Skip to main content
Erschienen in: Journal of Materials Science 11/2018

01.03.2018 | Energy materials

Layer-controlled synthesis of wafer-scale MoSe2 nanosheets for photodetector arrays

verfasst von: Tian-Jun Dai, Xu-Dong Fan, Yi-Xuan Ren, Shuang Hou, Yi-Yu Zhang, Ling-Xuan Qian, Yan-Rong Li, Xing-Zhao Liu

Erschienen in: Journal of Materials Science | Ausgabe 11/2018

Einloggen

Aktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.

search-config
loading …

Abstract

Despite huge efforts have been devoted to investigating ultrathin layers of two-dimensional (2D) transition-metal dichalcogenides (TMDs), their realistic applications in electronics and optoelectronics are hindered by limited scalability and uniformity of 2D thin layers. In this work, a two-step synthesis method was adopted to produce wafer-scale molybdenum diselenide (MoSe2) nanosheets. Molybdenum oxide (MoO3) thin film was initially prepared via atomic layer deposition (ALD) and followed by a selenization process in chemical vapor deposition (CVD) tube furnace. MoSe2 nanosheets with desired thickness can be obtained by tuning ALD cycles in preparing MoO3 layers. The synthesized MoSe2 films exhibited excellent layer controllability, homogeneity and wafer-scale uniformity. Few-layer structure of our MoSe2 with a polycrystalline crystal structure was verified by means of Raman and transmission electron microscopy (TEM) measurements. Moreover, arrays of MoSe2-based photodetectors with different device dimension were fabricated and the photo-responses of the devices were studied. The device exhibited a fast photo-response time of 50 ms, a high on/off ratio of ~ 24 and a good photo-responsivity of 11.7 mA/W, and it is found that the effective illumination area was a critical factor for application. The work opens up an attractive approach to realize the application of wafer-scale 2D materials in integrated optoelectronic-systems.

Sie haben noch keine Lizenz? Dann Informieren Sie sich jetzt über unsere Produkte:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

