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Terahertz Radiation from Semiconductor Surfaces

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Terahertz Optoelectronics

Part of the book series: Topics in Applied Physics ((TAP,volume 97))

Abstract

In this chapter, terahertz radiation from semiconductor surfaces by excitation of femtosecond laser pulses is discussed with special attention, paid to the influence of lattice vibrations and plasma oscillations in semiconductors. The effect of dielectric dispersion near the optical-phonon resonance, the coupling of the THz electrical transient with longitudinal optical phonons and semiconductor plasmons is considered.

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Authors and Affiliations

  1. National Institute of Information and Communications Technology, 558-2 Iwaoka, Nishi-ku, 651-2492, Kobe, Hyogo, Japan

    Ping Gu & Masahiko Tani

  2. Faculty of Education, Wakayama University, 930 Sakaedani, Wakayama-shi, 640-8510, Wakayama, Japan

    Ping Gu

  3. Institute of Laser Engineering, Osaka University, 2-6 Yamadaoka, Suita, 565-0871, Osaka, Japan

    Masahiko Tani

Authors
  1. Ping Gu
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  2. Masahiko Tani
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Kiyomi Sakai

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Gu, P., Tani, M. Terahertz Radiation from Semiconductor Surfaces. In: Sakai, K. (eds) Terahertz Optoelectronics. Topics in Applied Physics, vol 97. Springer, Berlin, Heidelberg. https://doi.org/10.1007/10828028_3

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