Ausgabe 6/2006
Inhalt (61 Artikel)
HgCdTe detectors operating above 200 K
N. T. Gordon, D. J. Lees, G. Bowen, T. S. Phillips, M. Haigh, C. L. Jones, C. D. Maxey, L. Hipwood, R. A. Catchpole
Fabrication and characterization of two-color midwavelength/long wavelength HgCdTe infrared detectors
E. P. G. Smith, E. A. Patten, P. M. Goetz, G. M. Venzor, J. A. Roth, B. Z. Nosho, J. D. Benson, A. J. Stoltz, J. B. Varesi, J. E. Jensen, S. M. Johnson, W. A. Radford
TV/4 dual-band HgCdTe infrared focal plane arrays with a 25-εm pitch and spatial coherence
J. Baylet, P. Ballet, P. Castelein, F. Rothan, O. Gravrand, M. Fendler, E. Laffosse, J. P. Zanatta, J. P. Chamonal, A. Million, G. Destefanis
Study of the spatial response of reduced pitch Hg1−xCdxTe dual-band detector arrays
O. Gravrand, J. C. Desplanches, C. Delbègue, G. Mathieu, J. Rothman
The HgCdTe electron avalanche photodiode
J. Beck, C. Wan, M. Kinch, J. Robinson, P. Mitra, R. Scritchfield, F. Ma, J. Campbell
Maximum entropy mobility spectrum analysis of HgCdTe heterostructures
Johan Rothman, Jerome Meilhan, Gwladys Perrais, Jean-Pierre Belle, Olivier Gravrand
Characterization of physical-chemical drivers of Hg1−xGdxTe etch rate using time of flight—Secondary ion mass spectrometry and optical interferometry
R. Olshove, G. Garwood, E. Pettijohn, R. Emerson, F. Lua, E. Olson, J. Bangs
Investigation of HgCdTe p-n device structures grown by liquid-phase epitaxy
Changzhen Wang, Steve Tobin, Themis Parodos, David J. Smith
Determination of HgCdTe elasto-plastic properties using nanoindentation
M. Martyniuk, R. H. Sewell, C. A. Musca, J. M. Dell, L. Faraone
Chemical polishing of CdZnTe substrates fabricated from crystals grown by the vertical-gradient freezing method
P. Moravec, P. Höschl, J. Franc, E. Belas, R. Fesh, R. Grill, P. Horodyský, P. Praus
Influence of Substrate Orientation on the Growth of HgCdTe by Molecular Beam Epitaxy
L. A. Almeida, M. Groenert, J. H. Dinan
Epitaxial growth of CdTe on Si through perovskite oxide buffers
Eva M. Campo, Shohei Nakahara, Thomas Hierl, James C. M. Hwang, Yuanping Chen, Gregory Brill, Nibir K. Dhar, Venu Vaithyanathan, Darrell G. Schlom, Xu-Ming Fang, Joel M. Fastenau
The role of lattice mismatch in the deposition of CdTe thin films
S. Neretina, Q. Zhang, R. A. Hughes, J. F. Britten, N. V. Sochinskii, J. S. Preston, P. Mascher
Molecular beam epitaxy growth of HgCdTe on Ge for third-generation infrared detectors
J. P. Zanatta, G. Badano, P. Ballet, C. Largeron, J. Baylet, O. Gravrand, J. Rothman, P. Castelein, J. P. Chamonal, A. Million, G. Destefanis, S. Mibord, E. Brochier, P. Costa
Spin-coated ZnO thin films using ZnO nano-colloid
Swati Sharma, Alex Tran, Omkaram Nalamasu, P. S. Dutta
Interface properties of ZnO nanotips grown on Si substrates
H. Chen, J. Zhong, G. Saraf, Y. Lu, D. H. Hill, S. T. Hsu, Y. Ono
Molecular beam epitaxy—Grown ZnSe nanowires
S. K. Chan, N. Liu, Y. Cai, N. Wang, G. K. L. Wong, I. K. Sou
Simulation, modeling, and crystal growth of Cd0.9Zn0.1Te for nuclear spectrometers