Anhänge
Nur mit Berechtigung zugänglich
Literatur
1.
Zurück zum Zitat Novoselov KS, Geim AK, Morozov SV, Jiang D, Zhang Y, Dubonos SV, Grigorieva IV, Firsov AA (2004) Electric field effect in atomically. Thin Carbon Films Sci 306:666–669 Novoselov KS, Geim AK, Morozov SV, Jiang D, Zhang Y, Dubonos SV, Grigorieva IV, Firsov AA (2004) Electric field effect in atomically. Thin Carbon Films Sci 306:666–669
2.
Zurück zum Zitat Geim AK, Novoselov KS (2007) The rising of graphene. Nat Mater 6:183–191CrossRef Geim AK, Novoselov KS (2007) The rising of graphene. Nat Mater 6:183–191CrossRef
3.
Zurück zum Zitat Huang JK, Jiang P, Hsu CL et al (2014) Large-area synthesis of highly crystalline WSe2 monolayers and device applications. ACS Nano 8:923–930CrossRef Huang JK, Jiang P, Hsu CL et al (2014) Large-area synthesis of highly crystalline WSe2 monolayers and device applications. ACS Nano 8:923–930CrossRef
4.
Zurück zum Zitat Lembke D, Kis A (2012) Breakdown of high-performance monolayer MoS2 transistors. ACS Nano 6:10070–10075CrossRef Lembke D, Kis A (2012) Breakdown of high-performance monolayer MoS2 transistors. ACS Nano 6:10070–10075CrossRef
5.
Zurück zum Zitat Radisavljevic B, Whitwick MB, Kis A (2012) Small-signal amplifier based on single-layer MoS2. Appl Phys Lett 101:043103CrossRef Radisavljevic B, Whitwick MB, Kis A (2012) Small-signal amplifier based on single-layer MoS2. Appl Phys Lett 101:043103CrossRef
6.
Zurück zum Zitat Wang H, Yu L, Lee YH et al (2012) Integrated circuits based on bilayer MoS2 transistors. Nano Lett 12:4674–4680CrossRef Wang H, Yu L, Lee YH et al (2012) Integrated circuits based on bilayer MoS2 transistors. Nano Lett 12:4674–4680CrossRef
7.
Zurück zum Zitat Fang H, Chuang S, Chang TC, Takei K, Takahashi T, Javey A (2012) High-performance single layered WSe2 p-FETs with chemically doped contacts. Nano Lett 12:3788–3792CrossRef Fang H, Chuang S, Chang TC, Takei K, Takahashi T, Javey A (2012) High-performance single layered WSe2 p-FETs with chemically doped contacts. Nano Lett 12:3788–3792CrossRef
8.
Zurück zum Zitat Pradhan NR, Garcia C, Holleman J et al (2016) Photoconductivity of few-layered p-WSe2 phototransistors via multiterminal measurements. 2D Mater 3:041004CrossRef Pradhan NR, Garcia C, Holleman J et al (2016) Photoconductivity of few-layered p-WSe2 phototransistors via multiterminal measurements. 2D Mater 3:041004CrossRef
9.
Zurück zum Zitat Jung C, Kim SM, Moon H et al (2015) Highly crystalline CVD-grown multilayer MoSe2 thin film transistor for fast photodetector. Sci Rep 5:15313CrossRef Jung C, Kim SM, Moon H et al (2015) Highly crystalline CVD-grown multilayer MoSe2 thin film transistor for fast photodetector. Sci Rep 5:15313CrossRef
10.
Zurück zum Zitat Fiori G, Bonaccorso F, Iannaccone G, Palacios T, Neumaier D, Seabaugh A, Banerjee SK, Colombo L (2014) Electronics based on two-dimensional materials. Nat Nanotechnol 9:768–779CrossRef Fiori G, Bonaccorso F, Iannaccone G, Palacios T, Neumaier D, Seabaugh A, Banerjee SK, Colombo L (2014) Electronics based on two-dimensional materials. Nat Nanotechnol 9:768–779CrossRef
11.
Zurück zum Zitat Chhowalla M, Jena D, Zhang H (2016) Two-dimensional semiconductors for transistors. Nat Rev Mater 1:16052CrossRef Chhowalla M, Jena D, Zhang H (2016) Two-dimensional semiconductors for transistors. Nat Rev Mater 1:16052CrossRef
12.
Zurück zum Zitat Hu PA, Wang L, Yoon M et al (2013) Highly responsive ultrathin GaS nanosheet photodetectors on rigid and flexible substrates. Nano Lett 13:1649–1654CrossRef Hu PA, Wang L, Yoon M et al (2013) Highly responsive ultrathin GaS nanosheet photodetectors on rigid and flexible substrates. Nano Lett 13:1649–1654CrossRef
