Ausgabe Sonderheft 1/2008
Proceedings of the 12th International Conference on Defects - Recognition, Imaging and Physics in Semiconductors (DRIP-XII 2007) ; Guest Editors: Ute Zeimer and Jens W. Tomm
Inhalt (78 Artikel)
Correlation between spatially resolved solar cell efficiency and carrier lifetime of multicrystalline silicon
K. Ramspeck, K. Bothe, J. Schmidt, R. Brendel
Infrared light emission from porous silicon
Guobin Jia, Winfried Seifert, Tzanimir Arguirov, Martin Kittler
Lithium-drifted, silicon radiation detectors for harsh radiation environments
J. Grant, C. Buttar, M. Brozel, A. Keffous, A. Cheriet, K. Bourenane, A. Bourenane, F. Kezzoula, H. Menari
Vacancies in as-grown CZ silicon crystals observed by low-temperature ultrasonic measurements
Hiroshi Yamada-Kaneta, Terutaka Goto, Yuichi Nemoto, Koji Sato, Masatoshi Hikin, Yasuhiro Saito, Shintaro Nakamura
On the characterisation of grown-in defects in Czochralski-grown Si and Ge
J. Vanhellemont, J. Van Steenbergen, F. Holsteyns, P. Roussel, M. Meuris, K. Młynarczyk, P. Śpiewak, W. Geens, I. Romandic
Effect of point defects on the recombination activity of copper precipitates in p-type Czochralski silicon
Weiyan Wang, Deren Yang, Xuegong Yu, Duanlin Que
Radially non-uniform interaction of nitrogen with silicon wafers
V. Akhmetov, G. Kissinger, A. Fischer, G. Morgenstern, G. Ritter, M. Kittler
Gettering of iron in silicon by boron implantation
A. Haarahiltunen, H. Talvitie, H. Savin, O. Anttila, M. Yli-Koski, M. I. Asghar, J. Sinkkonen
Microstructure of a-plane () GaN ELOG stripe patterns with different in-plane orientation
Tim Wernicke, Ute Zeimer, Martin Herms, Markus Weyers, Michael Kneissl, Gert Irmer
Anisotropic strain on phonons in a-plane GaN layers studied by Raman scattering
G. Irmer, T. Brumme, M. Herms, T. Wernicke, M. Kneissl, M. Weyers
Cathodoluminescence study of GaN-based film structures
D. S. Jiang, U. Jahn, J. Chen, D. Y. Li, S. M. Zhang, J. J. Zhu, D. G. Zhao, Z. S. Liu, H. Yang, K. Ploog
Irradiation effects on AlGaN HFET devices and GaN layers
Sonia Gnanapragasam, Eberhard Richter, Frank Brunner, Andrea Denker, Richard Lossy, Michael Mai, Friedrich Lenk, Jörg Opitz-Coutureau, Gerhard Pensl, Jens Schmidt, Ute Zeimer, Liun Wang, Baskar Krishnan, Markus Weyers, Jaochim Würfl, Günther Tränkle
Study of in-depth strain variation in ion-irradiated GaN
Martin Herms, Ute Zeimer, Gnanapragasam Sonia, Frank Brunner, Eberhard Richter, Markus Weyers, Günther Tränkle, Thomas Behm, Gert Irmer, Gerhard Pensl, Andrea Denker, Jörg Opitz-Coutureau
Band offset diagnostics of advanced dielectrics
Piotr Edelman, Marshall Wilson, John D’Amico, Alexandre Savtchouk, Jacek Lagowski
Interpretation of lifetime and defect spectroscopy measurements by generalized rate equations
T. Hahn, S. Schmerler, S. Hahn, J. R. Niklas, B. Gruendig-Wendrock
Investigation of defects in polyhedral oligomeric silsesquioxanes based organic light emitting diodes
Cédric Renaud, Yves Josse, Chih-Wen Lee, Thien-Phap Nguyen
Effect of electrical operation on the defect states in organic semiconductors
