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Journal of Materials Science: Materials in Electronics

Ausgabe 2/2010

Inhalt (18 Artikel)

Sol–gel ZnO in organic transistor-based non-volatile memory

Tianyi Wu, Kean C. Aw, Noviana Tjitra Salim, Wei Gao

Structural and electrical properties of Ba5SmTi3V7O30 ceramics

P. S. Sahoo, A. Panigrahi, S. K. Patri, R. N. P. Choudhary

Microstructural properties of ZnO:Sn thin films deposited by intermittent spray pyrolysis process

F. Kadi Allah, L. Cattin, M. Morsli, A. Khelil, N. Langlois, J. C. Bernède

Structural analysis of an InGaN/GaN based light emitting diode by X-ray diffraction

M. K. Öztürk, Yu Hongbo, B. Sarıkavak, S. Korçak, S. Özçelik, E. Özbay

Preparation and characterization of cordierite filled PTFE laminates for microwave substrate applications

K. P. Murali, S. Rajesh, K. Stanly Jacob, Om Prakash, A. R. Kulkarni, R. Ratheesh

High voltage SnO2 varistors prepared from nanocrystalline powders

Mohammad Maleki Shahraki, Seyyed Ali Shojaee, Ali Nemati, Mohammad Ali Faghihi Sani

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