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Journal of Electronic Materials

Ausgabe 9/2008

Inhalt (52 Artikel)

Foreword

S. Sivananthan, Y. Anter, N. K. Dhar

Surface Morphology and Defect Formation Mechanisms for HgCdTe (211)B Grown by Molecular Beam Epitaxy

Yong Chang, C.R. Becker, C.H. Grein, J. Zhao, C. Fulk, T. Casselman, R. Kiran, X.J. Wang, E. Robinson, S.Y. An, S. Mallick, S. Sivananthan, T. Aoki, C.Z. Wang, D.J. Smith, S. Velicu, J. Zhao, J. Crocco, Y. Chen, G. Brill, P.S. Wijewarnasuriya, N. Dhar, R. Sporken, V. Nathan

Status of LWIR HgCdTe-on-Silicon FPA Technology

M. Carmody, J.G. Pasko, D. Edwall, E. Piquette, M. Kangas, S. Freeman, J. Arias, R. Jacobs, W. Mason, A. Stoltz, Y. Chen, N.K. Dhar

MBE HgCdTe on Alternative Substrates for FPA Applications

Li He, Xiangliang Fu, Qingzhu Wei, Weiqiang Wang, Lu Chen, Yan Wu, Xiaoning Hu, Jianrong Yang, Qinyao Zhang, Ruijun Ding, Xiaoshuang Chen, Wei Lu

Characterization of PbSnSe/CdTe/Si (211) Epilayers Grown by Molecular Beam Epitaxy

X.J. Wang, C. Fulk, F.H. Zhao, D.H. Li, S. Mukherjee, Y. Chang, R. Sporken, R. Klie, Z. Shi, C.H. Grein, S. Sivananthan

Reduction of Inclusions in (CdZn)Te and CdTe:In Single Crystals by Post-Growth Annealing

E. Belas, M. Bugár, R. Grill, J. Franc, P. Moravec, P. Hlídek, P. Höschl

Thermoelectric Effect Spectroscopy and Photoluminescence of High-Resistivity CdTe:In

Hassan Elhadidy, Jan Franc, Eduard Belas, Pavel Hlídek, Pavel Moravec, Roman Grill, Pavel Hoschl

Structural Analysis of CdTe Hetero-epitaxy on (211) Si

J.D. Benson, R.N. Jacobs, J.K. Markunas, M. Jaime-Vasquez, P.J. Smith, L.A. Almeida, M. Martinka, M.F. Vilela, U. Lee

ZnO TFT Devices Built on Glass Substrates

J. Zhu, H. Chen, G. Saraf, Z. Duan, Y. Lu, S.T. Hsu

Traces of HgCdTe Defects as Revealed by Etch Pits

J.R. Yang, X.L. Cao, Y.F. Wei, L. He

Plasma-Cleaned InSb (112)B for Large-Area Epitaxy of HgCdTe Sensors

M. Jaime-Vasquez, M. Martinka, A.J. Stoltz, R.N. Jacobs, J.D. Benson, L.A. Almeida, J.K. Markunas

Strain Reduction in Selectively Grown CdTe by MBE on Nanopatterned Silicon on Insulator (SOI) Substrates

R. Bommena, T. Seldrum, L. Samain, R. Sporken, S. Sivananthan, S.R.J. Brueck

Impulse Response Time Measurements in Hg0.7Cd0.3Te MWIR Avalanche Photodiodes

Gwladys Perrais, Johan Rothman, Gerard Destefanis, Jean-Paul Chamonal

MBE Growth of HgCdTe on Large-Area Si and CdZnTe Wafers for SWIR, MWIR and LWIR Detection

M. Reddy, J.M. Peterson, D.D. Lofgreen, J.A. Franklin, T. Vang, E.P.G. Smith, J.G.A. Wehner, I. Kasai, J.W. Bangs, S.M. Johnson

Nonequilibrium Operation of Arsenic Diffused Long-Wavelength Infrared HgCdTe Photodiodes

