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Structural and photoluminescence characteristics of ZnO films by room temperature sputtering and rapid thermal annealing process

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Abstract

ZnO thin films deposited on SiO2/Si substrates at room temperature by sputtering technology were annealed with a rapid thermal annealing process at various temperatures from 200 °C to 900 °C. The physical and optical properties of the ZnO films were investigated by X-ray diffraction, scanning electron microscopy and room-temperature photoluminescence (PL). The surface structures of the thin films showed great variations with increased annealing temperature. The PL spectrum illustrated that a stronger UV emission intensity appeared at an annealing temperature of 500 °C. On the other hand, visible-light emission could be obtained when the ZnO films were annealed above 500 °C and reached a maximum intensity at 900 °C. The possible mechanisms for visible-light emission are discussed.

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Authors and Affiliations

  1. Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan, P.R. China

    P.-T. Hsieh, Y.-C. Chen & C.-C. Hu

  2. Department of Electrical Engineering, Cheng Shiu University, Kaohsiung, Taiwan, P.R. China

    C.-M. Wang

  3. Department of Electronic Engineering, Cheng Shiu University, Kaohsiung, Taiwan, P.R. China

    Y.-Z. Tsai

Authors
  1. P.-T. Hsieh
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  2. Y.-C. Chen
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  3. C.-M. Wang
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  4. Y.-Z. Tsai
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  5. C.-C. Hu
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Corresponding author

Correspondence to Y.-C. Chen.

Additional information

PACS

81.15.Cd; 81.40.Ef; 78.55.-m; 78.55.Et

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Hsieh, PT., Chen, YC., Wang, CM. et al. Structural and photoluminescence characteristics of ZnO films by room temperature sputtering and rapid thermal annealing process. Appl. Phys. A 84, 345–349 (2006). https://doi.org/10.1007/s00339-006-3620-2

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  • DOI: https://doi.org/10.1007/s00339-006-3620-2

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