Ausgabe 4/2006
Inhalt (50 Artikel)
Electrical properties of ZnO Nano-particles embedded in polyimide
E. K. Kim, J. H. Kim, H. K. Noh, Y. H. Kim
Selective and nonselective wet etching of Zn0.9Mg0.1O/ZnO
Jau-Jiun Chen, Soohwan Jang, F. Ren, Yuanjie Li, Hyun-Sik Kim, D. P. Norton, S. J. Pearton, A. Osinsky, S. N. G. Chu, J. F. Weaver
Effect of annealing on electrical properties of radio-frequency-sputtered ZnO films
Y. I. Alivov, X. Bo, S. Akarca-Biyikli, Q. Fan, J. Xie, N. Biyikli, K. Zhu, D. Johnstone, H. Morkoç
Free carrier absorption and lattice vibrational modes in bulk ZnO
P. Y. Emelie, J. D. Phillips, B. Buller, U. D. Venkateswaran
Synthesis and characterization of phosphorus-doped ZnO and (Zn,Mg)O thin films via pulsed laser deposition
Y. J. Li, Y. W. Heo, J. M. Erie, H. Kim, K. Ip, S. J. Pearton, D. P. Norton
Polarization, piezoelectric constants, and elastic constants of ZnO, MgO, and CdO
Priya Gopal, Nicola A. Spaldin
Thermal conductivity of bulk ZnO after different thermal treatments
Ü. Özgür, X. Gu, S. Chevtchenko, J. Spradlin, S. -J. Cho, H. Morkoç, F. H. Pollak, H. O. Everitt, B. Nemeth, J. E. Nause
Valency configuration of transition metal impurities in ZnO
L. Petit, T. C. Schulthess, A. Svane, W. M. Temmerman, Z. Szotek, A. Janotti
Influence of growth conditions and surface reaction byproducts on GaN grown via metal organic molecular beam epitaxy: Toward an understanding of surface reaction chemistry
David Pritchett, Walter Henderson, Shawn D. Burnham, W. Alan Doolittle
Gate control, surface leakage currents, and peripheral charging in AlGaN/GaN heterostructure field effect transistors having nanometer-scale schottky gates
S. Kasai, J. Kotani, T. Hashizume, H. Hasegawa
Catalyst-free growth of GaN nanowires
K. A. Bertness, N. A. Sanford, J. M. Barker, J. B. Schlager, A. Roshko, A. V. Davydov, I. Levin
Schottky barrier formation at nonpolar Au/GaN epilayer interfaces
D. E. Walker Jr., M. Gao, X. Chen, W. J. Schaff, L. J. Brillson
Influence of growth temperature and growth rate of p-GaN layers on the characteristics of green light emitting diodes
Wonseok Lee, Jae Limb, Jae-Hyun Ryou, Dongwon Yoo, Theodore Chung, Russell D. Dupuis
Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers
Kai Cheng, M. Leys, S. Degroote, B. Van Daele, S. Boeykens, J. Derluyn, M. Germain, G. Van Tendeloo, J. Engelen, G. Borghs
Anisotropy in the quantum lifetime in AlGaN/GaN heterostructures
S. Elhamri, W. C. Mitchel, W. D. Mitchell, R. Berney, G. R. Landis
Calculations and measurements of contact resistance of semi-transparent Ni/Pd contacts to p-GaN
Katherine H. A. Bogart, John Crofton
Giant traps on the surface of hydride vapor phase epitaxy-grown free-standing GaN
Z. -Q. Fang, D. C. Look, A. Krtschil, A. Krost, F. A. Khan, I. Adesida
Extraction of SiO2/SiC interface trap profile in 4H- and 6H-SiC metal-oxide semiconductor field-effect transistors from subthreshold characteristics at 25°C and 150°C
Yanqing Deng, Wei Wang, Qizhi Fang, Mahalingam B. Koushik, T. Paul Chow
Effect of high-temperature processing on the creation of boron-related deep levels in 4H-SiC
Hrishikesh Das, Yaroslav Koshka, Michael S. Mazzola, Swapna G. Sunkari, J. L. Wyatt
Relationship between infrared photoluminescence and resistivity in semi-insulating 6H-SiC
S. K. Chanda, Y. Koshka, M. Yoganathan
Room-temperature ferromagnetic ordering in Mn-doped ZnO thin films grown by pulsed laser deposition
W. Y. Shim, K. A. Jeon, K. I. Lee, S. Y. Lee, M. H. Jung, W. Y. Lee
Growth of AlGaN alloys exhibiting enhanced luminescence efficiency
A. V. Sampath, G. A. Garrett, C. J. Collins, W. L. Sarney, E. D. Readinger, P. G. Newman, H. Shen, M. Wraback
Electrical and optical characterization studies of lower dose Si-implanted AlxGa1−xN
Mee-Yi Ryu, Y. K. Yeo, M. A. Marciniak, T. W. Zens, E. A. Moore, R. L. Hengehold, T. D. Steiner
Investigation of GaNxP1−x/GaP LED structure optical properties
L. Peternai, J. Kovac, J. Jakabovic, V. Gottschalch, B. Rheinlaender
Annealing temperature dependence of TiB2 schottky barrier contacts on n-GaN
Rohit Khanna, S. J. Pearton, F. Ren, I. Kravchenko
Electrical properties of undoped bulk ZnO substrates