Priyalal S. Wijewarnasuriya, P.Y. Emelie, Arvind D’Souza, Gregory Brill, Maryn G. Stapelbroek, Silviu Velicu, Yuanping Chen, Chris Grein, Sivalingam Sivananthan, Nibir K. Dhar

As Doping in (Hg,Cd)Te: An Alternative Point of View

Janet E. Hails, Stuart J.C. Irvine, David J. Cole-Hamilton, Jean Giess, Michael R. Houlton, Andrew Graham

Latest Developments of HgCdTe e-APDs at CEA LETI-Minatec

Johan Rothman, Gwladys Perrais, Philippe Ballet, L. Mollard, S. Gout, J.-P. Chamonal

Nanowires in the CdHgTe Material System

R. Haakenaasen, E. Selvig, S. Hadzialic, T. Skauli, V. Hansen, J.E. Tibballs, L. Trosdahl-Iversen, H. Steen, S. Foss, J. Taftø, M. Halsall, J. Orr

Noise Attributes of LWIR HDVIP HgCdTe Detectors

A.I. D’Souza, M.G. Stapelbroek, E.W. Robinson, C. Yoneyama, H.A. Mills, M.A. Kinch, M.R. Skokan, H.D. Shih

Gated IR Imaging with 128 × 128 HgCdTe Electron Avalanche Photodiode FPA

Jeff Beck, Milton Woodall, Richard Scritchfield, Martha Ohlson, Lewis Wood, Pradip Mitra, Jim Robinson

Nanotrenches Induced by Catalyst Particles on ZnSe Surfaces

S.K. Chan, S.K. Lok, G. Wang, Y. Cai, N. Wang, I.K. Sou

Effects of Surface Processing on the Response of CZT Gamma Detectors: Studies with a Collimated Synchrotron X-Ray Beam

A. Hossain, A.E. Bolotnikov, G.S. Camarda, Y. Cui, S. Babalola, A. Burger, R.B. James

Modeling of LWIR HgCdTe Auger-Suppressed Infrared Photodiodes under Nonequilibrium Operation

P.Y. Emelie, S. Velicu, C.H. Grein, J.D. Phillips, P.S. Wijewarnasuriya, N.K. Dhar

Anisotropic Surface Roughness in Molecular-Beam Epitaxy CdTe (211)B/Ge(211)

Giacomo Badano, Xavier Baudry, Philippe Ballet, Philippe Duvaut, Alain Million, Eric Micoud, Sabeur Kaismoune, Paul Fougères, Sophie Mibord, Pierre Tran-Van, Arnaud Etcheberry

Characterization of HgCdTe MWIR Back-Illuminated Electron-Initiated Avalanche Photodiodes

M.B. Reine, J.W. Marciniec, K.K. Wong, T. Parodos, J.D. Mullarkey, P.A. Lamarre, S.P. Tobin, R.W. Minich, K.A. Gustavsen, M. Compton, G.M. Williams

Modeling of Copper SIMS Profiles in Thin HgCdTe

H.F. Schaake, M.A. Kinch, F. Aqariden

Fabrication and Characterization of MOVPE-Grown CdTe-on-Si Heterojunction Diode-Type Gamma-Ray Detectors

M. Yokota, K. Yasuda, M. Niraula, K. Nakamura, H. Ohashi, R. Tanaka, M. Omura, S. Minoura, I. Shingu, Y. Agata

Substrate-Removed HgCdTe-Based Focal-Plane Arrays for Short-Wavelength Infrared Astronomy

E.C. Piquette, D.D. Edwall, H. Arnold, A. Chen, J. Auyeung

High-Operating-Temperature MWIR Detector Diodes

H.F. Schaake, M.A. Kinch, D. Chandra, F. Aqariden, P.K. Liao, D.F. Weirauch, C.-F. Wan, R.E. Scritchfield, W.W. Sullivan, J.T. Teherani, H.D. Shih

Dielectric Charge Screening of Dislocations and Ionized Impurities in PbSe and MCT

