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Bulk Parameters Effect and Comparative Performance Analysis of p-Si/n-CdS/ALD-ZnO Solar Cell

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Abstract

The primary concern of the Si-based solar cells heterostructure devices is the dopant-free selectively contacting carriers with p-type Si wafers. The obvious potential of a highly straightforward fabrication technique and the decreased energy consumption is primarily what has attracted such significant attention. In the present investigations, computational simulation via SCAPS-1D has been executed on p-Si/n-CdS/ALD-ZnO heterojunction solar cells and attained the champion conversion efficiency of∼19.97% with the help of some considerably amended device parameters. With the proper optimization of the device, we have obtained better photovoltaic parameters by varying the thickness of the p-Si, n-CdS, and atomic layer deposited ALD-ZnO, noted the effect of series and shunt resistance, effect of temperature and incident radiation on the p-Si/n-CdS/ALD-ZnO device. The final proposed photovoltaic parameters have the %PCE = 19.97%, %FF = 83.37%, Jsc = 37.71 mA/cm2, and Voc = 635.3 mV. Finally, the collected performance metrics are compared to the findings from comparable experimental setups. After reaching these findings in the experimental laboratory and meeting the demand for renewable energy globally, it is assumed that such a device may be a turning point for future photovoltaic applications.

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Acknowledgements

The authors wish to acknowledge Dr. Marc Burgelman, University of Gent, Belgium, for the SCAPS-1D simulation software.

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Authors and Affiliations

  1. University Department of Physics, Lalit Narayan Mithila University, Darbhanga, 846004, Bihar, India

    Atish Kumar Sharma, Rakesh Kumar & Prakash Kumar Jha

  2. Post-Graduate Department of Physics, Samastipur College (A Constituent College of L.N.M.U.- Darbhanga-846004, Bihar, India), Samastipur, 848134, Bihar, India

    Atish Kumar Sharma, Rakesh Kumar, Prakash Kumar Jha & Ritesh Kumar Chourasia

  3. Experimental Research Laboratory, Department of Physics, ARSD College, University of Delhi, New Delhi, 110021, India

    Manish Kumar

  4. School of Physical Sciences, Jawaharlal Nehru University, New Delhi, 110067, India

    Nitesh K. Chourasia

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Contributions

Atish Kumar Sharma: Writing - Original Draft, Software, Validation; Rakesh Kumar: Software, Formal Analysis, Prakash Kumar Jha: Formal Analysis, Manish Kumar: Review & Editing, Formal Analysis; Nitesh K. Chourasia: Writing Original draft, Review & Editing, Formal analysis; Ritesh Kumar Chourasia: Conceptualization, Methodology, Investigation, Software, Validation, Supervision, Data Curation, Writing - Original Draft, Formal analysis.

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Correspondence to Nitesh K. Chourasia or Ritesh Kumar Chourasia.

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Sharma, A.K., Kumar, R., Jha, P.K. et al. Bulk Parameters Effect and Comparative Performance Analysis of p-Si/n-CdS/ALD-ZnO Solar Cell. Silicon 15, 6497–6508 (2023). https://doi.org/10.1007/s12633-023-02518-z

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