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Journal of Materials Science

Erschienen in:

16.10.2018 | Electronic materials

Chemical pressure in the correlated narrow-gap semiconductor FeGa₃

verfasst von: Valeriy Yu. Verchenko, Alexander O. Zubtsovskii, Alexander A. Tsirlin, Andrei V. Shevelkov

Erschienen in: Journal of Materials Science | Ausgabe 3/2019

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Abstract

In the correlated narrow-gap semiconductor FeGa₃, 1.25 Ga atoms per formula unit can be replaced by Al atoms providing chemical pressure of ~ 1.2 GPa. The resulting FeGa_3−yAl_y solid solution (0 ≤ y ≤ 1.25) crystallizes in the parent structure type with Al atoms preferentially occupying one of the two crystallographic positions of Ga. As revealed by electrical resistivity and heat capacity measurements, FeGa_3−yAl_y exhibits nonmetallic properties for y = 0.937(9) similar to the parent compound FeGa₃ demonstrating that the electronic structure is not significantly altered by the chemical pressure. This result is corroborated by the electronic structure calculations, which show that the band gap is only slightly reduced in FeGa_3−yAl_y for y = 1.

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Titel: Chemical pressure in the correlated narrow-gap semiconductor FeGa3
verfasst von: Valeriy Yu. Verchenko
Alexander O. Zubtsovskii
Alexander A. Tsirlin
Andrei V. Shevelkov
Publikationsdatum: 16.10.2018
Verlag: Springer US
Erschienen in: Journal of Materials Science / Ausgabe 3/2019
Print ISSN: 0022-2461
Elektronische ISSN: 1573-4803
DOI: https://doi.org/10.1007/s10853-018-3012-y

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