Abstract
High temperature plastic bending was used to introduce, into indium antimonide single crystals, an excess of dislocations having either In-atoms at the edge of their extra half-planes (“In-dislocations”), or having Sb-atoms there (“Sb-dislocations”). The densities of these two kinds of dislocations were estimated by etch pit techniques. Hall coefficient and electrical conductivity measurements, made on bent samples, indicated that both In- and Sb-dislocations act as acceptor centres in n-type material, and that In-dislocations act as acceptor centres in p-type material. The results are discussed in relation to the theories of Read [22] and Broudy [4].
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
P. Haasen and A. Seeger, Halbleiterprobleme (Braunschweig: Vieweg) 4 (1958) 68.
W. Bardsley, Progr. in Semiconductors 4 (1959) 157.
Van Bueren, “Imperfections in Crystals” (North Holland Publishing Co, 1960).
R. M. Broudy, Advances in Physics 12 (1963) 135.
P. Haasen, Acta. Met. 5 (1957) 598.
D. B. Holt, J. Phys. Chem. Solids 23 (1962) 1353.
H. C. Gatos and M. C. Lavine, J. Electrochem. Soc. 107 (1960) 427.
J. J. Duga, J. Appl. Phys. 33 (1962) 169.
H. C. Gatos, M. C. Finn and M. C. Lavine, J. Appl. Phys. 32 (1961) 1174.
R. K. Mueller and R. L. Jacobsen, J. Appl. Phys. 33 (1962) 2341.
J. Czochralski, Z. Phys. Chem. 92 (1917) 219.
R. L. Bell and W. Bonfield, Phil. Mag. 9 (1964) 9.
J. R. Patel, J. Appl. Phys. 29 (1958) 170.
E. P. Warekois, Lincoln Lab. Quarterly Progress Report (15 July 1959) 45.
H. C. Gatos and M. C. Lavine, J. Appl. Phys. 31 (1960) 743.
J. D. Venables and R. M. Broudy, J. Appl. Phys. 29 (1958) 1025.
A. F. W. Willoughby, Ph.D. Thesis (London) (1965).
J. D. Livingston, “Direct Observations of Imperfections in Crystals” (Interscience, 1962), p 115.
W. G. Johnston and J. J. Gilman, J. Appl. Phys. 31 (1960) 632.
D. Dew-Hughes, IBM J. Res. Dev. 5 (1961) 279.
H. Alexander and P. Haasen, Acta Met. 9 (1961) 1001.
W. T. Read, Phil. Mag. 45 (1954) 775; ibid 45 (1954) 1119; ibid 46 (1955) 111.
R. A. Logan, G. L. Pearson and D. A. Kleinman, J. Appl. Phys. 30 (1959) 885.
H. J. Juretschke, R. Landauer and J. A. Swanson, J. Appl. Phys. 27 (1956) 838.
A. H. Wilson, “The Theory of Metals” (Cambridge University Press, 1958).
L. Bliek, Dipl. Thesis (Göttingen) (1964).
H. Brooks, Adv. in Electronics and Electron Physics 7 (1955) 156.
W. Shockley, Phys. Rev. 91 (1953) 228.
A. H. Cottrell and M. A. Jaswon, Proc. Roy. Soc. A199 (1949) 104.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Bell, R.L., Latkowski, R. & Willoughby, A.F.W. The effect of plastic bending on the electrical properties of indium antimonide. J Mater Sci 1, 66–78 (1966). https://doi.org/10.1007/BF00549721
Received:
Issue Date:
DOI: https://doi.org/10.1007/BF00549721