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Zeitschrift

Journal of Electronic Materials

Journal of Electronic Materials 9/2016

Ausgabe 9/2016

2015 U.S. Workshop on the Physics and Chemistry of II-VI Materials. Guest Editors: S. Sivananthan and N.K. Dhar

Inhaltsverzeichnis ( 33 Artikel )

31.05.2016 | Ausgabe 9/2016

Macro-loading Effects in Inductively Coupled Plasma Etched Mercury Cadmium Telluride

Palash Apte, Kimon Rybnicek, Andrew Stoltz

06.06.2016 | Ausgabe 9/2016

Analysis of Etched CdZnTe Substrates

J. D. Benson, L. O. Bubulac, M. Jaime-Vasquez, C. M. Lennon, J. M. Arias, P. J. Smith, R. N. Jacobs, J. K. Markunas, L. A. Almeida, A. Stoltz, P. S. Wijewarnasuriya, J. Peterson, M. Reddy, K. Jones, S. M. Johnson, D. D. Lofgreen

09.05.2016 | Ausgabe 9/2016

Confirmation of Auger-1 Minority-Carrier Lifetimes in Hg0.77Cd0.23Te and Prediction of Dark Current for Long-Wave Infrared Focal-Plane Arrays

V. Destefanis, A. Kerlain

03.05.2016 | Ausgabe 9/2016

Nondestructive Characterization of Residual Threading Dislocation Density in HgCdTe Layers Grown on CdZnTe by Liquid-Phase Epitaxy

Y. Fourreau, K. Pantzas, G. Patriarche, V. Destefanis

13.04.2016 | Ausgabe 9/2016

Comparing FDTD and Ray-Tracing Models in Numerical Simulation of HgCdTe LWIR Photodetectors

Marco Vallone, Michele Goano, Francesco Bertazzi, Giovanni Ghione, Wilhelm Schirmacher, Stefan Hanna, Heinrich Figgemeier

02.05.2016 | Ausgabe 9/2016

HgCdTe Detectors for Space and Science Imaging: General Issues and Latest Achievements

O. Gravrand, J. Rothman, C. Cervera, N. Baier, C. Lobre, J. P. Zanatta, O. Boulade, V. Moreau, B. Fieque

22.04.2016 | Ausgabe 9/2016

MCT-Based LWIR and VLWIR 2D Focal Plane Detector Arrays for Low Dark Current Applications at AIM

S. Hanna, D. Eich, K.-M. Mahlein, W. Fick, W. Schirmacher, R. Thöt, J. Wendler, H. Figgemeier

25.05.2016 | Ausgabe 9/2016

Joint FDTD-Optical/FEM-Electrical Numerical Simulation of Reflection-Type Subwavelength-Microstructure InSb Infrared Focal-Plane Arrays

J. L. He, W. D. Hu, Z. H. Ye, Y. Q. Lv, X. S. Chen, W. Lu

14.04.2016 | Ausgabe 9/2016

Mid-Wave HgCdTe FPA Based on P on N Technology: HOT Recent Developments. NETD: Dark Current and 1/f Noise Considerations

A. Kerlain, A. Brunner, D. Sam-Giao, N. Pére-Laperne, L. Rubaldo, V. Destefanis, F. Rochette, C. Cervera

30.06.2016 | Ausgabe 9/2016 Open Access

Status of HgCdTe Barrier Infrared Detectors Grown by MOCVD in Military University of Technology

M. Kopytko, K. Jóźwikowski, P. Martyniuk, W. Gawron, P. Madejczyk, A. Kowalewski, O. Markowska, A. Rogalski, J. Rutkowski

12.04.2016 | Ausgabe 9/2016

Hybrid Hamiltonian and Green's Function Approach for Studying Native Point Defect Levels in Semiconductor Compounds and Superlattices

Srini Krishnamurthy, Derek Van Orden, Zhi-Gang Yu

21.06.2016 | Ausgabe 9/2016

Dynamics of Kinetically Limited Strain and Threading Dislocations in Temperature- and Compositionally Graded ZnSSe/GaAs (001) Metamorphic Heterostructures

Tedi Kujofsa, J. E. Ayers

09.05.2016 | Ausgabe 9/2016

High-Operating Temperature HgCdTe: A Vision for the Near Future

D. Lee, M. Carmody, E. Piquette, P. Dreiske, A. Chen, A. Yulius, D. Edwall, S. Bhargava, M. Zandian, W. E. Tennant

20.05.2016 | Ausgabe 9/2016

Investigation of Substrate Effects on Interface Strain and Defect Generation in MBE-Grown HgCdTe

R. Gu, W. Lei, J. Antoszewski, L. Faraone

07.04.2016 | Ausgabe 9/2016

Multispectral Detection with Metal-Dielectric Filters: An Investigation in Several Wavelength Bands with Temporal Coupled-Mode Theory

