Ausgabe 5/2008
Inhalt (41 Artikel)
Influence of Mg Doping on the Morphological, Optical, and Structural Properties of InGaN/GaN Multiple Quantum Wells
Z. Chen, N. Fichtenbaum, D. Brown, S. Keller, U.K. Mishra, S.P. Denbaars, S. Nakamura
Role of Gate Oxide in AlGaN/GaN High-Electron-Mobility Transistor pH Sensors
B.S. Kang, H.T. Wang, F. Ren, M. Hlad, B.P. Gila, C.R. Abernathy, S.J. Pearton, C. Li, Z.N. Low, J. Lin, J.W. Johnson, P. Rajagopal, J.C. Roberts, E.L. Piner, K.J. Linthicum
Scanning Ion Probe Studies of Silicon Implantation Profiles in AlGaN/GaN HEMT Heterostructures
M. Kocan, G.A. Umana-Membreno, M.R. Kilburn, I.R. Fletcher, F. Recht, L. McCarthy, U.K. Mishra, B.D. Nener, G. Parish
Characteristics of Green Light-Emitting Diodes Using an InGaN:Mg/GaN:Mg Superlattice as p-Type Hole Injection and Contact Layers
J.P. Liu, J.B. Limb, J.-H. Ryou, W. Lee, D. Yoo, C.A. Horne, R.D. Dupuis
Ti/Al/Ti/Au and V/Al/V/Au Contacts to Plasma-Etched n-Al0.58Ga0.42N
M.A. Miller, B.H. Koo, K.H.A. Bogart, S.E. Mohney
Electrically Active Defects in GaN Layers Grown With and Without Fe-doped Buffers by Metal-organic Chemical Vapor Deposition
G.A. Umana-Membreno, G. Parish, N. Fichtenbaum, S. Keller, U.K. Mishra, B.D. Nener
Extraction of Transport Dynamics in AlGaN/GaN HFETs Through Free Carrier Absorption
Yuh-Renn Wu, John M. Hinckley, Jasprit Singh
Synthesis and Properties of High-Quality InN Nanowires and Nanonetworks
Z. Cai, S. Garzon, M.V.S. Chandrashekhar, R.A. Webb, G. Koley
Effect of MBE Growth Conditions on Multiple Electron Transport in InN
Tamara B. Fehlberg, Chad S. Gallinat, Gilberto A. Umana-Membreno, Gregor Koblmüller, Brett D. Nener, James S. Speck, Giacinta Parish
Cathodoluminescence Study on Spatial Luminescence Properties of InN/GaN Multiple Quantum Wells Consisting of 1-Monolayer-Thick InN Wells/GaN Matrix
E.S. Hwang, S.B. Che, H. Saito, X. Wang, Y. Ishitani, A. Yoshikawa
Correlation Between Threading Dislocations and Nonradiative Recombination Centers in InN Observed by IR Cathodoluminescence
T. Akagi, K. Kosaka, S. Harui, D. Muto, H. Naoi, T. Araki, Y. Nanishi
Junction Temperature Measurements and Thermal Modeling of GaInN/GaN Quantum Well Light-Emitting Diodes
J. Senawiratne, Y. Li, M. Zhu, Y. Xia, W. Zhao, T. Detchprohm, A. Chatterjee, J.L. Plawsky, C. Wetzel
Optical Hall Effect in Hexagonal InN
T. Hofmann, V. Darakchieva, B. Monemar, H. Lu, W.J. Schaff, M. Schubert
Effect of Anodic Oxidation on the Characteristics of Lattice-Matched AlInN/GaN Heterostructures
C. Pietzka, A. Denisenko, M. Alomari, F. Medjdoub, J.-F. Carlin, E. Feltin, N. Grandjean, E. Kohn
Enhancement of the Schottky Barrier Height using a Nitrogen-Rich Tungsten Nitride Thin Film for the Schottky Contacts on AlGaN/GaN Heterostructures
Chung-Yu Lu, Edward Yi Chang, Jui-Chien Huang, Chia-Ta Chang, Mei-Hsuan Lin, Ching-Tung Lee
Crystalline SiN x Ultrathin Films Grown on AlGaN/GaN Using In Situ Metalorganic Chemical Vapor Deposition
Toshiyuki Takizawa, Satoshi Nakazawa, Tetsuzo Ueda
Formation of Low-Resistance Ohmic Contact by Damage-Proof Selective-Area Growth of Single-Crystal n +-GaN Using Plasma-Assisted Molecular Beam Epitaxy
Hui-Chan Seo, Seung Jae Hong, Patrick Chapman, Kyekyoon(Kevin) Kim
Structural Characterization of Homoepitaxial Blue GaInN/GaN Light-Emitting Diodes by Transmission Electron Microscopy
M. Zhu, Y. Xia, W. Zhao, Y. Li, J. Senawiratne, T. Detchprohm, C. Wetzel