13.
Zurück zum Zitat Hu PA, Wen Z, Wang L, Tan P, Xiao K (2012) Synthesis of few-layer GaSe nanosheets for high performance photodetectors. ACS Nano 6:5988–5994CrossRef Hu PA, Wen Z, Wang L, Tan P, Xiao K (2012) Synthesis of few-layer GaSe nanosheets for high performance photodetectors. ACS Nano 6:5988–5994CrossRef
14.
Zurück zum Zitat Matte HSSR, Plowman B, Datta R, Rao CNR (2011) Graphene analogues of layered metal selenides. Dalton Trans 40:10322–10325CrossRef Matte HSSR, Plowman B, Datta R, Rao CNR (2011) Graphene analogues of layered metal selenides. Dalton Trans 40:10322–10325CrossRef
15.
Zurück zum Zitat Larentis S, Fallahazad B, Tutuc E (2012) Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers. Appl Phys Lett 101:223104CrossRef Larentis S, Fallahazad B, Tutuc E (2012) Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers. Appl Phys Lett 101:223104CrossRef
16.
Zurück zum Zitat Ross JS, Wu S, Yu H et al (2013) Electrical control of neutral and charged excitons in a monolayer semiconductor. Nat Commun 4:1474CrossRef Ross JS, Wu S, Yu H et al (2013) Electrical control of neutral and charged excitons in a monolayer semiconductor. Nat Commun 4:1474CrossRef
17.
Zurück zum Zitat Shim GW, Yoo K, Seo SB et al (2014) Large-area single-layer MoSe2 and its van der waals heterostructures. ACS Nano 8:6655–6662CrossRef Shim GW, Yoo K, Seo SB et al (2014) Large-area single-layer MoSe2 and its van der waals heterostructures. ACS Nano 8:6655–6662CrossRef
18.
Zurück zum Zitat Wang X, Gong Y, Shi G et al (2014) Chemical vapor deposition growth of crystalline monolayer MoSe2. ACS Nano 8:5125–5131CrossRef Wang X, Gong Y, Shi G et al (2014) Chemical vapor deposition growth of crystalline monolayer MoSe2. ACS Nano 8:5125–5131CrossRef
19.
Zurück zum Zitat Shaw JC, Zhou H, Chen Y, Weiss NO, Liu Y, Huang Y, Duan X (2014) Chemical vapor deposition growth of monolayer MoSe2 nanosheets. Nano Res 7:511–517CrossRef Shaw JC, Zhou H, Chen Y, Weiss NO, Liu Y, Huang Y, Duan X (2014) Chemical vapor deposition growth of monolayer MoSe2 nanosheets. Nano Res 7:511–517CrossRef
20.
Zurück zum Zitat Chang YH, Zhang W, Zhu Y et al (2014) Monolayer MoSe2 grown by chemical vapor deposition for fast photodetection. ACS Nano 8:8582–8590CrossRef Chang YH, Zhang W, Zhu Y et al (2014) Monolayer MoSe2 grown by chemical vapor deposition for fast photodetection. ACS Nano 8:8582–8590CrossRef
21.
Zurück zum Zitat Kong D, Wang H, Cha JJ, Pasta M, Koski KJ, Yao J, Cui Y (2013) Synthesis of MoS2 and MoSe2 films with vertically aligned layers. Nano Lett 13:1341–1347CrossRef Kong D, Wang H, Cha JJ, Pasta M, Koski KJ, Yao J, Cui Y (2013) Synthesis of MoS2 and MoSe2 films with vertically aligned layers. Nano Lett 13:1341–1347CrossRef
22.
Zurück zum Zitat Zhang Y, Chang TR, Zhou B et al (2014) Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2. Nat Nanotechnol 9:111–115CrossRef Zhang Y, Chang TR, Zhou B et al (2014) Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2. Nat Nanotechnol 9:111–115CrossRef
23.
Zurück zum Zitat Xia J, Huang X, Liu LZ et al (2014) CVD synthesis of large-area, highly crystalline MoSe2 atomic layers on diverse substrates and application to photodetectors. Nanoscale 6:8949–8955CrossRef Xia J, Huang X, Liu LZ et al (2014) CVD synthesis of large-area, highly crystalline MoSe2 atomic layers on diverse substrates and application to photodetectors. Nanoscale 6:8949–8955CrossRef
24.
