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Journal of Electronic Materials

Ausgabe 10/2005

Inhalt (13 Artikel)

Regular Issue Paper

Thermal oxidation of polycrystalline and single crystalline aluminum nitride wafers

Z. Gu, J. H. Edgar, S. A. Speakman, D. Blom, J. Perrin, J. Chaudhuri

Regular Issue Paper

The correlation between stress relaxation and steady-state creep of eutectic Sn-Pb

W. H. Bang, K. H. Oh, J. P. Jung, J. W. Morris Jr., Fay Hua

Regular Issue Paper

Growth and properties of digitally-alloyed AlGaInP by solid source molecular beam epitaxy

O. Kwon, Y. Lin, J. Boeckl, S. A. Ringel

Regular Issue Paper

Roughness and texture correlation of Al films

Wenjie Zhang, Leeward Yi, Juineng Tu, Pingyi Chang, Duli Mao, Jin Wu

Regular Issue Paper

Simultaneous formation of p- and n-type ohmic contacts to 4H-SiC using the ternary Ni/Ti/Al system

S. Tsukimoto, T. Sakai, T. Onishi, Kazuhiro Ito, Masanori Murakami

Regular Issue Paper

The joint strength and microstructure of fluxless Au/Sn solders in InP-based laser diode packages

M. T. Sheen, Y. H. Ho, C. L. Wang, K. C. Hsieh, W. H. Cheng

Regular Issue Paper

Carbon-black thixotropic thermal pastes for improving thermal contacts

Chia-Ken Leong, Yasuhiro Aoyagi, D. D. L. Chung

Regular Issue Paper

A comparative study of micropipe decoration and counting in conductive and semi-insulating silicon carbide wafers

Jianwei Wan, Seung-Ho Park, Gilyong Chung, Mark Loboda

Regular Issue Paper

Growth of II-IV-V2 chalcopyrite nitrides by molecular beam epitaxy

J. E. van Nostrand, J. D. Albrecht, R. Cortez, K. D. Leedy, B. Johnson, M. J. O’keefe

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