Thien Phap Nguyen, Cédric Renaud, Chun Hao Huang, Chih-Nan Lo, Chih-Wen Lee, Chain-Shu Hsu
Defects in nanostructures with ripened InAs/GaAs quantum dots
L. Nasi, C. Bocchi, F. Germini, M. Prezioso, E. Gombia, R. Mosca, P. Frigeri, G. Trevisi, L. Seravalli, S. Franchi
Thermal instability of electron traps in InAs/GaAs quantum dot structures
M. Kaniewska, O. Engström, M. Kaczmarczyk, G. Zaremba
Detection of the interlayer at the GaAs-on-InGaP interface in MOVPE InGaP/GaAs by the dark field method
C. Frigeri, G. Attolini, M. Bosi, C. Pelosi, F. Germini
Domain-wall induced magneto-resistive memory in ferromagnetic (Ga, Mn)As nanostructures
Tadeusz Wosinski, Tadeusz Figielski, Andrzej Morawski, Andrzej Makosa, Viktor Osinniy, Jerzy Wrobel, Janusz Sadowski
Point defects in SiGe alloys: structural guessing based on electronic transition analysis
A. Mesli, P. Kruszewski, L. Dobaczewski, Vl. Kolkovsky, A. Nylandsted Larsen, N. V. Abrosimov
Evaluation of poly-Si thin film crystallized by solid green laser annealing using UV/visible Raman spectroscopy
Atsushi Ogura, Yasuto Kakemura, Daisuke Kosemura, Tetsuya Yoshida, Miyuki Masaki, Kenichirou Nishida, Ryusuke Kawakami, Naoya Yamamoto
Microscopic and spectroscopic mapping of dislocation-related photoluminescence in multicrystalline silicon wafers
M. Inoue, H. Sugimoto, M. Tajima, Y. Ohshita, A. Ogura
Laser-induced defect creation in 300 mm SOI-wafer analyzed by use of photoelastic imaging
Kristian Schulz, Hans D. Geiler, Marc Herden
Study of the degradation of AlGaAs-based high-power laser bars: V defects
A. Martín-Martín, M. Avella, M. Pommiès, J. Jiménez, M. P. Iñiguez, M. Oudart, J. Nagle
Identification of degradation mechanisms in high-power laser bars using by-emitter degradation studies
Stephen Bull, Jens W. Tomm, Eric C. Larkins
Thermal processes in high-power laser bars investigated by spatially resolved thermoreflectance
Dorota Pierścińska, Anna Kozlowska, Kamil Pierściński, Maciej Bugajski, Jens W. Tomm, Mathias Ziegler, Fritz Weik
Defect investigation and temperature analysis of high-power AlGaInP laser diodes during catastrophic optical damage
Marwan Bou Sanayeh, Peter Brick, Wolfgang Schmid, Bernd Mayer, Martin Müller, Martin Reufer, Klaus Streubel, Sandy Schwirzke-Schaaf, Jens W. Tomm, Andreas Danilewsky, Gerd Bacher
Spatial variations of carrier and defect concentration in VGF GaAs:Si
Martina Baeumler, Frank Börner, Ulrich Kretzer, Max Scheffer-Czygan, Thomas Bünger, Joachim Wagner
Introduction of defects during the dry etching of InP photonic structures: a cathodo-luminescence study
Manuel Avella, Juan Jiménez, Frédéric Pommereau, Jean-Pieere Landesman, Ahmed Rhallabi
SIMS depth profiling of Mg back-diffusion in (AlGaIn)N light-emitting diodes
Lutz Kirste, Klaus Köhler, Manfred Maier, Michael Kunzer, Markus Maier, Joachim Wagner
The evolution of the ion implantation damage in device processing
M. L. Polignano, I. Mica, V. Bontempo, F. Cazzaniga, M. Mariani, A. Mauri, G. Pavia, F. Sammiceli, G. Spoldi
