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Investigation of the oxidation of hot- pressed Si3N4 with infra- red reflection spectroscopy (IRRS)

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Abstract

Infra-red reflection spectroscopy (IRRS) is used to investigate the oxidation of hot pressed silicon nitride. The hot pressing additives, MgO and ZrO2, are shown to have different effects on oxidation behaviour. Correlations between the area under an IRRS spectrum and the fracture strength of an oxidized specimen are demonstrated. Conclusions are drawn regarding the types of flaws generated during oxidation.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, University of Florida, 32611, Gainesville, Florida, USA

    L. L. Hench

  2. National Bureau of Standards, 20234, Washington DC, USA

    S. W. Freiman

Authors
  1. L. L. Hench
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  2. S. W. Freiman
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Hench, L.L., Freiman, S.W. Investigation of the oxidation of hot- pressed Si3N4 with infra- red reflection spectroscopy (IRRS). J Mater Sci 16, 2767–2773 (1981). https://doi.org/10.1007/BF02402840

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  • DOI: https://doi.org/10.1007/BF02402840

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