Krishna C. Mandal, Sung Hoon Kang, Michael Choi, Job Bello, Lili Zheng, Hui Zhang, Michael Groza, Utpal N. Roy, Arnold Burger, Gerald E. Jellison, David E. Holcomb, Gomez W. Wright, Joseph A. Williams
Direct growth of high-quality thick CdTe epilayers on Si (211) substrates by metalorganic vapor phase epitaxy for nuclear radiation detection and imaging
M. Niraula, K. Yasuda, H. Ohnishi, H. Takahashi, K. Eguchi, K. Noda, Y. Agata
Oxygen-doped ZnTe phosphors for synchrotron X-ray imaging detectors
Z. T. Kang, H. Menkara, B. K. Wagner, C. J. Summers, R. Durst, Y. Diawara, G. Mednikova, T. Thorson
Characterization of Cd1−xZnxTe crystals grown from a modified vertical bridgman technique
Y. Cui, M. Groza, G. W. Wright, U. N. Roy, A. Burger, L. Li, F. Lu, M. A. Black, R. B. James
Current status of large-area MOVPE growth of HgCdTe device heterostructures for infrared focal plane arrays
C. D. Maxey, J. C. Fitzmaurice, H. W. Lau, L. G. Hipwood, C. S. Shaw, C. L. Jones, P. Capper
High-quality large-area MBE HgCdTe/Si
J. M. Peterson, J. A. Franklin, M. Reddy, S. M. Johnson, E. Smith, W. A. Radford, I. Kasai
Anisotropy in selective metalorganic vapor phase epitaxy of CdTe on GaAs and Si substrates
Ishwara Bhat, Ruichao Zhang
Hybrid deposition of piezoelectric MgxZn1−xO (0≤x≤0.3) on R-sapphire substrates using RF sputtering and MOCVDR-sapphire substrates using RF sputtering and MOCVD
Gaurav Saraf, Ying Chen, Theo Siegrist, Leszek S. Wielunski, Yicheng Lu
SiCl4-based reactive ion etching of ZnO and MgxZn1−xO films on r-sapphire substrates
J. Zhu, G. Saraf, J. Zhong, H. F. Sheng, B. V. Yakshinskiy, Y. Lu
Effect of annealing on the morphology and optoelectrical characteristics of ZnO thin films grown by plasma-assisted molecular beam epitaxy
W. C. T. Lee, M. Henseler, P. Miller, C. H. Swartz, T. H. Myers, R. J. Reeves, S. M. Durbin
Detectivity studies of SMD-packaged ZnSSe and ZnMgS UV detectors
L. S. Mak, S. K. Chan, G. K. L. Wong, I. K. Sou
Elastic strains in heteroepitaxial ZnSe1−xTex on InGaAs/InP (001)
B. Yarlagadda, A. Rodriguez, P. Li, B. I. Miller, F. C. Jain, J. E. Ayers
Study of defect levels in CdTe using thermoelectric effect spectroscopy
Raji Soundararajan, Kelvin G. Lynn, Salah Awadallah, Csaba Szeles, Su-Huai Wei
p-type HgTe/CdTe superlattices for very-long wavelength infrared detectors
H. S. Jung, P. Boieriu, C. H. Grein
Precise arsenic doping of HgCdTe by MBE and effects on compositional interdiffusion
E. C. Piquette, D. D. Edwall, D. L. Lee, J. M. Arias
Internal drift effects on the diffusion of Ag in CdTe
H. Wolf, F. Wagner, Th Wichert, R. Grill, E. Belas, Isolde Collaboration
Accurate measurement of composition, carrier concentration, and photoconductive lifetime in Hg1−xCdxTe grown by molecular beam epitaxy
C. H. Swartz, S. Chandril, R. P. Tompkins, N. C. Giles, T. H. Myers, D. D. Edwall, E. C. Piquette, C. S. Kim, I. Vurgaftman, J. R. Meyer
Passivation effect on optical and electrical properties of molecular beam epitaxy-grown HgCdTe/CdTe/Si layers
Rajni Kiran, Shubhrangshu Mallick, Suk-Ryong Hahn, T. S. Lee, Sivalingam Sivananthan, Siddhartha Ghosh, P. S. Wijewarnasuriya
