Ausgabe 11/2013
2012 U.S. Workshop on the Physics and Chemistry of II-VI Materials. Guest Editors: S. Sivananthan and N.K. Dhar
Inhalt (52 Artikel)
Characterization of Plasma Etching Process Damage in HgCdTe
A. Gaucher, J. Baylet, J. Rothman, E. Martinez, C. Cardinaud
Numerical Simulation and Analytical Modeling of InAs nBn Infrared Detectors with p-Type Barriers
Marion Reine, Jonathan Schuster, Benjamin Pinkie, Enrico Bellotti
Correlations of Bridgman-Grown Cd0.9Zn0.1Te Properties with Different Ampoule Rotation Schemes
Amlan Datta, Santosh Swain, Yunlong Cui, Arnold Burger, Kelvin Lynn
Interaction Between AsHg and V Hg in Arsenic-Doped Hg1−x Cd x Te
Ziyan Wang, Yan Huang, Xiaoshuang Chen, Huxian Zhao, Wen Lei, Wei Lu
A Slightly Oxidizing Etchant for Polishing of CdTe and CdZnTe Surfaces
V. G. Ivanits’ka, P. Moravec, V. M. Tomashik, K. Mašek, Z. F. Tomashik, J. Franc, R. Grill, P. Höschl
Effect of Epilayer Tilt on Dynamical X-ray Diffraction from Uniform Heterostructures with Asymmetric Dislocation Densities
P.B. Rago, F.C. Jain, J.E. Ayers
Superlattice and Quantum Dot Unipolar Barrier Infrared Detectors
David Z.-Y. Ting, Alexander Soibel, Sam A. Keo, Arezou Khoshakhlagh, Cory J. Hill, Linda Höglund, Jason M. Mumolo, Sarath D. Gunapala
Numerical Simulation of Spatial and Spectral Crosstalk in Two-Color MWIR/LWIR HgCdTe Infrared Detector Arrays
Benjamin Pinkie, Enrico Bellotti
Determination of Critical Thickness for Epitaxial ZnTe Layers Grown by Molecular Beam Epitaxy on (211)B and (100) GaSb Substrates
J. Chai, O. C. Noriega, A. Dedigama, J. J. Kim, A. A. Savage, K. Doyle, C. Smith, N. Chau, J. Pena, J. H. Dinan, D. J. Smith, T. H. Myers
Comparison of the Schaake and Benson Etches to Delineate Dislocations in HgCdTe Layers
S. Farrell, Mulpuri V. Rao, G. Brill, Y. Chen, P. Wijewarnasuriya, N. Dhar, J. D. Benson, K. Harris
Performance of 12-μm- to 15-μm-Pitch MWIR and LWIR HgCdTe FPAs at Elevated Temperatures
Roger L. Strong, Michael A. Kinch, John M. Armstrong
Depth Profiling of Electronic Transport Parameters in n-on-p Boron-Ion-Implanted Vacancy-Doped HgCdTe
G. A. Umana-Membreno, H. Kala, J. Antoszewski, Z. H. Ye, W. D. Hu, R. J. Ding, X. S. Chen, W. Lu, L. He, J. M. Dell, L. Faraone
Cross-Sectional Study of Macrodefects in MBE Dual-Band HgCdTe on CdZnTe
M. Reddy, D. D. Lofgreen, K. A. Jones, J. M. Peterson, W. A. Radford, J. D. Benson, S. M. Johnson
The Effect of Subbandgap Illumination on the Bulk Resistivity of CdZnTe
Jonathan S. Wright, Aaron L. Washington II, Martine C. Duff, Arnold Burger, Michael Groza, Liviu Matei, Vladimir Buliga
Postgrowth Annealing of CdTe Layers Grown on Si Substrates by Metalorganic Vapor-Phase Epitaxy
K. Yasuda, M. Niraula, S. Namba, T. Kondo, S. Muramatsu, H. Yamashita, Y. Wajima, Y. Agata
Advancements in THM-Grown CdZnTe for Use as Substrates for HgCdTe
Jason MacKenzie, Francis Joseph Kumar, Henry Chen
