Abstract
We report the influences of Mn doping on the dielectric relaxation properties of multiferroic BiFeO3 ceramics. The dielectric permittivity of the BiFeO3 ceramic is suppressed by doping with Mn ions, which are suitably associated with the increase of the resistance and conduction activation energy of the bulk ceramic. Three sets of dielectric relaxations observed in the BiFeO3 ceramic are concealed to a single set of dielectric relaxation in the BiFe0.95Mn0.05O3 ceramic. The dielectric relaxation behavior of these ceramics might be ascribed based on the charge carriers hopping and/or the present of oxygen vacancies inside the grains.
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Acknowledgements
The authors would like to thank the Department of Physics, Ubon Ratchathani University for providing the XRD facilities and the Thai Microelectronics Center (TMEC) for FE-SEM facilities. This work is financially supported by The Synchrotron Light Research Institute (Public Organization), Thailand.
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Hunpratub, S., Thongbai, P., Yamwong, T. et al. Effects of Mn Doping on the Dielectric Relaxations and Dielectric Response in Multiferroic BiFeO3 Ceramics. J Supercond Nov Magn 25, 1619–1622 (2012). https://doi.org/10.1007/s10948-012-1490-8
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DOI: https://doi.org/10.1007/s10948-012-1490-8