Abstract
Thin films produced by PE-CVD techniques are often used in microelectronic and MEMS applications. New kind of discharges, glow discharges so called Atmospheric Pressure Glow (APG) can be otained when a dielectric barrier is used. The process of discharges stabilized by a dielectric barrier having non-uniform character (similar to the “silent” discharges) was used to produce thin films of silicon oxide and silicon nitride applicable in MEMS technology. The substrate temperature (silicon or metal) was usually 150-250°C. Such film deposited using polycondensation of tetraethoxysilane (TEOS) and hexamethylodisilazane (HMDS) for silicon oxide and silicon nitride respectively were tested using a special microtribometer for wear studies and Hysitron Inc.Triboscope TM which has the capability to carry out indentations at very low loads and to make load-displacement measurements with subnanometer indentation depth sensitivity. The wear and nanomechanical behaviors of the films were found to be very sensitive to the thickness (films up to 300 nm thick have been investigated) and the material composition.
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Rymuza, Z., Kusznierewicz, Z., Misiak, M., Schmidt-Szałowski, K., Rżanek-Boroch, Z., Sentek, J. (1998). Wear and Nanomechanical Studies of Silicon Oxide and Silicon Nitride Thin Films for MEMS Applications. In: Bhushan, B. (eds) Tribology Issues and Opportunities in MEMS. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-5050-7_43
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DOI: https://doi.org/10.1007/978-94-011-5050-7_43
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