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Journal of Electronic Materials

Ausgabe 6/2006

Inhalt (61 Artikel)

Foreword

S. Sivananthan, N. K. Dhar, Y. Anter

HgCdTe detectors operating above 200 K

N. T. Gordon, D. J. Lees, G. Bowen, T. S. Phillips, M. Haigh, C. L. Jones, C. D. Maxey, L. Hipwood, R. A. Catchpole

Fabrication and characterization of two-color midwavelength/long wavelength HgCdTe infrared detectors

E. P. G. Smith, E. A. Patten, P. M. Goetz, G. M. Venzor, J. A. Roth, B. Z. Nosho, J. D. Benson, A. J. Stoltz, J. B. Varesi, J. E. Jensen, S. M. Johnson, W. A. Radford

TV/4 dual-band HgCdTe infrared focal plane arrays with a 25-εm pitch and spatial coherence

J. Baylet, P. Ballet, P. Castelein, F. Rothan, O. Gravrand, M. Fendler, E. Laffosse, J. P. Zanatta, J. P. Chamonal, A. Million, G. Destefanis

Study of the spatial response of reduced pitch Hg1−xCdxTe dual-band detector arrays

O. Gravrand, J. C. Desplanches, C. Delbègue, G. Mathieu, J. Rothman

The HgCdTe electron avalanche photodiode

J. Beck, C. Wan, M. Kinch, J. Robinson, P. Mitra, R. Scritchfield, F. Ma, J. Campbell

Maximum entropy mobility spectrum analysis of HgCdTe heterostructures

Johan Rothman, Jerome Meilhan, Gwladys Perrais, Jean-Pierre Belle, Olivier Gravrand

Investigation of HgCdTe p-n device structures grown by liquid-phase epitaxy

Changzhen Wang, Steve Tobin, Themis Parodos, David J. Smith

Determination of HgCdTe elasto-plastic properties using nanoindentation

M. Martyniuk, R. H. Sewell, C. A. Musca, J. M. Dell, L. Faraone

Chemical polishing of CdZnTe substrates fabricated from crystals grown by the vertical-gradient freezing method

P. Moravec, P. Höschl, J. Franc, E. Belas, R. Fesh, R. Grill, P. Horodyský, P. Praus

Epitaxial growth of CdTe on Si through perovskite oxide buffers

Eva M. Campo, Shohei Nakahara, Thomas Hierl, James C. M. Hwang, Yuanping Chen, Gregory Brill, Nibir K. Dhar, Venu Vaithyanathan, Darrell G. Schlom, Xu-Ming Fang, Joel M. Fastenau

The role of lattice mismatch in the deposition of CdTe thin films

S. Neretina, Q. Zhang, R. A. Hughes, J. F. Britten, N. V. Sochinskii, J. S. Preston, P. Mascher

Molecular beam epitaxy growth of HgCdTe on Ge for third-generation infrared detectors

J. P. Zanatta, G. Badano, P. Ballet, C. Largeron, J. Baylet, O. Gravrand, J. Rothman, P. Castelein, J. P. Chamonal, A. Million, G. Destefanis, S. Mibord, E. Brochier, P. Costa

Spin-coated ZnO thin films using ZnO nano-colloid

Swati Sharma, Alex Tran, Omkaram Nalamasu, P. S. Dutta

Interface properties of ZnO nanotips grown on Si substrates

H. Chen, J. Zhong, G. Saraf, Y. Lu, D. H. Hill, S. T. Hsu, Y. Ono

Molecular beam epitaxy—Grown ZnSe nanowires

S. K. Chan, N. Liu, Y. Cai, N. Wang, G. K. L. Wong, I. K. Sou

Simulation, modeling, and crystal growth of Cd0.9Zn0.1Te for nuclear spectrometers

Krishna C. Mandal, Sung Hoon Kang, Michael Choi, Job Bello, Lili Zheng, Hui Zhang, Michael Groza, Utpal N. Roy, Arnold Burger, Gerald E. Jellison, David E. Holcomb, Gomez W. Wright, Joseph A. Williams

Oxygen-doped ZnTe phosphors for synchrotron X-ray imaging detectors

Z. T. Kang, H. Menkara, B. K. Wagner, C. J. Summers, R. Durst, Y. Diawara, G. Mednikova, T. Thorson

Characterization of Cd1−xZnxTe crystals grown from a modified vertical bridgman technique

Y. Cui, M. Groza, G. W. Wright, U. N. Roy, A. Burger, L. Li, F. Lu, M. A. Black, R. B. James

Current status of large-area MOVPE growth of HgCdTe device heterostructures for infrared focal plane arrays

C. D. Maxey, J. C. Fitzmaurice, H. W. Lau, L. G. Hipwood, C. S. Shaw, C. L. Jones, P. Capper

High-quality large-area MBE HgCdTe/Si

J. M. Peterson, J. A. Franklin, M. Reddy, S. M. Johnson, E. Smith, W. A. Radford, I. Kasai

SiCl4-based reactive ion etching of ZnO and MgxZn1−xO films on r-sapphire substrates

J. Zhu, G. Saraf, J. Zhong, H. F. Sheng, B. V. Yakshinskiy, Y. Lu

Effect of annealing on the morphology and optoelectrical characteristics of ZnO thin films grown by plasma-assisted molecular beam epitaxy