Emeline Lesmanne, Roch Espiau de Lamaestre, Salim Boutami, Cédric Durantin, Laurent Dussopt, Giacomo Badano

17.05.2016 | Ausgabe 9/2016

Estimation of Thickness and Cadmium Composition Distributions in HgCdTe Focal Plane Arrays

S. Mouzali, S. Lefebvre, S. Rommeluère, Y. Ferrec, J. Primot

19.04.2016 | Ausgabe 9/2016

CdTe Photovoltaics for Sustainable Electricity Generation

Amit Munshi, Walajabad Sampath

15.06.2016 | Ausgabe 9/2016

Development of High-Performance eSWIR HgCdTe-Based Focal-Plane Arrays on Silicon Substrates

J. H. Park, J. Pepping, A. Mukhortova, S. Ketharanathan, R. Kodama, J. Zhao, D. Hansel, S. Velicu, F. Aqariden

22.06.2016 | Ausgabe 9/2016

Band Offsets of III–V and II–VI Materials Studied by Temperature-Dependent Internal Photoemission Spectroscopy

A. G. U. Perera, Y. F. Lao, P. S. Wijewarnasuriya, S. S. Krishna

08.04.2016 | Ausgabe 9/2016

A Failure Mode in Dense Infrared Detector Arrays Resulting in Increased Dark Current

Benjamin Pinkie, Enrico Bellotti

28.03.2016 | Ausgabe 9/2016

Electrical Characteristics of Mid-wavelength HgCdTe Photovoltaic Detectors Exposed to Gamma Irradiation

H. Qiao, W. D. Hu, T. Li, X. Y. Li, Y. Chang

28.04.2016 | Ausgabe 9/2016

Analysis of III–V Superlattice nBn Device Characteristics

David R. Rhiger, Edward P. Smith, Borys P. Kolasa, Jin K. Kim, John F. Klem, Samuel D. Hawkins

06.06.2016 | Ausgabe 9/2016

Numerical Device Modeling, Analysis, and Optimization of Extended-SWIR HgCdTe Infrared Detectors

J. Schuster, R. E. DeWames, E. A. DeCuir Jr., E. Bellotti, N. Dhar, P. S. Wijewarnasuriya

23.03.2016 | Ausgabe 9/2016

Surface Leakage Mechanisms in III–V Infrared Barrier Detectors

D. E. Sidor, G. R. Savich, G. W. Wicks

27.04.2016 | Ausgabe 9/2016

Dislocation Reduction in HgCdTe Mesa Structures Formed on CdTe/Si

Sina Simingalam, James Pattison, Yuanping Chen, Priyalal Wijewarnasuriya, Mulpuri V. Rao

24.05.2016 | Ausgabe 9/2016

Effect of Lattice Mismatch on HgCdTe LPE Film Surface Morphology

Quanzhi Sun, Yanfeng Wei, Juan Zhang, Ruiyun Sun

20.05.2016 | Ausgabe 9/2016

High-Temperature Characteristics of an InAsSb/AlAsSb n+Bn Detector

David Z. Ting, Alexander Soibel, Linda Höglund, Cory J. Hill, Sam A. Keo, Anita Fisher, Sarath D. Gunapala

13.04.2016 | Ausgabe 9/2016

Hole Transport in Arsenic-Doped Hg1−x Cd x Te with x ≥ 0.5

G. A. Umana-Membreno, H. Kala, S. Bains, N. D. Akhavan, J. Antoszewski, C. D. Maxey, L. Faraone

02.05.2016 | Ausgabe 9/2016

High-Quality AgGaTe2 Layers on Si Substrates with Ag2Te Buffer Layers

Aya Uruno, Masakazu Kobayashi

29.06.2016 | Ausgabe 9/2016

Opto-electronic Properties of Mid-Wavelength: n Type II InAs/InAs1−x Sb x and Hg1−x Cd x Te

Roger E. De Wames

12.04.2016 | Ausgabe 9/2016

Dry etched SiO2 Mask for HgCdTe Etching Process

Y. Y. Chen, Z. H. Ye, C. H. Sun, L. G. Deng, S. Zhang, W. Xing, X. N. Hu, R. J. Ding, L. He

11.05.2016 | Ausgabe 9/2016

Dark Current Characterization of SW HgCdTe IRFPAs Detectors on Si Substrate with Long Time Integration

P. Y. Song, Z. H. Ye, A. B. Huang, H. L. Chen, X. N. Hu, R. J. Ding, L. He

07.06.2016 | Ausgabe 9/2016

Passivation Effect of Atomic Layer Deposition of Al2O3 Film on HgCdTe Infrared Detectors

Peng Zhang, Zhen-Hua Ye, Chang-Hong Sun, Yi-Yu Chen, Tian-Ning Zhang, Xin Chen, Chun Lin, Ring-Jun Ding, Li He

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