Strain Determination in Quasi-Lattice-Matched LWIR HgCdTe/CdZnTe Layers
P. Ballet, X. Baudry, B. Polge, D. Brellier, J. Merlin, P. Gergaud
Low-Temperature Photoluminescence Study of CdTe:In Crystals Annealed in Molten Bismuth
G. Yang, A. E. Bolotnikov, Y. Cui, G. S. Camarda, A. Hossain, K. H. Kim, J. Franc, E. Belas, R. B. James
TEM Characterization of HgCdTe/CdTe Grown on GaAs(211)B Substrates
Jae Jin Kim, R. N. Jacobs, L. A. Almeida, M. Jaime-Vasquez, C. Nozaki, David J. Smith
Analysis of Mesa Dislocation Gettering in HgCdTe/CdTe/Si(211) by Scanning Transmission Electron Microscopy
R. N. Jacobs, A. J. Stoltz, J. D. Benson, P. Smith, C. M. Lennon, L. A. Almeida, S. Farrell, P. S. Wijewarnasuriya, G. Brill, Y. Chen, M. Salmon, J. Zu
Novel Multistate Quantum Dot Gate FETs Using SiO2 and Lattice-Matched ZnS-ZnMgS-ZnS as Gate Insulators
M. Lingalugari, K. Baskar, P.-Y. Chan, P. Dufilie, E. Suarez, J. Chandy, E. Heller, F. C. Jain
Investigations on a Multiple Mask Technique to Depress Processing-Induced Damage of ICP-Etched HgCdTe Trenches
Z. H. Ye, W. D. Hu, W. Lei, L. Yang, P. Zhang, Y. Huang, C. Lin, C. H. Sun, X. N. Hu, R. J. Ding, X. S. Chen, W. Lu, L. He
Simulation of Current Transport in Polycrystalline CdTe Solar Cells
F. Troni, R. Menozzi, E. Colegrove, C. Buurma
Investigation of Radiation Collection by InSb Infrared Focal-Plane Arrays with Micro-optic Structures
N. Guo, W. D. Hu, X. S. Chen, W. Lei, Y. Q. Lv, X. L. Zhang, J. J. Si, W. Lu
Large-Format and Long-Wavelength Infrared Mercury Cadmium Telluride Detectors
J. Wenisch, H. Bitterlich, M. Bruder, P. Fries, R. Wollrab, J. Wendler, R. Breiter, J. Ziegler
Four-State Sub-12-nm FETs Employing Lattice-Matched II–VI Barrier Layers
F. Jain, P.-Y. Chan, E. Suarez, M. Lingalugari, J. Kondo, P. Gogna, B. Miller, J. Chandy, E. Heller
Investigation of Trap States in Mid-Wavelength Infrared Type II Superlattices Using Time-Resolved Photoluminescence
Blair C. Connelly, Grace D. Metcalfe, Hongen Shen, Michael Wraback, Chadwick L. Canedy, Igor Vurgaftman, Joseph S. Melinger, Chaffra A. Affouda, Eric M. Jackson, Jill A. Nolde, Jerry R. Meyer, Edward H. Aifer
Numerical Analysis of Current–Voltage Characteristics of LWIR nBn and p-on-n HgCdTe Photodetectors
M. Kopytko, K. Jóźwikowski
Impurity Gettering in (112)B HgCdTe/CdTe/Alternate Substrates
J. D. Benson, L. O. Bubulac, C. M. Lennon, R. N. Jacobs, P. J. Smith, J. K. Markunas, M. Jaime-Vasquez, L. A. Almeida, A. Stoltz, J. A. Arias, G. Brill, Y. Chen, P. S. Wijewarnasuriya, M. F. Vilela, J. Peterson, S. M. Johnson, D. D. Lofgreen, D. Rhiger, E. A. Patten, J. Bangs
Variable-Field Hall Measurement and Transport in LW Single-Layer n-Type MBE Hg1−x Cd x Te
A. E. Brown, M. Jaime-Vasquez, L. A. Almeida, J. Arias, C. M. Lennon, R. N. Jacobs, J. Pellegrino, S. Sivananthan
High-Performance M/LWIR Dual-Band HgCdTe/Si Focal-Plane Arrays
M. F. Vilela, K. R. Olsson, E. M. Norton, J. M. Peterson, K. Rybnicek, D. R. Rhiger, C. W. Fulk, J. W. Bangs, D. D. Lofgreen, S. M. Johnson
