Perspectives of Silicon-on-Insulator Technologies for Cryogenic Electronics

The first experimental data on the use of silicon at low temperatures are nearly 5 decades old and were merely intended to support the physical models under development [1]. About a decade ago, the idea emerged that cryogenic electronics could be considered as the technology of the future. However, economical considerations and difficulties at the system level such as cooling units and packaging, have then reduced the world-wide interest. More recently, due to the advent of nanotechnologies, multiple-level-wiring interconnections, hybrid superconductor-semiconductor systems, the rapid evolution of mini- and micro-coolers, and the appearance of physical limitations for further downscaling, the research activities in the field of cryogenic electronics is showing a revival [2]. An updated review of the different aspects of low temperature electronics is under preparation [3].