Ausgabe 9/2017
2016 U.S. Workshop on the Physics and Chemistry of II-VI Materials. Guest Editors: S. Sivananthan and N.K. Dhar
Inhalt (19 Artikel)
Carrier Lifetimes of Iodine-Doped CdMgTe/CdSeTe Double Heterostructures Grown by Molecular Beam Epitaxy
S. Sohal, M. Edirisooriya, O. S. Ogedengbe, J. E. Petersen, C. H. Swartz, E. G. LeBlanc, T. H. Myers, J. V. Li, M. Holtz
Characterization of n-Type and p-Type Long-Wave InAs/InAsSb Superlattices
A. E. Brown, N. Baril, D. Zuo, L. A. Almeida, J. Arias, S. Bandara
Characterization of HgCdTe Films Grown on Large-Area CdZnTe Substrates by Molecular Beam Epitaxy
F. Erdem Arkun, Dennis D. Edwall, Jon Ellsworth, Sheri Douglas, Majid Zandian, Michael Carmody
Determining and Controlling the Magnesium Composition in CdTe/CdMgTe Heterostructures
E. G. LeBlanc, M. Edirisooriya, O. S. Ogedengbe, O. C. Noriega, P. A. R. D. Jayathilaka, S. Rab, C. H. Swartz, D. R. Diercks, G. L. Burton, B. P. Gorman, A. Wang, T. M. Barnes, T. H. Myers
Development and Production of Array Barrier Detectors at SCD
P. C. Klipstein, E. Avnon, Y. Benny, E. Berkowicz, Y. Cohen, R. Dobromislin, R. Fraenkel, G. Gershon, A. Glozman, E. Hojman, E. Ilan, Y. Karni, O. Klin, Y. Kodriano, L. Krasovitsky, L. Langof, I. Lukomsky, I. Nevo, M. Nitzani, I. Pivnik, N. Rappaport, O. Rosenberg, I. Shtrichman, L. Shkedy, N. Snapi, R. Talmor, R. Tessler, E. Weiss, A. Tuito
Diffusion Mechanism for Arsenic in Intrinsic and Extrinsic Conditions in HgCdTe
T. Grenouilloux, A. Ferron, N. Péré-Laperne, D. Mathiot
Dry Etching Characteristics of MOVPE-Grown CdTe Epilayers in CH4, H2, Ar ECR Plasmas
K. Yasuda, M. Niraula, N. Araki, M. Miyata, S. Kitagawa, M. Kojima, J. Ozawa, S. Tsubota, T. Yamaguchi, Y. Agata
Empirical Study of the Disparity in Radiation Tolerance of the Minority-Carrier Lifetime Between II–VI and III–V MWIR Detector Technologies for Space Applications
Geoffrey D. Jenkins, Christian P. Morath, Vincent M. Cowan
HgTe Quantum Dots for Near-, Mid-, and Long-Wavelength IR Devices
W. Palosz, S. Trivedi, D. Zhang, G. Meissner, K. Olver, E. DeCuir Jr., P. S. Wijewarnasuriya, J. L. Jensen
Impact of CdZnTe Substrates on MBE HgCdTe Deposition
J. D. Benson, L. O. Bubulac, M. Jaime-Vasquez, J. M. Arias, P. J. Smith, R. N. Jacobs, J. K. Markunas, L. A. Almeida, A. Stoltz, P. S. Wijewarnasuriya, J. Peterson, M. Reddy, K. Jones, S. M. Johnson, D. D. Lofgreen
Iodine Doping of CdTe and CdMgTe for Photovoltaic Applications
O. S. Ogedengbe, C. H. Swartz, P. A. R. D. Jayathilaka, J. E. Petersen, S. Sohal, E. G. LeBlanc, M. Edirisooriya, K. N. Zaunbrecher, A. Wang, T. M. Barnes, T. H. Myers
Micro-diffraction Investigation of Localized Strain in Mesa-etched HgCdTe Photodiodes
Aymeric Tuaz, Philippe Ballet, Xavier Biquard, François Rieutord
Progress of MCT Detector Technology at AIM Towards Smaller Pitch and Lower Dark Current
D. Eich, W. Schirmacher, S. Hanna, K. M. Mahlein, P. Fries, H. Figgemeier
Simulation of Small-Pitch HgCdTe Photodetectors
Marco Vallone, Michele Goano, Francesco Bertazzi, Giovanni Ghione, Wilhelm Schirmacher, Stefan Hanna, Heinrich Figgemeier
The Numerical–Experimental Enhanced Analysis of HOT MCT Barrier Infrared Detectors
K. Jóźwikowski, J. Piotrowski, A. Jóźwikowska, M. Kopytko, P. Martyniuk, W. Gawron, P. Madejczyk, A. Kowalewski, O. Markowska, A. Martyniuk, A. Rogalski
Variable-Field Hall Effect Analysis of HgCdTe Epilayers with Very Low Doping Density
Justin Easley, Erdem Arkun, Michael Carmody, Jamie Phillips