Ausgabe 8/2003
Inhalt (16 Artikel)
New layer transfers obtained by the SmartCut process
H. Moriceau, F. Fournel, B. Aspar, B. Bataillou, A. Beaumont, C. Morales, A. M. Cartier, S. Pocas, C. Lagahe, E. Jalaguier, A. Soubie, B. Biasse, N. Sousbie, S. Sartori, J. F. Michaud, F. Letertre, O. Rayssac, I. Cayrefourcq, C. Richtarch, N. Daval, C. Aulentte, T. Akatsu, B. Osternaud, B. Ghyselen, C. Mazuré
An anisotropic elasticity model of strain partitioning in epitaxial thin layers
Peter Wakeland, Tariq Khraishi, David Zubia
Gas-cluster ion-beam smoothing of chemo-mechanical-polish processed GaSb(100) substrates
L. P. Allen, T. G. Tetreault, C. Santeufemio, X. Li, W. D. Goodhue, D. Bliss, M. Tabat, K. S. Jones, G. Dallas, D. Bakken, C. Sung
Heterogeneous silicon integration by ultra-high vacuum wafer bonding
M. J. Kim, R. W. Carpenter
Growth of GaN on porous SiC and GaN substrates
C. K. Inoki, T. S. Kuan, C. D. Lee, Ashutosh Sagar, R. M. Feenstra, D. D. Koleske, D. J. Díaz, P. W. Bohn, I. Adesida
Improvement of heteroepitaxial growth by the use of twist-bonded compliant substrate: Role of the surface plasticity
G. Patriarche, E. Le Bourhis
Crystalline oxide-based devices on silicon substrates
K. Eisenbeiser, R. Droopad, Z. Yu, C. Overgaard, J. Kulik, J. Finder, S. M. Smith, S. Voight, D. Penunuri
Layer-transfer process for silicon-on-insulator with improved manufacturability
Alexander Usenko
Wafer bonding for III–V on insulator structures
S. Hayashi, D. Bruno, R. Sandhu, M. S. Goorsky
HgCdTe on Si: Present status and novel buffer layer concepts
T. D. Golding, O. W. Holland, M. J. Kim, J. H. Dinan, L. A. Almeida, J. M. Arias, J. Bajaj, H. D. Shih, W. P. Kirk
Enhanced thermal stability of a sputtered titanium-nitride film as a diffusion barrier for capacitor-bottom electrodes
Dong-Soo Yoon, Jae Sung Roh, Sung-Man Lee, Hong Koo Baik
Bake stability of CdTe and ZnS on HgCdTe: An x-ray photoelectron spectroscopy study
S. K. Jha, P. Srivastava, R. Pal, Anjali, H. K. Sehgal, Hee Chul Lee, O. P. Agnihotri, B. B. Gong
Determination of carrier-transfer length from side-wall quantum well to quantum wire by micro-photoluminescence scanning
Z. -F. Li, W. Lu, X. -Q. Liu, X. -S. Chen, S. C. Shen, Y. Fu, M. Willander, H. H. Tan, C. Jagadish