Ausgabe 6/2000
Inhalt (50 Artikel)
Large VLWIR Hg1−xCdxTe photovoltaic detectors
A. I. D’Souza, L. C. Dawson, C. Staller, P. S. Wijewarnasuriya, R. E. Dewames, W. V. Mclevige, J. M. Arias, D. Edwall, G. Hildebrandt
Variable area MWIR diodes on HgCdTe/Si grown by molecular beam epitaxy
R. Ashokan, N. K. Dhar, B. Yang, A. Akhiyat, T. S. Lee, S. Rujirawat, S. Yousuf, S. Sivananthan
Status of the MBE technology at leti LIR for the manufacturing of HgCdTe focal plane arrays
P. Ferret, J. P. Zanatta, R. Hamelin, S. Cremer, A. Million, M. Wolny, G. Destefanis
In-situ evaluation of the anodic oxide growth on Hg1−xCdxTe (MCT) using ellipsometry and second harmonic generation
A. W. Wark, L. E. A. Berlouis, F. K. Cruickshank, D. Pugh, P. F. Brevet
Evaluation of Zn uniformity in CdZnTe substrates
R. Hirano, A. Hichiwa, H. Maeda, T. Yamamoto
Enhanced diffusion and interdiffusion in HgCdTe from fermi-level effects
H. G. Robinson, M. A. Berding, W. J. Hamilton, K. Kosai, T. DeLyon, W. B. Johnson, B. J. Walker
Strain relief in epitaxial HgCdTe by growth on a reticulated substrate
David R. Rhiger, Sanghamitra Sen, Eli E. Gordon
Critical thickness in the HgCdTe/CdZnTe system
M. A. Berding, W. D. Nix, D. R. Rhiger, S. Sen, A. Sher
HgCdZnTe quaternary materials for lattice-matched two-color detectors
S. M. Johnson, J. L. Johnson, W. J. Hamilton, D. B Leonard, T. A. Strand, E. A. Patten, J. M. Peterson, J. H. Durham, V. K. Randall, T. J. deLyon, J. E. Jensen, M. D. Gorwitz
Misfit relaxation behavior in CdHgTe layers grown by molecular beam epitaxy on CdZnTe substrates
T. Skauli, T. Colin, R. Sjølie, S. Løvold
Spectroscopic evaluation of n-type CdZnTe gamma-ray spectrometers
Y. Nemirovsky, G. Asa, J. Gorelik, A. Peyser
Time of flight experimental studies of CdZnTe radiation detectors
J. C. Erickson, H. W. Yao, R. B. James, H. Hermon, M. Greaves
Transport properties of undoped Cd0.9Zn0.1Te grown by high pressure bridgman technique
Kazuhiko Suzuki, S. Seto, A. Iwata, M. Bingo, T. Sawada, K. Imai
Surface passivation of cadmium zinc telluride radiation detectors by potassium hydroxide solution
Kaushik Chattopadhyay, Miguel Hayes, Jean-Olivier Ndap, Arnold Burger, W. J. Lu, Hylton G. McWhinney, Tony Grady, Ralph B. James
The photoassisted MOVPE growth of ZnSSe using tertiary-butylmercaptan
D. W. Parent, A. Rodriguez, P. Li, X. G. Zhang, G. Zhao, J. E. Ayers, F. C. Jain
Wurtzite CdS on CdTe grown by molecular beam epitaxy
P. Boieriu, R. Sporken, Yan Xin, N. D. Browning, S. Sivananthan
ZnS-based visible-blind UV detectors: Effects of isoelectronic traps
I. K. Sou, Z. H. Ma, G. K. L. Wong
Molecular beam epitaxial growth of HgCdTe on CdZnTe(311)B
F. Aqariden, H. D. Shih, D. Chandra, P. K. Liao
Vacancies in Hg1−xCdxTe
D. Chandra, H. F. Schaake, J. H. Tregilgas, F. Aqariden, M. A. Kinch, A. J. Syllaios
Transmission electron microscopy studies of defects in HgCdTe device structures grown by molecular beam epitaxy
Lijie Zhao, J. S. Speck, R. Rajavel, J. Jensen, D. Leonard, T. Strand, W. Hamilton
Effect of dislocations on performance of LWIR HgCdTe photodiodes
K. Jówikowski, A. Rogalski
In-situ control of temperature and alloy composition of Cd1−xZnxTe grown by molecular beam epitaxy
M. Daraselia, G. Brill, J. W. Garland, V. Nathan, S. Sivananthan
CdZnTe heteroepitaxy on 3″ (112) Si: Interface, surface, and layer characteristics
N. K. Dhar, P. R. Boyd, M. Martinka, J. H. Dinan, L. A. Almeida, N. Goldsman
