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Zeitschrift

Journal of Electronic Materials

Journal of Electronic Materials 2/2003

Ausgabe 2/2003

Inhaltsverzeichnis ( 9 Artikel )

01.02.2003 | Regular Issue Paper | Ausgabe 2/2003

Electroluminescence and lasing properties of highly Bi-doped PbTe epitaxial layers grown by temperature difference method under controlled vapor pressure

Wataru Tamura, Arata Yasuda, Ken Suto, Osamu Itoh, Jun-Ichi Nishizawa

01.02.2003 | Regular Issue Paper | Ausgabe 2/2003

Palladium as a contact material for InSb semiconductors—The In-Pd-Sb phase diagram

Christoph Luef, Hans Flandorfer, Klaus W. Richter, Herbert Ipser

01.02.2003 | Regular Issue Paper | Ausgabe 2/2003

Interfacial microstructure between Sn-3Ag-xBi alloy and Cu substrate with or without electrolytic Ni plating

Chi-Won Hwang, Jung-Goo Lee, Katsuaki Suganuma, Hirotaro Mori

01.02.2003 | Regular Issue Paper | Ausgabe 2/2003

The wettability and microstructure of Sn-Zn-RE alloys

C. M. L. Wu, C. M. T. Law, D. Q. Yu, L. Wang

01.02.2003 | Regular Issue Paper | Ausgabe 2/2003

Phase formation and diffusion soldering in Pt/In, Pd/In, and Zr/Sn thin-film systems

Thomas Studnitzky, Rainer Schmid-Fetzer

01.02.2003 | Regular Issue Paper | Ausgabe 2/2003

Thermodynamic modeling of the Au-In-Sb ternary system

H. S. Liu, C. L. Liu, C. Wang, Z. P. Jin, K. Ishida

01.02.2003 | Regular Issue Paper | Ausgabe 2/2003

Effects of Ni thickness and reflow times on interfacial reactions between Ni/Cu under-bump metallization and eutectic Sn-Pb solder in flip-chip technology

Chien-Sheng Huang, Jenq-Gong Duh, Yen-Ming Chen, Jyh-Hwa Wang

01.02.2003 | Regular Issue Paper | Ausgabe 2/2003

Wetting interaction between Sn-Zn-Ag solders and Cu

Kwang-Lung Lin, Chia-Ling Shih

01.02.2003 | Regular Issue Paper | Ausgabe 2/2003

Current-carrying capacity of anisotropic-conductive film joints for the flip chip on flex applications

S. H. Fan, Y. C. Chan

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