Ausgabe 4/2005
Inhalt (26 Artikel)
Investigation of longitudinal-optical phonon-plasmon coupled modes in SiC epitaxial film using fourier transform infrared reflection
Swapna Sunkari, M. S. Mazzola, J. P. Mazzola, Hrishikesh Das, J. L. Wyatt
Fast epitaxial growth of high-purity 4H-SiC() in a vertical hot-wall chemical vapor deposition) in a vertical hot-wall chemical vapor deposition
Katsunori Danno, Tsunenobu Kimoto, Katsunori Asano, Yoshitaka Sugawara, Hiroyuki Matsunami
Influence of low-field-mobility-related issues on SiC metal-semiconductor field-effect transistor performance
Ho-Young Cha, Y. C. Choi, L. F. Eastman, M. G. Spencer, L. Ardaravicius, A. Matulionis, O. Kiprijanovic
Thermally stimulated current spectroscopy of high-purity semi-insulating 4H-SiC substrates
Z. -Q. Fang, B. Claflin, D. C. Look, L. Polenta, W. C. Mitchel
Drift-free 10-kV, 20-A 4H-SiC PiN diodes
Brett A. Hull, Mrinal K. Das, Joseph J. Sumakeris, James T. Richmond, Sumi Krishnaswami
SiC field-effect devices operating at high temperature
Ruby N. Ghosh, Peter Tobias
Planar defects in 4H-SiC PiN diodes
M. E. Twigg, R. E. Stahlbush, K. G. Irvine, J. J. Sumakeris, T. P. Chow, P. A. Lossee, L. Zhu
Microstructure and enhanced morphology of planar nonpolar m-plane GaN grown by hydride vapor phase epitaxy
Benjamin A. Haskell, Arpan Chakraborty, Feng Wu, Hideo Sasano, Paul T. Fini, Steven P. Denbaars, James S. Speck, Shuji Nakamura
Superior suppression of gate current leakage in Al2O3/Si3N4 bilayer-based AlGaN/GaN insulated gate heterostructure field-effect transistors
C. X. Wang, N. Maeda, M. Hiroki, T. Tawara, T. Makimoto, T. Kobayahsi, T. Enoki
AIN-based dilute magnetic semiconductors
R. M. Frazier, G. T. Thaler, B. P. Gila, J. Stapleton, M. E. Overberg, C. R. Abernathy, S. J. Pearton, F. Ren, J. M. Zavada
Design of edge termination for GaN power Schottky diodes
J. R. Laroche, F. Ren, K. W. Baik, S. J. Pearton, B. S. Shelton, B. Peres
Cross-polarization imaging and micro-raman detection of defects in the epitaxy of 4H-SiC
O. J. Glembocki, S. M. Prokes, R. E. Stahlbush, M. F. Macmillan
Properties of electrical contacts on bulk and epitaxial n-type ZnO
T. E. Murphy, J. O. Blaszczak, K. Moazzami, W. E. Bowen, J. D. Phillips
Proton irradiation of ZnO schottky diodes
Rohit Khanna, K. Ip, K. K. Allums, K. Baik, C. R. Abernathy, S. J. Pearton, Y. W. Heo, D. P. Norton, F. Ren, S. Shojah-Ardalan, R. Wilkins
Shallow donor generation in ZnO by remote hydrogen plasma
Yuri M. Strzhemechny, Howard L. Mosbacker, Stephen H. Goss, David C. Look, Donald C. Reynolds, Cole W. Litton, Nelson Y. Garces, Nancy C. Giles, Larry E. Halliburton, Shigeru Niki, Leonard J. Brillson
Fabrication approaches to ZnO nanowire devices
J. R. LaRoche, Y. W. Heo, B. S. Kang, L. C. Tien, Y. Kwon, D. P. Norton, B. P. Gila, F. Ren, S. J. Pearton
Properties of phosphorus-doped (Zn,Mg)O thin films and device structures
Y. W. Heo, Y. W. Kwon, Y. Li, S. J. Pearton, D. P. Norton
Development of MgZnO-ZnO-AlGaN heterostructures for ultraviolet light emitting applications
J. W. Dong, A. Osinsky, B. Hertog, A. M. Dabiran, P. P. Chow, Y. W. Heo, D. P. Norton, S. J. Pearton
Crystal quality of InN thin films grown on ZnO substrate by radio-frequency molecular beam epitaxy
Satoru Ohuchi, Toshiyuki Takizawa
Characteristics of 6H-silicon carbide PIN diodes prototyping by laser doping
Z. Tian, N. R. Quick, A. Kar
Preparation of ultrasmooth and defect-free 4H-SiC(0001) surfaces by elastic emission machining
Akihisa Kubota, Hidekazu Mimura, Kouji Inagaki, Kenta Arima, Yuzo Mori, Kazuto Yamauchi
A magnetotransport study of AlGaN/GaN heterostructures on silicon
S. Elhamri, W. C. Mitchel, W. D. Mitchell, R. Berney, M. Ahoujja, J. C. Roberts, P. Rajagopal, T. Gehrke, E. L. Piner, K. J. Linthicum
Fabrication and characterization of 4H-SiC P-N junction diodes by selective-epitaxial growth using TaC as the mask
C. Li, P. Losee, J. Seiler, I. Bhat, T. P. Chow
Modification of 4H-SiC and 6H-SiC(0001)Si surfaces through the interaction with atomic hydrogen and nitrogen
Maria Losurdo, Maria M. Giangregorio, Pio Capezzuto, Giovanni Bruno, April S. Brown, Tong-Ho Kim, Changhyun Yi