Characterization of strained Si wafers by X-ray diffraction techniques
Takayoshi Shimura, Kohta Kawamura, Masahiro Asakawa, Heiji Watanabe, Kiyoshi Yasutake, Atsushi Ogura, Kazunori Fukuda, Osami Sakata, Shigeru Kimura, Hiroki Edo, Satoshi Iida, Masataka Umeno
Real time surface morphology analysis of semiconductor materials and devices using 4D interference microscopy
Paul Montgomery, Freddy Anstotz, Gyasi Johnson, Renaud Kiefer
In situ X-ray diffraction study of epitaxial growth of ordered Fe3Si films
B. Jenichen, V. M. Kaganer, W. Braun, R. Shayduk, B. Tinkham, J. Herfort
Influence of defects in opal photonic crystals on the optical transmission imaged by near-field scanning optical microscopy
K. Bittkau, R. Carius, A. Bielawny, R. B. Wehrspohn
The origin and reduction of dislocations in Gallium Nitride
R. A. Oliver, M. J. Kappers, C. McAleese, R. Datta, J. Sumner, C. J. Humphreys
Initial process effects on the surface morphology and structural property of the AlN epilayers
Xiaohong Chen, Shuping Li, Junyong Kang
Electron-beam-induced current study of electrical activity of dislocations in 4H–SiC homoeptaxial film
Bin Chen, Jun Chen, Takashi Sekiguchi, Akimasa Kinoshita, Hirofumi Matsuhata, Hirotaka Yamaguchi, Ichirou Nagai, Hajime Okumura
High-resolution photoinduced transient spectroscopy of defect centers in vanadium-doped semi-insulating SiC
Paweł Kamiński, Roman Kozłowski, Marcin Miczuga, Michał Pawłowski, Michał Kozubal, Mariusz Pawłowski
Evaluation of photoelectrical properties of Bi doped CdTe crystals
A. Kadys, K. Jarasiunas, E. Saucedo, E. Dieguez, J. C. Launay, D. Verstraeten
Study of nanopipes formed in silicon wafers using helium implantation by SEM, RBS and SIMS methods
A. V. Frantskevich, A. M. Saad, A. V. Mazanik, N. V. Frantskevich, A. K. Fedotov, V. S. Kulinkauskas, A. A. Patryn
Dislocation-related photoluminescence from processed Si
Andrzej Misiuk, Konstantin S. Zhuravlev, Wojciech Jung, Marek Prujszczyk, Edward A. Steinman
Numerical analysis of Double Gate and Gate All Around MOSFETs with bulk trap states
M. A. Abdi, F. Djeffal, D. Arar, M. L. Hafiane
Structure properties of carbon implanted silicon layers
K. Kh. Nussupov, N. B. Beisenkhanov, I. V. Valitova, K. A. Mit’, D. M. Mukhamedshina, E. A. Dmitrieva
Diffusion profiles and magnetic properties of Mn-implanted silicon after thermal annealing
Lee Chow, J. C. Gonzalez, E. Del Barco, R. Vanfleet, A. Misiuk, M. Prujszczyk, A. Shunmugavelu, G. Chai, J. Bak-Misiuk
White beam topography of 300 mm Si wafers
A. N. Danilewsky, J. Wittge, A. Rack, T. Weitkamp, R. Simon, T. Baumbach, P. McNally
Formation of insulating oxygen-containing layer on the silicon wafer surface using low-temperature hydrogenation
O. Zinchuk, A. Saad, N. Drozdov, A. Fedotov, S. Kobeleva, A. Mazanik, A. Patryn, V. Pilipenko, A. Pushkarchuk
SEM–EBIC investigation of silicon, compensated by zinc during high temperature diffusion annealing
E. B. Yakimov, V. V. Privezentsev
Optical characterisation of silicon nitride thin films grown by novel remote plasma sputter deposition
