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Imaging with Secondary and Backscattered Electrons

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Scanning Electron Microscopy

Part of the book series: Springer Series in Optical Sciences ((SSOS,volume 45))

Abstract

The most important topographic contrast mode with secondary electrons is caused by the dependence of the SE yield on the local tilt of the specimen surface. A fraction of the SE signal is excited by the primary electron probe and carries high-resolution information due to the small exit depth of the SE. Another fraction of poorer resolution is excited by the BSE. If, instead of using the conventional SE detector, the SE are sorted according to their exit momenta, a more quantitative interpretation of the topography may be possible. The SE are also affected by local magnetic and electrostatic fields, which create type-1 magnetic and voltage contrast, respectively. By employing pre-acceleration and a spectrometer the voltage contrast can be used to make a quantitative measurement of the surface bias.

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  1. Physikalisches Institut, Westfätlische Wilhelms-Univeraität Münster, Domagkstraße 75, D-4400, Münster, Fed. Rep. of Germany

    Professor Dr. Ludwig Reimer

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Reimer, L. (1985). Imaging with Secondary and Backscattered Electrons. In: Scanning Electron Microscopy. Springer Series in Optical Sciences, vol 45. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-13562-4_6

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  • DOI: https://doi.org/10.1007/978-3-662-13562-4_6

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