Ausgabe 8/2011
2010 U.S. Workshop on the Physics and Chemistry of II-VI Materials
Inhalt (41 Artikel)
Planar n-on-p HgCdTe FPAs for LWIR and VLWIR Applications
R. Wollrab, A. Bauer, H. Bitterlich, M. Bruder, S. Hanna, H. Lutz, K.-M. Mahlein, T. Schallenberg, J. Ziegler
Large-Format HgCdTe Dual-Band Long-Wavelength Infrared Focal-Plane Arrays
E. P. G. Smith, G. M. Venzor, A. M. Gallagher, M. Reddy, J. M. Peterson, D. D. Lofgreen, J. E. Randolph
Effect of As Passivation on Vapor-Phase Epitaxial Growth of Ge on (211)Si as a Buffer Layer for CdTe Epitaxy
Shashidhar Shintri, Sunil Rao, Wendy Sarney, Saurabh Garg, Witold Palosz, Sudhir Trivedi, Priyalal Wijewarnasuriya, Ishwara Bhat
Low-Roughness Plasma Etching of HgCdTe Masked with Patterned Silicon Dioxide
Z. H. Ye, W. D. Hu, W. T. Yin, J. Huang, C. Lin, X. N. Hu, R. J. Ding, X. S. Chen, W. Lu, L. He
Optimization of Microlenses for InSb Infrared Focal-Plane Arrays
N. Guo, W. D. Hu, X. S. Chen, C. Meng, Y. Q. Lv, W. Lu
A 2D Full-Band Monte Carlo Study of HgCdTe-Based Avalanche Photodiodes
Enrico Bellotti, Michele Moresco, Francesco Bertazzi
Spectral Response Model of Backside-Illuminated HgCdTe Detectors
A. I. D’Souza, E. Robinson, P. S. Wijewarnasuriya, M. G. Stapelbroek
Low-Pressure Chemical Vapor Deposition of CdS and Atomic Layer Deposition of CdTe Films for HgCdTe Surface Passivation
Nicholas Licausi, Sunil Rao, Ishwara Bhat
Nonvolatile Memory Effect in Indium Gallium Arsenide-Based Metal–Oxide–Semiconductor Devices Using II–VI Tunnel Insulators
P.-Y. Chan, M. Gogna, E. Suarez, S. Karmakar, F. Al-Amoody, B. I. Miller, F. C. Jain
Internal Electric Field Behavior of Cadmium Zinc Telluride Radiation Detectors Under High Carrier Injection
G. Yang, A. E. Bolotnikov, G. S. Camarda, Y. Cui, A. Hossain, K. H. Kim, R. Gul, R. B. James
The Effects of Microvoid Defects on MWIR HgCdTe-Based Diodes
C. A. Billman, L. A. Almeida, P. Smith, J. M. Arias, A. Chen, D. Lee, E. C. Piquette
Core–Shell Zn x Cd1−x Se/Zn y Cd1−y Se Quantum Dots for Nonvolatile Memory and Electroluminescent Device Applications
Fuad Al-Amoody, Ernesto Suarez, Angel Rodriguez, E. Heller, Wenli Huang, F. Jain
Molecular Beam Epitaxy Growth of HgCdTe on Large-Area Si and CdZnTe Substrates
M. Reddy, J. M. Peterson, T. Vang, J. A. Franklin, M. F. Vilela, K. Olsson, E. A. Patten, W. A. Radford, J. W. Bangs, L. Melkonian, E. P. G. Smith, D. D. Lofgreen, S. M. Johnson
Spatial Wavefunction-Switched (SWS) InGaAs FETs with II–VI Gate Insulators
F. C. Jain, B. Miller, E. Suarez, P.-Y. Chan, S. Karmakar, F. Al-Amoody, M. Gogna, J. Chandy, E. Heller
Effect of Cycle Annealing Parameters on Dislocation Density Reduction for HgCdTe on Si
S. Farrell, Mulpuri V. Rao, G. Brill, Y. Chen, P. Wijewarnasuriya, N. Dhar, D. Benson, K. Harris
Microstructural Characterization of CdTe(211)B/ZnTe/Si(211) Heterostructures Grown by Molecular Beam Epitaxy
W. F. ZHAO, R. N. JACOBS, M. JAIME-VASQUEZ, L. O. BUBULAC, DAVID J. SMITH
Dual-Color InAs/GaSb Superlattice Focal-Plane Array Technology
