Abstract
A small-signal radio-frequency (RF) parameters extraction model along with analog/RF and linearity distortion performance analysis are realized for virtually doped (VD) recessed source/drain dopingless junctionless transistor (Re S/D DLJLT) via 3-D device simulations. A simple and accurate RF non-quasi-static (NQS) model is developed to directly extract the extrinsic and intrinsic parasitic components through Y-parameters in OFF and ON-state respectively. Furthermore, direct comparison of DC, analog/RF, linearity figure of merits (FOMs), and Y-parameter extractions are made with recessed source/drain junction transistor (Re S/D JT) with identical threshold voltage (Vth) and device dimensions at GHz frequency range. Virtual doping, due to charge-plasma (CP) concept, provides N+ source/drain (S/D) regions by choosing a most convenient metal work function (WF = 3.9 eV; Hafnium) at S/D. Re S/D provides reduced series resistance without an increase in gate-drain Miller capacitance leading to improved drive current. In addition, the present device uses an intrinsic channel and does not require to be doped at S/D resulting in dopingless junctionless transistor (DLJLT). For both devices, gate length (L) is taken as 30 nm, which separated into control gate (L1) and screen gate (L2) and 3-D simulations are carried out by varying control to screen gate length ratios (CSLR) to obtain optimum results. Obtained results disclose that Re S/D DLJLT provides considerably improved performances in terms of DC, analog/RF, linearity, transient, and small-signal admittance parameters over Re S/D JT due to improved drive current and reduced short channel effects (SCEs). Accordingly, for high-performance RF applications, Re S/D DLJLT may be preferred over Re S/D JT due to significantly enhanced cut-off frequency (up to 0.399 THz) and maximum oscillation frequency (up to 1.226 THz).
Similar content being viewed by others
References
Dixit A, Kottantharayil A, Collaert N, Goodwin M, Jurczak M, DeMeyer K, DeMeyer K (2005) Analysis of the parasitic S/D resistance in multiple-gate FETs. IEEE Transactions on Electron Devices 52(6):1132–1140. https://doi.org/10.1109/TED.2005.848098
Kranti A, Alastair Armstrong G (2007) Source/drain extension region engineering in FinFETs for low-voltage analog applications. IEEE Electron Device Letters 28(2):139–141. https://doi.org/10.1109/LED.2006.889239
Hisamoto D (2001) FD/DG-SOI MOSFET-a viable approach to overcoming the device scaling limit. International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224). IEEE. https://doi.org/10.1109/IEDM.2001.979528
Pfiester JR, Sivan RD, Liaw HM, Seelbach CA, Gunderson CD (1990) A self-aligned elevated source/drain MOSFET. IEEE electron device letters 11(9):365–367. https://doi.org/10.1109/55.62957
Zhang Z, Zhang S, Chan M (2004) Self-align recessed source drain ultrathin body SOI MOSFET. IEEE Electron Device Letters 25(11):740–742. https://doi.org/10.1109/LED.2004.837582
Ke, Wei, et al. "Recessed source/drain for sub-50 nm UTB SOI MOSFET." Semiconductor science and technology 22.5 (2007): 577. https://doi.org/10.1088/0268-1242/22/5/021
Saramekala GK, Dubey S, Tiwari PK (2014) Analog and radio-frequency (RF) performance evaluation of fully-depleted (FD) recessed-source/drain (re-S/D) SOI MOSFETs. Superlattice Microst 76:77–89. https://doi.org/10.1016/j.spmi.2014.10.005
Lee C-W, Borne A, Ferain I, Afzalian A, Yan R, Dehdashti Akhavan N, Razavi P, Colinge J-P (2010) High-temperature performance of silicon junctionless MOSFETs. IEEE transactions on electron devices 57(3):620–625. https://doi.org/10.1109/TED.2009.2039093
Colinge J-P et al (2010) Nanowire transistors without junctions. Nat Nanotechnol 5(3):225–229. https://doi.org/10.1038/nnano.2010.15
Colinge, Jean-Pierre, et al. (2010) Reduced electric field in junctionless transistors. Applied Physics Letters 96.7: 073510. https://doi.org/10.1063/1.3299014
Lee, Chi-Woo, et al. (2010) Low subthreshold slope in junctionless multigate transistors. Applied Physics Letters 96.10: 102106. https://doi.org/10.1063/1.3358131
Leung G, Chui CO (2012) Variability impact of random dopant fluctuation on nanoscale junctionless FinFETs. IEEE Electron Device Letters 33(6):767–769. https://doi.org/10.1109/LED.2012.2191931
Hueting RJE, Rajasekharan B, Salm C, Schmitz J (2008) The charge plasma PN diode. IEEE electron device letters 29(12):1367–1369. https://doi.org/10.1109/LED.2008.2006864