Zurück zum Zitat Tongay S, Zhou J, Ataca C, Lo K, Matthews TS, Li J, Grossman JC, Wu J (2012) Thermally driven crossover from indirect toward direct bandgap in 2D semiconductors: MoSe2 versus MoS2. Nano Lett 12:5576–5580CrossRef Tongay S, Zhou J, Ataca C, Lo K, Matthews TS, Li J, Grossman JC, Wu J (2012) Thermally driven crossover from indirect toward direct bandgap in 2D semiconductors: MoSe2 versus MoS2. Nano Lett 12:5576–5580CrossRef
25.
Zurück zum Zitat Lu X, Utama MIB, Lin J et al (2014) Large-area synthesis of monolayer and few-layer MoSe2 films on SiO2 substrates. Nano Lett 14:2419–2425CrossRef Lu X, Utama MIB, Lin J et al (2014) Large-area synthesis of monolayer and few-layer MoSe2 films on SiO2 substrates. Nano Lett 14:2419–2425CrossRef
26.
Zurück zum Zitat Song JG, Park J, Lee W et al (2013) Layer-controlled, wafer-scale, and conformal synthesis of tungsten disulfide nanosheets using atomic layer deposition. ACS Nano 7:11333–11340CrossRef Song JG, Park J, Lee W et al (2013) Layer-controlled, wafer-scale, and conformal synthesis of tungsten disulfide nanosheets using atomic layer deposition. ACS Nano 7:11333–11340CrossRef
27.
Zurück zum Zitat Song JG, Ryu GH, Lee SJ et al (2015) Controllable synthesis of molybdenum tungsten disulfide alloy for vertically composition-controlled multilayer. Nat Commun 6:7817CrossRef Song JG, Ryu GH, Lee SJ et al (2015) Controllable synthesis of molybdenum tungsten disulfide alloy for vertically composition-controlled multilayer. Nat Commun 6:7817CrossRef
28.
Zurück zum Zitat Diskus M, Nilsen O, Fjellvag H (2011) Growth of thin films of molybdenum oxide by atomic layer deposition. J Mater Chem 21:705–710CrossRef Diskus M, Nilsen O, Fjellvag H (2011) Growth of thin films of molybdenum oxide by atomic layer deposition. J Mater Chem 21:705–710CrossRef
29.
Zurück zum Zitat Bertuch A, Sundaram G, Saly M, Moser D, Kanjolia R (2014) Atomic layer deposition of molybdenum oxide using bis(tertbutylimido)-bis(dimethylamido) molybdenum. J Vac Sci Technol A 32:01A119CrossRef Bertuch A, Sundaram G, Saly M, Moser D, Kanjolia R (2014) Atomic layer deposition of molybdenum oxide using bis(tertbutylimido)-bis(dimethylamido) molybdenum. J Vac Sci Technol A 32:01A119CrossRef
30.
Zurück zum Zitat Rhyee JS, Kwon J, Dak P et al (2016) High-mobility transistors based on large-area and highly crystalline CVD-grown MoSe2 films on insulating substrates. Adv Mater 28:2316–2321CrossRef Rhyee JS, Kwon J, Dak P et al (2016) High-mobility transistors based on large-area and highly crystalline CVD-grown MoSe2 films on insulating substrates. Adv Mater 28:2316–2321CrossRef
31.
Zurück zum Zitat O’Brien M, McEvoy N, Hanlon D, Hallam T, Coleman JN, Duesberg GS (2016) Mapping of low-frequency raman modes in CVD-grown transition metal dichalcogenides: layer number, stacking orientation and resonant effects. Sci Rep 6:19476CrossRef O’Brien M, McEvoy N, Hanlon D, Hallam T, Coleman JN, Duesberg GS (2016) Mapping of low-frequency raman modes in CVD-grown transition metal dichalcogenides: layer number, stacking orientation and resonant effects. Sci Rep 6:19476CrossRef
32.
Zurück zum Zitat O’Brien M, McEvoy N, Hanlon D, Lee K, Gatensby R, Coleman JN, Duesberg GS (2015) Low wavenumber raman spectroscopy of highly crystalline MoSe2 grown by chemical vapor deposition. Phys Status Solidi B 252:2385–2389CrossRef O’Brien M, McEvoy N, Hanlon D, Lee K, Gatensby R, Coleman JN, Duesberg GS (2015) Low wavenumber raman spectroscopy of highly crystalline MoSe2 grown by chemical vapor deposition. Phys Status Solidi B 252:2385–2389CrossRef
33.