Gianfranco Claudio, Sonya Calnan, Kevin Bass, Matt Boreland
Structural modifications induced in hydrogenated amorphous Si/Ge multilayers by heat treatments
C. Frigeri, M. Serényi, A. Csik, Z. Erdélyi, D. L. Beke, L. Nasi
New method to control defect reaction induced by electron-hole recombination for long-living widegap light-emitting devices
Masahiro Adachi, Yutaka Hashimoto, Katsuhisa Kanzaki, Shuji Ohashi, Yasuhiro Morita, Tomoki Abe, Hirofumi Kasada, Koshi Ando, Michio Tajima
Characterisation of cubic SiC layers VPE grown on Si substrates of different conductivity
C. Frigeri, G. Attolini, M. Bosi, B. E. Watts
Impact of electron beam irradiation on the cathodoluminescence intensity for ZnO and GaN
B. Dierre, X. L. Yuan, Y. Z. Yao, M. Yokoyama, T. Sekiguchi
Correlation between the free carrier lifetime and total amount of deep centers in ZnO single crystals
Vladimir Gavryushin, Arunas Kadys, Ramunas Aleksiejunas, Kestutis Jarasiunas
Dynamical study of the radiative recombination processes in GaN/AlGaN QWs
Mahmood Sabooni, Morteza Esmaeili, Hamid Haratizadeh, Bo Monemar, Hiroshi Amano
Cathodoluminescent investigations of In x Ga1−x N layers
Yana V. Domracheva, Valentin N. Jmerik, Tatiana B. Popova, Maria V. Zamoryanskaya
EBIC imaging using scanning transmission electron microscopy: experiment and analysis
Shigeyasu Tanaka, Hiroki Tanaka, Tadahiro Kawasaki, Mikio Ichihashi, Takayoshi Tanji, Koji Arafune, Yoshio Ohshita, Masafumi Yamaguchi
Explanation of positive and negative PICTS peaks in SI-GaAs
S. Schmerler, T. Hahn, S. Hahn, J. R. Niklas, B. Gründig-Wendrock
Study of Schottky diodes made on Mn doped p-type InP
Karel Zdansky, Halyna Kozak, Bruno Sopko, Ladislav Pekarek
Influence of doping on the reliability of AlGaInP LEDs
Paola Altieri-Weimar, Arndt Jaeger, Thomas Lutz, Peter Stauss, Klaus Streubel, Klaus Thonke, Rolf Sauer
Analysis of dislocation cell patterns in as-grown compound materials (GaAs, CaF2)
Uta Juda, Christiane Frank-Rotsch, Peter Rudolph
Statistical methods of determining the QD dimensions based on atomic force microscopy measurements
T. Piotrowski, M. Kaczmarczyk
Omega-Scan: an X-ray tool for the characterization of crystal properties
Hans Berger, Hans-Arthur Bradaczek, Hans Bradaczek
Application of computational intelligence to analysis of PITS spectral images for defect centres in semi-insulating materials
Stanisław Jankowski, Pawel Kamiński, Janusz Będkowski, Zbigniew Szymański, Przemysław Danilewicz, Roman Kozłowski, Michał Pawłowski
Local cathodoluminescent study of the multilayers semiconductors nanostructures
Maria V. Zamoryanskaya, Samuil G. Konnikov
Investigation of defects in Cu(In,Ga)(S,Se)2 films using the photocurrent decay technique
A. Saad, A. Odrinski, M. Tivanov, N. Drozdov, A. Fedotov, V. Gremenok, A. Mazanik, A. Patryn, V. Zalesski, E. Zaretskaya
Influence of plasma treatments on the microstructure and electrophysical properties of SnO x thin films synthesized by magnetron sputtering and sol–gel technique
D. M. Mukhamedshina, K. A. Mit’, N. B. Beisenkhanov, E. A. Dmitriyeva, I. V. Valitova