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Gate Dielectrics and MOS ULSIs

Principles, Technologies and Applications

  • Book
  • © 1997

Overview

Authors:
  1. Takashi Hori

    1. Kyoto Research Laboratory, Matsushita Electronics, Inc., Minami-ku,Kyoto, Japan

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  • The reader will obtain updated information for not only deep-submicron ULSIs having nanometer-range ultrathin gate- dielectrics but also nitrided oxides from this first book presenting them in detail so as to reach the present high state of the art.

Part of the book series: Springer Series in Electronics and Photonics (SSEP, volume 34)

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Table of contents (6 chapters)

  1. Front Matter

    Pages I-XIV
    Download chapter PDF

  2. Introduction

    • Takashi Hori
    Pages 1-22

  3. MIS Structure

    • Takashi Hori
    Pages 23-74

  4. MOS Fielid-Effect Transistor

    • Takashi Hori
    Pages 75-147

  5. Thermally Grown Silicon Oxide

    • Takashi Hori
    Pages 149-207

  6. Thermally Nitrided Oxides: for Flash Memories

    • Takashi Hori
    Pages 209-295

  7. Films with High Dielectric Constants: for Passive Capacitance

    • Takashi Hori
    Pages 297-324

  8. Back Matter

    Pages 325-353
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Keywords

About this book

Gate Dielectrics and MOS ULSIs provides necessary and sufficient information for those who wish to know well and go beyond the conventional SiO2 gate dielectric. The topics particularly focus on dielectric films satisfying the superior quality needed for gate dielectrics even in large-scale integration. And since the quality requirements are rather different between device applications, they are selected in an applicatipn-oriented manner, e.g., conventional SiO2 used in CMOS logic circuits, nitrided oxides, which recently became indispensable for flash memories, and composite ONO and ferroelectric films for passive capacitors used in DRAM applications. The book also covers issues common to all gate dielectrics, such as MOSFET physics, evaluation, scaling, and device application/integration for successful development. The information is as up to date as possible, especially for nanometer-range ultrathin gate-dielectric films indispensible in submicrometer ULSIs. The text together with abundant illustrations will take even the inexperienced reader up to the present high state of the art. It is the first book presenting nitrided gate oxides in detail.

Authors and Affiliations

  • Kyoto Research Laboratory, Matsushita Electronics, Inc., Minami-ku,Kyoto, Japan

    Takashi Hori

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