Abstract
The ability to grow high quality epitaxial layers of group III–V and group IV semiconductors in a state of permanent strain has two important implications for electronic and optoelectronic devices. First, it relaxes the constraints imposed by the requirement of lattice-matching. Thus, for example, by an appropriate choice of well width and composition InxGal-xAs/GaAs quantum well lasers can be made to operate at a convenient wavelength for the selective pumping of erbium doped fibre lasers and amplifiers. Also InxGal-xAs on GaAs can provide a high mobility channel for n-type FETs or the base for n-p-n bipolar transistors, improving their emitter injection efficiency. Finally, if such devices can be grown on silicon substrates, further considerable advantages would arise for the integration of optoelectronic circuits. For these applications strain is a problem that must be overcome in order to obtain the desired effects.
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© 1991 Plenum Press, New York
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Adams, A.R., Allam, J., Czajkowski, I.K., Ghiti, A., O’Reilly, E.P., Ring, W.S. (1991). Strained Layer Lasers and Avalanche Photodetectors. In: Beeby, J.L., Bhattacharya, P.K., Gravelle, P.C., Koch, F., Lockwood, D.J. (eds) Condensed Systems of Low Dimensionality. NATO ASI Series, vol 253. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-1348-9_47
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