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Journal of Electronic Materials

Ausgabe 8/2006

Inhalt (14 Artikel)

Analysis of leakage currents in MOCVD grown GaInAsSb based photodetectors operating at 2 µm

Vinay Bhagwat, Yegao Xiao, Ishwara Bhat, Partha Dutta, Tamer F. Refaat, M. Nurul Abedin, Vikram Kumar

Nanoparticle ordering by dewetting of Co on SiO2

C. Favazza, J. Trice, A. K. Gangopadhyay, H. Garcia, R. Sureshkumar, Ramki Kalyanaraman

Epitaxial growth of CdTe on (211) silicon mesas formed by deep reactive ion etching

Jay Molstad, Phil Boyd, Justin Markunas, David J. Smith, Ed Smith, Eli Gordon, J. H. Dinan

Novel abrasive-free planarization of 4H-SiC (0001) using catalyst

Hideyuki Hara, Yasuhisa Sano, Hidekazu Mimura, Kenta Arima, Akihisa Kubota, Keita Yagi, Junji Murata, Kazuto Yamauch

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