Rajasekharan B, Hueting RJE, Salm C, van Hemert T, Wolters RAM, Schmitz J (2010) Fabrication and characterization of the charge-plasma diode. IEEE electron device letters 31(6):528–530. https://doi.org/10.1109/LED.2010.2045731
Ghosh P, Haldar S, Gupta RS, Gupta M (2012) An investigation of linearity performance and intermodulation distortion of GME CGT MOSFET for RFIC design. IEEE transactions on electron devices 59(12):3263–3268. https://doi.org/10.1109/TED.2012.2219537
Chaujar R, Kaur R, Saxena M, Gupta M, Gupta RS (2008) Intermodulation distortion and linearity performance assessment of 50-nm gate length L-DUMGAC MOSFET for RFIC design. Superlattice Microst 44(2):143–152. https://doi.org/10.1016/j.spmi.2008.04.007
Gautam R, Saxena M, Gupta RS, Gupta M (2012) Effect of localised charges on nanoscale cylindrical surrounding gate MOSFET: analog performance and linearity analysis. Microelectron Reliab 52(6):989–994. https://doi.org/10.1016/j.microrel.2011.12.014
Kang S, Choi B, Kim B (2003) Linearity analysis of CMOS for RF application. IEEE transactions on microwave theory and techniques 51(3):972–977. https://doi.org/10.1109/TMTT.2003.808709
Ma W, Kaya S (2004) Impact of device physics on DG and SOI MOSFET linearity. Solid State Electron 48(10–11):1741–1746. https://doi.org/10.1016/j.sse.2004.05.008
Kaya S, Ma W (2004) Optimization of RF linearity in DG-MOSFETs. IEEE Electron Device Letters 25(5):308–310. https://doi.org/10.1109/LED.2004.826539
Sahay S, Kumar MJ (2016) A novel gate-stack-engineered nanowire FET for scaling to the sub-10-nm regime. IEEE Transactions on Electron Devices 63(12):5055–5059. https://doi.org/10.1109/TED.2016.2617383
Sahu C, Singh J (2014) Charge-plasma based process variation immune junctionless transistor. IEEE Electron device letters 35(3):411–413. https://doi.org/10.1109/LED.2013.2297451
Shan C, Wang Y, Bao M-T (2016) A charge-plasma-based transistor with induced graded channel for enhanced analog performance. IEEE Transactions on electron devices 63(6):2275–2281. https://doi.org/10.1109/TED.2016.2549554
Sahay, Shubham, and Mamidala Jagadesh Kumar (2019) Junctionless field-effect transistors: design, modeling, and simulation. John Wiley & Sons
Verma, Prateek Kishor, and Santosh Kumar Gupta. (2020) Proposal of charge plasma based recessed source/drain dopingless junctionless transistor and its linearity distortion analysis for circuit applications." Silicon: 1–28. https://doi.org/10.1007/s12633-020-00402-8
Verma, Prateek Kishor, Akash Singh Rawat, and Santosh Kumar Gupta. "Temperature-Dependent Analog, RF, and Linearity Analysis of Junctionless Quadruple Gate MOSFETs for Analog Applications." Advances in VLSI, Communication, and Signal Processing. Springer, Singapore, 2020. 355–366. https://doi.org/10.1007/978-981-32-9775-3_32
Cho S, Kim KR, Park B-G, Kang IM (2011) RF performance and small-signal parameter extraction of junctionless silicon nanowire MOSFETs. IEEE Transactions on Electron Devices 58(5):1388–1396. https://doi.org/10.1109/TED.2011.2109724
Lee J-S, Cho S-J, Park B-G, Harris JSJ, Kang I-M (2012) Small-signal modeling of gate-all-around (GAA) Junctionless (JL) MOSFETs for sub-millimeter wave applications. JSTS: Journal of Semiconductor Technology and Science 12(2):230–239. https://doi.org/10.5573/JSTS.2012.12.2.230
Kang M, Kang IM, Jung YH, Shin H (2007) Separate extraction of gate resistance components in RF MOSFETs. IEEE transactions on electron devices 54(6):1459–1463. https://doi.org/10.1109/TED.2007.896361
Silvaco, Atlas User’s Manual. Silvaco, Inc. 567–1000 (2016)
Acknowledgments
The authors would like to express sincere gratitude to the VLSI laboratory of Electronics and Communication Engineering Department, MNNIT-Allahabad, for providing the resources to use SILVACO TCAD.
Author information
Authors and Affiliations
Corresponding author
Additional information
Publisher’s Note
Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
Rights and permissions
About this article
Cite this article
Verma, P.K., Gupta, S.K. An Improved Analog/RF and Linearity Performances with Small-Signal Parameter Extraction of Virtually Doped Recessed Source/Drain Dopingless Junctionless Transistor for Radio-Frequency Applications. Silicon 13, 1519–1539 (2021). https://doi.org/10.1007/s12633-020-00518-x
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s12633-020-00518-x