S.L. Elizondo, F. Zhao, J. Kar, J. Ma, J. Smart, D. Li, S. Mukherjee, Z. Shi

Modeling of Recombination in HgCdTe

C.H. Grein, M.E. Flatté, Yong Chang

An Initial Investigation of Nitrogen Doping of Wide-Bandgap HgCdTe During Molecular-Beam Epitaxy Using Ar/N Plasmas

T.J. de Lyon, R.D. Rajavel, A.T. Hunter, J.E. Jensen, M.D. Jack, S.L. Bailey, R.E. Kvaas, V.K. Randall, S.M. Johnson

ZnO and Related Materials for Sensors and Light-Emitting Diodes

S.J. Pearton, W.T. Lim, J.S. Wright, L.C. Tien, H.S. Kim, D.P. Norton, H.T. Wang, B.S. Kang, F. Ren, J. Jun, J. Lin, A. Osinsky

MBE-Grown Cubic ZnS Nanowires

S.K. Chan, S.K. Lok, G. Wang, Y. Cai, N. Wang, K.S. Wong, I.K. Sou

Light-Induced Tellurium Enrichment on CdZnTe Crystal Surfaces Detected by Raman Spectroscopy

Samantha A. Hawkins, Eliel Villa-Aleman, Martine C. Duff, Doug B. Hunter, Arnold Burger, Michael Groza, Vladimir Buliga, David R. Black

Defects in HgTe and CdHgTe Grown by Molecular Beam Epitaxy

E. Selvig, C.R. Tonheim, T. Lorentzen, K.O. Kongshaug, T. Skauli, R. Haakenaasen

Vapor-Phase Growth of Bulk Crystals of Cadmium Telluride and Cadmium Zinc Telluride on Gallium Arsenide Seeds

J.T. Mullins, B.J. Cantwell, A. Basu, Q. Jiang, A. Choubey, A.W. Brinkman, B.K. Tanner

LWIR HgCdTe Detectors Grown on Ge Substrates

M.F. Vilela, D.D. Lofgreen, E.P.G. Smith, M.D. Newton, G.M. Venzor, J.M. Peterson, J.J. Franklin, M. Reddy, Y. Thai, E.A. Patten, S.M. Johnson, M.Z. Tidrow

Effect of Atmosphere on n-Type Hg1–x Cd x Te Surface after Different Wet Etching Treatments: An Electrical and Structural Study

R. Kiran, R. Sporken, T.N. Casselman, P.Y. Emelie, R. Kodama, Y. Chang, F. Aqariden, S. Velicu, J. Zhao, S. Sivananthan

Relevance of Thermal Mismatch in Large-Area Composite Substrates for HgCdTe Heteroepitaxy

R.N. Jacobs, L.A. Almeida, J. Markunas, J. Pellegrino, M. Groenert, M. Jaime-Vasquez, N. Mahadik, C. Andrews, S.B. Qadri, T. Lee, M. Kim

Avalanche Mechanism in p +-n −-n + and p +-n Mid-Wavelength Infrared Hg1−x Cd x Te Diodes on Si Substrates

Shubhrangshu Mallick, Koushik Banerjee, Silviu Velicu, Christoph Grein, Siddhartha Ghosh, Jun Zhao

Epitaxial Lead Chalcogenides on Si for Mid-IR Detectors and Emitters Including Cavities

H. Zogg, M. Arnold, F. Felder, M. Rahim, C. Ebneter, I. Zasavitskiy, N. Quack, S. Blunier, J. Dual

Thermoelectric Characteristics in MBE-Grown HgCdTe-Based Superlattices

S. Velicu, C.H. Grein, J. Zhao, Y. Chang, S.-Y. An, A. Yadav, K. Pipe, W. Clark

Erratum

Thermoelectric Characteristics in MBE-Grown HgCdTe-Based Superlattices

S. Velicu, C.H. Grein, J. Zhao, Y. Chang, S.-Y. An, A. Yadav, K.P. Pipe

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