W. C. T. Lee, M. Henseler, P. Miller, C. H. Swartz, T. H. Myers, R. J. Reeves, S. M. Durbin

Detectivity studies of SMD-packaged ZnSSe and ZnMgS UV detectors

L. S. Mak, S. K. Chan, G. K. L. Wong, I. K. Sou

Elastic strains in heteroepitaxial ZnSe1−xTex on InGaAs/InP (001)

B. Yarlagadda, A. Rodriguez, P. Li, B. I. Miller, F. C. Jain, J. E. Ayers

Study of defect levels in CdTe using thermoelectric effect spectroscopy

Raji Soundararajan, Kelvin G. Lynn, Salah Awadallah, Csaba Szeles, Su-Huai Wei

Internal drift effects on the diffusion of Ag in CdTe

H. Wolf, F. Wagner, Th Wichert, R. Grill, E. Belas, Isolde Collaboration

The nature of point defects in CdTe

P. Fochuk, R. Grill, O. Panchuk

Accurate measurement of composition, carrier concentration, and photoconductive lifetime in Hg1−xCdxTe grown by molecular beam epitaxy

C. H. Swartz, S. Chandril, R. P. Tompkins, N. C. Giles, T. H. Myers, D. D. Edwall, E. C. Piquette, C. S. Kim, I. Vurgaftman, J. R. Meyer

Minority carrier lifetimes in HgCdTe alloys

S. Krishnamurthy, M. A. Berding, Z. G. Yu

Passivation effect on optical and electrical properties of molecular beam epitaxy-grown HgCdTe/CdTe/Si layers

Rajni Kiran, Shubhrangshu Mallick, Suk-Ryong Hahn, T. S. Lee, Sivalingam Sivananthan, Siddhartha Ghosh, P. S. Wijewarnasuriya

Effects of hydrogen on majority carrier transport and minority carrier lifetimes in long-wavelength infrared HgCdTe on Si

P. Boieriu, C. H. Grein, J. Garland, S. Velicu, C. Fulk, A. Stoltz, L. Bubulac, J. H. Dinan, S. Sivananthan

HgCdTe negative luminescence devices for cold shielding and other applications

J. R. Lindle, W. W. Bewley, I. Vurgaftman, J. R. Meyer, J. L. Johnson, M. L. Thomas, E. C. Piquette, W. E. Tennant, E. P. Smith, S. M. Johnson

Tunneling in long-wavelength infrared HgCdTe photodiodes

S. Krishnamurthy, M. A. Berding, H. Robinson, A. Sher

VLWIR HgCdTe detector current-voltage analysis

Angelo Scotty Gilmore, James Bangs, Amanda Gerrish

LWIR HgCdTe on Si detector performance and analysis

M. Carmody, J. G. Pasko, D. Edwall, R. Bailey, J. Arias, M. Groenert, L. A. Almeida, J. H. Dinan, Y. Chen, G. Brill, N. K. Dhar

A comparison of gamma radiation effects on bromine- and hydrazine-treated HgCdTe photodiodes

Min Yung Lee, Young Ho Kim, Nam Ho Lee, Yong Soo Lee, Hee Chul Lee

Surface structure of (111)A HgCdTe

J. D. Benson, J. B. Varesi, A. J. Stoltz, E. P. G. Smith, S. M. Johnson, M. Jaime-Vasquez, J. K. Markunas, L. A. Almeida, J. C. Molstad

Investigation of HgCdTe surface films and their removal

J. B. Varesi, J. D. Benson, M. Jaime-Vasquez, M. Martinka, A. J. Stoltz, J. H. Dinan

The structure of the Si (211) surface

C. Fulk, S. Sivananthan, D. Zavitz, R. Singh, M. Trenary, Y. P. Chen, G. Brill, N. Dhar

Examination of the effects of high-density plasmas on the surface of HgCdTe

A. J. Stoltz, M. Jaime-Vasquez, J. D. Benson, J. B. Varesi, M. Martinka

Hydrogenation of HgCdTe epilayers on Si substrates using glow discharge plasma

T. D. Golding, R. Hellmer, L. Bubulac, J. H. Dinan, L. Wang, W. Zhao, M. Carmody, H. O. Sankur, D. Edwall

p to n conversion in SWIR mercury cadmium telluride with ion milling

D. Chandra, H. F. Schaake, F. Aqariden, T. Teherani, M. A. Kinch, P. D. Dreiske, D. F. Weirauch, H. D. Shih

Effects of a-Si:H resist vacuum-lithography processing on HgCdTe

R. N. Jacobs, E. W. Robinson, M. Jaime-Vasquez, A. J. Stoltz, J. Markunas, L. A. Almeida, P. R. Boyd, J. H. Dinan, L. Salamanca-Riba

Investigation of HgTe-HgCdTe superlattices by high-resolution X-ray diffraction

S. D. Hatch, R. H. Sewell, J. M. Dell, L. Faraone, C. R. Becker, B. Usher

Mapping of zinc content in Cd1−xZnxTe by optical methods

P. Horodyský, J. Franc, R. Grill, P. Hlídek, P. Moravec, J. Bok, P. Höschl

Material quality characterization of CdZnTe substrates for HgCdTe epitaxy

G. A. Carini, C. Arnone, A. E. Bolotnikov, G. S. Camarda, R. De Wames, J. H. Dinan, J. K. Markunas, B. Raghothamachar, S. Sivananthan, R. Smith, J. Zhao, Z. Zhong, R. B. James

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