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Effects of chirped barrier thickness on InGaN/GaN and InGaN/InGaN MQW LEDs

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Abstract

In this paper, we present the effect of chirped barrier on the optical properties of InGaN/GaN and InGaN/InGaN multi quantum wells (MQWs) based light-emitting diodes. It is observed that the chirped barrier configuration of InGaN/GaN and InGaN/InGaN MQWs leads to enhanced performance in terms of reduced leakage current, IQE droop, polarization charges at interfaces, increased Hole injection, better carrier distribution, increased carrier wave function overlap, etc. The InGaN/InGaN chirped barrier configuration has shown the best results among all the four LED structures considered in this study. The IQE droop is reduced from 14 to 1% in InGaN/InGaN chirped MQWs as compared to the conventional InGaN/GaN MQWs. The carrier wave function overlap has improved from 19 to 41%. The Electron potential height has also enlarged from 394 to 530 meV, while the Hole potential height has condensed from 220 to 100 meV at 200 A cm−2. The Electron leakage current flux has reduced from 176 to 6 A cm−2 while the Hole injection flux has increased from 825 to 1000 A cm−2 at 1000 A cm−2 current density.

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Acknowledgments

The authors would like to acknowledge CSIR, New Delhi for supporting and sponsoring the project (HCP 0034). Authors are grateful to the Director, CSIR-CEERI for his support in this work. Authors are also thankful to members of Semiconductor Device Fabrication Group for their cooperation.

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Authors and Affiliations

  1. Semiconductor Device Fabrication Group, CSIR-Central Electronics Engineering Research Institute, Pilani, Rajasthan, 333031, India

    Indrani Mazumder, Kashish Sapra, Avinash Paliwal, Ashok Chauhan, Manish Mathew & Kuldip Singh

  2. Academy of Scientific and Innovative Research (AcSIR), Ghaziabad, Uttar Pradesh, 201002, India

    Indrani Mazumder, Kashish Sapra, Avinash Paliwal, Manish Mathew & Kuldip Singh

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  1. Indrani Mazumder
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  2. Kashish Sapra
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  4. Ashok Chauhan
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Correspondence to Kuldip Singh.

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Mazumder, I., Sapra, K., Paliwal, A. et al. Effects of chirped barrier thickness on InGaN/GaN and InGaN/InGaN MQW LEDs. Indian J Phys 97, 3653–3660 (2023). https://doi.org/10.1007/s12648-023-02677-0

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  • DOI: https://doi.org/10.1007/s12648-023-02677-0

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