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A perspective of recent progress in ZnO diluted magnetic semiconductors

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Abstract

ZnO has long been considered as a promising candidate material for diluted magnetic semiconductors, owing to its theoretically predicted and experimentally observed above-room-temperature ferromagnetism and long spin-coherence time. In this brief perspective, recent progress in ZnO diluted magnetic semiconductors is reviewed with particular focus on three topics: (1) spin coherence in ZnO; (2) free-carrier type and concentration-dependent magnetic properties in ZnO; and (3) ferromagnetism in undoped and non-transition-metal-doped ZnO. Finally, current status and possible potential direction of research on ZnO diluted magnetic semiconductors are summarized in the concluding remarks.

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Acknowledgements

Financial support from the University of Illinois at Chicago is acknowledged. The author would like to thank Prof. Qingyu Xu (Southeast Univ., China) and Prof. Di Wu (Nanjing Univ., China) for reading the first draft of the manuscript prepared for this review article and Prof. Xu’s comments.

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    Zheng Yang

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Yang, Z. A perspective of recent progress in ZnO diluted magnetic semiconductors. Appl. Phys. A 112, 241–254 (2013). https://doi.org/10.1007/s00339-013-7658-7

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