Ausgabe 10/2002
Inhalt (11 Artikel)
Electrical conductivity of indium sesquioxide thin film
T. Bak, J. Nowotny, M. Rekas, C. C. Sorrell, P. A. Banda, W. Wlodarski
Electro-optical studies in chemically deposited La/Nd doped (Cd-Pb) S films
S. Bhushan, M. Mukherjee, P. Bose
Characterization of the metatitanate systems (1−x)BaTiO3xNiTiO3 and (1−x)BaTiO3xZnTiO3 obtained by the peroxide method
V. D. Parvanova, S. K. Andreev
Field emission characteristics of CNTs synthesized by bias-assisted ICPHFCVD and ICPCVD techniques
K. S. Kim, H. Ryu, G. E. Jang
Compound semiconductor interfaces obtained by direct wafer bonding in hydrogen or forming gas
G. Kästner, O. Breitenstein, R. Scholz, M. Reiche
Preparation of insulated metal substrate for MBGA package
Jiman Zhu, Yudong Liu, Liquan Guo, Jusheng Ma, Daobin Mu
TiOx interlayer characterization for sol–gel derived Pb(Zr, Ti)O3 thin films on titanium foil
Q. Zou, H. E. Ruda, R. N. Sodhi
Processing characteristics of PTCR ceramics with low sintering temperature
Z. Z. Huang, S. U. Adikary, H. L. W. Chan
Electrical and optical properties of (Sb2Se3)2 (Sb2Te3)1 thin films
A. M. Farid, E. Abd El-Wahabb, M. Fadel
Studies on buried layer resistors
G. Yadagiri, K. K. Goswami, K. S. Gurumurthy, M. Satyam, K. N. Shankara
Erratum
Monolithic Integration of III-V optical interconnects on Si using SiGe virtual subtrates
V. K. Yang, M. E. Groenert, G. Taraschi, C. W. Leitz, A. J. Pitera, M. T. Currie, Z. Cheng, E. A. Fitzgerald