Zurück zum Zitat Mao J, Yu Y, Wang L, Zhang X, Wang Y, Shao Z, Jie J (2016) Ultrafast, broadband photodetector based on MoSe2/silicon heterojunction with vertically standing layered structure using graphene as transparent electrode. Adv Sci 3:1600018CrossRef Mao J, Yu Y, Wang L, Zhang X, Wang Y, Shao Z, Jie J (2016) Ultrafast, broadband photodetector based on MoSe2/silicon heterojunction with vertically standing layered structure using graphene as transparent electrode. Adv Sci 3:1600018CrossRef
34.
Zurück zum Zitat Yin L, Xu K, Wen Y et al (2016) Ultrafast and ultrasensitive phototransistors based on few-layered HfSe2. Appl Phys Lett 109:213105CrossRef Yin L, Xu K, Wen Y et al (2016) Ultrafast and ultrasensitive phototransistors based on few-layered HfSe2. Appl Phys Lett 109:213105CrossRef
35.
Zurück zum Zitat Zheng W, Feng W, Zhang Xin et al (2016) Anisotropic growth of nonlayered CdS on MoS2 monolayer for functional vertical heterostructures. Adv Funct Mater 26:2648–2654CrossRef Zheng W, Feng W, Zhang Xin et al (2016) Anisotropic growth of nonlayered CdS on MoS2 monolayer for functional vertical heterostructures. Adv Funct Mater 26:2648–2654CrossRef
36.
Zurück zum Zitat Liu G, Li Z, Chen X et al (2017) Non-planar vertical photodetectors based on free-standing two-dimensional SnS2 nanosheets. Nanoscale 9:9167–9174CrossRef Liu G, Li Z, Chen X et al (2017) Non-planar vertical photodetectors based on free-standing two-dimensional SnS2 nanosheets. Nanoscale 9:9167–9174CrossRef
37.
Zurück zum Zitat Lopez-Sanchez O, Lembke D, Kayci M, Radenovic A, Kis A (2013) Ultrasensitive photodetectors based on monolayer MoS2. Nat Nanotechnol 8:497–501CrossRef Lopez-Sanchez O, Lembke D, Kayci M, Radenovic A, Kis A (2013) Ultrasensitive photodetectors based on monolayer MoS2. Nat Nanotechnol 8:497–501CrossRef
38.
Zurück zum Zitat Mueller T, Xia F, Avouris P (2010) Graphene photodetectors for high-speed optical communications. Nat Photonics 4:297–301CrossRef Mueller T, Xia F, Avouris P (2010) Graphene photodetectors for high-speed optical communications. Nat Photonics 4:297–301CrossRef
39.
Zurück zum Zitat Buscema M, Island JO, Groenendijk DJ, Blanter SI, Steele GA, van der Zant HSJ, Castellanos-Gomez A (2015) Photocurrent generation with two-dimensional van der Waals semiconductors. Chem Soc Rev 44:3691–3718CrossRef Buscema M, Island JO, Groenendijk DJ, Blanter SI, Steele GA, van der Zant HSJ, Castellanos-Gomez A (2015) Photocurrent generation with two-dimensional van der Waals semiconductors. Chem Soc Rev 44:3691–3718CrossRef
40.
Zurück zum Zitat Octon TJ, Nagareddy VK, Russo S, Craciun MF, Wright CD (2016) Fast high-responsivity few-layer MoTe2 photodetectors. Adv Opt Mater 4:1750–1754CrossRef Octon TJ, Nagareddy VK, Russo S, Craciun MF, Wright CD (2016) Fast high-responsivity few-layer MoTe2 photodetectors. Adv Opt Mater 4:1750–1754CrossRef
Metadaten
Titel
Layer-controlled synthesis of wafer-scale MoSe2 nanosheets for photodetector arrays
verfasst von
Tian-Jun Dai
Xu-Dong Fan
Yi-Xuan Ren
Shuang Hou
Yi-Yu Zhang
Ling-Xuan Qian
Yan-Rong Li
Xing-Zhao Liu
Publikationsdatum
01.03.2018
Verlag
Springer US
Erschienen in
Journal of Materials Science / Ausgabe 11/2018
Print ISSN: 0022-2461
Elektronische ISSN: 1573-4803
DOI
https://doi.org/10.1007/s10853-018-2142-6

Weitere Artikel der Ausgabe 11/2018

Journal of Materials Science 11/2018 Zur Ausgabe

    Marktübersichten

    Die im Laufe eines Jahres in der „adhäsion“ veröffentlichten Marktübersichten helfen Anwendern verschiedenster Branchen, sich einen gezielten Überblick über Lieferantenangebote zu verschaffen.