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Erschienen in:
Level-Shifter-Less Approach for Multi-VDD SoC Design to Employ Body Bias Control in FD-SOI Kapitel lesen Erstes Kapitel lesen

2019 | OriginalPaper | Buchkapitel

Evaluating the Impact of Resistive Defects on FinFET-Based SRAMs

verfasst von : Thiago S. Copetti, Guilherme C. Medeiros, Letícia M. B. Poehls, Tiago R. Balen

Erschienen in: VLSI-SoC: Opportunities and Challenges Beyond the Internet of Things

Verlag: Springer International Publishing

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Abstract

The development of FinFET technology has made possible the continuous scaling-down of CMOS technological nodes. In parallel, the increasing need to store more information has resulted in the fact that Static Random Access Memories (SRAMs) occupy great part of Systems-on-Chip (SoCs). The manufacturing process variation has introduced several types of defects that directly affect the SRAM’s reliability, causing different faults. Thus, it remains unknown if the fault models used in CMOS memory circuits are sufficiently accurate to represent the faulty behavior of FinFET-based memories. In this context, a study of manufacturing’s functional implications regarding resistive defects in FinFET-based SRAMs is presented. In more detail, a complete analysis of static and dynamic fault behavior for FinFET-based SRAMs is described. The proposed analysis has been performed through SPICE simulations, adopting a compact Predictive Technology Model (PTM) of FinFET transistors, considering different technological nodes. Faults have been categorized as single or coupling, static or dynamic.

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Vorheriges Kapitel Level-Shifter-Less Approach for Multi-VDD SoC Design to Employ Body Bias Control in FD-SOI
Nächstes Kapitel Lifetime Enhancement of Non-Volatile Caches by Exploiting Dynamic Associativity Management Techniques
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Metadaten
Titel
Evaluating the Impact of Resistive Defects on FinFET-Based SRAMs
verfasst von
Thiago S. Copetti
Guilherme C. Medeiros
Letícia M. B. Poehls
Tiago R. Balen
Copyright-Jahr
2019
Buch
VLSI-SoC: Opportunities and Challenges Beyond the Internet of Things

Print ISBN: 978-3-030-15662-6

Electronic ISBN: 978-3-030-15663-3

Copyright-Jahr: 2019

DOI
https://doi.org/10.1007/978-3-030-15663-3_2