Skip to main content

Journal of Electronic Materials

Ausgabe 3/2008

Inhalt (17 Artikel)

Fabrication of Strained-Si/Strained-Ge Heterostructures on Insulator

Leonardo Gomez, Michael Canonico, Meekyung Kim, Pouya Hashemi, Judy L. Hoyt

Silicidation of Ni(Yb) Film on Si(001)

Jia Luo, Yu-Long Jiang, Guo-Ping Ru, Bing-Zong Li, Paul K. Chu

Stress-Induced Grain Boundary Migration in Polycrystalline Copper

Max O. Bloomfield, Daniel N. Bentz, Timothy S. Cale

Microstructure and Creep Deformation of Sn-Ag-Cu-Bi/Cu Solder Joints

Min He, Sylvester N. Ekpenuma, Viola L. Acoff

Interfacial Reaction Between Cu Substrates and Zn-Al Base High-Temperature Pb-Free Solders

Yoshikazu Takaku, Lazuardi Felicia, Ikuo Ohnuma, Ryosuke Kainuma, Kiyohito Ishida

Ambient Temperature Ultrasonic Bonding of Si-Dice Using Sn-3.5wt.%Ag

Jung-Mo Kim, Jae-Pil Jung, Y. Norman Zhou, Jong-Young Kim

Wet Etching Study of La0.67(Sr0.5Ca0.5)0.33MnO3 Films on Silicon Substrates

Joo-Hyung Kim, Alexander M. Grishin, Velislava Angelova Ignatova

Neuer Inhalt