Ausgabe 2/2003
Inhalt (9 Artikel)
Regular Issue Paper
Electroluminescence and lasing properties of highly Bi-doped PbTe epitaxial layers grown by temperature difference method under controlled vapor pressure
Wataru Tamura, Arata Yasuda, Ken Suto, Osamu Itoh, Jun-Ichi Nishizawa
Regular Issue Paper
Palladium as a contact material for InSb semiconductors—The In-Pd-Sb phase diagram
Christoph Luef, Hans Flandorfer, Klaus W. Richter, Herbert Ipser
Regular Issue Paper
Interfacial microstructure between Sn-3Ag-xBi alloy and Cu substrate with or without electrolytic Ni plating
Chi-Won Hwang, Jung-Goo Lee, Katsuaki Suganuma, Hirotaro Mori
Regular Issue Paper
The wettability and microstructure of Sn-Zn-RE alloys
C. M. L. Wu, C. M. T. Law, D. Q. Yu, L. Wang
Regular Issue Paper
Phase formation and diffusion soldering in Pt/In, Pd/In, and Zr/Sn thin-film systems
Thomas Studnitzky, Rainer Schmid-Fetzer
Regular Issue Paper
Thermodynamic modeling of the Au-In-Sb ternary system
H. S. Liu, C. L. Liu, C. Wang, Z. P. Jin, K. Ishida
Regular Issue Paper
Effects of Ni thickness and reflow times on interfacial reactions between Ni/Cu under-bump metallization and eutectic Sn-Pb solder in flip-chip technology
Chien-Sheng Huang, Jenq-Gong Duh, Yen-Ming Chen, Jyh-Hwa Wang
Regular Issue Paper
Wetting interaction between Sn-Zn-Ag solders and Cu
Kwang-Lung Lin, Chia-Ling Shih
Regular Issue Paper
Current-carrying capacity of anisotropic-conductive film joints for the flip chip on flex applications
S. H. Fan, Y. C. Chan