Effects of hydrogen on majority carrier transport and minority carrier lifetimes in long-wavelength infrared HgCdTe on Si
P. Boieriu, C. H. Grein, J. Garland, S. Velicu, C. Fulk, A. Stoltz, L. Bubulac, J. H. Dinan, S. Sivananthan
HgCdTe negative luminescence devices for cold shielding and other applications
J. R. Lindle, W. W. Bewley, I. Vurgaftman, J. R. Meyer, J. L. Johnson, M. L. Thomas, E. C. Piquette, W. E. Tennant, E. P. Smith, S. M. Johnson
Tunneling in long-wavelength infrared HgCdTe photodiodes
S. Krishnamurthy, M. A. Berding, H. Robinson, A. Sher
LWIR HgCdTe on Si detector performance and analysis
M. Carmody, J. G. Pasko, D. Edwall, R. Bailey, J. Arias, M. Groenert, L. A. Almeida, J. H. Dinan, Y. Chen, G. Brill, N. K. Dhar
A comparison of gamma radiation effects on bromine- and hydrazine-treated HgCdTe photodiodes
Min Yung Lee, Young Ho Kim, Nam Ho Lee, Yong Soo Lee, Hee Chul Lee
Surface structure of (111)A HgCdTe
J. D. Benson, J. B. Varesi, A. J. Stoltz, E. P. G. Smith, S. M. Johnson, M. Jaime-Vasquez, J. K. Markunas, L. A. Almeida, J. C. Molstad
Investigation of HgCdTe surface films and their removal
J. B. Varesi, J. D. Benson, M. Jaime-Vasquez, M. Martinka, A. J. Stoltz, J. H. Dinan
The structure of the Si (211) surface
C. Fulk, S. Sivananthan, D. Zavitz, R. Singh, M. Trenary, Y. P. Chen, G. Brill, N. Dhar
In-situ spectroscopic study of the As and Te on the Si (112) surface for high-quality epitaxial layers
M. Jaime-Vasquez, M. Martinka, R. N. Jacobs, M. Groenert
Examination of the effects of high-density plasmas on the surface of HgCdTe
A. J. Stoltz, M. Jaime-Vasquez, J. D. Benson, J. B. Varesi, M. Martinka
Hydrogenation of HgCdTe epilayers on Si substrates using glow discharge plasma
T. D. Golding, R. Hellmer, L. Bubulac, J. H. Dinan, L. Wang, W. Zhao, M. Carmody, H. O. Sankur, D. Edwall
p to n conversion in SWIR mercury cadmium telluride with ion milling
D. Chandra, H. F. Schaake, F. Aqariden, T. Teherani, M. A. Kinch, P. D. Dreiske, D. F. Weirauch, H. D. Shih
Effects of a-Si:H resist vacuum-lithography processing on HgCdTe
R. N. Jacobs, E. W. Robinson, M. Jaime-Vasquez, A. J. Stoltz, J. Markunas, L. A. Almeida, P. R. Boyd, J. H. Dinan, L. Salamanca-Riba
Investigation of HgTe-HgCdTe superlattices by high-resolution X-ray diffraction
S. D. Hatch, R. H. Sewell, J. M. Dell, L. Faraone, C. R. Becker, B. Usher
Thin film transmission matrix approach to fourier transform infrared analysis of HgCdTe multilayer heterostructures
D. D. Lofgreen, C. M. Peterson, A. A. Buell, M. F. Vilela, S. M. Johnson
Mapping of zinc content in Cd1−xZnxTe by optical methods
P. Horodyský, J. Franc, R. Grill, P. Hlídek, P. Moravec, J. Bok, P. Höschl
Material quality characterization of CdZnTe substrates for HgCdTe epitaxy
G. A. Carini, C. Arnone, A. E. Bolotnikov, G. S. Camarda, R. De Wames, J. H. Dinan, J. K. Markunas, B. Raghothamachar, S. Sivananthan, R. Smith, J. Zhao, Z. Zhong, R. B. James
Full-wafer spatial mapping of macrodefects on HgCdTe epitaxial wafers grown by MBE
John A. Roth, Brett Z. Nosho, John E. Jensen