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Physics of Submicron Devices

  • Book
  • © 1991
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Overview

Authors:
  1. David K. Ferry

    1. College of Engineering and Applied Science Center for Solid State Electronics Research, Arizona State University, Tempe, USA

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  2. Robert O. Grondin

    1. College of Engineering and Applied Science Center for Solid State Electronics Research, Arizona State University, Tempe, USA

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    You can also search for this author in PubMed   Google Scholar

Part of the book series: Microdevices (MDPF)

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Table of contents (10 chapters)

  1. Front Matter

    Pages i-xiii
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  2. An Introductory Review

    • David K. Ferry, Robert O. Grondin
    Pages 1-49
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  3. Fabrication Techniques for Submicron Devices

    • David K. Ferry, Robert O. Grondin
    Pages 51-89
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  4. Heterojunctions and Interfaces

    • David K. Ferry, Robert O. Grondin
    Pages 91-136
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  5. Semiclassical Carrier Transport Models

    • David K. Ferry, Robert O. Grondin
    Pages 137-171
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  6. Transient Hot-Carrier Transport

    • David K. Ferry, Robert O. Grondin
    Pages 173-241
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  7. Alloys and Superlattices

    • David K. Ferry, Robert O. Grondin
    Pages 243-277
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  8. The Electron-Electron Interaction

    • David K. Ferry, Robert O. Grondin
    Pages 279-296
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  9. Lateral Surface Superlattices

    • David K. Ferry, Robert O. Grondin
    Pages 297-313
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  10. Quantum Transport in Small Structures

    • David K. Ferry, Robert O. Grondin
    Pages 315-362
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  11. Noise in Submicron Devices

    • David K. Ferry, Robert O. Grondin
    Pages 363-396
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  12. Back Matter

    Pages 397-402
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Keywords

About this book

The purposes of this book are many. First, we must point out that it is not a device book, as a proper treatment of the range of important devices would require a much larger volume even without treating the important physics for submicron devices. Rather, the book is written principally to pull together and present in a single place, and in a (hopefully) uniform treatment, much of the understanding on relevant physics for submicron devices. Indeed, the understand­ ing that we are trying to convey through this work has existed in the literature for quite some time, but has not been brought to the full attention of those whose business is the making of submicron devices. It should be remarked that much of the important physics that is discussed here may not be found readily in devices at the 1.0-JLm level, but will be found to be dominant at the O.I-JLm level. The range between these two is rapidly being covered as technology moves from the 256K RAM to the 16M RAM chips.

Authors and Affiliations

  • College of Engineering and Applied Science Center for Solid State Electronics Research, Arizona State University, Tempe, USA

    David K. Ferry, Robert O. Grondin

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