Abstract
In the present article SiO2/Si layers of thickness 200 nm were implanted with 150 keV Ge ions with different fluences varying from 2.5 × 1016 to 7.5 × 1016 ions/cm2. The implantation-induced disorder was removed via high temperature annealing method in Ar ambience. Transmission electron microscopy (TEM) measurement confirmed the presence of embedded Ge nanocrystals of 5–10 nm size in annealed samples. Topographical studies of implanted as well as annealed samples were captured by the atomic force microscopy (AFM) and parameters such as average roughness and interface width were extracted. Two dimensional multifractal detrended fluctuation analysis (2D-MFDFA) based on the partition function approach was used to study the surfaces of ion implanted and annealed samples. The partition function is used to calculate generalized Hurst exponent with the segment size. A nonlinear variation with moment is observed for generalized Hurst exponents, leading to the multifractal nature. The multifractality of surface is pronounced after annealing for the surface implanted with fluence of 7.5 × 1016 ions/cm2.
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Acknowledgements
RPY is thankful to Science and Engineering Research Board (SERB) of India for awarding National Postdoctoral Fellowship (PDF/2015/000590). VB is thankful to DST for providing funds under young scientist scheme (SR/FTP/PS-53/2011) and Nanomission scheme (IR/S2/PF/0001/2009).
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This study was funded by Department of Science and Technology, New Delhi (grant number PDF/2015/000590, SR/FTP/PS-53/2011, IR/S2/PF/0001/2009).
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Author R P Yadav has received research grants from SERB, DST (PDF/2015/000590). Author V Baranwal has received research grants from DST (SR/FTP/PS-53/2011). Author Avinash C Pandey has received research grants from Nanomission, DST (IR/S2/PF/0001/2009), Author RPY declares that he has no conflict of interest. Author VB declares that he has no conflict of interest. Author SK declares that he has no conflict of interest. Author ACP declares that he has no conflict of interest. Author AKM declares that he has no conflict of interest.
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Yadav, R.P., Baranwal, V., Kumar, S. et al. Multifractal analysis of SiO2 surface embedded with Ge nanocrystal. Appl Nanosci 13, 247–253 (2023). https://doi.org/10.1007/s13204-020-01626-1
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DOI: https://doi.org/10.1007/s13204-020-01626-1