A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, E. A. Kozhukhova, S. J. Pearton, D. P. Norton, A. Osinsky, Amir Dabiran
High-yield GaN nanowire synthesis and field-effect transistor fabrication
Huaqiang Wu, Ho-Young Cha, M. Chandrashekhar, Michael G. Spencer, Goutam Koley
Comparison of laser-wavelength operation for drilling of via holes in AlGaN/GaN HEMTs on SiC substrates
T. J. Anderson, F. Ren, L. Covert, J. Lin, S. J. Pearton, T. W. Dalrymple, C. Bozada, R. C. Fitch, N. Moser, R. G. Bedford, M. Schimpf
Selective dry etching of (Sc2O3)x(Ga2O3)1−x gate dielectrics and surface passivation films on GaN
M. Hlad, L. Voss, B. P. Gila, C. R. Abernathy, S. J. Pearton, F. Ren
Si-diffused GaN for enhancement-mode GaN mosfet on si applications
Soohwan Jang, F. Ren, S. J. Pearton, B. P. Gila, M. Hlad, C. R. Abernathy, Hyucksoo Yang, C. J. Pan, Jenn-Inn Chyi, P. Bove, H. Lahreche, J. Thuret
ZnO growth on Si with low-temperature CdO and ZnO buffer layers by molecular-beam epitaxy
F. X. Xiu, Z. Yang, D. T. Zhao, J. L. Liu, K. A. Alim, A. A. Balandin, M. E. Itkis, R. C. Haddon
Growth of InGaN HBTs by MOCVD
Theodore Chung, Jae Limb, Jae-Hyun Ryou, Wonseok Lee, Peng Li, Dongwon Yoo, Xue-Bing Zhang, Shyh-Chiang Shen, Russell D. Dupuis, David Keogh, Peter Asbeck, Ben Chukung, Milton Feng, Dimitri Zakharov, Zusanne Lilienthal-Weber
Effect of thin strain-compensated Al0.6Ga0.4P layers on the growth of multiple-stacked InP/In0.5Al0.3Ga0.2P quantum dots
X. B. Zhang, J. H. Ryou, R. D. Dupuis, L. He, R. Hull, G. Walter, N. Holonyak Jr.
Metalorganic chemical vapor deposition growth and characterization of InGaP/GaAs superlattices
X. B. Zhang, J. H. Ryou, R. D. Dupuis, G. Walter, N. Holonyak Jr.
Optoelectronic properties of expanding thermal plasma deposited textured zinc oxide: Effect of aluminum doping
R. Groenen, E. R. Kieft, J. L. Linden, M. C. M. Van de Sanden
Photoluminescence properties of GaN with dislocations induced by plastic deformation
Ichiro Yonenaga, Hisao Makino, Shun Itoh, Takenari Goto, Takafumi Yao
High-temperature transport properties of 2DEG in AlGaN/GaN heterostructures
Y. Q. Tao, D. J. Chen, Y. C. Kong, B. Shen, Z. L. Xie, P. Han, R. Zhang, Y. D. Zheng
Band offsets analysis of dilute nitride single quantum well structures employing surface photo voltage measurements
Massimo Galluppi, Lutz Geelhaar, Henning Riechert
Electrical transport properties of single GaN and InN nanowires
Chih-Yang Chang, Gou-Chung Chi, Wei-Ming Wang, Li-Chyong Chen, Kuei-Hsien Chen, F. Ren, S. J. Pearton
GaN/AIN multiple quantum wells grown on GaN-AIN waveguide structure by metalorganic vapor-phase epitaxy
Chaiyasit Kumtornkittikul, Masakazu Sugiyama, Yoshiaki Nakano
Optimized doping and contact scheme for low-voltage 275-nm deep ultraviolet LEDs
Craig G. Moe, Mathew C. Schmidt, Hisashi Masui, Arpan Chakraborty, Kenneth Vampola, Scott Newman, Brendan Moran, Likun Shen, Tom Mates, Stacia Keller, Steven P. Denbaars, David Emerson
Characterization of Ti schottky diodes on epi-regrown 4H-SiC
Lin Zhu, Canhua Li, T. Paul Chow, Ishwara B. Bhat, Kenneth A. Jones, C. Scozzie, Anant Agarwal
Evolution of ZnO nanostructures on silicon substrate by vapor-solid mechanism: Structural and optical properties
A. Umar, Y. H. Im, Y. B. Hahn
Metalorganic chemical vapor deposition and characterization of ZnO materials
Shangzu Sun, Gary S. Tompa, Brent Hoerman, David C. Look, Bruce B. Claflin, Catherine E. Rice, Puneet Masaun
Digital etching of III-N materials using a two-step Ar/KOH technique
David Keogh, Peter Asbeck, Theodore Chung, Russell D. Dupuis, Milton Feng
Advances in pulsed-laser-deposited AIN thin films for high-temperature capping, device passivation, and piezoelectric-based RF MEMS/NEMS resonator applications
S. S. Hullavarad, R. D. Vispute, B. Nagaraj, V. N. Kulkarni, S. Dhar, T. Venkatesan, K. A. Jones, M. Derenge, T. Zheleva, M. H. Ervin, A. Lelis, C. J. Scozzie, D. Habersat, A. E. Wickenden, L. J. Currano, M. Dubey
Selective growth and directed integration of ZnO nanobridge devices on si substrates without a metal catalyst using a ZnO seed layer
John F. Conley Jr., Lisa Stecker, Yoshi Ono