Some Critical Materials and Processing Issues in SiC Power Devices
Anant Agarwal, Sarah Haney
Imaging Surface Pits and Dislocations in 4H-SiC by Forescattered Electron Detection and Photoluminescence
Y.N. Picard, K.X. Liu, R.E. Stahlbush, M.E. Twigg
1200 V 4H-SiC Bipolar Junction Transistors with A Record β of 70
Charlotte Jonas, Craig Capell, Al Burk, Qingchun Zhang, Robert Callanan, Anant Agarwal, Bruce Geil, Charles Scozzie
The Effects of Implant Activation Anneal on the Effective Inversion Layer Mobility of 4H-SiC MOSFETs
Sarah Haney, Anant Agarwal
Cross-sectional TEM and KOH-Etch Studies of Extended Defects in 3C-SiC p + n Junction Diodes Grown on 4H-SiC Mesas
Kevin M. Speer, Philip G. Neudeck, David J. Spry, Andrew J. Trunek, Pirouz Pirouz
Structural and Morphological Investigation of Pendeo-Epitaxy 3C-SiC on Si Substrates
Byeung C. Kim, Michael A. Capano
Real-Time In Situ Tracking of Gas-Phase Carbon-to-Silicon Ratio During Hot-Wall CVD Growth of SiC
B.L. VanMil, K.K. Lew, R.L. Myers-Ward, C.R. Eddy Jr., D.K. Gaskill
Epitaxial SiC Growth Morphology and Extended Defects Investigated by Electron Backscatter Diffraction and Electron Channeling Contrast Imaging
Yoosuf N. Picard, Mark E. Twigg, Joshua D. Caldwell, Charles R. Eddy Jr., Philip G. Neudeck, Andrew J. Trunek, J. Anthony Powell
Influence of Temperature on Shockley Stacking Fault Expansion and Contraction in SiC PiN Diodes
Joshua D. Caldwell, Orest J. Glembocki, Robert E. Stahlbush, Karl D. Hobart
Investigation of Electron–Hole Recombination-Activated Partial Dislocations and Their Behavior in 4H-SiC Epitaxial Layers
Yi Chen, Ning Zhang, Michael Dudley, Joshua D. Caldwell, Kendrick X. Liu, Robert E. Stahlbush, Xianrong Huang, Albert T. Macrander, David R. Black
Simulation of Grazing-Incidence Synchrotron White Beam X-ray Topographic Images of Micropipes in 4H-SiC and Determination of Their Dislocation Senses
Yi Chen, Michael Dudley, Edward K. Sanchez, Michael F. MacMillan
Faster Growth of 6H-SiC Single Crystals by a Physical Vapor Transport Technique with Two Crucibles
Jikuan Cheng, Jiqiang Gao, Junlin Liu, Jianfeng Yang, Xian Jiang, Rui Guo
Silicon Carbide Terahertz Emitting Devices
G. Xuan, P.-C. Lv, X. Zhang, J. Kolodzey, G. DeSalvo, A. Powell
Examination of In-Grown Stacking Faults in 8°- and 4°-Offcut 4H-SiC Epitaxy by Photoluminescence Imaging
Kendrick X. Liu, Robert E. Stahlbush, Kok-Keong Lew, Rachael L. Myers-Ward, Brenda L. VanMil, Kurt D. Gaskill, Charles R. Eddy
Growth of Polarity-Controlled ZnO Films on (0001) Al2O3
J.S. Park, J.H. Chang, T. Minegishi, H.J. Lee, S.H. Park, I.H. Im, T. Hanada, S.K. Hong, M.W. Cho, T. Yao
Quantum Confinement and Carrier Localization Effects in ZnO/Mg x Zn1−x O Wells Synthesized by Pulsed Laser Deposition
W.E. Bowen, W. Wang, E. Cagin, J.D. Phillips
ZnO Thin Film, Device, and Circuit Fabrication using Low-Temperature PECVD Processes
Jie Sun, Devin A. Mourey, Dalong Zhao, Thomas N. Jackson
A High-Performance Ultraviolet Photoconductive Detector Based on a ZnO Film Grown by RF Sputtering
Zhen Bi, Jingwen Zhang, Xuming Bian, Dong Wang, Xin’an Zhang, Weifeng Zhang, Xun Hou
Annealing Studies on Zinc Oxide Thin Films Deposited by Magnetron Sputtering
Tingfang Yen, Dave Strome, Sung Jin Kim, Alexander N. Cartwright, Wayne A. Anderson
Electrical Characteristics of n-ZnO/p-Si Heterojunction Diodes Grown by Pulsed Laser Deposition at Different Oxygen Pressures
R.S. Ajimsha, M.K. Jayaraj, L.M. Kukreja