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Erschienen in:
2014 | OriginalPaper | Buchkapitel
Large Signal Physical Operation of a III–V Nitride Based Double Velocity Transit Time Device: A Potential Source For THz Imaging
verfasst von : Moumita Mukherjee
Erschienen in: Physics of Semiconductor Devices
Verlag: Springer International Publishing
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Performance of GaN/AlGaN based Double Velocity Avalanche Transit Time device is proposed in this paper, for the first time, for useful application in THz-imaging. The device is designed and analyzed by developing a generalized non-linear large-signal simulator that includes effects of elevated temperature, phonon-bottle-necking, scattering limited mobility-velocity and parasitic resistance. The simulation reveals that the proposed device is capable of generating a considerable pulsed power ~8 × 10
10
W/m
2
with an efficiency of 8 % at 1.4 THz under 50 % large signal modulation. Dc characterization of the fabricated diodes is in agreement with simulation results.