Robert Rehm, Martin Walther, Frank Rutz, Johannes Schmitz, Andreas Wörl, Jan-Michael Masur, Ralf Scheibner, Joachim Wendler, Johann Ziegler
The Effect of Various Detector Geometries on the Performance of CZT Using One Crystal
Aaron L. Washington II, Lucile C. Teague, Martine C. Duff, Arnold Burger, Michael Groza, Vladimir Buliga
Three-State Quantum Dot Gate FETs Using ZnS-ZnMgS Lattice-Matched Gate Insulator on Silicon
Supriya Karmakar, Ernesto Suarez, Faquir C. Jain
History-Dependent Impact Ionization Theory Applied to HgCdTe e-APDs
Johan Rothman, Laurent Mollard, Sylvain Goût, Leo Bonnefond, Jerôme Wlassow
Nonvolatile Silicon Memory Using GeO x -Cladded Ge Quantum Dots Self-Assembled on SiO2 and Lattice-Matched II–VI Tunnel Insulator
M. Gogna, E. Suarez, P.-Y. Chan, F. Al-Amoody, S. Karmakar, F. Jain
Effects of Varying MBE Growth Conditions on Layered Zn-Se-Te Structures
Bidisha Roy, Aidong Shen, Maria C. Tamargo, Igor L. Kuskovsky
Reduction of Dislocation Density in HgCdTe on Si by Producing Highly Reticulated Structures
A. J. Stoltz, J. D. Benson, M. Carmody, S Farrell, P. S. Wijewarnasuriya, G. Brill, R. Jacobs, Y. Chen
High-Quality (211)B CdTe on (211)Si Substrates Using Metalorganic Vapor-Phase Epitaxy
S. R. Rao, S. S. Shintri, J. K. Markunas, R. N. Jacobs, I. B. Bhat
Three-Dimensional Electromagnetic and Electrical Simulation of HgCdTe Pixel Arrays
Craig A. Keasler, Enrico Bellotti
Chemical Polishing of CdTe and CdZnTe in Iodine–Methanol Etching Solutions
V. G. Ivanits’ka, P. Moravec, J. Franc, V. M. Tomashik, Z. F. Tomashik, K. Mašek, P. S. Chukhnenko, P. Höschl, J. Ulrych
Si Wafer Thinning Techniques Compatible With Epitaxy of CdTe Buffer Layers
J. K. Markunas, R. N. Jacobs, P. J. Smith, J. Pellegrino
Wet Etching of HgCdTe in Aqueous Bromine Solutions: a Quantitative Chemical Approach
A. Causier, I. Gerard, M. Bouttemy, A. Etcheberry, C. Pautet, J. Baylet, L. Mollard
Status of p-on-n Arsenic-Implanted HgCdTe Technologies
L. Mollard, G. Destefanis, G. Bourgeois, A. Ferron, N. Baier, O. Gravrand, J. P. Barnes, A. M. Papon, F. Milesi, A. Kerlain, L. Rubaldo
HgCdTe Photon Trapping Structure for Broadband Mid-Wavelength Infrared Absorption
J. G. A. Wehner, E. P. G. Smith, G. M. Venzor, K. D. Smith, A. M. Ramirez, B. P. Kolasa, K. R. Olsson, M. F. Vilela
Dislocation Analysis in (112)B HgCdTe/CdTe/Si
J. D. Benson, S. Farrell, G. Brill, Y. Chen, P. S. Wijewarnasuriya, L. O. Bubulac, P. J. Smith, R. N. Jacobs, J. K. Markunas, M. Jaime-Vasquez, L. A. Almeida, A. Stoltz, U. Lee, M. F. Vilela, J. Peterson, S. M. Johnson, D. D. Lofgreen, D. Rhiger, E. A. Patten, P. M. Goetz
CdZnTe Radiation Detectors with HgTe/HgCdTe Superlattice Contacts for Leakage Current Reduction
Y. Chang, C. H. Grein, C. R. Becker, X. J. Wang, Q. Duan, S. Ghosh, P. Dreiske, R. Bommena, J. Zhao, M. Carmody, F. Aqariden, S. Sivananthan
Microstructure of Heteroepitaxial ZnTe Grown by Molecular Beam Epitaxy on Si(211) Substrates
X. J. Wang, Y. Chang, C. R. Becker, C. H. Grein, S. Sivananthan, R. Kodama