, Md. Shofiqul Islam, Quazi D. M. Khosru

11.08.2018 | Ausgabe 4/2018

Updated structure of vertical double-diffused MOSFETs for irradiation hardening against single events

Zhaohuan Tang, Xingji Li, Kaizhou Tan, Chaoming Liu, Xinghua Fu

06.09.2018 | Ausgabe 4/2018

High-blocking-voltage UMOSFETs with reformed electric field distribution

Elham Abbasi, Ali A. Orouji

05.10.2018 | Ausgabe 4/2018

EMA-based modeling of the surface potential and drain current of dual-material gate-all-around TFETs

Varun Mishra, Yogesh Kumar Verma, Prateek Kishor Verma, Santosh Kumar Gupta

09.08.2018 | Ausgabe 4/2018

Strain effects on the DC performance of single-layer TMD-based double-gate field-effect transistors

Manouchehr Hosseini, Hamidreza Karami

26.09.2018 | Ausgabe 4/2018

3D numerical simulations of single-event transient effects in SOI FinFETs

Zhenyu Wu, Benneng Zhu, Tengyue Yi, Chao Li, Yi Liu, Yintang Yang

09.10.2018 | Ausgabe 4/2018

A semiphysical current–voltage model with a contact ideality factor for disordered thin-film transistors

Sungsik Lee

24.07.2018 | Ausgabe 4/2018

Moving mesh adaptation for Si and GaN-based power device simulation

Fawad Ismail, Palash Sarker, Mohamed Mohamed, Kyekyoon Kim, Umberto Ravaioli

30.07.2018 | Ausgabe 4/2018

Million-atom tight-binding modeling of non-polar a-plane InGaN light emitters

Md Rezaul Karim Nishat, Mayada M. Taher, Shaikh S. Ahmed

04.09.2018 | Ausgabe 4/2018

Performance investigation of 120 Gb/s all-optical logic XOR gate using dual-reflective semiconductor optical amplifier-based scheme

Amer Kotb, Kyriakos E. Zoiros, Chunlei Guo

30.07.2018 | Ausgabe 4/2018

Analog/RF characteristics of a 3D-Cyl underlap GAA-TFET based on a Ge source using fringing-field engineering for low-power applications

Ankur Beohar, Nandakishor Yadav, Ambika Prasad Shah, Santosh Kumar Vishvakarma

08.09.2018 | Ausgabe 4/2018

Computational study of Fermi kinetics transport applied to large-signal RF device simulations

Nicholas C. Miller, Matt Grupen, Kris Beckwith, David Smithe, John D. Albrecht

01.10.2018 | Ausgabe 4/2018

Mathematical aspects of simulating efficient RF operation of HEMTs

Gennadiy Z. Garber

29.09.2018 | Ausgabe 4/2018

Practical design of the voltage controllable quadrature oscillator for operation in MHz bands employing new behavioral model of variable-voltage-gain current conveyor of second generation

Roman Sotner, Ladislav Polak, Jiri Petrzela, Lukas Langhammer

10.09.2018 | Ausgabe 4/2018

Electro-thermal RF modeling and performance analysis of graphene nanoribbon interconnects

Subhajit Das, Debaprasad Das, Hafizur Rahaman

24.07.2018 | Ausgabe 4/2018

Reduction of electromagnetic interference in HF circuits by improving the effectiveness of shielding structures

Ahmed Nouainia, Mohamed Hajji, Taoufik Aguili

24.07.2018 | Ausgabe 4/2018

Design of highly directive terahertz photoconductive dipole antenna using frequency-selective surface for sensing and imaging applications

Isha Malhotra, Kumud Ranjan Jha, G. Singh

24.08.2018 | Ausgabe 4/2018

Design of a printed symmetrical CPW-fed monopole antenna for on-body medical diagnosis applications

Avinash Kumar, Ritesh Kumar Badhai, Priyadarshi Suraj

11.09.2018 | Ausgabe 4/2018

A dual band rectifying antenna for RF energy harvesting

Neeta Singh, Binod K. Kanaujia, Mirza Tariq Beg, Mainuddin, Sachin Kumar, Mukesh K. Khandelwal

24.07.2018 | Ausgabe 4/2018

On the design methodology of Boolean functions with quantum-dot cellular automata for reducing delay and number of wire crossings

Masoumeh Tahmasebi, Reza Faghih Mirzaee, Seyyed Hossein Pishgar Komleh

25.07.2018 | Ausgabe 4/2018

Novel circuit design of serial–parallel multiplier in quantum-dot cellular automata technology

Iman Edrisi Arani, Abdalhossein Rezai

30.07.2018 | Ausgabe 4/2018

Analytical modeling and simulation of MEMS piezoresistive pressure sensors with a square silicon carbide diaphragm as the primary sensing element under different loading conditions

Sumit Kumar Jindal, Sai Pratyusha Magam, Maitreyi Shaklya

09.08.2018 | Ausgabe 4/2018

Ion shot noise in Hodgkin–Huxley neurons

Beatriz G. Vasallo, Javier Mateos, Tomás González

11.08.2018 | Ausgabe 4/2018

Impact of triple-material gate and highly doped source/drain extensions on sensitivity of DNA biosensors

M. Ouarghi, Z. Dibi, N. Hedjazi

11.09.2018 | Ausgabe 4/2018

Ultralow-power dielectric-modulated nanogap-embedded sub-20-nm TGRC-MOSFET for biosensing applications

Ajay Kumar, M. M. Tripathi, Rishu Chaujar

21.09.2018 | Ausgabe 4/2018

Theoretical investigations on newly designed triphenylamine-based donors applied into the D–π–A and D–A–π–A type sensitizers

Yanlin Song, Xiaofang Lu, Yang Sheng, Guorui Zhao, Guangying Wang, Zhiyuan Geng

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