HgCdTe heteroepitaxy on three-inch (112) CdZnTe/Si: Ellipsometric control of substrate temperature
L. A. Almeida, N. K. Dhar, M. Martinka, J. H. Dinan
Selective epitaxy of cadmium telluride on silicon by MBE
R. Sporken, D. Grajewski, Y. Xin, F. Wiame, G. Brill, P. Boieriu, A. Prociuk, S. Rujirawat, N. K. Dhar, S. Sivananthan
Selective growth of CdTe on Si and GaAs substrates using metalorganic vapor phase epitaxy
R. Zhang, I. Bhat
Impurity segregation in horizontal bridgman grown cadmium zinc telluride
D. J. Reese, Cs. Szeles, K. A. Harris
Extraction of mobile impurities from CdZnTe
Sanghamitra Sen, David R. Rhiger, Charles R. Curtis, Paul R. Norton
Composition and thickness control of thin LPE HgCdTe layers using x-ray diffraction
S. P. Tobin, M. A. Hutchins, P. W. Norton
Percolation problem in boron—Implanted mercury cadmium telluride
N. Mainzer, E. Zolotoyabko
Precise measurements of the dispersion of the index of refraction for Cd1−xZnxTe alloys
F. C. Peiris, S. Lee, U. Bindley, J. K. Furdyna
Shear deformation and strain relaxation in HgCdTe on (211) CdZnTe
T. T. Lam, C. D. Moore, R. L. Forrest, M. S. Goorsky, S. M. Johnson, D. B. Leonard, T. A. Strand, T. J. Delyon, M. D. Gorwitz
MCT infrafed detectors with close to radiatively limited performance at 240 K in the 3–5 µm band
N. T. Gordon, R. S. Hall, C. L. Jones, C. D. Maxey, N. E. Metcalfe, R. A. Catchpole, A. M. White
A model for dark current and multiplication in HgCdTe avalanche photodiodes
S. Velicu, R. Ashokan, S. Sivananthan
A detailed calculation of the auger lifetime in p-type HgCdTe
S. Krishnamurthy, T. N. Casselman
Surface leakage current analysis of ion implanted ZnS-passivated n-on-p HgCdTe diodes in weak inversion
Young-Ho Kim, Soo-Ho Bae, Hee Chul Lee, Choong Ki Kim
Characterization of Hg0.7Cd0.3Te n- on p-type structures obtained by reactive ion etching induced p- to n conversion
J. Antoszewski, C. A. Musca, J. M. Dell, L. Faraone
HgCdTe mid-wavelength IR photovoltaic detectors fabricated using plasma induced junction technology
J. M. Dell, J. Antoszewski, M. H. Rais, C. Musca, J. K. White, B. D. Nener, L. Faraone
Electron beam induced current study of ion beam milling type conversion in molecular beam epitaxy vacancy-doped CdxHg1−xTe
R. Haakenaasen, T. Colin, H. Steen, L. Trosdahl-Iversen
H2-based dry plasma etching for mesa structuring of HgCdTe
E. P. G. Smith, C. A. Musca, D. A. Redfern, J. M. Dell, L. Faraone
Characteristics of gradually doped LWIR diodes by hydrogenation
Young-Ho Kim, Tae-Sik Kim, D. A. Redfern, C. A. Musca, Hee Chul Lee, Choong Ki Kim
TE- and TM-polarized optoelectronic properties of HgCdTe quantum wells
Vinod M. Menon, L. R. Ram-Mohan, I. Vurgaftman, J. R. Meyer
Correlation of arsenic incorporation and its electrical activation in MBE HgCdTe
T. S. Lee, J. Garland, C. H. Grein, M. Sumstine, A. Jandeska, Y. Selamet, S. Sivananthan
SIMS quantification of As and In in Hg1−xCdxTe materials of different x values
Larry Wang, Lily H. Zhang
Analysis of 1/f noise in LWIR HgCdTe photodiodes
Soo Ho Bae, Sang Jun Lee, Young Ho Kim, Hee Chul Lee, Choong Ki Kim
Molecular beam epitaxy of ZnxBe1−xSe: Influence of the substrate nature and epilayer properties
C. Chauvet, E. Tournié, P. Vennéguès, J. P. Faurie
Isolation and control of voids and void-hillocks during molecular beam epitaxial growth of HgCdTe
D. Chandra, F. Aqariden, J. Frazier, S. Gutzler, T. Orent, H. D. Shih