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Effect of precursors on Cu2S counter electrode on the quantum dot sensitized solar cell performance

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Abstract

Counter electrode of Cu2S on fluorine-doped tin oxide glass, which was synthesized by chemical bath deposition method in a nitrogen-purged environment with varying precursors and temperatures, is used for quantum dot sensitized solar cell fabrication. The morphology, composition and crystalline structure of the Cu2S film were characterized by scanning electron microscopy, energy dispersive X-ray and X-ray diffraction analysis. Electrochemical properties of the Cu2S film were measured by cyclic voltammetry measurement and the highest performance of JSC = 18.2 mA/cm2, VOC = 0.57 V, FF = 0.38 and η = 3.94% were recorded in the cell fabricated by the mixture of CuSO4 and Na2S2O3 precursors (1.0/1.0 ratio). It is the result of the enhancement of electrocatalytic activity, charge transfer and collection, and excited electron lifetime.

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Acknowledgements

This research is supported by project B2020.SPD.03.

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Authors and Affiliations

  1. APCLab, University of Science, Vietnam National University in Ho Chi Minh City, 227 Nguyen Van Cu street, District 5, Ho Chi Minh City, Vietnam

    Ho Nhat Phuong & Tran Van Man

  2. Faculty of Physics, Dong Thap University, 783 Pham Huu Lau street, Ward 6, Cao Lãnh City, Dong Thap Province, Vietnam

    Ha Thanh Tung

  3. Department of Mechanical and Material Engineering, Lee Kong Chian Faculty of Engineering and Science, Universiti Tunku Abdul Rahman, Sungai Long Campus, Jalan Sungai Long, Bandar Sungai Long, 43000, Kajang, Malaysia

    H. K. Jun

  4. Faculty of Chemistry, Dong Thap University, 783 Pham Huu Lau street, Ward 6, Cao Lãnh City, Dong Thap Province, Vietnam

    Bui Van Thang

  5. Vietnam National University in Ho Chi Minh City, Linh Trung Ward, Thu Duc District, Ho Chi Minh City, Vietnam

    Lam Quang Vinh

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  1. Ho Nhat Phuong
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Phuong, H.N., Van Man, T., Tung, H.T. et al. Effect of precursors on Cu2S counter electrode on the quantum dot sensitized solar cell performance. J. Korean Phys. Soc. 80, 1133–1142 (2022). https://doi.org/10.1007/s40042-022-00460-8

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  • DOI: https://doi.org/10.1007/s40042-022-00460-8

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