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High-Speed III-V Semiconductor Devices

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Semiconductor Physical Electronics

Abstract

In this chapter the basic device physics, operational principles, and general characteristics of high-speed III-V compound semiconductor devices such as MESFETs and HEMTs are presented. The devices described here include GaAs- and InPbased metal–semiconductor field-effect transistors (MESFETs) and high electron mobility transistors (HEMTs). The GaAs-based high-speed devices are fabricated using the lattice-matched GaAs/AlGaAs material system grown on a semiinsulating GaAs substrate, while the InP-based devices utilize the lattice-matched InAlAs/InGaAs or InGaAs/InP material systems grown on a semi-insulating InP substrate. Although the GaAs/AlGaAs material technology is more mature than that of the InP/InGaAs material system, the InP-based devices can be operated at a much higher frequency and higher speed than those of the GaAs-based devices. This is due to the fact that the InGaAs/InP material system has a higher electron mobility and smaller electron effective mass than those of the AlGaAs/GaAs material system.

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  1. Department of Electrical and Computer Engineering, University of Florida, Gainesville, FL, 32611–6130, USA

    Sheng S. Li

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  1. Department of Electrical and Computer Engineering, University of Florida, Gainesville, FL, 32611–6130, USA

    Sheng S. Li

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Li, S.S. (2006). High-Speed III-V Semiconductor Devices. In: Li, S.S. (eds) Semiconductor Physical Electronics. Springer, New York, NY. https://doi.org/10.1007/0-387-37766-2_16

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