Nitrogen Plasma Doping of Single-Crystal ZnTe and CdZnTe on Si by MBE
Richard Kodama, Thomas Seldrum, Xiaojin Wang, J. H. Park, Eric Colegrove, Xin Zheng, Ramesh Dhere, Siva Sivananthan
Impact of Surface Treatment on the Structural and Electronic Properties of Polished CdZnTe Surfaces for Radiation Detectors
Suleyman Tari, F. Aqariden, Y. Chang, C. Grein, Jin Li, N. Kioussis
Fabrication and Simulation of an Indium Gallium Arsenide Quantum-Dot-Gate Field-Effect Transistor (QDG-FET) with ZnMgS as a Tunnel Gate Insulator
P.-Y. Chan, M. Gogna, E. Suarez, F. Al-Amoody, S. Karmakar, B. I. Miller, E. K. Heller, J. E. Ayers, F. C. Jain
Voltage-Dependent Charge Storage in Cladded Zn0.56Cd0.44Se Quantum Dot MOS Capacitors for Multibit Memory Applications
J. Khan, M. Lingalugari, F. Al-Amoody, F. Jain
Quantum Dot Gate Three-State and Nonvolatile Memory Field-Effect Transistors Using a ZnS/ZnMgS/ZnS Heteroepitaxial Stack as a Tunnel Insulator on Silicon-on-Insulator Substrates
Ernesto Suarez, Pik-Yiu Chan, Murali Lingalugari, John E. Ayers, Evan Heller, Faquir Jain
Applications of the Infrared Measurement Analyzer: Hydrogenated LWIR HgCdTe Detectors
Christopher Buurma, Paul Boieriu, Ramana Bommena, Sivalingam Sivananthan
Low-Frequency Noise Characteristics of HgCdTe Infrared Photodiodes Operating at High Temperatures
W. Hassis, O. Gravrand, J. Rothman, S. Benahmed
Tuning Between Quantum-Dot- and Quantum-Well-Like Behaviors in Type II ZnTe Submonolayer Quantum Dots by Controlling Tellurium Flux During MBE Growth
H. Ji, B. Roy, S. Dhomkar, R. T. Moug, M. C. Tamargo, A. Wang, I. L. Kuskovsky
Theoretical Modeling of HOT HgCdTe Barrier Detectors for the Mid-Wave Infrared Range
P. Martyniuk, W. Gawron, A. Rogalski
History of the “Detector Materials Engineering” Crystal Growth Process for Bulk Hg1−x Cd x Te
W. M. Higgins, D. A. Nelson, R. G. Roy, R. P. Murosako, R. A. Lancaster, J. Tower, P. Norton
Arsenic p-Doping of HgCdTe Grown by Molecular Beam Epitaxy (MBE): A Solved Problem?
James W. Garland, Christoph Grein, Sivalingam Sivananthan
Ge-ZnSSe Spatial Wavefunction Switched (SWS) FETs to Implement Multibit SRAMs and Novel Quaternary Logic
P. Gogna, E. Suarez, M. Lingalugari, J. Chandy, E. Heller, E.-S. Hasaneen, F.-C. Jain
The Surface Kinetics of MBE-Grown CdTe (211)B During In Situ Cyclic Annealing
C. M. Lennon, L. A. Almeida, R. N. Jacobs, J. D. Benson, P. J. Smith, J. K. Markunas, J. Arias, J. Pellegrino
Issues in HgCdTe Research and Expected Progress in Infrared Detector Fabrication
O. Gravrand, G. Destefanis, S. Bisotto, N. Baier, J. Rothman, L. Mollard, D. Brellier, L. Rubaldo, A. Kerlain, V. Destefanis, M. Vuillermet
A Novel Metal-Rich Anneal for In Vacuo Passivation of High-Aspect-Ratio Mercury Cadmium Telluride Surfaces
Chang-Feng Wan, Thomas Orent, Thomas Myers, Ishwara Bhat, Andy Stoltz, Joe Pellegrino